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1. 发明授权

US10305034B2 Variable resistance element and method for producing variable resistance element 有权
公开(公告)号：US10305034B2
公开(公告)日：2019-05-28
申请号：US15577408
申请日：2016-06-08
申请人： NEC Corporation
发明人： Munehiro Tada , Naoki Banno , Koichiro Okamoto
IPC分类号： H01L45/00
摘要： In order to improve the number rewrites by improving the dielectric breakdown resistance of an ion conducting layer in a variable resistance element, this variable resistance element is provided with: a first electrode that contains at least copper; a second electrode that contains at least Ru, nitrogen and a first metal; and an ion conducting layer that is positioned between the first electrode and the second electrode.

2. 发明授权

US09530496B2 Method for programming switching element 有权
标题翻译：开关元件编程方法
公开(公告)号：US09530496B2
公开(公告)日：2016-12-27
申请号：US14895239
申请日：2014-06-17
申请人： NEC CORPORATION
发明人： Munehiro Tada
IPC分类号： G11C11/00 , G11C13/00
CPC分类号： G11C13/0069 , G11C13/0011 , G11C13/0016 , G11C13/0064 , G11C2013/0076 , G11C2013/0092 , G11C2213/79
摘要： In order to realize a switching element that is highly reliable and can be highly integrated, in a method for programming a switching element of the present invention, programming of the switching element is performed by increasing or decreasing a resistance value R of a resistive-change film by applying a first pulse voltage to a first electrode or a second electrode, a measurement of the resistance value R is performed, verification in which it is determined whether or not the measured resistance value R is equal to a desired value is performed, and reprogramming of the switching element is performed by applying a second pulse voltage whose polarity is the same as that of the first pulse voltage to the same electrode to which the first pulse voltage is applied on the basis of the resistance value R when the resistance value R is not equal to the desired value.
摘要翻译：为了实现高度可靠性并且可以高度集成的开关元件，在本发明的开关元件的编程方法中，通过增加或减少电阻变化的电阻值R来执行开关元件的编程通过对第一电极或第二电极施加第一脉冲电压进行电阻值R的测定，进行确定测量电阻值R是否等于期望值的验证，以及开关元件的重新编程是通过将第二脉冲电压的极性与第一脉冲电压相同的第二脉冲电压基于电阻值R施加到施加了第一脉冲电压的同一电极上，当电阻值R 不等于所需值。

3. 发明授权

US09231207B2 Method for forming resistance changing element capable of operating at low voltage 有权
标题翻译：用于形成能够在低电压下操作的电阻变化元件的方法
公开(公告)号：US09231207B2
公开(公告)日：2016-01-05
申请号：US14574666
申请日：2014-12-18
申请人： NEC Corporation
发明人： Munehiro Tada , Koichiro Okamoto , Toshitsugu Sakamoto , Hiromitsu Hada
IPC分类号： H01L21/20 , H01L45/00 , H01C7/00 , H01C7/18 , H01C17/08
CPC分类号： H01L45/1616 , H01C7/006 , H01C7/18 , H01C17/08 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/1675
摘要： A resistance changing element according to the present invention comprises a first electrode (101) and a second electrode (103); and an ion conducting layer (102) that is formed between the first electrode (101) and the second electrode (103) and that contains at least oxygen and carbon.
摘要翻译：根据本发明的电阻改变元件包括第一电极（101）和第二电极（103）; 和形成在第一电极（101）和第二电极（103）之间并且至少含有氧和碳的离子传导层（102）。

4. 发明授权

US10396798B2 Reconfigurable circuit 有权
公开(公告)号：US10396798B2
公开(公告)日：2019-08-27
申请号：US15767683
申请日：2015-10-16
申请人： NEC Corporation
发明人： Xu Bai , Toshitsugu Sakamoto , Munehiro Tada , Yukihide Tsuji , Ayuka Tada , Makoto Miyamura , Ryusuke Nebashi
IPC分类号： H03K19/173 , H03K19/177 , G06F15/78 , G06F17/50
摘要： A reconfigurable circuit includes first and second wires and two or more paths active at different times. Each path includes: a first NVRS whose first terminal is connected to the first wire; a first transistor whose drain terminal is connected to a second terminal of the first NVRS; a second NVRS whose first terminal is connected to the second terminal of the first NVRS; a second transistor whose source terminal is connected to a second terminal of the second NVRS and whose drain terminal is connected to the second wire; and a 2-input AND circuit whose output is connected to a gate terminal of the first transistor. A time control signal is supplied to a first input of the 2-input AND circuit and a gate terminal of the second transistor. A write control signal is supplied to a second input of the 2-input AND circuit.

5. 发明授权

US10340452B2 Variable resistance element, semiconductor device, and manufacturing method of semiconductor device 有权
公开(公告)号：US10340452B2
公开(公告)日：2019-07-02
申请号：US15361560
申请日：2016-11-28
申请人： NEC CORPORATION
发明人： Naoki Banno , Munehiro Tada
IPC分类号： H01L45/00
摘要： A variable resistance element according to the present invention comprises a configuration in which an ion conduction layer is arranged between an upper electrode and a lower electrode, wherein a recess part is formed on a surface of the lower electrode of the variable resistance element, and the ion conduction layer is formed in contact with at least the recess part on a surface of the lower electrode.

6. 发明授权

US10312288B2 Switching element, semiconductor device, and semiconductor device manufacturing method 有权
公开(公告)号：US10312288B2
公开(公告)日：2019-06-04
申请号：US15561586
申请日：2016-04-06
申请人： NEC Corporation
发明人： Munehiro Tada , Tadahiko Sugibayashi
IPC分类号： H01L47/00 , H01L27/24 , H01L27/105 , H01L45/00 , G11C13/00
摘要： In the cases of performing programming by forming a two-terminal-type variable resistance element on a semiconductor device, it has been difficult to control the programming, and malfunctions have often occurred. This switching element includes at least a first variable resistance element, a second variable resistance element, a first rectifying element, and a second rectifying element, one end of the first variable resistance element and one end of the second variable resistance element are respectively connected to one end of the first rectifying element and one end of the second rectifying element, and each of the rectifying elements has two terminals.

7. 发明授权

US10249643B2 Hard copied semiconductor device having a resistance-variable non-volatile element 有权
公开(公告)号：US10249643B2
公开(公告)日：2019-04-02
申请号：US15318792
申请日：2015-06-19
申请人： NEC CORPORATION
发明人： Munehiro Tada
IPC分类号： H01L27/24 , H01L27/11 , H01L27/118 , G06F17/50 , H01L45/00 , H01L27/10
摘要： Provided are a semiconductor device and a method of manufacturing the semiconductor device which enable a hard copy of a reconfigurable circuit, which employs a resistance variable element, to be formed at low cost. The method of manufacturing a semiconductor device is for manufacturing a hard copy from a reconfigurable circuit chip that employs a resistance-variable non-volatile element formed inside a multi-layered wiring layer on a semiconductor substrate, wherein the hard copy is manufactured by using a semiconductor substrate base that is the same as that of the semiconductor substrate for forming the reconfigurable circuit chip.

8. 发明授权

US10103329B2 Switching element and method for manufacturing switching element 有权
公开(公告)号：US10103329B2
公开(公告)日：2018-10-16
申请号：US14410282
申请日：2013-06-03
申请人： NEC Corporation
发明人： Naoki Banno , Munehiro Tada , Toshitsugu Sakamoto
IPC分类号： H01L45/00
摘要： The present invention provides a non-volatile switching element that can be applied to a programmable-logic wiring changeover switch and in which an electrochemical reaction is used. Of the two electrodes for applying a bias voltage to the variable resistance layer of the non-volatile switching element, the electrode that does not feed metal ions to the variable resistance layer when the switch is in the ON state is made from a ruthenium alloy. The ruthenium alloy includes ruthenium and a metal in which the standard Gibbs energy of forming ΔG when metal ions are generated from the metal is higher in the negative direction than ΔG of ruthenium. As a result, it becomes possible to maintain the low-resistance state in the ON state for a longer period of time without increasing the amount of electrical current required when a switch is made between the ON state and the OFF state.

9. 发明申请

US20150262864A1 METHOD FOR FORMING WIRING 有权
标题翻译：形成接线方法
公开(公告)号：US20150262864A1
公开(公告)日：2015-09-17
申请号：US14433061
申请日：2013-08-20
申请人： NEC CORPORATION
发明人： Koichiro Okamoto , Munehiro Tada , Hiromitsu Hada , Toshitsugu Sakamoto
IPC分类号： H01L21/768 , H01L21/02
CPC分类号： H01L21/76802 , H01L21/02063 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/02274 , H01L21/02282 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144 , H01L21/32136 , H01L21/76808 , H01L21/76814 , H01L21/76832 , H01L21/76879 , H01L45/085 , H01L45/1206 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/1675 , H01L2221/1036
摘要： The present invention addresses the problem of inhibiting the evolution of a poisoning gas to eliminate wiring-pattern resolution failures and thereby forming a desired wiring layer structure to provide functional elements having an improved property yield. This method for forming multi-layered copper interconnect on a semiconductor substrate comprises: forming a multilayer resist structure to form a given resist pattern on a substrate including an interlayer dielectric film that has via holes which have been formed in part thereof and filled with an SOC layer, the multilayer resist structure comprising an SOC layer, an SOG layer, an SiO2 layer, and a chemical amplification type resist superposed in this order from the substrate side; conducting etching using the resist pattern as a mask to form a pattern for a wiring layer and via plugs; and forming the wiring layer and the via plugs in the pattern.
摘要翻译：本发明解决了抑制中毒气体的发展以消除布线图案分辨率故障的问题，从而形成所需的布线层结构以提供具有改进的性能产量的功能元件。用于在半导体衬底上形成多层铜互连的方法包括：形成多层抗蚀剂结构，以在包括层间绝缘膜的衬底上形成给定的抗蚀剂图案，所述层间绝缘膜具有在其部分形成并填充有SOC的通孔层，所述多层抗蚀剂结构体包含SOC层，SOG层，SiO 2层和从所述基板侧依次叠加的化学放大型抗蚀剂; 使用抗蚀剂图案作为掩模进行蚀刻以形成用于布线层和经由插塞的图案; 并以图案形成布线层和通孔塞。

10. 发明授权

US10424617B2 Crossbar switch with an arrangement of wires, logic integrated circuit using the same, and semiconductor device 有权
公开(公告)号：US10424617B2
公开(公告)日：2019-09-24
申请号：US15508980
申请日：2015-09-11
申请人： NEC Corporation
发明人： Yukihide Tsuji , Xu Bai , Makoto Miyamura , Toshitsugu Sakamoto , Munehiro Tada
IPC分类号： H01L27/24 , H01L21/82 , H01L27/105 , H01L23/522 , H01L23/528 , H01L45/00 , H03K19/173 , H03K19/177
摘要： A crossbar switch includes a plurality of first wires extending in a first direction and second wires extending in a second direction. The switch includes third wires extending in a third direction and fourth wires extending in a fourth direction. The switch includes switch cells connected to the first and second wires. The first wires are skewed relative to the second and fourth wires, while the third wires are skewed relative to the second and fourth wires. The switch cells are connected to the third and fourth wires, and the third wires are also connected to the switch cells connected to the first wires adjacent to the respective first wires, or alternatively the fourth wires are also connected to the switch cells connected to the second wires adjacent to the respective second wires.

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