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1. 发明授权

US08283804B2 Semiconductor IC device having power-sharing and method of power-sharing thereof 失效
标题翻译：具有功率共享的半导体IC器件及其功率共享方法
公开(公告)号：US08283804B2
公开(公告)日：2012-10-09
申请号：US12333194
申请日：2008-12-11
申请人： Hyung-Soo Kim , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
发明人： Hyung-Soo Kim , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
IPC分类号： H02J1/10 , H02J3/38 , H02J7/34
CPC分类号： G11C5/14 , Y10T307/352 , Y10T307/391 , Y10T307/50 , Y10T307/505 , Y10T307/549 , Y10T307/555 , Y10T307/56 , Y10T307/565 , Y10T307/571 , Y10T307/576 , Y10T307/582 , Y10T307/587 , Y10T307/593
摘要： A semiconductor IC device capable of power-sharing includes a first power line configured to be supplied with a first power, a second power line configured to be supplied with a second power, a switching block configured to connect the first power line with the second power line in response to a first control signal, and a power-sharing control block configured to generate the control signal in accordance with a plurality of operation command signals.
摘要翻译：能够进行功率共享的半导体IC器件包括被配置为被提供第一电力的第一电力线，被配置为被提供第二电力的第二电力线，被配置为将第一电力线与第二电力连接的开关块响应于第一控制信号的线路;以及功率共享控制块，被配置为根据多个操作命令信号产生控制信号。

2. 发明授权

US08278981B2 Low power variable delay circuit 有权
标题翻译：低功率可变延迟电路
公开(公告)号：US08278981B2
公开(公告)日：2012-10-02
申请号：US12636901
申请日：2009-12-14
申请人： Hae-Rang Choi , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
发明人： Hae-Rang Choi , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
IPC分类号： H03L7/00
CPC分类号： G11C19/28
摘要： A variable delay circuit includes at least a fixed delay unit, a first selection unit, and variable delay unit. The fixed delay unit receives an input signal and a first delay selection signal indicative of a first delay, and outputs a first delayed signal that is substantially the input signal delayed by the first delay. The first selection unit receives the input signal, the first delayed signal, and a second delay selection signal, and outputs either the input signal or the first delayed signal based on the second delay selection signal to the variable delay unit. The variable delay unit also receives a third delay selection signal indicative of a third delay, and outputs a output signal that is substantially the output signal of the selection unit delayed by a third delay. The first delay is 0 or X multiples of M delay units. The third delay is a delay selected from 0 to N delay units.
摘要翻译：可变延迟电路至少包括固定延迟单元，第一选择单元和可变延迟单元。固定延迟单元接收表示第一延迟的输入信号和第一延迟选择信号，并且输出基本上延迟了第一延迟的输入信号的第一延迟信号。第一选择单元接收输入信号，第一延迟信号和第二延迟选择信号，并且基于第二延迟选择信号将输入信号或第一延迟信号输出到可变延迟单元。可变延迟单元还接收表示第三延迟的第三延迟选择信号，并且输出基本上延迟了第三延迟的选择单元的输出信号的输出信号。第一个延迟是M个延迟单位的0或X倍。第三延迟是从0到N个延迟单元中选择的延迟。

3. 发明申请

US20100301912A1 DELAY LOCKED LOOP AND DELAY LOCKING METHOD HAVING BURST TRACKING SCHEME 有权
标题翻译：延迟锁定方式的延迟锁定和延迟锁定方法
公开(公告)号：US20100301912A1
公开(公告)日：2010-12-02
申请号：US12494509
申请日：2009-06-30
申请人： Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
发明人： Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
IPC分类号： H03L7/06
CPC分类号： H03L7/0814 , H03L7/093
摘要： A Delay Locked Loop (DLL) includes a replica delay unit configured to delay an output clock to generate a feedback clock; a phase detector configured to measure a phase difference between the feedback clock and an input clock; a quantization unit configured to quantize the phase difference measured by the phase detector; and a delay unit configured to delay the input clock based on a quantization result from the quantization unit to generate the output clock.
摘要翻译：延迟锁定环（DLL）包括复制延迟单元，其被配置为延迟输出时钟以产生反馈时钟; 相位检测器，被配置为测量反馈时钟和输入时钟之间的相位差; 量化单元，被配置为量化由相位检测器测量的相位差; 以及延迟单元，被配置为基于来自量化单元的量化结果来延迟输入时钟，以产生输出时钟。

4. 发明申请

US20100250994A1 DATA PATTERN DETECTING CIRCUIT AND OUTPUT DRIVER INCLUDING THE SAME 审中-公开
标题翻译：数据模式检测电路和输出驱动器，包括它们
公开(公告)号：US20100250994A1
公开(公告)日：2010-09-30
申请号：US12495332
申请日：2009-06-30
申请人： Chang-Kun Park , Yong-Ju Kim , Kyung-Whan Kim , Sung-Woo Han , Jae-Il Kim , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang
发明人： Chang-Kun Park , Yong-Ju Kim , Kyung-Whan Kim , Sung-Woo Han , Jae-Il Kim , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang
IPC分类号： G06F1/12
CPC分类号： G06F13/4077
摘要： Disclosed is an output driver capable of solving problems that occur when outputting the same data successively by using a data pattern detecting circuit. The data pattern detecting circuit includes a first data storage unit configured to receive data of a first line and store the received data until a next data is inputted through the first line, a second data storage unit configured to receive data of a second line and store the received data until a next data is inputted through the second line, and a detection signal output unit configured to activate a pattern detection signal when data stored in the first data storage unit and data stored in the second data storage unit have the same logic level.
摘要翻译：公开了一种能够解决通过使用数据模式检测电路连续输出相同数据时出现的问题的输出驱动器。数据模式检测电路包括：第一数据存储单元，被配置为接收第一行的数据并存储接收的数据，直到通过第一行输入下一个数据;第二数据存储单元，被配置为接收第二行的数据并存储所接收的数据直到通过第二行输入下一个数据;以及检测信号输出单元，被配置为当存储在第一数据存储单元中的数据和存储在第二数据存储单元中的数据具有相同的逻辑电平时激活模式检测信号。

5. 发明申请

US20090267579A1 VOLTAGE REGULATOR 失效
标题翻译：电压稳压器
公开(公告)号：US20090267579A1
公开(公告)日：2009-10-29
申请号：US12265908
申请日：2008-11-06
申请人： Hyung-Soo KIM , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
发明人： Hyung-Soo KIM , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
IPC分类号： G05F1/00
CPC分类号： G11C5/147
摘要： A voltage regulator with an adaptive bandwidth, including a first buffer chain, a voltage generating unit, a trimming capacitor unit, a second buffer chain, and a control unit. The first buffer chain delays a clock signal using an external voltage as a supply voltage. The voltage generating unit generates a regulated voltage on the basis a reference voltage. The trimming capacitor unit controls a load capacitance of the voltage generating unit. The second buffer chain delays the clock signal using the regulated voltage as a supply voltage. The control unit adjusts the load capacitance by detecting a delay difference of clocks output from the first and second buffer chains.
摘要翻译：具有自适应带宽的电压调节器，包括第一缓冲链，电压产生单元，微调电容器单元，第二缓冲链和控制单元。第一个缓冲链使用外部电压作为电源电压来延迟时钟信号。电压产生单元基于参考电压产生调节电压。微调电容器单元控制电压产生单元的负载电容。第二缓冲链使用调节电压作为电源电压来延迟时钟信号。控制单元通过检测从第一和第二缓冲器链输出的时钟的延迟差来调节负载电容。

6. 发明授权

US08144530B2 Semiconductor memory device and method for generating output enable signal 有权
标题翻译：半导体存储器件和产生输出使能信号的方法
公开(公告)号：US08144530B2
公开(公告)日：2012-03-27
申请号：US12494403
申请日：2009-06-30
申请人： Hyung-Soo Kim , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
发明人： Hyung-Soo Kim , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
IPC分类号： G11C7/00
CPC分类号： H03L7/0816 , G11C7/1066 , G11C7/222 , H03L7/0805
摘要： A semiconductor memory device is able to generate an output enable signal in response to a read command and CAS latency information. The semiconductor memory device includes a delay locked loop configured to detect a phase difference of an external clock signal and a feedback clock signal, generate a delay control signal corresponding to the detected phase difference, and generate a DLL clock signal by delaying the external clock signal for a time corresponding to the delay control signal, a delay configured to output an active signal as an output enable reset signal in response to the delay control signal and an output enable signal generator configured to be reset in response to the output enable reset signal and generate an output enable signal in response to a read signal and a CAS latency signal by counting the external clock signal and the DLL clock signal.
摘要翻译：半导体存储器件能够响应于读取命令和CAS延迟信息而产生输出使能信号。半导体存储器件包括：延迟锁定环，被配置为检测外部时钟信号和反馈时钟信号的相位差，产生对应于检测到的相位差的延迟控制信号，并通过延迟外部时钟信号产生DLL时钟信号延迟一段时间对应于延迟控制信号，延迟配置为响应于延迟控制信号而输出有效信号作为输出使能复位信号;以及输出使能信号发生器，其被配置为响应于输出使能复位信号复位;以及通过对外部时钟信号和DLL时钟信号进行计数，响应于读取信号和CAS等待时间信号产生输出使能信号。

7. 发明授权

US08143940B2 Internal supply voltage generating circuit and method for generating internal supply voltage 失效
标题翻译：内部电源电压发生电路及产生内部电源电压的方法
公开(公告)号：US08143940B2
公开(公告)日：2012-03-27
申请号：US12347605
申请日：2008-12-31
申请人： Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
发明人： Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
IPC分类号： G05F1/10 , G05F3/02
CPC分类号： G05F1/56 , G11C5/145 , H03L7/0812 , H03L7/093
摘要： An internal supply voltage generating circuit includes a clock comparator configured to compare a first clock signal having clock information corresponding to a level of a reference voltage with a second clock signal having clock information corresponding to a level of an internal supply voltage, a control signal generator configured to generate a driving control voltage having a voltage level corresponding to an output signal of the clock comparator; and a driver configured to drive a terminal of the internal supply voltage in response to the driving control voltage.
摘要翻译：内部电源电压产生电路包括：时钟比较器，被配置为将具有与参考电压电平相对应的时钟信息的第一时钟信号与具有对应于内部电源电压电平的时钟信息的第二时钟信号进行比较;控制信号发生器被配置为产生具有与所述时钟比较器的输出信号相对应的电压电平的驱动控制电压; 以及配置为响应于驱动控制电压驱动内部电源电压的端子的驱动器。

8. 发明授权

US07952364B2 Power noise detecting device and power noise control device using the same 失效
标题翻译：功率噪声检测装置和功率噪声控制装置使用相同
公开(公告)号：US07952364B2
公开(公告)日：2011-05-31
申请号：US12332294
申请日：2008-12-10
申请人： Hyung-Soo Kim , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
发明人： Hyung-Soo Kim , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
IPC分类号： G01R29/26
CPC分类号： H03H1/0007 , H03K19/00346
摘要： A power noise detecting device includes a plurality of power lines, and a power noise detecting part configured to detect power noise by rectifying voltages of the plurality of power lines and converting the rectified voltages into effective voltages.
摘要翻译：电力噪声检测装置包括多个电力线，以及电力噪声检测部，被配置为通过整流多个电力线的电压并将整流电压转换为有效电压来检测电力噪声。

9. 发明授权

US07936620B2 Receiver of semiconductor memory apparatus 有权
标题翻译：半导体存储器的接收器
公开(公告)号：US07936620B2
公开(公告)日：2011-05-03
申请号：US12483413
申请日：2009-06-12
申请人： Tae-Jin Hwang , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
发明人： Tae-Jin Hwang , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
IPC分类号： G11C7/00
CPC分类号： G11C7/1078 , G11C7/1084
摘要： A receiver of a semiconductor memory apparatus includes a first input transistor configured to be turned ON when an input signal is equal to or more than a predetermined level; a second input transistor configured to be turned ON when the input signal is equal to or less than the predetermined level; a first output node voltage control unit configured to increase a voltage level of an output node when the first input transistor is turned ON; a second output node voltage control unit configured to decrease the voltage level of the output node when the second input transistor is turned ON; a third input transistor configured to increase the voltage level of the output node when an inversion signal of the input signal is equal to or less than the predetermined voltage level; and a fourth input transistor configured to decrease the voltage level of the output node when the inversion signal of the input signal is equal to or more than the predetermined voltage level.
摘要翻译：半导体存储装置的接收器包括：第一输入晶体管，其配置为当输入信号等于或大于预定电平时导通; 配置为当输入信号等于或小于预定电平时导通的第二输入晶体管; 第一输出节点电压控制单元，被配置为当所述第一输入晶体管导通时增加输出节点的电压电平; 第二输出节点电压控制单元，被配置为当所述第二输入晶体管导通时降低所述输出节点的电压电平; 第三输入晶体管，被配置为当所述输入信号的反相信号等于或小于所述预定电压电平时，增加所述输出节点的电压电平; 以及第四输入晶体管，被配置为当输入信号的反相信号等于或大于预定电压电平时降低输出节点的电压电平。

10. 发明授权

US07863957B2 Duty cycle correction circuit and semiconductor integrated circuit apparatus including the same 有权
标题翻译：占空比校正电路和包括其的半导体集成电路装置
公开(公告)号：US07863957B2
公开(公告)日：2011-01-04
申请号：US12331294
申请日：2008-12-09
申请人： Jae-Min Jang , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Chang-Kun Park
发明人： Jae-Min Jang , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Chang-Kun Park
IPC分类号： H03K5/04
CPC分类号： H03K5/1565 , H03K5/151 , H03K2005/00058
摘要： A duty cycle correction circuit includes a phase splitter configured to control a phase of a DLL clock signal to generate a rising clock signal and a falling clock signal, a clock delay unit configured to delay the rising clock signal and the falling clock signal in response to control signals to generate a delayed rising clock signal and a delayed falling clock signal, a duty ratio correction unit configured to generate a correction rising clock signal and a correction falling clock signal that toggle in response to an edge timing of the delayed rising clock signal and the delayed falling clock signal, and a delay control unit configured to detect duty cycles of the correction rising clock signal and the correction falling clock signal to generate the control signals.
摘要翻译：占空比校正电路包括：相位分离器，被配置为控制DLL时钟信号的相位以产生上升时钟信号和下降时钟信号;时钟延迟单元，被配置为响应于时钟信号延迟上升时钟信号和下降时钟信号控制信号以产生延迟的上升时钟信号和延迟的下降时钟信号，占空比校正单元，被配置为产生校正上升时钟信号和校正下降时钟信号，该时钟信号响应于延迟的上升时钟信号的边沿定时而触发，延迟下降时钟信号，以及延迟控制单元，被配置为检测校正上升时钟信号和校正下降时钟信号的占空比，以产生控制信号。

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