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1. 发明授权

US09231050B1 Configuration and method to generate saddle junction electric field in edge termination 有权
公开(公告)号：US09231050B1
公开(公告)日：2016-01-05
申请号：US14298537
申请日：2014-06-06
申请人： Madhur Bobde , Lingping Guan , Anup Bhalla , Hamza Yilmaz
发明人： Madhur Bobde , Lingping Guan , Anup Bhalla , Hamza Yilmaz
IPC分类号： H01L27/088 , H01L29/06 , H01L21/761
CPC分类号： H01L29/0634 , H01L21/26513 , H01L21/761 , H01L29/0615 , H01L29/0619 , H01L29/6609 , H01L29/861
摘要： This invention discloses a semiconductor power device disposed in a semiconductor substrate and having an active cell area and an edge termination area the edge termination area wherein the edge termination area comprises a superjunction structure having doped semiconductor columns of alternating conductivity types with a charge imbalance between the doped semiconductor columns to generate a saddle junction electric field in the edge termination.

2. 发明授权

US09450050B2 Lateral super junctions with high substrate breakdown and build in avalanche clamp diode 有权
标题翻译：具有高基板击穿和内置雪崩钳位二极管的横向超结
公开(公告)号：US09450050B2
公开(公告)日：2016-09-20
申请号：US14062868
申请日：2013-10-24
申请人： Madhur Bobde , Anup Bhalla , Hamza Yilmaz , Wilson Ma , Lingping Guan , Yeeheng Lee , John Chen
发明人： Madhur Bobde , Anup Bhalla , Hamza Yilmaz , Wilson Ma , Lingping Guan , Yeeheng Lee , John Chen
IPC分类号： H01L29/66 , H01L29/10 , H01L29/808 , H01L29/06 , H01L27/07
CPC分类号： H01L29/1058 , H01L27/0727 , H01L29/0634 , H01L29/808 , H01L2224/0603 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： This invention discloses configurations and methods to manufacture lateral power device including a super-junction structure with an avalanche clamp diode formed between the drain and the gate. The lateral super-junction structure reduces on-resistance, while the structural enhancements, including an avalanche clamping diode and an N buffer region, increase the breakdown voltage between substrate and drain and improve unclamped inductive switching (UIS) performance.
摘要翻译：本发明公开了制造横向功率器件的结构和方法，该器件包括在漏极和栅极之间形成的具有雪崩钳位二极管的超结结构。横向超结结构降低了导通电阻，而结构增强（包括雪崩钳位二极管和N缓冲区）增加了衬底和漏极之间的击穿电压，并改善了非钳位感应开关（UIS）性能。

3. 发明申请

US20160005809A1 CONFIGURATION AND METHOD TO GENERATE SADDLE JUNCTION ELECTRIC FIELD IN EDGE TERMINATION 审中-公开
公开(公告)号：US20160005809A1
公开(公告)日：2016-01-07
申请号：US14298537
申请日：2014-06-06
申请人： Madhur Bobde , Lingpeng Guan , Anup Bhalla , Hamza Yilmaz
发明人： Madhur Bobde , Lingpeng Guan , Anup Bhalla , Hamza Yilmaz
IPC分类号： H01L29/06 , H01L21/761
CPC分类号： H01L29/0634 , H01L21/26513 , H01L21/761 , H01L29/0615 , H01L29/0619 , H01L29/6609 , H01L29/861
摘要： This invention discloses a semiconductor power device disposed in a semiconductor substrate and having an active cell area and an edge termination area the edge termination area wherein the edge termination area comprises a superjunction structure having doped semiconductor columns of alternating conductivity types with a charge imbalance between the doped semiconductor columns to generate a saddle junction electric field in the edge termination.

4. 发明申请

US20130260522A1 STAGGERED COLUMN SUPERJUNCTION 有权
公开(公告)号：US20130260522A1
公开(公告)日：2013-10-03
申请号：US13900162
申请日：2013-05-22
申请人： Lingpeng Guan , Madhur Bobde , Anup Bhalla , Hamza Yilmaz
发明人： Lingpeng Guan , Madhur Bobde , Anup Bhalla , Hamza Yilmaz
IPC分类号： H01L29/66
CPC分类号： H01L29/66712 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/404 , H01L29/7802 , H01L29/7811
摘要： A staggered column superjunction semiconductor device may include a cell region having one or more device cells. One or more device cells in the cell region include a semiconductor substrate configured to act as a drain and a semiconductor layer formed on the substrate. A first doped column may be formed in the semiconductor layer to a first depth and a second doped column may be formed in the semiconductor layer to a second depth. The first depth is greater than the second depth. The first and second columns are doped with dopants of a same second conductivity type and extend along a portion of a thickness of the semiconductor layer and are separated from each by a portion of the semiconductor layer.
摘要翻译：交错列超结半导体器件可以包括具有一个或多个器件单元的单元区域。单元区域中的一个或多个器件单元包括被配置为用作漏极的半导体衬底和形成在衬底上的半导体层。第一掺杂柱可以在半导体层中形成为第一深度，并且第二掺杂柱可以形成在半导体层中至第二深度。第一个深度大于第二个深度。第一和第二列掺杂有相同第二导电类型的掺杂剂并且沿着半导体层的厚度的一部分延伸并且由半导体层的一部分分离。

5. 发明申请

US20130049102A1 Buried field ring field effect transistor (BUF-FET) integrated with cells implanted with hole supply path 有权
标题翻译：埋地场环形场效应晶体管（BUF-FET）与注入孔供电路径的电池集成
公开(公告)号：US20130049102A1
公开(公告)日：2013-02-28
申请号：US13199381
申请日：2011-08-25
申请人： Madhur Bobde , Anup Bhalla , Hamza Yilmaz , Lingpeng Guan , Jun Hu
发明人： Madhur Bobde , Anup Bhalla , Hamza Yilmaz , Lingpeng Guan , Jun Hu
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/0623 , H01L29/0878 , H01L29/1095 , H01L29/36 , H01L29/407 , H01L29/66712 , H01L29/78 , H01L29/7811
摘要： This invention discloses a semiconductor power device formed in a semiconductor substrate comprises a highly doped region near a top surface of the semiconductor substrate on top of a lightly doped region. The semiconductor power device further comprises a body region, a source region and a gate disposed near the top surface of the semiconductor substrate and a drain disposed at a bottom surface of the semiconductor substrate. The semiconductor power device further comprises source trenches opened into the highly doped region filled with a conductive trench filling material in electrical contact with the source region near the top surface. The semiconductor power device further comprises a buried field ring regions disposed below the source trenches and doped with dopants of opposite conductivity from the highly doped region. In an alternate embodiment, the semiconductor power device further comprises doped regions surrounded the sidewalls of the source trenches and doped with a dopant of a same conductivity type of the buried field ring regions to function as a charge supply path.
摘要翻译：本发明公开了一种形成在半导体衬底中的半导体功率器件，包括在轻掺杂区域顶部附近的半导体衬底的顶表面附近的高掺杂区域。半导体功率器件还包括设置在半导体衬底的顶表面附近的体区，源区和栅极以及设置在半导体衬底的底表面处的漏极。半导体功率器件还包括开口到高掺杂区域的源沟槽，填充有与顶表面附近的源区电接触的导电沟槽填充材料。半导体功率器件还包括设置在源沟槽下方并且掺杂有与高掺杂区域具有相反导电性的掺杂剂的掩埋场环区域。在替代实施例中，半导体功率器件还包括围绕源极沟槽的侧壁的掺杂区域，并掺杂有相同导电类型的掩埋场环区域的掺杂剂，用作电荷供应路径。

6. 发明授权

US08373208B2 Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode 有权
标题翻译：具有高基板栅极击穿和内置雪崩钳位二极管的横向超接点器件
公开(公告)号：US08373208B2
公开(公告)日：2013-02-12
申请号：US12799810
申请日：2010-04-30
申请人： Madhur Bobde , Lingpeng Guan , Anup Bhalla , Hamza Yilmaz
发明人： Madhur Bobde , Lingpeng Guan , Anup Bhalla , Hamza Yilmaz
IPC分类号： H01L21/8232
CPC分类号： H01L29/808 , H01L29/0626 , H01L29/0634 , H01L29/0696 , H01L29/0843 , H01L29/0878 , H01L29/0882 , H01L29/1066 , H01L29/1095 , H01L29/4175 , H01L29/41766 , H01L29/4238 , H01L29/66696 , H01L29/66901 , H01L29/7817 , H01L29/7821
摘要： A lateral super junction JFET is formed from stacked alternating P type and N type semiconductor layers over a P-epi layer supported on an N+ substrate. An N+ drain column extends down through the super junction structure and the P-epi to connect to the N+ substrate to make the device a bottom drain device. N+ source column and P+ gate column extend through the super junction but stop at the P-epi layer. A gate-drain avalanche clamp diode is formed from the bottom the P+ gate column through the P-epi to the N+ drain substrate.
摘要翻译：横向超结JFET由负载在N +衬底上的P表面层上的堆叠的交替P型和N型半导体层形成。 N +漏极柱向下延伸穿过超结结构和P-epi以连接到N +衬底以使器件成为底部漏极器件。 N +源极柱和P +栅极柱延伸穿过超级结，但在P-epi层处停止。栅极 - 漏极雪崩钳位二极管从P +栅极底部通过P-epi到N +漏极衬底形成。

7. 发明授权

US10103240B2 Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode 有权
公开(公告)号：US10103240B2
公开(公告)日：2018-10-16
申请号：US13763675
申请日：2013-02-10
申请人： Madhur Bobde , Lingpeng Guann , Anup Bhalla , Hamza Yilmaz
发明人： Madhur Bobde , Lingpeng Guann , Anup Bhalla , Hamza Yilmaz
IPC分类号： H01L29/66
摘要： A lateral super junction JFET is formed from stacked alternating P type and N type semiconductor layers over a P-epi layer supported on an N+ substrate. An N+ drain column extends down through the super junction structure and the P-epi to connect to the N+ substrate to make the device a bottom drain device. N+ source column and P+ gate column extend through the super junction but stop at the P-epi layer. A gate-drain avalanche clamp diode is formed from the bottom the P+ gate column through the P-epi to the N+ drain substrate.

8. 发明申请

US20150115333A1 LATERAL SUPER JUNCTIONS WITH HIGH SUBSTRATE BREAKDOWN AND BUILD IN AVALANCHE CLAMP DIODE 审中-公开
标题翻译：具有高基板断裂和建立在AVALANCHE钳位二极管的横向超级结
公开(公告)号：US20150115333A1
公开(公告)日：2015-04-30
申请号：US14062868
申请日：2013-10-24
申请人： Madhur Bobde , Anup Bhalla , Hamza Yilmaz , Wilson Ma , Lingpeng Guan , Yeeheng Lee , John Chen
发明人： Madhur Bobde , Anup Bhalla , Hamza Yilmaz , Wilson Ma , Lingpeng Guan , Yeeheng Lee , John Chen
IPC分类号： H01L29/10 , H01L29/808 , H01L27/06
CPC分类号： H01L29/1058 , H01L27/0727 , H01L29/0634 , H01L29/808 , H01L2224/0603 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： This invention discloses configurations and methods to manufacture lateral power device including a super-junction structure with an avalanche clamp diode formed between the drain and the gate. The lateral super-junction structure reduces on-resistance, while the structural enhancements, including an avalanche clamping diode and an N buffer region, increase the breakdown voltage between substrate and drain and improve unclamped inductive switching (UIS) performance.
摘要翻译：本发明公开了制造横向功率器件的结构和方法，该器件包括在漏极和栅极之间形成的具有雪崩钳位二极管的超结结构。横向超结结构降低了导通电阻，而结构增强（包括雪崩钳位二极管和N缓冲区）增加了衬底和漏极之间的击穿电压，并改善了非钳位感应开关（UIS）性能。

9. 发明申请

US20130200451A1 NANO MOSFET WITH TRENCH BOTTOM OXIDE SHIELDED AND THIRD DIMENSIONAL P-BODY CONTACT 有权
标题翻译： NANO MOSFET，带有TRENCH BOTTOM OXIDE SILIELDED和第三维P-BODY接触
公开(公告)号：US20130200451A1
公开(公告)日：2013-08-08
申请号：US13364948
申请日：2012-02-02
申请人： Hamza Yilmaz , Daniel Ng , Daniel Calafut , Madhur Bobde , Anup Bhalla , Ji Pan , Yeeheng Lee , Jongoh Kim
发明人： Hamza Yilmaz , Daniel Ng , Daniel Calafut , Madhur Bobde , Anup Bhalla , Ji Pan , Yeeheng Lee , Jongoh Kim
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L21/26586 , H01L27/088 , H01L29/0623 , H01L29/0626 , H01L29/086 , H01L29/0865 , H01L29/0869 , H01L29/1095 , H01L29/404 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/456 , H01L29/66727 , H01L29/66734 , H01L29/7811
摘要： A semiconductor power device may include a lightly doped layer formed on a heavily doped layer. One or more devices are formed in the lightly doped layer. Each device may include a body region, a source region, and one or more gate electrodes formed in corresponding trenches in the lightly doped region. Each of the trenches has a depth in a first dimension, a width in a second dimension and a length in a third dimension. The body region is of opposite conductivity type to the lightly and heavily doped layers. The source region is formed proximate the upper surface. One or more deep contacts are formed at one or more locations along the third dimension proximate one or more of the trenches. The contacts extend in the first direction from the upper surface into the lightly doped layer and are in electrical contact with the source region.
摘要翻译：半导体功率器件可以包括在重掺杂层上形成的轻掺杂层。在轻掺杂层中形成一个或多个器件。每个器件可以包括主体区域，源极区域和形成在轻掺杂区域中的对应沟槽中的一个或多个栅电极。每个沟槽具有第一维度的深度，第二维度中的宽度和第三维度中的长度。体区与轻掺杂层和重掺杂层具有相反的导电类型。源区域靠近上表面形成。在靠近一个或多个沟槽的第三维度的一个或多个位置处形成一个或多个深触点。触点在第一方向上从上表面延伸到轻掺杂层中并与源区电接触。

10. 发明申请

US20100314682A1 Configurations and methods for manufacturing devices with trench-oxide-nano-tube super-junctions 有权
标题翻译：用于制造具有沟槽氧化物 - 纳米管超结的器件的配置和方法
公开(公告)号：US20100314682A1
公开(公告)日：2010-12-16
申请号：US12661004
申请日：2010-03-05
申请人： Hamza Yilmaz , Madhur Bobde , Yeeheng Lee , Lingpeng Guan , Xiaobin Wang , John Chen , Anup Bhalla
发明人： Hamza Yilmaz , Madhur Bobde , Yeeheng Lee , Lingpeng Guan , Xiaobin Wang , John Chen , Anup Bhalla
IPC分类号： H01L29/78 , H01L21/336 , H01L21/762
CPC分类号： H01L29/7397 , H01L29/0661 , H01L29/66348
摘要： This invention discloses semiconductor power device disposed on a semiconductor substrate of a first conductivity type. The semiconductor substrate supports an epitaxial layer of a second conductivity type thereon wherein the semiconductor power device is supported on a super-junction structure. The super-junction structure comprises a plurality of trenches opened from a top surface in the epitaxial layer; wherein each of the trenches having trench sidewalls covered with a first epitaxial layer of the first conductivity type to counter charge the epitaxial layer of the second conductivity type. A second epitaxial layer may be grown over the first epitaxial layer. Each of the trenches is filled with a non-doped dielectric material in a remaining trench gap space. Each of the trench sidewalls is opened with a tilted angle to form converging U-shaped trenches.
摘要翻译：本发明公开了一种设置在第一导电类型的半导体衬底上的半导体功率器件。半导体衬底在其上支撑第二导电类型的外延层，其中半导体功率器件被支撑在超结结构上。超结结构包括从外延层中的顶表面开放的多个沟槽; 其中每个沟槽具有覆盖有第一导电类型的第一外延层的沟槽侧壁，以对第二导电类型的外延层进行反电荷充电。可以在第一外延层上生长第二外延层。每个沟槽在剩余沟槽间隙空间中填充有非掺杂电介质材料。每个沟槽侧壁以倾斜角打开以形成会聚的U形沟槽。

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