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1. 发明申请

US20160111451A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION SYSTEM 审中-公开
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US20160111451A1
公开(公告)日：2016-04-21
申请号：US14924100
申请日：2015-10-27
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Atsuo ISOBE , Shunpei YAMAZAKI , Koji DAIRIKI , Hiroshi SHIBATA , Chiho KOKUBO , Tatsuya ARAO , Masahiko HAYAKAWA , Hidekazu MIYAIRI , Akihisa SHIMOMURA , Koichiro TANAKA , Mai AKIBA
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
摘要翻译：提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流。在绝缘膜上形成矩形或条纹图案凹陷和突出部分。在绝缘膜上形成半导体膜。通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

2. 发明授权

US09178069B2 Semiconductor device and semiconductor device production system 有权
公开(公告)号：US09178069B2
公开(公告)日：2015-11-03
申请号：US12533401
申请日：2009-07-31
申请人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
发明人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
IPC分类号： H01L21/268 , H01L29/786 , H01L21/3213 , H01L21/02 , B23K26/073 , H01L21/20 , H01L21/84 , H01L29/66 , H01L27/12
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

3. 发明申请

US20070070346A1 Semiconductor device and semiconductor device production system 有权
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US20070070346A1
公开(公告)日：2007-03-29
申请号：US11600833
申请日：2006-11-17
申请人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
发明人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
IPC分类号： G01J3/30
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
摘要翻译：提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流。在绝缘膜上形成矩形或条纹图案凹陷和突出部分。在绝缘膜上形成半导体膜。通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

4. 发明授权

US07000636B2 Valve assemblies for use with a reactive precursor in semiconductor processing 失效
标题翻译：用于半导体加工中的反应性前体的阀组件
公开(公告)号：US07000636B2
公开(公告)日：2006-02-21
申请号：US10691769
申请日：2003-10-22
申请人： Ross S. Dando , Gurtej S. Sandhu , Allen P. Mardian
发明人： Ross S. Dando , Gurtej S. Sandhu , Allen P. Mardian
IPC分类号： F16K11/085
CPC分类号： C30B25/14 , C23C16/452 , C23C16/45536 , C23C16/45542 , C23C16/45544 , C23C16/45561 , C30B25/105 , Y10S118/90 , Y10T137/86839 , Y10T137/86863
摘要： The invention includes chemical vapor deposition methods, including atomic layer deposition, and valve assemblies for use with a reactive precursor in semiconductor processing. In one implementation, a chemical vapor deposition method includes positioning a semiconductor substrate within a chemical vapor deposition chamber. A first deposition precursor is fed to a remote plasma generation chamber positioned upstream of the deposition chamber, and a plasma is generated therefrom within the remote chamber and effective to form a first active deposition precursor species. The first species is flowed to the deposition chamber. During the flowing, flow of at least some of the first species is diverted from entering the deposition chamber while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. At some point, diverting is ceased while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. Other aspects and implementations are contemplated.
摘要翻译：本发明包括化学气相沉积方法，包括原子层沉积和用于半导体加工中的反应性前体的阀组件。在一个实施方案中，化学气相沉积方法包括将半导体衬底定位在化学气相沉积室内。第一沉积前体被供给到位于沉积室上游的远程等离子体产生室，并且在远程室内产生等离子体，并有效地形成第一活性沉积前体物质。第一种物质流入沉积室。在流动期间，至少一些第一物质的流动被转移进入沉积室，同时在远程室内馈送和保持第一沉积前体的等离子体产生。在某些时候，在远程室内进给和维持第一沉积前体的等离子体产生的同时停止转移。考虑了其他方面和实现。

5. 发明授权

US06935372B2 Semiconductor processing reactive precursor valve assembly 失效
标题翻译：半导体加工反应性前体阀组件
公开(公告)号：US06935372B2
公开(公告)日：2005-08-30
申请号：US11034015
申请日：2005-01-11
申请人： Ross S. Dando , Gurtej S. Sandhu , Allen P. Mardian
发明人： Ross S. Dando , Gurtej S. Sandhu , Allen P. Mardian
IPC分类号： C23C16/44 , C23C16/452 , C23C16/455 , C30B25/10 , C30B25/14 , F16K11/085
CPC分类号： C30B25/14 , C23C16/452 , C23C16/45536 , C23C16/45542 , C23C16/45544 , C23C16/45561 , C30B25/105 , Y10S118/90 , Y10T137/86839 , Y10T137/86863
摘要： The invention includes chemical vapor deposition methods, including atomic layer deposition, and valve assemblies for use with a reactive precursor in semiconductor processing. In one implementation, a chemical vapor deposition method includes positioning a semiconductor substrate within a chemical vapor deposition chamber. A first deposition precursor is fed to a remote plasma generation chamber positioned upstream of the deposition chamber, and a plasma is generated therefrom within the remote chamber and effective to form a first active deposition precursor species. The first species is flowed to the deposition chamber. During the flowing, flow of at least some of the first species is diverted from entering the deposition chamber while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. At some point, diverting is ceased while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. Other aspects and implementations are contemplated.
摘要翻译：本发明包括化学气相沉积方法，包括原子层沉积，以及用于半导体加工中的反应性前体的阀组件。在一个实施方案中，化学气相沉积方法包括将半导体衬底定位在化学气相沉积室内。第一沉积前体被供给到位于沉积室上游的远程等离子体产生室，并且在远程室内产生等离子体，并有效地形成第一活性沉积前体物质。第一种物质流入沉积室。在流动期间，至少一些第一物质的流动被转移进入沉积室，同时在远程室内馈送和保持第一沉积前体的等离子体产生。在某些时候，在远程室内进给和维持第一沉积前体的等离子体产生的同时停止转移。考虑了其他方面和实现。

6. 发明授权

US06841797B2 Semiconductor device formed over a surface with a drepession portion and a projection portion 有权
标题翻译：半导体器件形成在具有凹陷部分和突出部分的表面上
公开(公告)号：US06841797B2
公开(公告)日：2005-01-11
申请号：US10338043
申请日：2003-01-08
申请人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
发明人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L31/36
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
摘要翻译：提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流。在绝缘膜上形成矩形或条纹图案凹陷和突出部分。在绝缘膜上形成半导体膜。通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

7. 发明申请

US20030218169A1 Semiconductor device and semiconductor device production system 有权
公开(公告)号：US20030218169A1
公开(公告)日：2003-11-27
申请号：US10338043
申请日：2003-01-08
发明人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
IPC分类号： H01L031/036 , H01L021/84
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

8. 发明授权

US5372649A Apparatus for weighting a diffusion furnace cantilever 失效
标题翻译：用于对扩散炉悬臂加权的装置
公开(公告)号：US5372649A
公开(公告)日：1994-12-13
申请号：US113521
申请日：1993-08-30
申请人： Jon A. Gwin
发明人： Jon A. Gwin
IPC分类号： H01L21/677 , B05C13/02
CPC分类号： H01L21/67754 , H01L21/67712 , H01L21/6776 , Y10S118/90
摘要： Apparatus for counterweighting a diffusion furnace cantilever arm for processing silicon wafers which has conventional slotted quartz boats for receiving silicon wafers wherein certain substitutes for said conventional quartz boats are constructed so as to be dummy loads which have the weight and dimensions of a filled quartz boat, but in which no silicon wafers are mounted. Other quartz boats have slots for a particular number of silicon wafers, but the remaining portion of the boat does not receive any wafers, and the boat has the weight and dimensions equivalent to a filled quartz boat. By combining the various boats on the cantilever arm a standard weight can be obtained.
摘要翻译：用于对称加权用于处理硅晶片的扩散炉悬臂的装置，其具有用于接收硅晶片的常规开槽石英舟，其中用于所述常规石英舟的某些替代物被构造成具有填充的石英舟的重量和尺寸的虚拟负载，但是其中没有安装硅晶片。其他石英舟具有用于特定数量的硅晶片的槽，但是船的剩余部分不接收任何晶片，并且船的重量和尺寸等同于填充的石英舟。通过组合悬臂上的各种船，可以获得标准重量。

9. 发明授权

US4723507A Isolation passageway including annular region 失效
标题翻译：隔离通道包括环形区域
公开(公告)号：US4723507A
公开(公告)日：1988-02-09
申请号：US819435
申请日：1986-01-16
申请人： Herbert L. Ovshinsky , David A. Gattuso
发明人： Herbert L. Ovshinsky , David A. Gattuso
IPC分类号： C23C16/54 , H01L21/00 , C23C16/50
CPC分类号： H01L21/67236 , C23C16/545 , H01L21/67017 , H01L21/67126 , H01L21/67207 , Y10S118/90
摘要： A passageway which includes an annular region, the passageway adapted to isolate the gaseous contents of one of a pair of adjacent, vacuumized environments from the other of the pair while providing for the movement of a substrate therebetween.
摘要翻译：包括环形区域的通道，所述通道适于将一对相邻的真空环境中的一个的气态物质与所述一对中的另一个隔离，同时提供其间的基板的移动。

10. 发明授权

US4493287A Diffusion equipment 失效
标题翻译：扩散设备
公开(公告)号：US4493287A
公开(公告)日：1985-01-15
申请号：US446441
申请日：1982-12-03
申请人： Anthony J. Springthorpe
发明人： Anthony J. Springthorpe
IPC分类号： C30B31/10 , C23C13/08
CPC分类号： C30B31/103 , Y10S118/90
摘要： To secure accurate control over rapid diffusion such as the diffusion of zinc into gallium arsenide, the source and slices to be processed are isolated from one another during an initial warm-up period. This is done using one vessel for the crystal slice and a second vessel for the source. The source vessel initially blocks an opening in the slice vessel while the source and slice are brought to the desired diffusion temperature. The source vessel is then slid through the opening to a diffusing position in which a trailing part of the source vessel again plugs the opening in the slice vessel and in which an open part of the source vessel is now in the interior of the slice vessel. Use of this arrangement avoids the uncontrolled diffusion which occurs in current diffusion capsules during initial heating of the capsule.
摘要翻译：为了确保对快速扩散的准确控制，例如锌向砷化镓的扩散，待加工的源和切片在初始预热期间彼此隔离。这是使用一个用于晶体切片的容器和用于源的第二容器来完成的。源容器首先阻挡切片容器中的开口，同时使源和切片达到期望的扩散温度。然后将源容器滑动通过开口到扩散位置，在该扩散位置，源容器的尾部再次插入切片容器中的开口，并且源容器的开放部分现在处于切片容器的内部。使用这种布置避免了在胶囊的初始加热期间在当前扩散胶囊中发生的不受控制的扩散。

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