专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09384982B2 Depositing material into high aspect ratio structures 有权
标题翻译：将材料沉积成高纵横比结构
公开(公告)号：US09384982B2
公开(公告)日：2016-07-05
申请号：US14758043
申请日：2013-12-30
申请人： FEI Company
发明人： Sang Hoon Lee , Jeffrey Blackwood , Stacey Stone
IPC分类号： H01L21/76 , H01L21/31 , H01L21/469 , H01L21/26 , H01L21/02 , H01L21/285 , C23C16/04 , H01L21/768
CPC分类号： H01L21/2605 , C23C16/045 , C23C16/047 , H01L21/02115 , H01L21/02277 , H01L21/0243 , H01L21/0262 , H01L21/02636 , H01L21/28556 , H01L21/76879 , H01L21/76898
摘要： A method is provided, along with a corresponding apparatus, for filling a high aspect ratio hole without voids or for producing high aspect ratio structures without voids. A beam having a diameter smaller than the diameter of the hole is directed into the hole to induced deposition beginning in the center region of the hole bottom. After an elongated structure is formed in the hole by the beam-induced deposition, a beam can then be scanned in a pattern at least as large as the hole diameter to fill the remainder of the hole. The high aspect ratio hole can then be cross-sectioned using an ion beam for observation without creating artefacts. When electron-beam-induced deposition is used, the electrons preferably have a high energy to reach the bottom of the hole, and the beam has a low current, to reduce spurious deposition by beam tails.
摘要翻译：提供了一种方法，连同相应的装置，用于填充没有空隙的高纵横比孔或用于产生没有空隙的高纵横比结构。直径小于孔直径的梁被引导到孔中以在孔底的中心区域开始诱导沉积。在通过光束沉积在孔中形成细长结构之后，可以以至少与孔直径一样大的图案扫描光束，以填充孔的其余部分。然后可以使用离子束对高纵横比孔进行横截面观察而不产生伪影。当使用电子束感应沉积时，电子优选具有高能量以到达孔的底部，并且光束具有低电流，以减少光束尾部的杂散沉积。

2. 发明申请

US20150260784A1 Multidimensional Structural Access 审中-公开
标题翻译：多维结构访问
公开(公告)号：US20150260784A1
公开(公告)日：2015-09-17
申请号：US14432712
申请日：2013-10-04
申请人： FEI COMPANY
发明人： Jeffrey Blackwood , Sang Hoon Lee , Michael Schmidt , Stacey Stone , Karey Holland
IPC分类号： G01R31/265 , H01J37/153
CPC分类号： G01R31/2653 , G01N1/286 , G01N1/32 , G01R31/2808 , G01R31/2898 , G01R31/307 , G01R31/312 , H01J37/153 , H01J37/3005 , H01J2237/208 , H01J2237/24564 , H01J2237/2817 , H01J2237/31749 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： Multiple planes within the sample are exposed from a single perspective for contact by an electrical probe. The sample can be milled at a non-orthogonal angle to expose different layers as sloped surfaces. The sloped edges of multiple, parallel conductor planes provide access to the multiple levels from above. The planes can be accessed, for example, for contacting with an electrical probe for applying or sensing a voltage. The level of an exposed layer to be contacted can be identified, for example, by counting down the exposed layers from the sample surface, since the non-orthogonal mill makes all layers visible from above. Alternatively, the sample can be milled orthogonally to the surface, and then tilted and/or rotated to provide access to multiple levels of the device. The milling is preferably performed away from the region of interest, to provide electrical access to the region while minimizing damage to the region.
摘要翻译：样品中的多个平面从单个角度暴露出来，用于通过电探针进行接触。样品可以以非正交角度研磨，以将不同的层暴露于倾斜的表面。多个平行导体平面的倾斜边缘可从上方进入多个层次。例如，可以访问平面，以便与用于施加或感测电压的电探针接触。可以例如通过从样品表面倒下暴露的层来鉴定待接触的暴露层的水平，因为非正交磨机使得所有层从上方可见。或者，样品可以与表面正交地研磨，然后倾斜和/或旋转以提供对该装置的多个级别的访问。铣削优选地远离感兴趣的区域进行，以提供对该区域的电通路，同时使对该区域的损害最小化。

3. 发明授权

US09412560B2 Bulk deposition for tilted mill protection 有权
标题翻译：用于倾斜磨机保护的散装沉积
公开(公告)号：US09412560B2
公开(公告)日：2016-08-09
申请号：US14432730
申请日：2013-10-07
申请人： FEI Company
发明人： Stacey Stone , Sang Hoon Lee , Jeffrey Blackwood , Michael Schmidt
IPC分类号： H01J37/31 , G01N1/32 , H01J37/30 , G01N23/225 , H01J37/305
CPC分类号： H01J37/3005 , G01N1/32 , G01N23/2255 , G01N2223/104 , G01N2223/611 , H01J37/3007 , H01J37/3053 , H01J37/3056 , H01J37/31 , H01J2237/063 , H01J2237/08 , H01J2237/2813 , H01J2237/31732 , H01J2237/31745 , H01J2237/31749
摘要： To reduce artifacts in a surface exposed by a focused ion beam for viewing, a trench is milled next to the region of interest, and the trench is filled to create a bulkhead. The ion beam is directed through the bulkhead to expose a portion of the region of interest for viewing. The trench is filled, for example, by charged particle beam-induced deposition. The trench is typically milled and filled from the top down, and then the ion beam is angled with respect to the sample surface to expose the region of interest.
摘要翻译：为了减少由聚焦离子束暴露的表面中的人造物进行观察，在感兴趣区域旁边研磨沟槽，并且填充沟槽以形成隔板。离子束被引导通过隔板以暴露感兴趣区域的一部分以供观察。例如，通过带电粒子束诱导沉积来填充沟槽。沟槽通常从顶部向下铣削和填充，然后离子束相对于样品表面成角度以暴露感兴趣区域。

4. 发明申请

US20150357159A1 Fiducial Design for Tilted or Glancing Mill Operations with a Charged Particle Beam 审中-公开
标题翻译：带有带电粒子束的倾斜或碾磨机操作的基准设计
公开(公告)号：US20150357159A1
公开(公告)日：2015-12-10
申请号：US14758466
申请日：2013-12-30
申请人： FEI COMPANY
发明人： Stacey Stone , Sang Hoon Lee , Jeffrey Blackwood , Michael Schmidt , Hyun Hwa Kim
IPC分类号： H01J37/317
CPC分类号： H01J37/317 , H01J37/3056 , H01J2237/221 , H01J2237/226 , H01J2237/2814 , H01J2237/31745
摘要： A method for analyzing a sample with a charged particle beam including directing the beam toward the sample surface; milling the surface to expose a second surface in the sample in which the end of the second surface distal to ion source is milled to a greater depth relative to a reference depth than the end of the first surface proximal to ion source; directing the charged particle beam toward the second surface to form one or more images of the second surface; forming images of the cross sections of the multiple adjacent features of interest by detecting the interaction of the electron beam with the second surface; assembling the images of the cross section into a three-dimensional model of one or more of the features of interest. A method for forming an improved fiducial and determining the depth of an exposed feature in a nanoscale three-dimensional structure is presented.
摘要翻译：一种用于分析具有带电粒子束的样品的方法，包括将束朝向样品表面引导; 铣削表面以暴露样品中的第二表面，其中远离离子源的第二表面的端部相对于参考深度比距离离子源的第一表面的端部更深的深度; 将带电粒子束引向第二表面以形成第二表面的一个或多个图像; 通过检测电子束与第二表面的相互作用形成感兴趣的多个相邻特征的横截面的图像; 将横截面的图像组装成感兴趣的一个或多个特征的三维模型。提出了一种用于形成改进的基准并确定纳米尺度三维结构中暴露特征的深度的方法。

5. 发明申请

US20150243478A1 High Aspect Ratio Structure Analysis 审中-公开
标题翻译：高宽比结构分析
公开(公告)号：US20150243478A1
公开(公告)日：2015-08-27
申请号：US14433354
申请日：2013-10-04
申请人： FEI COMPANY
发明人： Sang Hoon Lee , Stacey Stone , Jeffrey Blackwood , Michael Schmidt
IPC分类号： H01J37/305 , C23C14/46
CPC分类号： H01J37/3053 , C23C14/46 , G01N1/32 , H01J37/28 , H01J37/3056 , H01J37/3178 , H01J2237/3174 , H01J2237/31745 , H01J2237/31749
摘要： Curtaining artifacts on high aspect ratio features are reduced by reducing the distance between a protective layer and feature of interest. For example, the ion beam can mill at an angle to the work piece surface to create a sloped surface. A protective layer is deposited onto the sloped surface, and the ion beam mills through the protective layer to expose the feature of interest for analysis. The sloped mill positions the protective layer close to the feature of interest to reduce curtaining.
摘要翻译：通过减小保护层和感兴趣的特征之间的距离来减少高纵横比特征上的赝像。例如，离子束可以与工件表面成一定角度磨，以产生倾斜的表面。保护层沉积在倾斜表面上，并且离子束通过保护层研磨以暴露感兴趣的特征以进行分析。倾斜的磨机使保护层位于感兴趣的特征附近以减少绘制。

6. 发明申请

US20140190934A1 METHOD FOR PREPARING SAMPLES FOR IMAGING 有权
公开(公告)号：US20140190934A1
公开(公告)日：2014-07-10
申请号：US14144902
申请日：2013-12-31
申请人： FEI Company
发明人： Michael Schmidt , Jeffrey Blackwood , Stacey Stone , Sang Hoon Lee , Ronald Kelley
IPC分类号： G01N1/32
CPC分类号： G01N1/32 , G01N1/286 , G01N2001/2886 , H01J37/3056 , H01J2237/31745
摘要： A method and apparatus is provided for preparing samples for observation in a charged particle beam system in a manner that reduces or prevents artifacts. Material is deposited onto the sample using charged particle beam deposition just before or during the final milling, which results in an artifact-free surface. Embodiments are useful for preparing cross sections for SEM observation of samples having layers of materials of different hardnesses. Embodiments are useful for preparation of thin TEM samples.

7. 发明授权

US11315756B2 Fiducial design for tilted or glancing mill operations with a charged particle beam 有权
公开(公告)号：US11315756B2
公开(公告)日：2022-04-26
申请号：US16012888
申请日：2018-06-20
申请人： FEI Company
发明人： Stacey Stone , Sang Hoon Lee , Jeffrey Blackwood , Michael Schmidt , Hyun Hwa Kim
IPC分类号： H01J37/317 , H01J37/305
摘要： A method for analyzing a sample with a charged particle beam including directing the beam toward the sample surface; milling the surface to expose a second surface in the sample in which the end of the second surface distal to ion source is milled to a greater depth relative to a reference depth than the end of the first surface proximal to ion source; directing the charged particle beam toward the second surface to form one or more images of the second surface; forming images of the cross sections of the multiple adjacent features of interest by detecting the interaction of the electron beam with the second surface; assembling the images of the cross section into a three-dimensional model of one or more of the features of interest. A method for forming an improved fiducial and determining the depth of an exposed feature in a nanoscale three-dimensional structure is presented.

8. 发明授权

US09741536B2 High aspect ratio structure analysis 有权
公开(公告)号：US09741536B2
公开(公告)日：2017-08-22
申请号：US14433354
申请日：2013-10-04
申请人： FEI Company
发明人： Sang Hoon Lee , Stacey Stone , Jeffrey Blackwood , Michael Schmidt
IPC分类号： G01R23/02 , H01J37/305 , H01J37/28 , H01J37/317 , C23C14/46 , G01N1/32
CPC分类号： H01J37/3053 , C23C14/46 , G01N1/32 , H01J37/28 , H01J37/3056 , H01J37/3178 , H01J2237/3174 , H01J2237/31745 , H01J2237/31749
摘要： Curtaining artifacts on high aspect ratio features are reduced by reducing the distance between a protective layer and feature of interest. For example, the ion beam can mill at an angle to the work piece surface to create a sloped surface. A protective layer is deposited onto the sloped surface, and the ion beam mills through the protective layer to expose the feature of interest for analysis. The sloped mill positions the protective layer close to the feature of interest to reduce curtaining.

9. 发明授权

US09488554B2 Method and system for reducing curtaining in charged particle beam sample preparation 有权
标题翻译：用于减少带电粒子束样品制备的方法和系统
公开(公告)号：US09488554B2
公开(公告)日：2016-11-08
申请号：US14432711
申请日：2013-10-07
申请人： FEI Company
发明人： Michael Schmidt , Hyun Hwa Kim , Sang Hoon Lee , Stacey Stone , Jeffrey Blackwood
IPC分类号： H01J37/00 , G01N1/32 , G01N1/28 , H01J37/20 , H01J37/305
CPC分类号： G01N1/32 , G01N1/286 , H01J37/20 , H01J37/3053 , H01J2237/31745
摘要： A method and system for exposing a portion of a structure in a sample for observation in a charged particle beam system, including extracting a sample from a bulk sample; determining an orientation of the sample that reduces curtaining; mounting the sample to a holder in the charged particle beam system so that the holder orients the sample in an orientation that reduces curtaining when the sample is milled to expose the structure; exposing the structure by milling the sample in a direction that reduces curtaining; and imaging the structure.
摘要翻译：一种方法和系统，用于暴露用于在带电粒子束系统中观察的样品中的结构的一部分，包括从大量样品中提取样品; 确定减少绘制的样品的取向; 将样品安装到带电粒子束系统中的保持器上，使得保持器以样品取向使得当样品被研磨以暴露结构时减少绘制的取向; 通过在减少绘制的方向上研磨样品来暴露结构; 并对结构进行成像。

10. 发明申请

US20150340235A1 DEPOSITING MATERIAL INTO HIGH ASPECT RATIO STRUCTURES 审中-公开
标题翻译：沉积材料进入高比例比例结构
公开(公告)号：US20150340235A1
公开(公告)日：2015-11-26
申请号：US14758043
申请日：2013-12-30
申请人： FEI COMPANY
发明人： Sang Hoon Lee , Jeffrey Blackwood , Stacey Stone
IPC分类号： H01L21/26 , H01L21/285 , H01L21/768 , H01L21/02
CPC分类号： H01L21/2605 , C23C16/045 , C23C16/047 , H01L21/02115 , H01L21/02277 , H01L21/0243 , H01L21/0262 , H01L21/02636 , H01L21/28556 , H01L21/76879 , H01L21/76898
摘要： A method is provided, along with a corresponding apparatus, for filling a high aspect ratio hole without voids or for producing high aspect ratio structures without voids. A beam having a diameter smaller than the diameter of the hole is directed into the hole to induced deposition beginning in the center region of the hole bottom. After an elongated structure is formed in the hole by the beam-induced deposition, a beam can then be scanned in a pattern at least as large as the hole diameter to fill the remainder of the hole. The high aspect ratio hole can then be cross-sectioned using an ion beam for observation without creating artefacts. When electron-beam-induced deposition is used, the electrons preferably have a high energy to reach the bottom of the hole, and the beam has a low current, to reduce spurious deposition by beam tails.
摘要翻译：提供了一种方法，连同相应的装置，用于填充没有空隙的高纵横比孔或用于产生没有空隙的高纵横比结构。直径小于孔直径的梁被引导到孔中以在孔底的中心区域开始诱导沉积。在通过光束沉积在孔中形成细长结构之后，可以以至少与孔直径一样大的图案扫描光束，以填充孔的其余部分。然后可以使用离子束对高纵横比孔进行横截面观察而不产生伪影。当使用电子束感应沉积时，电子优选具有高能量以到达孔的底部，并且光束具有低电流，以减少光束尾部的杂散沉积。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式