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1. 发明授权

US06551479B1 Apparatus for controlling and/or measuring additive concentration in an electroplating bath 有权
公开(公告)号：US06551479B1
公开(公告)日：2003-04-22
申请号：US09572603
申请日：2000-05-17
申请人： Lyndon W. Graham , Thomas C. Taylor , Thomas L. Ritzdorf , Fredrick A. Lindberg , Bradley C. Carpenter
发明人： Lyndon W. Graham , Thomas C. Taylor , Thomas L. Ritzdorf , Fredrick A. Lindberg , Bradley C. Carpenter
IPC分类号： G01N2748
CPC分类号： G01N27/48 , G01N27/4161
摘要： A method for measuring a target constituent of an electroplating solution using an electroanalytical technique is set forth in which the electroplating solution includes one or more constituents whose by-products skew an initial electrical response to an energy input of the electroanalytical technique. The method comprises a first step in which an electroanalytical measurement cycle of the target constituent is initiated by providing an energy input to a pair of electrodes disposed in the electroplating solution. The energy input to the pair of electrodes is provided for at least a predetermined time period corresponding to a time period in which the electroanalytical measurement cycle reaches a steady-state condition. In a subsequent step, an electroanalytical measurement of the energy output of the electroanalytical technique is taken after the electroanalytical measurement cycle has reached the steady-state condition. The electroanalytical measurement is then used to determine an amount of the target constituent in the electroplating solution. An automatic dosing system that includes the foregoing method and/or one or more known electroanalytical techniques in a close-loop system is also set forth.

2. 发明授权

US06365033B1 Methods for controlling and/or measuring additive concentration in an electroplating bath 有权
标题翻译：用于控制和/或测量电镀浴中的添加剂浓度的方法
公开(公告)号：US06365033B1
公开(公告)日：2002-04-02
申请号：US09387084
申请日：1999-08-31
申请人： Lyndon W. Graham , Thomas C. Taylor , Thomas L. Ritzdorf , Fredrick A. Lindberg , Bradley C. Carpenter
发明人： Lyndon W. Graham , Thomas C. Taylor , Thomas L. Ritzdorf , Fredrick A. Lindberg , Bradley C. Carpenter
IPC分类号： G01N2748
CPC分类号： G01N27/48 , G01N27/4161
摘要： A method for measuring a target constituent of an electroplating solution using an electroanalytical technique is set forth in which the electroplating solution includes one or more constituents whose by-products skew an initial electrical response to an energy input of the electroanalytical technique. The method comprises a first step in which an electroanalytical measurement cycle of the target constituent is initiated by providing an energy input to a pair of electrodes disposed in the electroplating solution. The energy input to the pair of electrodes is provided for at least a predetermined time period corresponding to a time period in which the electroanalytical measurement cycle reaches a steady-state condition. In a subsequent step, an electroanalytical measurement of the energy output of the electroanalytical technique is taken after the electroanalytical measurement cycle has reached the steady-state condition. The electroanalytical measurement is then used to determine an amount of the target constituent in the electroplating solution. An automatic dosing system that includes the foregoing method and/or one or more known electroanalytical techniques in a close-loop system is also set forth.
摘要翻译：提出了一种使用电分析技术测量电镀溶液的目标成分的方法，其中电镀溶液包括一种或多种成分，其中副产物偏置对电分析技术的能量输入的初始电响应。该方法包括第一步骤，其中通过向布置在电镀溶液中的一对电极提供能量输入来启动目标成分的电分析测量循环。输入到该对电极的能量被提供至少一个对应于电分析测量周期达到稳态条件的时间段的预定时间段。在随后的步骤中，在电分析测量循环达到稳态条件之后，进行电分析技术的能量输出的电分析测量。然后使用电分析测量来确定电镀溶液中的目标成分的量。还提出了一种包括前述方法和/或闭环系统中的一种或多种已知电分析技术的自动计量系统。

3. 发明授权

US07229543B2 Apparatus for controlling and/or measuring additive concentration in an electroplating bath 有权
标题翻译：用于控制和/或测量电镀浴中的添加剂浓度的装置
公开(公告)号：US07229543B2
公开(公告)日：2007-06-12
申请号：US10372955
申请日：2003-02-26
申请人： Lyndon W. Graham , Thomas C. Taylor , Thomas L. Ritzdorf , Fredrick A. Lindberg , Bradley C. Carpenter
发明人： Lyndon W. Graham , Thomas C. Taylor , Thomas L. Ritzdorf , Fredrick A. Lindberg , Bradley C. Carpenter
IPC分类号： C25D21/12 , G01F1/64 , G01N27/26 , G01N27/42
CPC分类号： G01N27/48 , G01N27/4161
摘要： A method for measuring a target constituent of an electroplating solution using an electroanalytical technique is set forth in which the electroplating solution includes one or more constituents whose by-products skew an initial electrical response to an energy input of the electroanalytical technique. The method comprises a first step in which an electroanalytical measurement cycle of the target constituent is initiated by providing an energy input to a pair of electrodes disposed in the electroplating solution. The energy input to the pair of electrodes is provided for at least a predetermined time period corresponding to a time period in which the electroanalytical measurement cycle reaches a steady-state condition. In a subsequent step, an electroanalytical measurement of the energy output of the electroanalytical technique is taken after the electroanalytical measurement cycle has reached the steady-state condition. The electroanalytical measurement is then used to determine an amount of the target constituent in the electroplating solution. An automatic dosing system that includes the foregoing method and/or one or more known electroanalytical techniques in a close-loop system is also set forth.
摘要翻译：提出了一种使用电分析技术测量电镀溶液的目标成分的方法，其中电镀溶液包括一种或多种成分，其中副产物偏置对电分析技术的能量输入的初始电响应。该方法包括第一步骤，其中通过向布置在电镀溶液中的一对电极提供能量输入来启动目标成分的电分析测量循环。输入到该对电极的能量被提供至少一个对应于电分析测量周期达到稳态条件的时间段的预定时间段。在随后的步骤中，在电分析测量循环达到稳态条件之后，进行电分析技术的能量输出的电分析测量。然后使用电分析测量来确定电镀溶液中的目标成分的量。还提出了一种包括前述方法和/或闭环系统中的一种或多种已知电分析技术的自动计量系统。

4. 再颁专利

USRE38931E1 Methods for controlling and/or measuring additive concentration in an electroplating bath 有权
标题翻译：用于控制和/或测量电镀浴中的添加剂浓度的方法
公开(公告)号：USRE38931E1
公开(公告)日：2006-01-10
申请号：US10266966
申请日：2003-02-27
申请人： Lyndon W. Graham , Thomas C. Taylor , Thomas L. Ritzdorf , Fredrick A. Lindberg , Bradley C. Carpenter
发明人： Lyndon W. Graham , Thomas C. Taylor , Thomas L. Ritzdorf , Fredrick A. Lindberg , Bradley C. Carpenter
IPC分类号： G01N27/48
CPC分类号： G01N27/4161 , G01N27/48
摘要： A method for measuring a target constituent of an electroplating solution using an electroanalytical technique is set forth in which the electroplating solution includes one or more constituents whose by-products skew an initial electrical response to an energy input of the electroanalytical technique. The method comprises a first step in which an electroanalytical measurement cycle of the target constituent is initiated by providing an energy input to a pair of electrodes disposed in the electroplating solution. The energy input to the pair of electrodes is provided for at least a predetermined time period corresponding to a time period in which the electroanalytical measurement cycle reaches a steady-state condition. In a subsequent step, an electroanalytical measurement of the energy output of the electroanalytical technique is taken after the electroanalytical measurement cycle has reached the steady-state condition. The electroanalytical measurement is then used to determine an amount of the target constituent in the electroplating solution. An automatic dosing system that includes the foregoing method and/or one or more known electroanalytical techniques in a close closed-loop system is also set forth.
摘要翻译：提出了一种使用电分析技术测量电镀溶液的目标成分的方法，其中电镀溶液包括一种或多种成分，其中副产物偏置对电分析技术的能量输入的初始电响应。该方法包括第一步骤，其中通过向布置在电镀溶液中的一对电极提供能量输入来启动目标成分的电分析测量循环。输入到该对电极的能量被提供至少一个对应于电分析测量周期达到稳态条件的时间段的预定时间段。在随后的步骤中，在电分析测量循环达到稳态条件之后，进行电分析技术的能量输出的电分析测量。然后使用电分析测量来确定电镀溶液中的目标成分的量。在<？delete-start id =“DEL-S-00001”date =“20060110”→> close <？delete-end id =“中包括上述方法和/或一个或多个已知的电分析技术的自动计量系统 DEL-S-00001“？> <？insert-start id =”INS-S-00001“date =”20060110“？> closed <？insert-end id =”INS-S-00001“？也阐述了。

5. 发明授权

US06921468B2 Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations 失效
标题翻译：具有辅助电极的电镀系统，用于主反应室外部用于接触清洁操作
公开(公告)号：US06921468B2
公开(公告)日：2005-07-26
申请号：US09910481
申请日：2001-07-19
申请人： Lyndon W. Graham , Kyle Hanson , Thomas L. Ritzdorf , Jeffrey I. Turner
发明人： Lyndon W. Graham , Kyle Hanson , Thomas L. Ritzdorf , Jeffrey I. Turner
IPC分类号： C25D5/08 , C25D7/12 , H01L21/00 , C25D17/00
CPC分类号： H01L21/67126 , C25D5/08 , C25D17/001
摘要： A system for electroplating a semiconductor wafer is set forth. The system comprises a first electrode in electrical contact with the semiconductor wafer and a second electrode. The first electrode and the semiconductor wafer form a cathode during electroplating of the semiconductor wafer. The second electrode forms an anode during electroplating of the semiconductor wafer. A reaction container defining a reaction chamber is also employed. The reaction chamber comprises an electrically conductive plating solution. At least a portion of each of the first electrode, the second electrode, and the semiconductor wafer contact the plating solution during electroplating of the semiconductor wafer. An auxiliary electrode is disposed exterior to the reaction chamber and positioned for contact with plating solution exiting the reaction chamber during cleaning of the first electrode to thereby provide an electrically conductive path between the auxiliary electrode and the first electrode. A power supply system is connected to supply plating power to the first and second electrodes during electroplating of the semiconductor wafer and is further connected to render the first electrode an anode and the auxiliary electrode a cathode during cleaning of the first electrode.
摘要翻译：阐述了一种用于电镀半导体晶片的系统。该系统包括与半导体晶片电接触的第一电极和第二电极。第一电极和半导体晶片在半导体晶片的电镀期间形成阴极。第二电极在电镀半导体晶片期间形成阳极。还使用限定反应室的反应容器。反应室包括导电电镀液。在半导体晶片的电镀期间，第一电极，第二电极和半导体晶片中的每一个的至少一部分与镀液接触。辅助电极设置在反应室的外部，并且定位成在清洁第一电极期间与离开反应室的电镀液接触，从而在辅助电极和第一电极之间提供导电路径。电源系统被连接以在半导体晶片的电镀期间向第一和第二电极提供电镀电力，并且在第一电极的清洁期间进一步连接以使第一电极为阳极，辅助电极为阴极。

6. 发明授权

US06599412B1 In-situ cleaning processes for semiconductor electroplating electrodes 失效
标题翻译：半导体电镀电极的原位清洗工艺
公开(公告)号：US06599412B1
公开(公告)日：2003-07-29
申请号：US08940670
申请日：1997-09-30
申请人： Lyndon W. Graham , Thomas L. Ritzdorf , Jeffrey I. Turner
发明人： Lyndon W. Graham , Thomas L. Ritzdorf , Jeffrey I. Turner
IPC分类号： C25D2100
CPC分类号： H01L21/67751 , C25D5/08 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/08 , H01L21/67126
摘要： Methods and apparatuses for in-situ cleaning of semiconductor electroplating electrodes to remove plating metal without requiring !the manual removal of the electrodes from the semiconductor plating equipment. The electrode is placed into the plating liquid and, an electrical current having reverse polarity is passed between the electrode and plating liquid. Plating deposits which have accumulated on the electrode are electrochemically dissolved and removed from the electrode.
摘要翻译：用于半导体电镀电极的原位清洁以去除电镀金属的方法和装置，而不需要从半导体电镀设备手动去除电极。将电极放置在电镀液中，并且具有相反极性的电流在电极和电镀液之间通过。积聚在电极上的电镀沉积物电化学溶解并从电极中去除。

7. 发明授权

US06508920B1 Apparatus for low-temperature annealing of metallization microstructures in the production of a microelectronic device 失效
标题翻译：用于微电子器件生产中金属化微结构的低温退火的装置
公开(公告)号：US06508920B1
公开(公告)日：2003-01-21
申请号：US09387577
申请日：1999-08-31
申请人： Thomas L. Ritzdorf , E. Henry Stevens , LinLin Chen , Lyndon W. Graham , Curt Dundas
发明人： Thomas L. Ritzdorf , E. Henry Stevens , LinLin Chen , Lyndon W. Graham , Curt Dundas
IPC分类号： C25D1700
CPC分类号： H01L21/67173 , C25D5/022 , C25D5/50 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/6723 , H01L21/76838 , H01L21/76877 , H01L21/76883
摘要： A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.
摘要翻译：阐述了在金属化的微电子工件（例如半导体晶片）的表面处填充凹陷微结构的方法。根据该方法，金属层通过诸如电镀工艺的工艺沉积到微结构中，该工艺产生足够小的金属颗粒，以便基本上填充凹陷的微结构。沉积的金属随后在低于约100摄氏度的温度下进行退火处理，并且甚至可以在环境室温下进行，以允许提供最佳电性能的晶粒生长。还提出了用于执行独特退火工艺的各种新型装置。

8. 发明授权

US07300562B2 Platinum alloy using electrochemical deposition 有权
标题翻译：铂合金使用电化学沉积
公开(公告)号：US07300562B2
公开(公告)日：2007-11-27
申请号：US10667802
申请日：2003-09-22
申请人： Zhongmin Hu , Thomas L. Ritzdorf , Lyndon W. Graham
发明人： Zhongmin Hu , Thomas L. Ritzdorf , Lyndon W. Graham
IPC分类号： C25D3/56
CPC分类号： C25D17/001 , C25D7/123
摘要： The present invention is directed to methods and compositions for depositing a noble metal alloy onto a microelectronic workpiece. In one particular aspect of the invention, a platinum metal alloy is electrochemically deposited on a surface of the workpiece from an acidic plating composition. The plated compositions when combined with high-k dielectric material are useful in capacitor structures.
摘要翻译：本发明涉及将贵金属合金沉积到微电子工件上的方法和组合物。在本发明的一个特定方面，铂金属合金由酸性电镀组合物电化学沉积在工件的表面上。当与高k电介质材料组合时，电镀组合物可用于电容器结构。

9. 发明授权

US07001471B2 Method and apparatus for low-temperature annealing of metallization microstructures in the production of a microelectronic device 失效
标题翻译：用于微电子器件生产中金属化微结构的低温退火的方法和装置
公开(公告)号：US07001471B2
公开(公告)日：2006-02-21
申请号：US09386734
申请日：1999-08-31
申请人： Thomas L. Ritzdorf , E. Henry Stevens , LinLin Chen , Lyndon W. Graham , Curt Dundas
发明人： Thomas L. Ritzdorf , E. Henry Stevens , LinLin Chen , Lyndon W. Graham , Curt Dundas
IPC分类号： C22F1/08 , C25D5/50
CPC分类号： H01L21/67173 , C25D5/022 , C25D5/50 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/6723 , H01L21/76838 , H01L21/76877 , H01L21/76883
摘要： A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.
摘要翻译：阐述了在金属化的微电子工件（例如半导体晶片）的表面处填充凹陷微结构的方法。根据该方法，金属层通过诸如电镀工艺的工艺沉积到微结构中，该工艺产生足够小的金属颗粒，以便基本上填充凹陷的微结构。沉积的金属随后在低于约100摄氏度的温度下进行退火处理，并且甚至可以在环境室温下进行，以允许提供最佳电性能的晶粒生长。还提出了用于执行独特退火工艺的各种新型装置。

10. 发明授权

US06753251B2 Method for filling recessed micro-structures with metallization in the production of a microelectronic device 有权
标题翻译：在制造微电子器件时用金属化填充凹陷微结构的方法
公开(公告)号：US06753251B2
公开(公告)日：2004-06-22
申请号：US10112166
申请日：2002-03-28
申请人： Thomas L. Ritzdorf , Lyndon W. Graham
发明人： Thomas L. Ritzdorf , Lyndon W. Graham
IPC分类号： H01L214763
CPC分类号： H01L21/2885 , C25D5/02 , C25D5/10 , C25D5/18 , C25D5/50 , C25D7/123 , H01L21/76877 , H01L21/76883
摘要： A method for filling recessed micro-structures at a surface of a semiconductor wafer with metallization is set forth. In accordance with the method, a metal layer is deposited into the micro-structures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed micro-structures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties.
摘要翻译：阐述了一种用金属化在半导体晶片的表面填充凹入的微结构的方法。根据该方法，金属层以诸如电镀工艺的工艺沉积到微结构中，该工艺产生足够小的金属颗粒，以便基本上填充凹陷的微结构。沉积的金属随后在低于约100摄氏度的温度下进行退火处理，并且甚至可以在环境室温下进行，以允许提供最佳电性能的晶粒生长。

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