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    • 1. 发明授权
    • Memory element using active layer of blended materials
    • 记忆元素使用有源层的混合材料
    • US07378682B2
    • 2008-05-27
    • US11052688
    • 2005-02-07
    • David GaunSwaroop KazaStuart SpitzerJuri KriegerRichard Kingsborough
    • David GaunSwaroop KazaStuart SpitzerJuri KriegerRichard Kingsborough
    • H01L51/00
    • H01L27/285B82Y10/00G11C13/0014G11C13/0016
    • The present memory device has first and second electrodes, a passive layer between the first and second electrodes and on and in contact with the first electrode, and an active layer between the first and second electrodes and on and in contact with the passive layer and second electrode, for receiving a charged specie from the passive layer. The active layer is a mixture of (i) a first polymer, and (ii) a second polymer for enhancing ion transport, improving the interface and promoting a rapid and substantially uniform distribution of the charged specie in the active layer, i.e., preventing a localized injection of the charged species. These features result in a memory element with improved stability, a more controllable ON-state resistance, improved switching speed and a lower programming voltage.
    • 本存储器件具有第一和第二电极,在第一和第二电极之间并且与第一电极接触并且与第一电极接触的无源层以及在第一和第二电极之间并且与被动层和第二电极接触的有源层 电极,用于从被动层接收带电物质。 活性层是(i)第一聚合物和(ii)用于增强离子迁移的第二聚合物的混合物,改善界面并促进活性层中带电物质的快速且基本上均匀的分布,即防止 局部注射带电物种。 这些特征导致存储元件具有改进的稳定性,更可控的导通电阻,改进的开关速度和较低的编程电压。