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1. 发明授权

US09123795B2 Method of manufacturing semiconductor wafers 有权
标题翻译：制造半导体晶圆的方法
公开(公告)号：US09123795B2
公开(公告)日：2015-09-01
申请号：US14087883
申请日：2013-11-22
申请人： Fujikoshi Machinery Corp. , NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
发明人： Yoshio Nakamura , Daizo Ichikawa , Haruo Sumizawa , Shiro Hara , Sommawan Khumpuang , Shinichi Ikeda
IPC分类号： H01L21/00 , H01L21/78
CPC分类号： H01L21/78 , H01L21/02005 , H01L21/02008
摘要： A method of manufacturing semiconductor wafers which facilitates formation of orientation flat lines and allows beveling work without problems. The method of manufacturing semiconductor wafers includes steps wherein a plurality of small-diameter wafers is cut out from a large-diameter semiconductor wafer, the method including: a marking step of forming straight groove-like orientation flat lines by a laser beam so as to cross the respective small-diameter wafers in each row in the large-diameter semiconductor wafer, wherein cutout positions of the small-diameter wafers are aligned in rows in a specific direction, collectively for each of the rows; and a cutting step of cutting out the small-diameter wafers separately from the large-diameter semiconductor wafer, by a laser beam, after the marking step, in such a way that the orientation flat lines are located at required positions in the small-diameter wafers to be obtained.
摘要翻译：一种制造半导体晶片的方法，其有利于形成取向扁平线，并且可以毫无问题地进行斜切加工。制造半导体晶片的方法包括从大直径半导体晶片切出多个小直径晶片的步骤，该方法包括：标记步骤，通过激光束形成直槽状定向扁平线，以便跨越大直径半导体晶片中的每行中的各个小直径晶片，其中小直径晶片的切割位置对于每个行共同沿特定方向排成一行; 以及切割步骤，在所述标记步骤之后，通过激光束与所述大直径半导体晶片分开地切割所述小直径晶片，使得所述取向扁平线位于所述小直径的所需位置要获得的晶圆。

2. 发明申请

US20150050602A1 Spin Development Method and Apparatus 审中-公开
标题翻译：旋转发展方法和装置
公开(公告)号：US20150050602A1
公开(公告)日：2015-02-19
申请号：US14363512
申请日：2012-10-03
申请人： National Institute of Advanced Industrial Science and Technology
发明人： Sommawan Khumpuang , Shiro Hara
IPC分类号： G03F7/16 , B05C5/02 , B05C11/10 , B05C11/08
CPC分类号： G03F7/162 , B05C5/02 , B05C11/08 , B05C11/1005 , G03F7/3021
摘要： An optimal development method and an apparatus of a resist formed on a half-inch size wafer. The development method is a development method of a resist formed on a wafer with a wafer size for manufacturing a number of minimized units of semiconductor devices. The method includes a first step, a second step, a third step, and a fourth step. The first step drops developer until a thickness of developer becomes maximum on the wafer whose rotation is stopped. The second step performs development while rotating the wafer. The third step supplies the developer about a half of the amount of developer of the first step on the wafer whose rotation is stopped. The fourth step performs development at a development period longer than the second step while rotating the wafer.
摘要翻译：在半英寸大小的晶片上形成的最佳的显影方法和抗蚀剂的装置。显影方法是形成在具有用于制造多个半导体器件的最小化单元的晶片尺寸的晶片上的抗蚀剂的显影方法。该方法包括第一步骤，第二步骤，第三步骤和第四步骤。第一步骤降低显影剂，直到显影剂的厚度在旋转停止的晶片上达到最大值。第二步在旋转晶片的同时进行开发。第三步向显影器提供约一半的旋转停止的晶片上的第一步显影剂量。在旋转晶片的同时，第四步骤在比第二步长的显影时段进行显影。

3. 发明授权

US10286426B2 Columnar laminar flow generation device and method for generating columnar laminar flows 有权
公开(公告)号：US10286426B2
公开(公告)日：2019-05-14
申请号：US15260691
申请日：2016-09-09
申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY , LITHO TECH JAPAN CORPORATION , ORIENTAL MOTOR CO., LTD.
发明人： Shuuji Okuda , Sommawan Khumpuang , Shiro Hara , Sho Takeuchi , Yoshihisa Sensu , Takahiro Ito
IPC分类号： B08B5/02 , B08B15/00 , H01L21/67
摘要： A columnar laminar flow generation device includes: a placement part on which to place a processing target; a gas blow-out part having an opening; and a gas suction path; wherein the placement part is positioned in a space whose outer periphery surface is constituted by extending the interior wall of the opening in the direction vertical to the opening; the opening has, in its interior wall, a gas blow-out port through which a gas is blown out in one direction vertical to the opening; and the gas suction path is formed in such a way that it suctions the gas in the direction opposite to the one in which the gas is blown out. The columnar laminar generation device is capable of generating columnar laminar flows.

4. 发明授权

US10163819B2 Surface mount package and manufacturing method thereof 有权
公开(公告)号：US10163819B2
公开(公告)日：2018-12-25
申请号：US15529072
申请日：2015-11-24
申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
发明人： Shiro Hara , Sommawan Khumpuang , Fumito Imura , Michihiro Inoue , Arami Saruwatari
IPC分类号： H01L23/00 , H01L23/12 , H01L21/48 , H01L21/56 , H01L23/31 , H01L23/367 , H01L23/538 , H01L23/29
摘要： A method for manufacturing a surface-mount type package whose face parallel with the semiconductor chip surface has a circular cross-section, is characterized by including at least the following steps in this order: a first step in which a semiconductor chip is bonded onto a circular support substrate; a second step in which the semiconductor chip is sealed with resin; a third step in which the resin covering the pads of the semiconductor chip is removed; a fourth step in which a rewiring layer is formed; and a fifth step in which bumps are formed. The method can provide a surface-mount type package for semiconductor chips which is resistant to failures caused by thermal stress.

5. 发明授权

US10478867B2 Treatment liquid supply device using syringe, and wet treatment device 有权
公开(公告)号：US10478867B2
公开(公告)日：2019-11-19
申请号：US15532846
申请日：2015-12-02
申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
发明人： Shiro Hara , Sommawan Khumpuang , Akio Kobayashi , Takeshi Umino , Sonoko Matsuda
IPC分类号： B08B3/04 , B08B3/08 , B08B3/12 , H01L21/67
摘要： A treatment liquid supply device and a wet treatment device with which an extremely small quantity of the treatment liquid can be accurately supplied, as a method for supplying a treatment liquid to an extremely small wafer of half inch size, including: a syringe that sucks and discharges the treatment liquid; a treatment liquid bottle that is filled with the treatment liquid; a suction hose that has one end connected to the treatment liquid bottle and the other end connected to the syringe, and sucks the treatment liquid inside the treatment liquid bottle to the syringe; a supply hose that has one end connected to an intermediate section of the suction hose and serves to supply, to the surface of the wafer, the treatment liquid discharged by the syringe; and a three-way solenoid valve that controls opening/closing of each of the suction and supply hoses.

6. 发明申请

US20140320840A1 Exposure Apparatus and Exposure Method 有权
标题翻译：曝光装置和曝光方法
公开(公告)号：US20140320840A1
公开(公告)日：2014-10-30
申请号：US14363489
申请日：2012-12-04
申请人： National Institute of Advanced Industrial Science and Technology
发明人： Shiro Hara , Sommawan Khumpuang , Yoshiki Inuzuka , Yasuaki Yokoyama
IPC分类号： G03F7/20 , H01L21/677
CPC分类号： G03F7/70716 , G03F7/2051 , G03F7/70733 , H01L21/677 , H01L21/67733 , H01L21/67736 , H01L21/67796
摘要： To provide a mask aligner that can appropriately manage very small-quantity production and multiproduct production. The present invention is a mask aligner 1 that exposes a wafer W in a predetermined size through a mask M, and has a configuration that includes: a conveying device 5 for conveying the wafer W and the mask M; an exposure stage 3f on which the wafer W conveyed by the conveying device 5 is installed; a mask holder 3b that is mounted to face the exposure stage 3f and on which the mask M conveyed by the conveying device 5 is installed; and an LED light source 8c mounted to face the exposure stage 3f via the mask holder 3b.
摘要翻译：提供可以适当地管理非常小批量的生产和多产品生产的掩模对准器。本发明是一种掩模对准器1，其通过掩模M使预定尺寸的晶片W曝光，并具有包括：用于输送晶片W和掩模M的输送装置5; 曝光台3f，其上安装由输送装置5输送的晶片W; 安装在面对曝光台3f并且由传送装置5输送的面罩M安装在其上的面罩座3b; 以及经由掩模保持器3b安装成面向曝光台3f的LED光源8c。

7. 发明授权

US10431446B2 Wet processing apparatus 有权
公开(公告)号：US10431446B2
公开(公告)日：2019-10-01
申请号：US15037886
申请日：2014-12-01
申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
发明人： Shiro Hara , Sommawan Khumpuang , Shinichi Ikeda , Akihiro Goto , Hiroshi Amano
IPC分类号： H01L21/02 , H01L21/67 , H01L21/687 , B08B3/08 , B08B3/10 , B08B3/12
摘要： A wafer cleaner and a method therefor that efficiently cleans a wafer with a little amount of a cleaning liquid and efficiently performs a heating wet cleaning processing. The present invention includes a stage where a wafer is placed, a rotary driving unit that rotates the stage in a circumferential direction, a liquid discharge nozzle disposed facing the wafer placed on the stage and supplies a cleaning liquid on the wafer placed on the stage, and a control unit that causes the liquid discharge nozzle to supply a space between the wafer placed on the stage and the liquid discharge nozzle with a predetermined amount of the cleaning liquid to fill the space. The present invention also includes a lamp disposed on a position facing the wafer placed on the stage to heat at least an interface portion of the wafer and a cleaning liquid.

8. 发明授权

US10186489B2 Process substrate with crystal orientation mark, method of detecting crystal orientation, and reading device of crystal orientation mark 有权
公开(公告)号：US10186489B2
公开(公告)日：2019-01-22
申请号：US14913176
申请日：2014-07-24
申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
发明人： Shiro Hara , Sommawan Khumpuang , Shinichi Ikeda
IPC分类号： H01L23/544 , G01B11/14 , H01L29/04 , H01L21/67
摘要： To provide a crystal orientation mark which can be formed easily and inexpensively, and which enables to perform high precision alignment and allows information other than crystal orientation to be included, even for a small diameter process substrate. A crystal orientation mark is drawn on the surface of the process substrate. The crystal orientation mark includes a marking region for crystal orientation detection, and a marking region for information. The marking region for crystal orientation detection is provided at two locations in an outer edge portion of the process substrate to be used for the alignment of the process substrate. The marking region for information is provided on a straight-line region connecting the marking regions for crystal orientation detection at the two locations, and includes a pattern for demonstrating predetermined information relating to the process substrate.

9. 发明授权

US09513567B2 Exposure apparatus and exposure method 有权
标题翻译：曝光装置和曝光方法
公开(公告)号：US09513567B2
公开(公告)日：2016-12-06
申请号：US14363489
申请日：2012-12-04
申请人： National Institute of Advanced Industrial Science and Technology
发明人： Shiro Hara , Sommawan Khumpuang , Yoshiki Inuzuka , Yasuaki Yokoyama
IPC分类号： G03B27/58 , G03F7/20 , H01L21/677
CPC分类号： G03F7/70716 , G03F7/2051 , G03F7/70733 , H01L21/677 , H01L21/67733 , H01L21/67736 , H01L21/67796
摘要： To provide a mask aligner that can appropriately manage very small-quantity production and multiproduct production. The present invention is a mask aligner 1 that exposes a wafer W in a predetermined size through a mask M, and has a configuration that includes: a conveying device 5 for conveying the wafer W and the mask M; an exposure stage 3f on which the wafer W conveyed by the conveying device 5 is installed; a mask holder 3b that is mounted to face the exposure stage 3f and on which the mask M conveyed by the conveying device 5 is installed; and an LED light source 8c mounted to face the exposure stage 3f via the mask holder 3b.
摘要翻译：提供可以适当地管理非常小批量的生产和多产品生产的掩模对准器。本发明是一种掩模对准器1，其通过掩模M使预定尺寸的晶片W曝光，并具有包括：用于输送晶片W和掩模M的输送装置5; 曝光台3f，其上安装由输送装置5输送的晶片W; 安装在面对曝光台3f并且由传送装置5输送的面罩M安装在其上的面罩座3b; 以及经由掩模保持器3b安装成面向曝光台3f的LED光源8c。

10. 发明申请

US20140338591A1 CONVERGING MIRROR FURNACE 有权
公开(公告)号：US20140338591A1
公开(公告)日：2014-11-20
申请号：US14362348
申请日：2012-11-30
申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
发明人： Shinichi Ikeda , Shiro Hara , Takanori Mikahara , Hitoshi Habuka , Sommawan Khumpuang
IPC分类号： C23C16/48 , C30B13/24
CPC分类号： C23C16/482 , C30B13/24 , F27B17/0025 , F27D2099/0026 , H01L21/67115 , Y10T117/108
摘要： Provide a converging mirror-based furnace for heating a target by way of reflecting from a reflecting mirror unit the light emitted from a light source and then irradiating a target with the reflected light, wherein said target-heating converging-light furnace is such that: the reflecting mirror unit comprises a primary reflecting mirror and secondary reflecting mirror; the light emitted from the light source is reflected sequentially by the primary reflecting mirror and secondary reflecting mirror and then irradiated onto the target; and the light reflected by the secondary reflecting mirror and irradiated onto the target surface is not perpendicular to the target surface. Based on the above, a system that uses converged infrared light to provide heating can be made smaller while keeping its heating performance intact, even when the system uses a revolving ellipsoid.
摘要翻译：提供一种会聚反射镜式炉，用于通过从反射镜单元反射从光源发射的光然后用反射光照射目标来加热目标，其中所述目标加热会聚光炉使得：反射镜单元包括主反射镜和次反射镜; 从光源发射的光被主反射镜和次反射镜依次反射，然后照射到目标上; 并且由二次反射镜反射并被照射到目标表面上的光不与目标表面垂直。基于上述，即使系统使用旋转椭圆体，也可以使使用会聚红外线来提供加热的系统更小，同时保持其加热性能不变。

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