专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07666554B2 Method and apparatus for performing model-based layout conversion for use with dipole illumination 有权
标题翻译：用于与偶极照明一起使用的基于模型的布局转换的方法和装置
公开(公告)号：US07666554B2
公开(公告)日：2010-02-23
申请号：US11588326
申请日：2006-10-27
申请人： Duan-Fu Stephen Hsu , Kurt E. Wampler , Markus Franciscus Antonius Eurlings , Jang Fung Chen , Noel Corcoran
发明人： Duan-Fu Stephen Hsu , Kurt E. Wampler , Markus Franciscus Antonius Eurlings , Jang Fung Chen , Noel Corcoran
IPC分类号： G03F1/00
CPC分类号： G03F7/705 , G03F1/36 , G03F1/70 , G03F7/70125 , G03F7/70441 , G03F7/70466
摘要： A method of generating complementary masks for use in a multiple-exposure lithographic imaging process. The method includes the steps of: identifying a target pattern having a plurality of features comprising horizontal and vertical edges; generating a horizontal mask based on the target pattern; generating a vertical mask based on the target pattern; performing a shielding step in which at least one of the vertical edges of the plurality of features in the target pattern is replaced by a shield in the horizontal mask, and in which at least one of the horizontal edges of the plurality of features in the target pattern is replaced by a shield in the vertical mask, where the shields have a width which is greater that the width of the corresponding feature in the target pattern; performing an assist feature placement step in which sub-resolution assist features are disposed parallel to at least one of the horizontal edges of the plurality of features in the horizontal mask, and are disposed parallel to at least one of the vertical edges of the plurality of features in the vertical mask, and performing a feature biasing step in which at least one of the horizontal edges of the plurality of features in the horizontal mask are adjusted such that the resulting feature accurately reproduces the target pattern, and at least one of the vertical edges of the plurality of features in the vertical mask are adjusted such that the resulting feature accurately reproduces the target pattern.
摘要翻译：一种产生用于多次曝光光刻成像过程的互补掩模的方法。该方法包括以下步骤：识别具有包括水平和垂直边缘的多个特征的目标图案; 基于目标图案生成水平掩模; 基于目标图案生成垂直掩模; 执行屏蔽步骤，其中目标图案中的多个特征的至少一个垂直边缘被水平掩模中的屏蔽替换，并且其中目标中的多个特征中的至少一个水平边缘图案由垂直掩模中的屏蔽代替，其中屏蔽具有大于目标图案中相应特征的宽度的宽度; 执行辅助特征放置步骤，其中副分辨率辅助特征平行于水平掩模中的多个特征中的至少一个水平边缘设置，并且平行于多个垂直边缘中的至少一个垂直边缘特征，并且执行特征偏置步骤，其中水平掩模中的多个特征的水平边缘中的至少一个被调整，使得所得到的特征精确地再现目标图案，并且垂直屏蔽中的至少一个垂直调整垂直掩模中的多个特征的边缘，使得所得到的特征精确地再现目标图案。

2. 发明授权

US07985515B2 Method and apparatus for performing model-based layout conversion for use with dipole illumination 有权
标题翻译：用于与偶极照明一起使用的基于模型的布局转换的方法和装置
公开(公告)号：US07985515B2
公开(公告)日：2011-07-26
申请号：US12630280
申请日：2009-12-03
申请人： Duan-Fu Stephen Hsu , Kurt E. Wampler , Markus Franciscus Antonius Eurlings , Jang Fung Chen , Noel Corcoran
发明人： Duan-Fu Stephen Hsu , Kurt E. Wampler , Markus Franciscus Antonius Eurlings , Jang Fung Chen , Noel Corcoran
IPC分类号： G03F1/00
CPC分类号： G03F7/705 , G03F1/36 , G03F1/70 , G03F7/70125 , G03F7/70441 , G03F7/70466
摘要： A method of generating complementary masks for use in a multiple-exposure lithographic imaging process. The method includes the steps of: identifying a target pattern having a plurality of features comprising horizontal and vertical edges; generating a horizontal mask based on the target pattern; generating a vertical mask based on the target pattern; performing a shielding step in which at least one of the vertical edges of the plurality of features in the target pattern is replaced by a shield in the horizontal mask, and in which at least one of the horizontal edges of the plurality of features in the target pattern is replaced by a shield in the vertical mask, where the shields have a width which is greater that the width of the corresponding feature in the target pattern; performing an assist feature placement step in which sub-resolution assist features are disposed parallel to at least one of the horizontal edges of the plurality of features in the horizontal mask, and are disposed parallel to at least one of the vertical edges of the plurality of features in the vertical mask, and performing a feature biasing step in which at least one of the horizontal edges of the plurality of features in the horizontal mask are adjusted such that the resulting feature accurately reproduces the target pattern, and at least one of the vertical edges of the plurality of features in the vertical mask are adjusted such that the resulting feature accurately reproduces the target pattern.
摘要翻译：一种产生用于多次曝光光刻成像过程的互补掩模的方法。该方法包括以下步骤：识别具有包括水平和垂直边缘的多个特征的目标图案; 基于目标图案生成水平掩模; 基于目标图案生成垂直掩模; 执行屏蔽步骤，其中目标图案中的多个特征的至少一个垂直边缘被水平掩模中的屏蔽替换，并且其中目标中的多个特征中的至少一个水平边缘图案由垂直掩模中的屏蔽代替，其中屏蔽具有大于目标图案中相应特征的宽度的宽度; 执行辅助特征放置步骤，其中副分辨率辅助特征平行于水平掩模中的多个特征中的至少一个水平边缘设置，并且平行于多个垂直边缘中的至少一个垂直边缘特征，并且执行特征偏置步骤，其中水平掩模中的多个特征的水平边缘中的至少一个被调整，使得所得到的特征精确地再现目标图案，并且垂直屏蔽中的至少一个垂直调整垂直掩模中的多个特征的边缘，使得所得到的特征精确地再现目标图案。

3. 发明授权

US07138212B2 Method and apparatus for performing model-based layout conversion for use with dipole illumination 有权
标题翻译：用于与偶极照明一起使用的基于模型的布局转换的方法和装置
公开(公告)号：US07138212B2
公开(公告)日：2006-11-21
申请号：US10705231
申请日：2003-11-12
申请人： Duan-Fu Stephen Hsu , Kurt E. Wampler , Markus Franciscus Antonius Eurlings , Jang Fung Chen , Noel Corcoran
发明人： Duan-Fu Stephen Hsu , Kurt E. Wampler , Markus Franciscus Antonius Eurlings , Jang Fung Chen , Noel Corcoran
IPC分类号： G01F9/00
CPC分类号： G03F7/705 , G03F1/36 , G03F1/70 , G03F7/70125 , G03F7/70441 , G03F7/70466
摘要： A method of generating complementary masks for use in a multiple-exposure lithographic imaging process. The method includes the steps of: identifying a target pattern having a plurality of features comprising horizontal and vertical edges; generating a horizontal mask based on the target pattern; generating a vertical mask based on the target pattern; performing a shielding step in which at least one of the vertical edges of the plurality of features in the target pattern is replaced by a shield in the horizontal mask, and in which at least one of the horizontal edges of the plurality of features in the target pattern is replaced by a shield in the vertical mask, where the shields have a width which is greater that the width of the corresponding feature in the target pattern; performing an assist feature placement step in which sub-resolution assist features are disposed parallel to at least one of the horizontal edges of the plurality of features in the horizontal mask, and are disposed parallel to at least one of the vertical edges of the plurality of features in the vertical mask, and performing a feature biasing step in which at least one of the horizontal edges of the plurality of features in the horizontal mask are adjusted such that the resulting feature accurately reproduces the target pattern, and at least one of the vertical edges of the plurality of features in the vertical mask are adjusted such that the resulting feature accurately reproduces the target pattern.
摘要翻译：一种产生用于多次曝光光刻成像过程的互补掩模的方法。该方法包括以下步骤：识别具有包括水平和垂直边缘的多个特征的目标图案; 基于目标图案生成水平掩模; 基于目标图案生成垂直掩模; 执行屏蔽步骤，其中目标图案中的多个特征的至少一个垂直边缘被水平掩模中的屏蔽替换，并且其中目标中的多个特征中的至少一个水平边缘图案由垂直掩模中的屏蔽代替，其中屏蔽具有大于目标图案中相应特征的宽度的宽度; 执行辅助特征放置步骤，其中副分辨率辅助特征平行于水平掩模中的多个特征中的至少一个水平边缘设置，并且平行于多个垂直边缘中的至少一个垂直边缘特征，并且执行特征偏置步骤，其中水平掩模中的多个特征的水平边缘中的至少一个被调整，使得所得到的特征精确地再现目标图案，并且垂直屏蔽中的至少一个垂直调整垂直掩模中的多个特征的边缘，使得所得到的特征精确地再现目标图案。

4. 发明授权

US06875545B2 Method of removing assist features utilized to improve process latitude 有权
标题翻译：消除辅助功能的方法，以改善过程的纬度
公开(公告)号：US06875545B2
公开(公告)日：2005-04-05
申请号：US10305364
申请日：2002-11-27
申请人： Markus Franciscus Antonius Eurlings , Jang Fung Chen , Duan-Fu Stephen Hsu
发明人： Markus Franciscus Antonius Eurlings , Jang Fung Chen , Duan-Fu Stephen Hsu
IPC分类号： G03F1/00 , G03F7/20 , H01L21/027 , G02B31/00
CPC分类号： G03F7/70125 , G03F1/36 , G03F1/70 , G03F7/70441 , G03F7/70466
摘要： A method of transferring a lithographic pattern onto a substrate by use of a lithographic apparatus. The method includes the steps of: (1) defining features to be printed on the substrate; (2) determining which of the features require assist features to be disposed adjacent thereto in order for the features to be printed within defined resolution limits; (3) generating a mask containing the features to be printed and the assist features; (4) performing a first illumination process so as to print the features on the substrate, the first illumination process resulting in the partial printing of the assist features on the substrate; and (5) performing a second illumination process so as to reduce the amount of the assist features printed on the substrate; the second illumination process entails the step of performing a quadrapole illumination.
摘要翻译：通过使用光刻设备将光刻图案转印到基板上的方法。该方法包括以下步骤：（1）定义要印刷在基底上的特征; （2）确定哪些特征要求辅助特征与其邻近设置，以使特征被打印在限定的分辨率限度内; （3）产生包含要印刷的特征和辅助特征的掩模; （4）执行第一照明处理以便在所述基板上打印所述特征，所述第一照明处理导致所述辅助特征部分地印刷在所述基板上; 和（5）执行第二照明处理以减少印刷在基板上的辅助特征量; 第二照明处理需要执行四极照明的步骤。

5. 发明授权

US07617476B2 Method for performing pattern pitch-split decomposition utilizing anchoring features 失效
标题翻译：使用锚固特征进行图案间距分解分解的方法
公开(公告)号：US07617476B2
公开(公告)日：2009-11-10
申请号：US11898647
申请日：2007-09-13
申请人： Duan-Fu Stephen Hsu , Noel Corcoran , Jang Fung Chen , Douglas Van Den Broeke
发明人： Duan-Fu Stephen Hsu , Noel Corcoran , Jang Fung Chen , Douglas Van Den Broeke
IPC分类号： G06F17/50
CPC分类号： G03F7/70466 , G03F1/70 , G03F7/70433
摘要： A method for decomposing a target pattern containing features to be printed on a wafer into multiple patterns. The method includes the steps of: (a) determining a minimum critical dimension and pitch associated with a process to be utilized to image the multiple patterns; (b) generating an anchoring feature; (c) disposing the anchoring feature adjacent a first feature of the target pattern; (d) growing the anchoring feature a predetermined amount so as to define a first area; (e) assigning any feature within the first area to a first pattern; (f) disposing the anchoring feature adjacent a second feature of the target pattern; (g) growing the anchoring feature the predetermined amount so as to define a second area; and (h) assigning any feature within the second area to a second pattern. Steps (c)-(h) are then repeated until the densely spaced features within the target pattern have been assigned to either the first or second pattern.
摘要翻译：一种用于将包含要印刷在晶片上的特征的目标图案分解为多个图案的方法。该方法包括以下步骤：（a）确定与要用于对多个图案成像的过程相关联的最小临界尺寸和间距; （b）产生锚固特征; （c）将所述锚定特征设置在所述目标图案的第一特征附近; （d）使锚定特征增长预定量以限定第一区域; （e）将第一区域内的任何特征分配给第一模式; （f）将所述锚定特征设置在所述目标图案的第二特征附近; （g）使锚定特征增长预定量以限定第二区域; 和（h）将第二区域内的任何特征分配给第二模式。然后重复步骤（c） - （h），直到目标图案内密集间隔的特征被分配给第一或第二图案。

6. 发明授权

US07434195B2 Method for performing full-chip manufacturing reliability checking and correction 有权
标题翻译：执行全芯片制造可靠性检查和校正的方法
公开(公告)号：US07434195B2
公开(公告)日：2008-10-07
申请号：US11225888
申请日：2005-09-14
申请人： Michael Hsu , Thomas Laidig , Kurt E. Wampler , Duan-Fu Stephen Hsu , Xuelong Shi
发明人： Michael Hsu , Thomas Laidig , Kurt E. Wampler , Duan-Fu Stephen Hsu , Xuelong Shi
IPC分类号： G06F17/50 , G06K9/00 , G03F1/00
CPC分类号： G03F7/705 , G03F1/36 , G03F7/70433 , G03F7/70441
摘要： A method of generating a mask for use in an imaging process pattern. The method includes the steps of: (a) obtaining a desired target pattern having a plurality of features to be imaged on a substrate; (b) simulating a wafer image utilizing the target pattern and process parameters associated with a defined process; (c) defining at least one feature category; (d) identifying features in the target pattern that correspond to the at least one feature category, and recording an error value for each feature identified as corresponding to the at least one feature category; and (e) generating a statistical summary which indicates the error value for each feature identified as corresponding to the at least one feature category.
摘要翻译：一种生成用于成像处理模式的掩模的方法。该方法包括以下步骤：（a）获得具有要在基底上成像的多个特征的期望目标图案; （b）使用目标图案模拟晶片图像并处理与定义的工艺相关的参数; （c）定义至少一个要素类别; （d）识别与所述至少一个特征类别相对应的所述目标图案中的特征，以及记录与所述至少一个特征类别相对应的每个特征的错误值; 和（e）生成统计摘要，其指示被识别为对应于所述至少一个特征类别的每个特征的误差值。

7. 发明授权

US08910091B2 Method, program product and apparatus for performing double exposure lithography 有权
标题翻译：用于进行双曝光光刻的方法，程序产品和装置
公开(公告)号：US08910091B2
公开(公告)日：2014-12-09
申请号：US13401820
申请日：2012-02-21
申请人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke
发明人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke
IPC分类号： G06F17/50 , G03F7/20 , G03F1/00
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/70 , G03F7/70466 , G06F2217/08 , G06F2217/12
摘要： A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process is disclosed. The method includes defining an initial H-mask and an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask and vertical critical features in the V-mask; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask.
摘要翻译：公开了一种基于具有待成像在基板上的特征的目标图案产生互补掩模以在多次曝光光刻成像过程中使用的方法。该方法包括定义对应于目标图案的初始H掩模和初始V掩模; 识别V面罩中H面罩和垂直关键特征的水平关键特征; 将第一相移和第一百分比传输分配给要在H掩模中形成的水平临界特征; 以及将要在V掩模中形成的垂直关键特征分配第二相移和第二百分比传输。该方法还包括将铬分配给H掩模和V掩模中的所有非关键特征的步骤。

8. 发明申请

US20120122023A1 Method and Apparatus for Performing Model-Based OPC for Pattern Decomposed Features 失效
标题翻译：用于对模式分解特征执行基于模型的OPC的方法和装置
公开(公告)号：US20120122023A1
公开(公告)日：2012-05-17
申请号：US13358497
申请日：2012-01-25
申请人： Duan-Fu Stephen Hsu , Jung Chul Park , Douglas Van Den Broeke , Jang Fung Chen
发明人： Duan-Fu Stephen Hsu , Jung Chul Park , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G03F1/36 , G06F17/50
CPC分类号： G06T7/0004 , G03F1/36 , G03F1/70 , G03F7/70466 , G03F7/70475
摘要： A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.
摘要翻译：一种用于将包含要成像的特征的目标电路图案分解为多个图案的方法。该方法包括将待印刷的特征分离成第一图案和第二图案的步骤; 对所述第一图案和所述第二图案执行第一光学邻近校正处理; 确定所述第一图案和所述第二图案的成像性能; 确定所述第一图案和所述第一图案的成像性能之间的第一误差，以及所述第二图案和所述第二图案的成像性能之间的第二误差; 利用第一误差来调整第一图案以产生修改的第一图案; 利用第二误差来调整第二图案以产生修改的第二图案; 以及对修改的第一图案和修改的第二图案应用第二光学邻近校正处理。

9. 发明授权

US07681171B2 Method, program product and apparatus for performing double exposure lithography 有权
标题翻译：用于进行双曝光光刻的方法，程序产品和装置
公开(公告)号：US07681171B2
公开(公告)日：2010-03-16
申请号：US11402273
申请日：2006-04-12
申请人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke
发明人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/70 , G03F7/70466 , G06F2217/08 , G06F2217/12
摘要： A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process. The method includes the steps of: defining an initial H-mask corresponding to the target pattern; defining an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask having a width which is less than a predetermined critical width; identifying vertical critical features in the V-mask having a width which is less than a predetermined critical width; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask. The non-critical features are those features having a width which is greater than or equal to the predetermined critical width. The non-critical features are formed in the H-mask and the V-mask utilizing chrome. The target pattern is then imaged on the substrate by imaging both the H-mask and V-mask.
摘要翻译：基于具有要在多曝光光刻成像处理中使用的基板上成像的特征的目标图案产生互补掩模的方法。该方法包括以下步骤：定义对应于目标图案的初始H掩码; 定义对应于目标图案的初始V掩模; 识别具有小于预定临界宽度的宽度的H掩模中的水平临界特征; 识别具有小于预定临界宽度的宽度的V形掩模中的垂直关键特征; 将第一相移和第一百分比传输分配给要在H掩模中形成的水平临界特征; 以及将要在V掩模中形成的垂直关键特征分配第二相移和第二百分比传输。该方法还包括将铬分配给H掩模和V掩模中的所有非关键特征的步骤。非关键特征是具有大于或等于预定临界宽度的宽度的那些特征。非关键特征形成在H掩模和使用铬的V形掩模中。然后通过成像H掩模和V掩模来将目标图案成像在衬底上。

10. 发明申请

US20130055171A1 Method, Program Product and Apparatus for Performing Double Exposure Lithography 有权
标题翻译：用于进行双重曝光光刻的方法，程序产品和装置
公开(公告)号：US20130055171A1
公开(公告)日：2013-02-28
申请号：US13401820
申请日：2012-02-21
申请人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke
发明人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/70 , G03F7/70466 , G06F2217/08 , G06F2217/12
摘要： A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process is disclosed. The method includes defining an initial H-mask and an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask and vertical critical features in the V-mask; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask.
摘要翻译：公开了一种基于具有待成像在基板上的特征的目标图案产生互补掩模以在多次曝光光刻成像过程中使用的方法。该方法包括定义对应于目标图案的初始H掩模和初始V掩模; 识别V面罩中H面罩和垂直关键特征的水平关键特征; 将第一相移和第一百分比传输分配给要在H掩模中形成的水平临界特征; 以及将要在V掩模中形成的垂直关键特征分配第二相移和第二百分比传输。该方法还包括将铬分配给H掩模和V掩模中的所有非关键特征的步骤。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式