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    • 6. 发明授权
    • Method for manufacturing a combination of a pressure sensor and an
electrochemical sensor
    • 用于制造压力传感器和电化学传感器的组合的方法
    • US5918110A
    • 1999-06-29
    • US866414
    • 1997-05-30
    • Klaus Abraham-FuchsWalter GumbrechtChristofer HieroldThomas Scheiter
    • Klaus Abraham-FuchsWalter GumbrechtChristofer HieroldThomas Scheiter
    • G01L9/12G01L9/00G01L19/00G01N27/414G01N27/416H01L29/84H01L49/00
    • G01L19/0092G01L9/0073G01N27/4148
    • In a method for manufacturing a combination of a pressure sensor and an electrochemical sensor, a basic structure for an ISFET is manufactured on a substrate made of silicon. After depositing a nitride layer as a pH-sensitive layer, the region of the ISFET is covered with a protective layer. In a region provided for a pressure sensor, a structured layer of polysilicon, provided as a membrane, is manufactured above a hollow space. Additional method steps for manufacturing electrical terminals of the sensors and, if required, additional integrated components, and for manufacturing printed conductor planes, are carried out in the context of a CMOS process. IMOX layers in the region of the gas sensor are wet-chemically removed down to the nitride layer. A platinum contact and an additional protective layer made of a PECVD oxide and a PECVD nitride are deposited. Additional layer structures for the gas sensor are manufactured. The pressure sensor is etched free either before the gas sensor is etched free, or after the deposition of the additional protective layer.
    • 在用于制造压力传感器和电化学传感器的组合的方法中,在由硅制成的基板上制造用于ISFET的基本结构。 在沉积氮化物层作为pH敏感层之后,ISFET的区域被保护层覆盖。 在为压力传感器提供的区域中,在中空空间之上制造作为膜设置的多晶硅结构化层。 在CMOS工艺的上下文中执行用于制造传感器的电端子以及如果需要的附加的集成部件以及制造印刷导体平面的附加方法步骤。 在气体传感器区域中的IMOX层被湿法化学去除到氮化物层。 沉积由PECVD氧化物和PECVD氮化物制成的铂接触和附加保护层。 制造用于气体传感器的附加层结构。 在气体传感器被自由蚀刻之前或在沉积附加保护层之后,压力传感器被蚀刻。