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    • 7. 发明申请
    • PROCESS FOR PRODUCING COPPER WIRING POLYIMIDE FILM, AND COPPER WIRING POLYIMIDE FILM
    • 生产铜线聚酰亚胺膜和铜线聚酰亚胺薄膜的方法
    • US20090136725A1
    • 2009-05-28
    • US12294421
    • 2007-03-23
    • Hiroto ShimokawaKeita Bamba
    • Hiroto ShimokawaKeita Bamba
    • H05K3/18H05K1/09H05K3/38B44C1/22B05D5/12B32B15/08
    • H05K3/108H05K1/0346H05K3/025H05K3/427H05K2201/0154H05K2203/0264H05K2203/0353Y10T156/11Y10T428/24917Y10T428/265
    • There is disclosed a copper wiring polyimide film having wiring with ultra fine pitch and excellent in the linearity. The copper wiring polyimide film is produced by a process for producing a copper wiring polyimide film having a 20 to 45 μm-pitch copper wiring part by a semi-additive method using a copper foil laminated polyimide film with carrier. The process comprises (a) a step of providing a copper foil laminated film comprising a copper foil having a film side surface roughness Rz of not more than 1.0 μm and a thickness in the range of 0.5 to 2 μm laminated on a surface of a polyimide film, (b) a step of forming a plating resist pattern layer in which a wiring pattern having 20 to 45 μm pitch can be formed on the upper surface of the copper foil, (c) a step of conducting copper plating on the copper foil part exposed from the resist, (d) a step of removing the plating resist, and (e) a step of removing the copper foil exposed on the plating resist-removed part to expose a polyimide film.
    • 公开了具有超细间距的布线并且线性优异的铜布线聚酰亚胺膜。 铜布线性聚酰亚胺膜是通过使用铜箔层叠聚酰亚胺膜与载体的半添加法制造具有20〜45μm间距铜配线部的铜布线聚酰亚胺膜的工序。 该方法包括(a)提供包含铜箔的铜箔层压膜的步骤,该铜箔层压膜层压在聚酰亚胺表面上的具有不大于1.0μm的膜侧表面粗糙度Rz和0.5-2μm的厚度的铜箔 薄膜,(b)形成电镀抗蚀剂图案层的步骤,其中可以在铜箔的上表面上形成具有20至45μm间距的布线图案,(c)在铜箔上进行镀铜的步骤 (d)去除电镀抗蚀剂的步骤,(e)除去暴露在电镀抗蚀剂去除部分上的铜箔以露出聚酰亚胺膜的步骤。