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1. 发明申请

US20090179193A1 CARBON NANOTUBE BASED INTEGRATED SEMICONDUCTOR CIRCUIT 失效
标题翻译：基于碳纳米管的集成半导体电路
公开(公告)号：US20090179193A1
公开(公告)日：2009-07-16
申请号：US11972669
申请日：2008-01-11
申请人： Joerg Appenzeller , AJ Kleinosowski , Edward J. Nowak , Richard Q. Williams
发明人： Joerg Appenzeller , AJ Kleinosowski , Edward J. Nowak , Richard Q. Williams
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L51/0541 , B82Y10/00 , H01L27/11 , H01L27/1104 , H01L27/283 , H01L51/0048 , H01L51/0558 , Y10S977/742 , Y10S977/75 , Y10S977/751 , Y10S977/752
摘要： Gate electrodes are formed on a semiconducting carbon nanotube, followed by deposition and patterning of a hole-inducing material layer and an electron inducing material layer on the carbon nanotube according to the pattern of a one dimensional circuit layout. Electrical isolation may be provided by cutting a portion of the carbon nanotube, forming a reverse biased junction of a hole-induced region and an electron-induced region of the carbon nanotube, or electrically biasing a region through a dielectric layer between two device regions of the carbon nanotube. The carbon nanotubes may be arranged such that hole-inducing material layer and electron-inducing material layer may be assigned to each carbon nanotube to form periodic structures such as a static random access memory (SRAM) array.
摘要翻译：在半导体碳纳米管上形成栅电极，然后根据一维电路布局的图案在碳纳米管上沉积和图案化空穴诱导材料层和电子诱导材料层。可以通过切割碳纳米管的一部分来形成电气隔离，形成空穴诱导区域和碳纳米管的电子诱导区域的反向偏置接合点，或者通过介电层在两个器件区域之间电气偏置区域碳纳米管。碳纳米管可以被布置为使得可以将空穴诱导材料层和电子诱导材料层分配给每个碳纳米管以形成诸如静态随机存取存储器（SRAM）阵列的周期性结构。

2. 发明授权

US07786466B2 Carbon nanotube based integrated semiconductor circuit 失效
标题翻译：碳纳米管集成半导体电路
公开(公告)号：US07786466B2
公开(公告)日：2010-08-31
申请号：US11972669
申请日：2008-01-11
申请人： Joerg Appenzeller , AJ Kleinosowski , Edward J. Nowak , Richard Q. Williams
发明人： Joerg Appenzeller , AJ Kleinosowski , Edward J. Nowak , Richard Q. Williams
IPC分类号： H01L51/00
CPC分类号： H01L51/0541 , B82Y10/00 , H01L27/11 , H01L27/1104 , H01L27/283 , H01L51/0048 , H01L51/0558 , Y10S977/742 , Y10S977/75 , Y10S977/751 , Y10S977/752
摘要： Gate electrodes are formed on a semiconducting carbon nanotube, followed by deposition and patterning of a hole-inducing material layer and an electron inducing material layer on the carbon nanotube according to the pattern of a one dimensional circuit layout. Electrical isolation may be provided by cutting a portion of the carbon nanotube, forming a reverse biased junction of a hole-induced region and an electron-induced region of the carbon nanotube, or electrically biasing a region through a dielectric layer between two device regions of the carbon nanotube. The carbon nanotubes may be arranged such that hole-inducing material layer and electron-inducing material layer may be assigned to each carbon nanotube to form periodic structures such as a static random access memory (SRAM) array.
摘要翻译：在半导体碳纳米管上形成栅电极，然后根据一维电路布局的图案在碳纳米管上沉积和图案化空穴诱导材料层和电子诱导材料层。可以通过切割碳纳米管的一部分来形成电气隔离，形成空穴诱导区域和碳纳米管的电子诱导区域的反向偏置接合点，或者通过介电层在两个器件区域之间电气偏置区域碳纳米管。碳纳米管可以被布置为使得可以将空穴诱导材料层和电子诱导材料层分配给每个碳纳米管以形成诸如静态随机存取存储器（SRAM）阵列的周期性结构。

3. 发明申请

US20110263101A1 CARBON NANOTUBE BASED INTEGRATED SEMICONDUCTOR CIRCUIT 失效
标题翻译：基于碳纳米管的集成半导体电路
公开(公告)号：US20110263101A1
公开(公告)日：2011-10-27
申请号：US13170525
申请日：2011-06-28
申请人： Joerg Appenzeller , AJ Kleinosowski , Edward J. Nowak , Richard Q. Williams
发明人： Joerg Appenzeller , AJ Kleinosowski , Edward J. Nowak , Richard Q. Williams
IPC分类号： H01L21/20 , B82Y40/00
CPC分类号： H01L51/0541 , B82Y10/00 , H01L27/11 , H01L27/1104 , H01L27/283 , H01L51/0048 , H01L51/0558 , Y10S977/742 , Y10S977/75 , Y10S977/751 , Y10S977/752
摘要： Gate electrodes are formed on a semiconducting carbon nanotube, followed by deposition and patterning of a hole-inducing material layer and an electron inducing material layer on the carbon nanotube according to the pattern of a one dimensional circuit layout. Electrical isolation may be provided by cutting a portion of the carbon nanotube, forming a reverse biased junction of a hole-induced region and an electron-induced region of the carbon nanotube, or electrically biasing a region through a dielectric layer between two device regions of the carbon nanotube. The carbon nanotubes may be arranged such that hole-inducing material layer and electron-inducing material layer may be assigned to each carbon nanotube to form periodic structures such as a static random access memory (SRAM) array.
摘要翻译：在半导体碳纳米管上形成栅电极，然后根据一维电路布局的图案在碳纳米管上沉积和图案化空穴诱导材料层和电子诱导材料层。可以通过切割碳纳米管的一部分来形成电气隔离，形成空穴诱导区域和碳纳米管的电子诱导区域的反向偏置接合点，或者通过电介质层对两个器件区域之间的电介质层进行电偏置碳纳米管。碳纳米管可以被布置为使得可以将空穴诱导材料层和电子诱导材料层分配给每个碳纳米管以形成诸如静态随机存取存储器（SRAM）阵列的周期性结构。

4. 发明申请

US20100295025A1 CARBON NANOTUBE BASED INTEGRATED SEMICONDUCTOR CIRCUIT 有权
标题翻译：基于碳纳米管的集成半导体电路
公开(公告)号：US20100295025A1
公开(公告)日：2010-11-25
申请号：US12850259
申请日：2010-08-04
申请人： Joerg Appenzeller , AJ Kleinosowski , Edward J. Nowak , Richard Q. Williams
发明人： Joerg Appenzeller , AJ Kleinosowski , Edward J. Nowak , Richard Q. Williams
IPC分类号： H01L27/11 , H01L21/8244
CPC分类号： H01L51/0541 , B82Y10/00 , H01L27/11 , H01L27/1104 , H01L27/283 , H01L51/0048 , H01L51/0558 , Y10S977/742 , Y10S977/75 , Y10S977/751 , Y10S977/752
摘要： Gate electrodes are formed on a semiconducting carbon nanotube, followed by deposition and patterning of a hole-inducing material layer and an electron inducing material layer on the carbon nanotube according to the pattern of a one dimensional circuit layout. Electrical isolation may be provided by cutting a portion of the carbon nanotube, forming a reverse biased junction of a hole-induced region and an electron-induced region of the carbon nanotube, or electrically biasing a region through a dielectric layer between two device regions of the carbon nanotube. The carbon nanotubes may be arranged such that hole-inducing material layer and electron-inducing material layer may be assigned to each carbon nanotube to form periodic structures such as a static random access memory (SRAM) array.
摘要翻译：在半导体碳纳米管上形成栅电极，然后根据一维电路布局的图案在碳纳米管上沉积和图案化空穴诱导材料层和电子诱导材料层。可以通过切割碳纳米管的一部分来形成电气隔离，形成空穴诱导区域和碳纳米管的电子诱导区域的反向偏置接合点，或者通过介电层在两个器件区域之间电气偏置区域碳纳米管。碳纳米管可以被布置为使得可以将空穴诱导材料层和电子诱导材料层分配给每个碳纳米管以形成诸如静态随机存取存储器（SRAM）阵列的周期性结构。

5. 发明授权

US08211741B2 Carbon nanotube based integrated semiconductor circuit 失效
标题翻译：碳纳米管集成半导体电路
公开(公告)号：US08211741B2
公开(公告)日：2012-07-03
申请号：US13170525
申请日：2011-06-28
申请人： Joerg Appenzeller , AJ Kleinosowski , Edward J. Nowak , Richard Q. Williams
发明人： Joerg Appenzeller , AJ Kleinosowski , Edward J. Nowak , Richard Q. Williams
IPC分类号： H01L51/00
CPC分类号： H01L51/0541 , B82Y10/00 , H01L27/11 , H01L27/1104 , H01L27/283 , H01L51/0048 , H01L51/0558 , Y10S977/742 , Y10S977/75 , Y10S977/751 , Y10S977/752
摘要： Gate electrodes are formed on a semiconducting carbon nanotube, followed by deposition and patterning of a hole-inducing material layer and an electron inducing material layer on the carbon nanotube according to the pattern of a one dimensional circuit layout. Electrical isolation may be provided by cutting a portion of the carbon nanotube, forming a reverse biased junction of a hole-induced region and an electron-induced region of the carbon nanotube, or electrically biasing a region through a dielectric layer between two device regions of the carbon nanotube. The carbon nanotubes may be arranged such that hole-inducing material layer and electron-inducing material layer may be assigned to each carbon nanotube to form periodic structures such as a static random access memory (SRAM) array.
摘要翻译：在半导体碳纳米管上形成栅电极，然后根据一维电路布局的图案在碳纳米管上沉积和图案化空穴诱导材料层和电子诱导材料层。可以通过切割碳纳米管的一部分来形成电气隔离，形成空穴诱导区域和碳纳米管的电子诱导区域的反向偏置接合点，或者通过电介质层对两个器件区域之间的电介质层进行电偏置碳纳米管。碳纳米管可以被布置为使得可以将空穴诱导材料层和电子诱导材料层分配给每个碳纳米管以形成诸如静态随机存取存储器（SRAM）阵列的周期性结构。

6. 发明授权

US08017934B2 Carbon nanotube based integrated semiconductor circuit 有权
标题翻译：碳纳米管集成半导体电路
公开(公告)号：US08017934B2
公开(公告)日：2011-09-13
申请号：US12850259
申请日：2010-08-04
申请人： Joerg Appenzeller , AJ Kleinosowski , Edward J. Nowak , Richard Q. Williams
发明人： Joerg Appenzeller , AJ Kleinosowski , Edward J. Nowak , Richard Q. Williams
IPC分类号： H01L51/00
CPC分类号： H01L51/0541 , B82Y10/00 , H01L27/11 , H01L27/1104 , H01L27/283 , H01L51/0048 , H01L51/0558 , Y10S977/742 , Y10S977/75 , Y10S977/751 , Y10S977/752
摘要： Gate electrodes are formed on a semiconducting carbon nanotube, followed by deposition and patterning of a hole-inducing material layer and an electron inducing material layer on the carbon nanotube according to the pattern of a one dimensional circuit layout. Electrical isolation may be provided by cutting a portion of the carbon nanotube, forming a reverse biased junction of a hole-induced region and an electron-induced region of the carbon nanotube, or electrically biasing a region through a dielectric layer between two device regions of the carbon nanotube. The carbon nanotubes may be arranged such that hole-inducing material layer and electron-inducing material layer may be assigned to each carbon nanotube to form periodic structures such as a static random access memory (SRAM) array.
摘要翻译：在半导体碳纳米管上形成栅电极，然后根据一维电路布局的图案在碳纳米管上沉积和图案化空穴诱导材料层和电子诱导材料层。可以通过切割碳纳米管的一部分来形成电气隔离，形成空穴诱导区域和碳纳米管的电子诱导区域的反向偏置接合点，或者通过介电层在两个器件区域之间电气偏置区域碳纳米管。碳纳米管可以被布置为使得可以将空穴诱导材料层和电子诱导材料层分配给每个碳纳米管以形成诸如静态随机存取存储器（SRAM）阵列的周期性结构。

7. 发明申请

US20080016477A1 Method for Soft Error Modeling with Double Current Pulse 失效
标题翻译：双电流脉冲软误差建模方法
公开(公告)号：US20080016477A1
公开(公告)日：2008-01-17
申请号：US11457174
申请日：2006-07-13
申请人： AJ Kleinosowski , Philip J. Oldiges , Paul M. Solomon , Richard Q. Williams
发明人： AJ Kleinosowski , Philip J. Oldiges , Paul M. Solomon , Richard Q. Williams
IPC分类号： G06F17/50
CPC分类号： G06F17/5036 , G01R31/31816 , G01R31/318357
摘要： A method of modeling soft errors in a logic circuit uses two separate current sources inserted at the source and drain of a device to simulate a single event upset (SEU) caused by, e.g., an alpha-particle strike. In an nfet implementation the current flows from the source or drain toward the body of the device. Current waveforms having known amplitudes are injected at the current sources while simulating operation of the logic circuit and the state of the logic circuit is determined from the simulated operation. The amplitudes of the current waveforms can be independently adjusted. The simulator monitors the state of device and makes a log entry when a transition occurs. The process may be repeated for other devices in the logic circuit to provide an overall characterization of the susceptibility of the circuit to soft errors.
摘要翻译：在逻辑电路中对软错误进行建模的方法使用在设备的源极和漏极处插入的两个单独的电流源来模拟由例如α粒子撞击引起的单个事件不正常（SEU）。在nfet实现中，电流从源极或漏极流向器件的主体。具有已知幅度的电流波形在电流源处被注入，同时模拟逻辑电路的操作，并且根据模拟操作确定逻辑电路的状态。可以独立调整电流波形的幅度。模拟器监视设备的状态，并在转换发生时创建日志条目。逻辑电路中的其他器件可以重复该过程以提供电路对软错误的敏感性的整体表征。

8. 发明授权

US07881135B2 Method for QCRIT measurement in bulk CMOS using a switched capacitor circuit 有权
标题翻译：使用开关电容电路的批量CMOS QCRIT测量方法
公开(公告)号：US07881135B2
公开(公告)日：2011-02-01
申请号：US11679406
申请日：2007-02-27
申请人： Ethan H. Cannon , Alan J. Drake , Fadi H. Gebara , John P. Keane , AJ Kleinosowski
发明人： Ethan H. Cannon , Alan J. Drake , Fadi H. Gebara , John P. Keane , AJ Kleinosowski
IPC分类号： G11C29/00
CPC分类号： G01R31/318594 , G01R31/318597
摘要： A test setup for estimating the critical charge of a circuit under test (CUT) uses a charge injection circuit having a switched capacitor that is selectively connected to a node of the CUT. A voltage measurement circuit measures the voltage at a tap in the charge injection circuit before and after the charge is injected. When the injected charge causes an upset in the logical state of the CUT, the critical charge is calculated as the product of the voltage difference and the known capacitance of the capacitor. In one embodiment, (NMOS drain strike simulation) the amount of charge injected is controlled by a variable pulse width generator gating the switch of the charge injection circuit. In another embodiment (PMOS drain strike simulation) the amount of charge injected is controlled by a variable voltage supply selectively connected to the charge storage node.
摘要翻译：用于估计被测电路的临界电荷的测试装置（CUT）使用具有选择性地连接到CUT的节点的开关电容器的电荷注入电路。电压测量电路测量电荷注入前后电荷注入电路中的电压。当注入的电荷导致CUT的逻辑状态不正常时，临界电荷被计算为电压差和电容器的已知电容的乘积。在一个实施例中，（NMOS漏极击穿模拟）通过门控电荷注入电路的开关的可变脉冲宽度发生器来控制注入的电荷量。在另一实施例（PMOS漏极击穿模拟）中，注入的电荷量由选择性地连接到电荷存储节点的可变电压电源来控制。

9. 发明授权

US07193446B2 Dynamic logic circuit incorporating reduced leakage state-retaining devices 失效
标题翻译：动态逻辑电路结合了减少的泄漏状态保持装置
公开(公告)号：US07193446B2
公开(公告)日：2007-03-20
申请号：US10992486
申请日：2004-11-18
申请人： Hung Cai Ngo , Jente Benedict Kuang , Harmander Singh Deogun , AJ Kleinosowski
发明人： Hung Cai Ngo , Jente Benedict Kuang , Harmander Singh Deogun , AJ Kleinosowski
IPC分类号： H03K19/094
CPC分类号： H03K19/0963 , H03K19/0016
摘要： A dynamic logic circuit incorporating reduced leakage state-retaining devices reduces power consumption of processors and other systems incorporating dynamic circuits. A keeper circuit provides a low leakage retention of the state of the output stage of the dynamic circuit so that an output circuit foot device can be disabled except when required for a transition in the output of the dynamic circuit. The keeper circuit includes a transistor having a smaller area than a corresponding transistor in the output circuit, thus reducing leakage through the gate of the output circuit when the keeper circuit is holding the output and the output circuit foot device is disabled. A self-clocked control of the output circuit foot device can be provided via a delayed version of the dynamic logic gate output, or may be provided by an external control circuit that generates a delayed version of the precharge clock or a multi-cycle signal.
摘要翻译：结合减少泄漏状态保持装置的动态逻辑电路降低了处理器和其他结合动态电路的系统的功耗。保持器电路提供动态电路的输出级的状态的低泄漏保持，使得输出电路脚装置可以被禁用，除非在动态电路的输出中需要转换。保持器电路包括具有比输出电路中的对应晶体管更小的面积的晶体管，从而当保持器电路保持输出并且输出电路脚器件被禁用时减小通过输出电路的栅极的泄漏。可以通过延迟版本的动态逻辑门输出来提供输出电路脚装置的自定时控制，或者可以由产生预充电时钟的延迟版本或多周期信号的外部控制电路提供。

10. 发明授权

US07202705B2 Dynamic logic circuit apparatus and method for reducing leakage power consumption via separate clock and output stage control 失效
标题翻译：用于通过单独的时钟和输出级控制来减少泄漏功耗的动态逻辑电路装置和方法
公开(公告)号：US07202705B2
公开(公告)日：2007-04-10
申请号：US10992488
申请日：2004-11-18
申请人： Hung Cai Ngo , Jente Benedict Kuang , Harmander Singh Deogun , AJ Kleinosowski
发明人： Hung Cai Ngo , Jente Benedict Kuang , Harmander Singh Deogun , AJ Kleinosowski
IPC分类号： H03K19/096
CPC分类号： H03K19/0016 , H03K19/0966
摘要： A dynamic logic circuit apparatus and method for reducing leakage power consumption via separate clock and output stage control reduces power consumption of processors and other systems incorporating dynamic circuits. The power control signal may be a delayed version of the logic clock and turns on the output inverter foot device after the dynamic node has had sufficient time to evaluate, providing a fast evaluate time and reducing leakage through the inverter input when the foot device is off. Alternatively, a coarsely timed static power control signal may be used to control the inverter foot devices. The drains of the inverter foot devices can be commonly connected across multiple circuits, reducing the foot device total area.
摘要翻译：用于通过单独的时钟和输出级控制减少泄漏功率消耗的动态逻辑电路装置和方法降低了处理器和结合动态电路的其他系统的功耗。功率控制信号可以是逻辑时钟的延迟版本，并且在动态节点有足够的时间评估之后接通输出的反相器脚装置，当脚装置关闭时提供快速的评估时间并减少逆变器输入的泄漏。或者，可以使用粗定时静态功率控制信号来控制逆变器脚装置。逆变器脚踏装置的排水管可以通过多个回路共同连接，减少了脚踏装置总面积。

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