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    • 10. 发明申请
    • Semiconductor integrated circuit device and fabrication method thereof
    • 半导体集成电路器件及其制造方法
    • US20090044162A1
    • 2009-02-12
    • US12285073
    • 2008-09-29
    • Keiichi Yoshioka
    • Keiichi Yoshioka
    • G06F17/50
    • G06F17/5068H01L27/11803H01L27/1203
    • A semiconductor integrated circuit device and a fabrication method thereof are disclosed, for effective suppression of a temperature increase therein that is caused by heat generation of a semiconductor element. The semiconductor integrated circuit device includes a semiconductor element, a multi-layer wiring structure and a heat conduction part. The semiconductor element is formed on a support substrate. The multi-layer wiring structure is formed in an insulation film on the support substrate and includes at least one connection hole and at least one metal wiring layer. The heat conduction part is formed of the same conductive materials as the connection hole and the metal wiring layer and extends toward an upper layer side along a path different from a wiring path including a connection hole and a metal wiring for signal transmission.
    • 公开了一种半导体集成电路器件及其制造方法,用于有效抑制由半导体元件的发热引起的温度升高。 半导体集成电路器件包括半导体元件,多层布线结构和导热部分。 半导体元件形成在支撑基板上。 多层布线结构形成在支撑基板上的绝缘膜中,并且包括至少一个连接孔和至少一个金属布线层。 导热部分由与连接孔和金属布线层相同的导电材料形成,并且沿着与包括连接孔和用于信号传输的金属布线的布线路径不同的路径向上层侧延伸。