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    • 1. 发明授权
    • Configuring and testing treatment therapy parameters for a medical device system
    • 配置和测试医疗器械系统的治疗治疗参数
    • US08543214B2
    • 2013-09-24
    • US10687135
    • 2003-10-15
    • Ivan OsorioMark G. FreiNaresh C. BhavarajuThomas E. PetersRandy M. Jensen
    • Ivan OsorioMark G. FreiNaresh C. BhavarajuThomas E. PetersRandy M. Jensen
    • A61N1/00
    • A61N1/36132A61N1/08
    • Apparatus and method support the configuration and testing of therapy parameters for a medical device system in the treatment of nervous system disorders. With the embodiment, the medical device system operates in a manual treatment therapy mode, in which the medical device system evaluates a set of information that is indicative of a system configuration. The medical device system determines if the set of information is acceptable. During the manual treatment therapy mode, the medical device system applies therapeutic treatment to a patient in accordance with the set of information. If the patient cannot tolerate the therapeutic treatment, the user indicates so through a user interface. The medical device system may associate the patient's intolerance to therapeutic treatments that equal or exceed the patient's level of tolerance. Moreover, the medical device system may use this information to prevent a delivery of therapeutic treatment that exceeds the patient's level of tolerance during a run mode.
    • 装置和方法支持用于治疗神经系统疾病的医疗装置系统的治疗参数的配置和测试。 在该实施例中,医疗设备系统以手动治疗治疗模式操作,其中医疗设备系统评估指示系统配置的一组信息。 医疗设备系统确定该组信息是否可接受。 在手动治疗治疗模式期间,医疗装置系统根据该组信息向患者施加治疗。 如果患者不能耐受治疗,则用户通过用户界面来表示。 医疗装置系统可以将患者的不耐受性与等于或超过患者的耐受水平的治疗性治疗联系起来。 此外,医疗装置系统可以使用该信息来防止在运行模式期间超过患者的容忍度的治疗性治疗的递送。
    • 9. 发明授权
    • Process of preparing an electrical contact material
    • 制备电接触材料的方法
    • US4217139A
    • 1980-08-12
    • US970507
    • 1978-12-18
    • Han J. KimThomas E. PetersDavid Snee
    • Han J. KimThomas E. PetersDavid Snee
    • C22C1/10C22C32/00H01H1/0237B22F3/00
    • C22C1/1078C22C32/0021H01H1/02374
    • The instant invention relates to a method of preparing an electrical contact from sub-micron size silver and less than two micron size cadmium oxide particles with the contact having finally dispersed particles of cadmium oxide within grains of silver. In the instant invention the particles of silver and cadmium oxide are intimately blended together and subjected to a reducing atmosphere at a temperature of from 321.degree. C. to 550.degree. C. to reduce the cadmium oxide and form an alloy powder of cadmium and silver. The alloy formed is held at an elevated temperature following reducing and then oxidized at a temperature of from 321.degree. C. to 550.degree. C. to precipitate a dispersion of cadmium oxide within grains of silver and form a silver-cadmium oxide alloy powder. In an alternative embodiment an alloy powder of cadmium and silver already prepared from sub-micron size particles of silver and less than two micron size particles of cadmium oxide is heated to a temperature of from 321.degree. C. to 550.degree. C. in an inert atmosphere. The inert atmosphere is then changed to an oxidizing atmosphere at that temperature to precipitate the dispersion of cadmium oxide within the grains of silver. The material as prepared by both embodiments is then formed into an electrical contact.
    • 本发明涉及一种从亚微米尺寸的银和小于2微米尺寸的氧化镉颗粒制备电接触的方法,所述接触物最终在银颗粒内分散有氧化镉颗粒。 在本发明中,将银和氧化镉颗粒紧密地混合在一起并在321℃至550℃的温度下进行还原气氛,以还原氧化镉并形成镉和银的合金粉末。 形成的合金在还原后保持在升高的温度,然后在321℃至550℃的温度下氧化,以使氧化镉在银晶粒中的分散体沉淀并形成银 - 氧化镉合金粉末。 在替代实施例中,已经由亚微米尺寸的银颗粒和小于2微米尺寸的氧化镉颗粒制备的镉和银合金粉末在惰性气氛中加热到321℃至550℃的温度 大气层。 然后在该温度下将惰性气氛变为氧化气氛,以使氧化镉在银颗粒内的分散。 然后将由两个实施方案制备的材料形成为电接触。
    • 10. 发明授权
    • Method for improving a manganese activated zinc silicate phosphor
    • 锰活化硅酸锌荧光体的改良方法
    • US5039449A
    • 1991-08-13
    • US267880
    • 1988-11-07
    • Thomas E. PetersRoger B. HuntA. Gary Sigai
    • Thomas E. PetersRoger B. HuntA. Gary Sigai
    • C09K11/67
    • C09K11/676
    • A new and improved method of treating a manganese activated zinc silicate phosphor is described. The method comprises heating a manganese activated zinc silicate phosphor powder having cations consisting essentially of zinc, silicon, manganese, and tungsten and having a 350 nm reflectance less than 80% and a 275 nm reflectance greater than 13.5% to a temperature of about 1225.degree. C. in air. The phosphor powder is then cooled to room temperature and wet milled in an acid solution. The phosphor powder is then separated from the acid solution washed in water and dried to form a dry phosphor powder having a 350 nm reflectance equal to or greater than 80% and a 275 nm reflectance equal to or less than 13.5%.
    • 描述了一种新的改进的锰活化硅酸锌荧光体的处理方法。 该方法包括加热具有基本上由锌,硅,锰和钨组成的阳离子的锰活化的硅酸锌荧光体粉末,并且具有小于80%的350nm反射率和大于13.5%的275nm反射率至约1225℃的温度 C.在空气中 然后将荧光体粉末冷却至室温,并在酸溶液中湿磨。 然后将荧光体粉末与在水中洗涤的酸溶液分离并干燥,形成具有等于或大于80%的350nm反射率和275nm反射率等于或小于13.5%的干荧光粉。