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1. 发明授权

US08058681B2 Nonvolatile semiconductor memory element, nonvolatile semiconductor memory, and method for operating nonvolatile semiconductor memory element 有权
标题翻译：非易失性半导体存储元件，非易失性半导体存储器以及用于操作非易失性半导体存储元件
公开(公告)号：US08058681B2
公开(公告)日：2011-11-15
申请号：US12405626
申请日：2009-03-17
申请人： Masao Shingu , Jun Fujiki , Naoki Yasuda , Koichi Muraoka
发明人： Masao Shingu , Jun Fujiki , Naoki Yasuda , Koichi Muraoka
IPC分类号： H01L29/792
CPC分类号： H01L29/7883 , G11C11/40 , G11C16/0408 , G11C16/0466 , G11C16/10 , G11C16/12 , G11C16/14 , G11C16/26 , H01L21/28282 , H01L27/11521 , H01L27/11556 , H01L27/11582 , H01L29/4234 , H01L29/495 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/788 , H01L29/792
摘要： According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film.
摘要翻译：根据本发明的一个方面，提供了一种非易失性半导体存储元件，包括：半导体衬底，包括：源极区; 漏区; 和通道区域; 形成在沟道区上的下绝缘膜; 电荷存储膜，形成在下绝缘膜上并存储数据; 形成在电荷存储膜上的上绝缘膜; 以及形成在所述上绝缘膜上的控制栅极，其中所述上绝缘膜包括：第一绝缘膜; 以及与所述第一绝缘膜层压的第二绝缘膜，并且其中所述第一绝缘膜形成为具有比所述第二绝缘膜的陷阱级密度大的陷阱级密度。

2. 发明授权

US07943981B2 Semiconductor memory element 有权
标题翻译：半导体存储元件
公开(公告)号：US07943981B2
公开(公告)日：2011-05-17
申请号：US12233073
申请日：2008-09-18
申请人： Tsunehiro Ino , Naoki Yasuda , Koichi Muraoka , Jun Fujiki , Shoko Kikuchi , Keiko Ariyoshi
发明人： Tsunehiro Ino , Naoki Yasuda , Koichi Muraoka , Jun Fujiki , Shoko Kikuchi , Keiko Ariyoshi
IPC分类号： H01L29/788
CPC分类号： H01L29/792 , H01L29/42348 , H01L29/513 , H01L29/518
摘要： A semiconductor memory element includes: a tunnel insulating film formed on a semiconductor substrate; a HfON charge storage film with Bevan clusters formed on the tunnel insulating film; a blocking film formed on the HfON charge storage film; and a gate electrode formed on the blocking film.
摘要翻译：半导体存储元件包括：形成在半导体衬底上的隧道绝缘膜; 在隧道绝缘膜上形成具有Bevan簇的HfON电荷存储膜; 形成在HfON电荷存储膜上的阻挡膜; 以及形成在阻挡膜上的栅电极。

3. 发明申请

US20120032248A1 NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY, AND METHOD FOR OPERATING NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT 有权
标题翻译：非易失性半导体存储器元件，非易失性半导体存储器以及用于操作非易失性半导体存储器元件的方法
公开(公告)号：US20120032248A1
公开(公告)日：2012-02-09
申请号：US13272821
申请日：2011-10-13
申请人： Masao SHINGU , Jun Fujiki , Naoki Yasuda , Koichi Muraoka
发明人： Masao SHINGU , Jun Fujiki , Naoki Yasuda , Koichi Muraoka
IPC分类号： H01L29/792 , H01L29/788
CPC分类号： H01L29/7883 , G11C11/40 , G11C16/0408 , G11C16/0466 , G11C16/10 , G11C16/12 , G11C16/14 , G11C16/26 , H01L21/28282 , H01L27/11521 , H01L27/11556 , H01L27/11582 , H01L29/4234 , H01L29/495 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/788 , H01L29/792
摘要： According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film.
摘要翻译：根据本发明的一个方面，提供了一种非易失性半导体存储元件，包括：半导体衬底，包括：源极区; 漏区; 和通道区域; 形成在沟道区上的下绝缘膜; 电荷存储膜，形成在下绝缘膜上并存储数据; 形成在电荷存储膜上的上绝缘膜; 以及形成在所述上绝缘膜上的控制栅极，其中所述上绝缘膜包括：第一绝缘膜; 以及与所述第一绝缘膜层压的第二绝缘膜，并且其中所述第一绝缘膜形成为具有比所述第二绝缘膜的陷阱级密度大的陷阱级密度。

4. 发明授权

US07885106B2 Nonvolatile semiconductor memory device and method for driving same 失效
标题翻译：非易失性半导体存储器件及其驱动方法
公开(公告)号：US07885106B2
公开(公告)日：2011-02-08
申请号：US12411746
申请日：2009-03-26
申请人： Jun Fujiki , Koichi Muraoka , Naoki Yasuda
发明人： Jun Fujiki , Koichi Muraoka , Naoki Yasuda
IPC分类号： G11C16/04 , G11C29/792 , G11C5/14 , G11C11/34
CPC分类号： G11C16/26 , G11C11/5671 , G11C16/0466 , G11C16/0483 , G11C16/10 , H01L27/11565 , H01L27/11568
摘要： A nonvolatile semiconductor memory device includes: a semiconductor substrate including a first channel, and a source region and a drain region provided on both sides of the first channel; a first insulating film provided on the first channel; a charge retention layer provided on the first insulating film; a second insulating film provided on the charge retention layer; and a semiconductor layer including a second channel provided on the second insulating film, and a source region and a drain region provided on both sides of the second channel.
摘要翻译：非易失性半导体存储器件包括：包括第一沟道的半导体衬底和设置在第一沟道两侧的源极区和漏极区; 设置在第一通道上的第一绝缘膜; 设置在所述第一绝缘膜上的电荷保持层; 设置在电荷保持层上的第二绝缘膜; 以及包括设置在第二绝缘膜上的第二通道的半导体层，以及设置在第二通道两侧的源极区域和漏极区域。

5. 发明申请

US20100080062A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING SAME 失效
标题翻译：非易失性半导体存储器件及其驱动方法
公开(公告)号：US20100080062A1
公开(公告)日：2010-04-01
申请号：US12411746
申请日：2009-03-26
申请人： Jun Fujiki , Koichi Muraoka , Naoki Yasuda
发明人： Jun Fujiki , Koichi Muraoka , Naoki Yasuda
IPC分类号： G11C16/04 , H01L29/792 , G11C5/14 , G11C11/34
CPC分类号： G11C16/26 , G11C11/5671 , G11C16/0466 , G11C16/0483 , G11C16/10 , H01L27/11565 , H01L27/11568
摘要： A nonvolatile semiconductor memory device includes: a semiconductor substrate including a first channel, and a source region and a drain region provided on both sides of the first channel; a first insulating film provided on the first channel; a charge retention layer provided on the first insulating film; a second insulating film provided on the charge retention layer; and a semiconductor layer including a second channel provided on the second insulating film, and a source region and a drain region provided on both sides of the second channel.
摘要翻译：非易失性半导体存储器件包括：包括第一沟道的半导体衬底和设置在第一沟道两侧的源极区和漏极区; 设置在第一通道上的第一绝缘膜; 设置在所述第一绝缘膜上的电荷保持层; 设置在电荷保持层上的第二绝缘膜; 以及包括设置在第二绝缘膜上的第二通道的半导体层，以及设置在第二通道两侧的源极区域和漏极区域。

6. 发明申请

US20100078704A1 SEMICONDUCTOR STORAGE ELEMENT AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体存储元件及其制造方法
公开(公告)号：US20100078704A1
公开(公告)日：2010-04-01
申请号：US12404648
申请日：2009-03-16
申请人： Tsunehiro Ino , Shosuke Fujii , Jun Fujiki , Akira Takashima , Masao Shingu , Daisuke Matsushita , Naoki Yasuda , Koichi Muraoka
发明人： Tsunehiro Ino , Shosuke Fujii , Jun Fujiki , Akira Takashima , Masao Shingu , Daisuke Matsushita , Naoki Yasuda , Koichi Muraoka
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L29/792 , H01L29/517 , H01L29/66833
摘要： A semiconductor storage element includes: a source region and a drain region provided in a semiconductor substrate; a tunnel insulating film provided on the semiconductor substrate between the source region and the drain region; a charge storage film provided on the tunnel insulating film; a block insulating film provided on the charge storage film; a gate electrode provided on the block insulating film; and a region containing a gas molecule, the region provided in a neighborhood of an interface between the charge storage film and the block insulating film.
摘要翻译：半导体存储元件包括：设置在半导体衬底中的源极区域和漏极区域; 设置在所述源极区域和所述漏极区域之间的所述半导体衬底上的隧道绝缘膜; 设置在所述隧道绝缘膜上的电荷存储膜; 设置在电荷存储膜上的块状绝缘膜; 设置在所述块绝缘膜上的栅电极; 以及包含气体分子的区域，所述区域设置在电荷存储膜和块绝缘膜之间的界面附近。

7. 发明授权

US08294195B2 Nonvolatile semiconductor memory element, nonvolatile semiconductor memory, and method for operating nonvolatile semiconductor memory element 有权
标题翻译：非易失性半导体存储元件，非易失性半导体存储器以及用于操作非易失性半导体存储元件的方法
公开(公告)号：US08294195B2
公开(公告)日：2012-10-23
申请号：US13272821
申请日：2011-10-13
申请人： Masao Shingu , Jun Fujiki , Naoki Yasuda , Koichi Muraoka
发明人： Masao Shingu , Jun Fujiki , Naoki Yasuda , Koichi Muraoka
IPC分类号： H01L29/788
CPC分类号： H01L29/7883 , G11C11/40 , G11C16/0408 , G11C16/0466 , G11C16/10 , G11C16/12 , G11C16/14 , G11C16/26 , H01L21/28282 , H01L27/11521 , H01L27/11556 , H01L27/11582 , H01L29/4234 , H01L29/495 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/788 , H01L29/792
摘要： According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film.
摘要翻译：根据本发明的一个方面，提供了一种非易失性半导体存储元件，包括：半导体衬底，包括：源极区; 漏区; 和通道区域; 形成在沟道区上的下绝缘膜; 电荷存储膜，形成在下绝缘膜上并存储数据; 形成在电荷存储膜上的上绝缘膜; 以及形成在所述上绝缘膜上的控制栅极，其中所述上绝缘膜包括：第一绝缘膜; 以及与所述第一绝缘膜层压的第二绝缘膜，并且其中所述第一绝缘膜形成为具有比所述第二绝缘膜的陷阱级密度大的陷阱级密度。

8. 发明申请

US20120069679A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING SAME 有权
标题翻译：非易失性半导体存储器件及其驱动方法
公开(公告)号：US20120069679A1
公开(公告)日：2012-03-22
申请号：US13239964
申请日：2011-09-22
申请人： Jun FUJIKI , Naoki Yasuda , Koichi Muraoka
发明人： Jun FUJIKI , Naoki Yasuda , Koichi Muraoka
IPC分类号： G11C16/06
CPC分类号： G11C16/26 , G11C16/3454 , G11C16/3459
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a memory string including a plurality of memory cells and, a driving unit. In sequentially reading data stored in the memory cells by applying a first signal to the memory cells, a second signal is applied to a second cell. The driving unit applies a third signal to the gate electrodes of all the memory cells prior to the sequential reading. The third signal has a voltage smaller than the second signal and time duration equal to or more than that of a sum of time duration during which the first signal is applied to all the memory cells. In a period prior to the third signal application, the driving unit performs at least one of applying a fourth signal to the gate electrodes and matching a potential of the gate electrodes with that of the semiconductor layer.
摘要翻译：根据一个实施例，非易失性半导体存储器件包括包括多个存储单元的存储器串和驱动单元。通过向存储单元施加第一信号来顺序读取存储在存储单元中的数据，第二信号被施加到第二单元。驱动单元在顺序读取之前将所有存储单元的栅电极施加第三信号。第三信号的电压小于第二信号，并且持续时间等于或大于将第一信号施加到所有存储器单元的持续时间之和的电平。在第三信号施加之前的时段中，驱动单元执行将第四信号施加到栅电极并使栅电极的电位与半导体层的电位相匹配中的至少一个。

9. 发明申请

US20100080065A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING THE SAME 失效
标题翻译：非易失性半导体存储器件及其驱动方法
公开(公告)号：US20100080065A1
公开(公告)日：2010-04-01
申请号：US12496064
申请日：2009-07-01
申请人： Jun FUJIKI , Koichi Muraoka , Naoki Yasuda
发明人： Jun FUJIKI , Koichi Muraoka , Naoki Yasuda
IPC分类号： G11C16/04 , H01L29/792
CPC分类号： H01L29/7881 , G11C16/0466 , H01L27/11521 , H01L27/11568 , H01L29/792
摘要： A nonvolatile semiconductor memory device includes a memory cell and a driving unit. The a memory cell has a semiconductor layer having, a channel, and a source region and a drain region provided on both sides of the channel; a first insulating film provided on the channel; a charge retention layer provided on the first insulating film; and a gate electrode provided on the charge retention layer. The driving unit applies a burst signal having a constant amplitude and a constant frequency between the gate electrode and the semiconductor layer and performs at least one of operations of programming and erasing charge on the charge retention layer.
摘要翻译：非易失性半导体存储器件包括存储单元和驱动单元。存储单元具有半导体层，具有设置在沟道两侧的沟道以及源极区和漏极区; 设置在所述通道上的第一绝缘膜; 设置在所述第一绝缘膜上的电荷保持层; 以及设置在电荷保持层上的栅电极。驱动单元在栅电极和半导体层之间施加具有恒定幅度和恒定频率的突发信号，并执行对电荷保持层进行编程和擦除电荷的操作中的至少一种。

10. 发明申请

US20100034023A1 NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY, AND METHOD FOR OPERATING NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT 有权
标题翻译：非易失性半导体存储器元件，非易失性半导体存储器以及用于操作非易失性半导体存储器元件的方法
公开(公告)号：US20100034023A1
公开(公告)日：2010-02-11
申请号：US12405626
申请日：2009-03-17
申请人： Masao SHINGU , Jun Fujiki , Naoki Yasuda , Koichi Muraoka
发明人： Masao SHINGU , Jun Fujiki , Naoki Yasuda , Koichi Muraoka
IPC分类号： G11C16/04 , H01L29/792
CPC分类号： H01L29/7883 , G11C11/40 , G11C16/0408 , G11C16/0466 , G11C16/10 , G11C16/12 , G11C16/14 , G11C16/26 , H01L21/28282 , H01L27/11521 , H01L27/11556 , H01L27/11582 , H01L29/4234 , H01L29/495 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/788 , H01L29/792
摘要： According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film.
摘要翻译：根据本发明的一个方面，提供了一种非易失性半导体存储元件，包括：半导体衬底，包括：源极区; 漏区; 和通道区域; 形成在沟道区上的下绝缘膜; 电荷存储膜，形成在下绝缘膜上并存储数据; 形成在电荷存储膜上的上绝缘膜; 以及形成在所述上绝缘膜上的控制栅极，其中所述上绝缘膜包括：第一绝缘膜; 以及与所述第一绝缘膜层压的第二绝缘膜，并且其中所述第一绝缘膜形成为具有比所述第二绝缘膜的陷阱级密度大的陷阱级密度。

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