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1. 发明授权

US4329189A Channelled substrate double heterostructure lasers 失效
标题翻译：通道衬底双异质结构激光器
公开(公告)号：US4329189A
公开(公告)日：1982-05-11
申请号：US282863
申请日：1981-07-13
申请人： Julian P. Noad , Anthony J. Springthorpe , Christopher M. Look
发明人： Julian P. Noad , Anthony J. Springthorpe , Christopher M. Look
IPC分类号： H01L21/20 , H01L33/00 , H01L33/24 , H01S5/223
CPC分类号： H01L33/24 , H01L21/02395 , H01L21/02488 , H01L21/02546 , H01L21/0262 , H01L33/0062 , H01S5/2232 , Y10S148/056 , Y10S148/065 , Y10S148/11
摘要： In a fabricating a III-V compound, for example, GaAs, having a layered structure a first layer is grown on a planar substrate by a vapor deposition process adapted to produce differential growth while a subsequent layer is grown by a deposition process which restores planarity. In this way a uniformly thick combination layer is produced with a non-planar junction between its composite layers. Particularly in the fabrication of channelled substrate double heterostructure lasers, a channelled blocking layer is grown by organo-metallic pyrolysis (OMP) and a subsequent confining layer is grown using liquid phase epitaxy (LPE). The OMP process produces a channel with flanking shoulder portions which permit LPE growth of a very thin confining layer immediately above the shoulder portions thereby improving linearity of the device.
摘要翻译：在制造III-V族化合物时，例如，具有层状结构的第一层的GaAs通过适于产生差异生长的气相沉积工艺在平面基板上生长，而随后的层通过沉积工艺生长，其恢复平面度。以这种方式，在其复合层之间产生具有非平面结的均匀厚的组合层。特别是在通道衬底双异质结构激光器的制造中，通过有机金属热解（OMP）生长通道阻挡层，并且随后使用液相外延（LPE）生长限制层。 OMP过程产生具有侧翼部分的通道，其允许紧邻肩部部分上方的非常薄的限制层的LPE生长，从而提高装置的线性。

2. 发明授权

US4323859A Chanelled substrate double heterostructure lasers 失效
标题翻译：香奈儿衬底双异质结构激光器
公开(公告)号：US4323859A
公开(公告)日：1982-04-06
申请号：US118653
申请日：1980-02-04
申请人： Julian P. Noad , Anthony J. Springthorpe , Christopher M. Look
发明人： Julian P. Noad , Anthony J. Springthorpe , Christopher M. Look
IPC分类号： H01L33/00 , H01S5/223 , H01S3/19
CPC分类号： H01L33/0062 , H01S5/2232
摘要： In fabricating a III-V compound, for example, GaAs, having a layered structure a first layer is grown on a planar substrate by a vapor deposition process adapted to produce differential growth while a subsequent layer is grown by a deposition process which restores planarity. In this way, a uniformly thick combination layer is produced with a non-planar junction between its composite layers. Particularly in the fabrication of channelled substrate double heterostructure lasers, a channelled blocking layer is grown by organo-metallic pyrolysis (OMP) and a subsequent confining layer is grown using liquid phase epitaxy (LPE). The OMP process produces a channel with flanking shoulder portions which permit LPE growth of a very thin confining layer immediately above the shoulder portions thereby improving linearity of the device.
摘要翻译：在制造III-V族化合物时，例如，具有层状结构的第一层的GaAs通过适于产生差异生长的气相沉积工艺在平面基板上生长，而后续层通过恢复平面性的沉积工艺生长。以这种方式，在其复合层之间产生具有非平面结的均匀厚的组合层。特别是在通道衬底双异质结构激光器的制造中，通过有机金属热解（OMP）生长通道阻挡层，并且随后使用液相外延（LPE）生长限制层。 OMP过程产生具有侧翼部分的通道，其允许紧邻肩部部分上方的非常薄的限制层的LPE生长，从而提高装置的线性。

3. 发明授权

US06653213B2 Structure and method for doping of III-V compounds 失效
公开(公告)号：US06653213B2
公开(公告)日：2003-11-25
申请号：US09741350
申请日：2000-12-21
申请人： Anthony J. Springthorpe , Richard W. Streater , Aniket Joshi
发明人： Anthony J. Springthorpe , Richard W. Streater , Aniket Joshi
IPC分类号： H01L2100
CPC分类号： H01L33/305 , B82Y20/00 , H01L21/2205 , H01S5/305 , H01S5/34
摘要： A structure for doping of III-V compounds is provided. The structure is a multi-layered structure in which layers of dopant are alternated with layers of initially undoped III-V compound. Dopant diffuses from the layers of dopant into the layers of III-V compound. The structure does not facilitate the introduction of impurities into the III-V compound during the diffusion of the dopant.

4. 发明授权

US4889830A Zinc diffusion in the presence of cadmium into indium phosphide 失效
标题翻译：锌在镉存在下扩散成磷化铟
公开(公告)号：US4889830A
公开(公告)日：1989-12-26
申请号：US243138
申请日：1988-09-09
申请人： Anthony J. Springthorpe , Agnes Margittai , David Eger
发明人： Anthony J. Springthorpe , Agnes Margittai , David Eger
IPC分类号： H01L21/223
CPC分类号： H01L21/2233 , Y10S148/04 , Y10S252/95 , Y10S438/909
摘要： Zinc is diffused into indium phosphide in the presence of cadmium to prevent degradation of the indium phosphide surface.
摘要翻译：锌在镉存在下扩散到磷化铟中以防止磷化铟表面的劣化。

5. 发明授权

US4493287A Diffusion equipment 失效
标题翻译：扩散设备
公开(公告)号：US4493287A
公开(公告)日：1985-01-15
申请号：US446441
申请日：1982-12-03
申请人： Anthony J. Springthorpe
发明人： Anthony J. Springthorpe
IPC分类号： C30B31/10 , C23C13/08
CPC分类号： C30B31/103 , Y10S118/90
摘要： To secure accurate control over rapid diffusion such as the diffusion of zinc into gallium arsenide, the source and slices to be processed are isolated from one another during an initial warm-up period. This is done using one vessel for the crystal slice and a second vessel for the source. The source vessel initially blocks an opening in the slice vessel while the source and slice are brought to the desired diffusion temperature. The source vessel is then slid through the opening to a diffusing position in which a trailing part of the source vessel again plugs the opening in the slice vessel and in which an open part of the source vessel is now in the interior of the slice vessel. Use of this arrangement avoids the uncontrolled diffusion which occurs in current diffusion capsules during initial heating of the capsule.
摘要翻译：为了确保对快速扩散的准确控制，例如锌向砷化镓的扩散，待加工的源和切片在初始预热期间彼此隔离。这是使用一个用于晶体切片的容器和用于源的第二容器来完成的。源容器首先阻挡切片容器中的开口，同时使源和切片达到期望的扩散温度。然后将源容器滑动通过开口到扩散位置，在该扩散位置，源容器的尾部再次插入切片容器中的开口，并且源容器的开放部分现在处于切片容器的内部。使用这种布置避免了在胶囊的初始加热期间在当前扩散胶囊中发生的不受控制的扩散。

6. 发明授权

US4284884A Electro-optic devices 失效
标题翻译：电光设备
公开(公告)号：US4284884A
公开(公告)日：1981-08-18
申请号：US138747
申请日：1980-04-09
申请人： John C. Dyment , Jozef Straus , Tibor F. I. Kovats , William J. Sinclair , Anthony J. Springthorpe
发明人： John C. Dyment , Jozef Straus , Tibor F. I. Kovats , William J. Sinclair , Anthony J. Springthorpe
IPC分类号： H01L33/00 , G02B27/00
CPC分类号： H01L27/15 , H01L25/167 , H01L2924/0002
摘要： An electro-optic device for stabilizing the output level of a Burrus-type light emitting diode (LED) utilizes a photodiode to monitor side emission from an active region of the LED. Side emission closely tracks top emission, which is launched into an output fiber. An electrical analog is derived from the monitored side emission and is applied in a feedback loop to control modulation level or bias current to the LED. In this way, peak optical output (for digital systems) or r.m.s. output and linearity (for analog systems) is stabilized. The monitoring photodiode and the LED may be spatially separate or may form a unitary structure.
摘要翻译：用于稳定Burrus型发光二极管（LED）的输出电平的电光器件利用光电二极管监测来自LED的有源区域的侧发射。侧面发射密切跟踪顶部发射，发射到输出光纤。电气模拟源自监控侧发射，并且被施加在反馈环路中以控制到LED的调制电平或偏置电流。以这种方式，峰值光输出（用于数字系统）或r.m.s. 输出和线性（用于模拟系统）稳定。监控光电二极管和LED可以在空间上分离或者可以形成一体的结构。

7. 发明授权

US4163953A Double heterostructure laser for direct coupling to an optical fiber 失效
标题翻译：用于直接耦合到光纤的双异质结构激光器
公开(公告)号：US4163953A
公开(公告)日：1979-08-07
申请号：US813678
申请日：1977-07-07
申请人： Anthony J. Springthorpe , John C. Dyment
发明人： Anthony J. Springthorpe , John C. Dyment
IPC分类号： G02B6/42 , H01S3/00 , H01S5/00 , H01S5/026 , H01S5/18 , H01S5/42 , H01S3/19
CPC分类号： H01S5/42 , G02B6/4202 , G02B6/4214 , H01S5/026 , H01S5/18 , H01S3/005 , H01S5/005
摘要： A double heterostructure laser has a first confining layer on the substrate, an active layer on the first confining layer and a second confining layer on the active layer. A groove is etched through the second confining layer and active layer to form a reflecting surface at approximately 45.degree. to the plane of the active layer. The resonant cavity is formed between a cleaned end surface and a surface at the substrate. A hole through the substrate to the first confining layer is aligned with the reflecting surface for emission therethrough.
摘要翻译：双异质结构激光器在衬底上具有第一限制层，在第一限制层上具有活性层，在活性层上具有第二限制层。蚀刻通过第二限制层和有源层的沟槽，以在有源层的平面大约45°处形成反射表面。谐振腔形成在清洁的端表面和衬底表面之间。通过基板到第一限制层的孔与反射表面对准以通过其传射。

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