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1. 发明申请

US20120228619A1 DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：显示面板及其制造方法
公开(公告)号：US20120228619A1
公开(公告)日：2012-09-13
申请号：US13472716
申请日：2012-05-16
申请人： Joo-Ae YOUN , Yang-Ho BAE , Chang-Oh JEONG , Chong-Chul CHAI , Pil-Sang YUN , Honglong NING , Byeong-Beom KIM
发明人： Joo-Ae YOUN , Yang-Ho BAE , Chang-Oh JEONG , Chong-Chul CHAI , Pil-Sang YUN , Honglong NING , Byeong-Beom KIM
IPC分类号： H01L29/786 , H01L33/08
CPC分类号： H01L33/0041 , H01L27/124 , H01L29/458
摘要： A display panel includes; a lower gate line, a lower data line disposed substantially perpendicular to the lower gate line, a thin film transistor (“TFT”) connected to the lower gate line and the lower data line, an insulating layer disposed on the lower gate line, the lower data line, and the TFT and having a plurality of trenches exposing the lower gate line and the lower data line, an upper gate line disposed in the trench on the lower gate line, an upper data line disposed in the trench on the lower data line, and a pixel electrode connected to the TFT.
摘要翻译：显示面板包括：下栅极线，基本上垂直于下栅极线设置的下数据线，连接到下栅极线和下数据线的薄膜晶体管（“TFT”），设置在下栅极线上的绝缘层，下数据线和TFT，并且具有暴露下栅极线和下数据线的多个沟槽，设置在下栅极线上的沟槽中的上栅极线，设置在下数据上的沟槽中的上数据线线和与TFT连接的像素电极。

2. 发明申请

US20090212290A1 DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：显示面板及其制造方法
公开(公告)号：US20090212290A1
公开(公告)日：2009-08-27
申请号：US12354115
申请日：2009-01-15
申请人： Joo-Ae YOUN , Yang-Ho BAE , Chang-Oh JEONG , Chong-Chul CHAI , Pil-Sang YUN , Honglong NING , Byeong-Beom KIM
发明人： Joo-Ae YOUN , Yang-Ho BAE , Chang-Oh JEONG , Chong-Chul CHAI , Pil-Sang YUN , Honglong NING , Byeong-Beom KIM
IPC分类号： H01L27/088 , H01L21/77
CPC分类号： H01L33/0041 , H01L27/124 , H01L29/458
摘要： A display panel includes; a lower gate line, a lower data line disposed substantially perpendicular to the lower gate line, a thin film transistor (“TFT”) connected to the lower gate line and the lower data line, an insulating layer disposed on the lower gate line, the lower data line, and the TFT and having a plurality of trenches exposing the lower gate line and the lower data line, an upper gate line disposed in the trench on the lower gate line, an upper data line disposed in the trench on the lower data line, and a pixel electrode connected to the TFT.
摘要翻译：显示面板包括：下栅极线，基本上垂直于下栅极线设置的下数据线，连接到下栅极线和下数据线的薄膜晶体管（“TFT”），设置在下栅极线上的绝缘层，下数据线和TFT，并且具有暴露下栅极线和下数据线的多个沟槽，设置在下栅极线上的沟槽中的上栅极线，设置在下数据上的沟槽中的上数据线线和与TFT连接的像素电极。

3. 发明申请

US20110097961A1 DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示面板及其制造方法
公开(公告)号：US20110097961A1
公开(公告)日：2011-04-28
申请号：US12981287
申请日：2010-12-29
申请人： Min-Seok OH , Yang-Ho BAE , Pil-Sang YUN , Byeong-Beom KIM , Seung-Ha CHOI , Sang-Gab KIM , Chang-Ho JEONG , Shin-Il CHOI , Hong-Kee CHIN , Yu-Gwang JEONG , Dong-Ju YANG
发明人： Min-Seok OH , Yang-Ho BAE , Pil-Sang YUN , Byeong-Beom KIM , Seung-Ha CHOI , Sang-Gab KIM , Chang-Ho JEONG , Shin-Il CHOI , Hong-Kee CHIN , Yu-Gwang JEONG , Dong-Ju YANG
IPC分类号： H01J9/20
CPC分类号： H01L27/12 , G02F2001/136295 , H01L27/124 , H01L29/458
摘要： In a display panel and a method of manufacturing the display panel, a gate line, a data line, and source and drain electrodes including a same material as the data line are formed on a substrate constituting the display panel, and the data line includes an aluminum based alloy containing sufficient nickel to inhibit corrosion during dry etching. The corrosion resistance of the AlNi-containing alloy helps prevent corrosion of the data line, the source electrode, and the drain electrode during selective dry etching that shapes these lines and electrodes.
摘要翻译：在显示面板和制造显示面板的方法中，在构成显示面板的基板上形成包括与数据线相同材料的栅极线，数据线以及源极和漏极，并且数据线包括铝基合金含有足够的镍以在干蚀刻期间抑制腐蚀。含有AlNi的合金的耐腐蚀性有助于防止在形成这些线和电极的选择性干蚀刻期间数据线，源电极和漏电极的腐蚀。

4. 发明申请

US20080213702A1 METHOD FOR PATTERNING CONDUCTIVE POLYMER 审中-公开
标题翻译：用于形成导电聚合物的方法
公开(公告)号：US20080213702A1
公开(公告)日：2008-09-04
申请号：US11932496
申请日：2007-10-31
申请人： Yang-Ho BAE , Chang-Oh JEONG , Byeong-Beom KIM , Jae-Gab LEE , Tae-Wook KWON
发明人： Yang-Ho BAE , Chang-Oh JEONG , Byeong-Beom KIM , Jae-Gab LEE , Tae-Wook KWON
IPC分类号： G03F7/00
CPC分类号： H01L51/0021 , G03F7/0755 , G03F7/165 , H01L51/0023
摘要： A method for patterning a conductive polymer that adheres well to an oxide layer is presented. The method includes forming a self-assembled monolayer on a substrate, patterning the self-assembled monolayer, forming a catalyst layer on the self-assembled monolayer, and forming a conductive polymer layer on the self-assembled monolayer.
摘要翻译：提出了一种用于图案化粘附到氧化物层的导电聚合物的方法。该方法包括在衬底上形成自组装单层，图案化自组装单层，在自组装单层上形成催化剂层，并在自组装单层上形成导电聚合物层。

5. 发明申请

US20080138942A1 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20080138942A1
公开(公告)日：2008-06-12
申请号：US12031121
申请日：2008-02-14
申请人： Je-Hun LEE , Yang-Ho BAE , Beom-Seok CHO , Chang-Oh JEONG
发明人： Je-Hun LEE , Yang-Ho BAE , Beom-Seok CHO , Chang-Oh JEONG
IPC分类号： H01L21/336
CPC分类号： H01L27/3279 , H01L27/124 , H01L27/1288 , H01L51/0023 , H01L51/56
摘要： The invention provides a thin film transistor (TFT) array panel that includes an insulating substrate; a gate line formed on the insulating substrate and having a first layer of an Al containing metal, a second layer of a Cu containing metal that is thicker than the first layer, and a gate electrode; a gate insulating layer arranged on the gate line; a semiconductor arranged on the gate insulating layer; a data line having a source electrode and arranged on the gate insulating layer and the semiconductor; a drain electrode arranged on the gate insulating layer and the semiconductor and facing the source electrode; a passivation layer having a contact hole and arranged on the data line and the drain electrode; and a pixel electrode arranged on the passivation layer and coupled with the drain electrode through the contact hole.
摘要翻译：本发明提供一种薄膜晶体管（TFT）阵列面板，其包括绝缘基板; 形成在所述绝缘基板上并具有含有Al的金属的第一层，比所述第一层更厚的含Cu金属的第二层的栅极线和栅电极; 栅极绝缘层，布置在栅极线上; 布置在栅绝缘层上的半导体; 数据线，其具有源电极并且布置在所述栅极绝缘层和所述半导体上; 布置在所述栅绝缘层和所述半导体上并面对所述源电极的漏电极; 钝化层，其具有接触孔并且布置在所述数据线和所述漏电极上; 以及设置在钝化层上并通过接触孔与漏电极耦合的像素电极。

6. 发明申请

US20120037913A1 THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20120037913A1
公开(公告)日：2012-02-16
申请号：US13167668
申请日：2011-06-23
申请人： O-Sung SEO , Seong-Hun KIM , Yang-Ho BAE , Jean-Ho SONG
发明人： O-Sung SEO , Seong-Hun KIM , Yang-Ho BAE , Jean-Ho SONG
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78618 , H01L29/458 , H01L29/66765
摘要： A thin-film transistor (TFT) and a method of manufacturing the same are disclosed herein. The TFT may include a gate electrode disposed on an insulating substrate, an insulating layer disposed on the insulating substrate and the gate electrode, an active layer pattern disposed on the insulating layer to overlap the gate electrode, a source electrode disposed on the insulating layer and at least part of which overlaps the active layer pattern, and a drain electrode which is separated from the source electrode and at least part of which overlaps the active layer pattern. A first ohmic contact layer pattern may be disposed between the active layer pattern and the source electrode and between the active layer pattern and the drain electrode. The first ohmic contact layer may have higher nitrogen content on its surface than in other portions of the first ohmic contact layer.
摘要翻译：本文公开了一种薄膜晶体管（TFT）及其制造方法。 TFT可以包括设置在绝缘基板上的栅电极，设置在绝缘基板上的绝缘层和栅电极，设置在绝缘层上的与栅电极重叠的有源层图案，设置在绝缘层上的源电极和其至少一部分与有源层图案重叠，以及与源电极分离并且其至少一部分与有源层图案重叠的漏电极。可以在有源层图案和源电极之间以及有源层图案和漏电极之间设置第一欧姆接触层图案。第一欧姆接触层在其表面上可以具有比在第一欧姆接触层的其它部分更高的氮含量。

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