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1. 发明授权

US07972939B2 Transfer method with a treatment of a surface to be bonded 有权
标题翻译：转移方法处理待粘合的表面
公开(公告)号：US07972939B2
公开(公告)日：2011-07-05
申请号：US12566036
申请日：2009-09-24
申请人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
发明人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： A method for minimizing or avoiding contamination of a receiving handle wafer during transfer of a thin layer from a donor wafer. This method includes providing a donor wafer and a receiving handle wafer, each having a first surface prepared for bonding and a second surface, with the donor wafer providing a layer of material to be transferred to the receiving handle wafer. Next, at least one of the first surfaces is treated to provide increased bonding energy when the first surfaces are bonded together; the surfaces are then bonded together to form an intermediate multilayer structure; and a portion of the donor wafer is removed to transfer the thin layer to the receiving handle wafer and form the semiconductor structure. This method avoids or minimizes contamination of the second surface of the receiving handle wafer by treating only the first surface of the donor wafer prior to bonding by exposure to a plasma, and by conducting any thermal treatments after plasma activation at a temperature of 300° C. to 500° C. in order to avoid diffusion of impurities into the transfer layer.
摘要翻译：一种用于在从施主晶片传输薄层期间最小化或避免接收处理晶片的污染的方法。该方法包括提供施主晶片和接收处理晶片，每个晶片具有准备用于接合的第一表面和第二表面，施主晶片提供要传送到接收处理晶片的材料层。接下来，当第一表面结合在一起时，处理至少一个第一表面以提供增加的结合能; 然后将表面结合在一起以形成中间多层结构; 并且去除施主晶片的一部分以将薄层转移到接收处理晶片并形成半导体结构。该方法通过在通过暴露于等离子体的接合之前仅处理施主晶片的第一表面，并且在300℃的温度下进行等离子体激活之后进行任何热处理来避免或最小化接收处理晶片的第二表面的污染至500℃，以避免杂质扩散到转移层中。

2. 发明授权

US07615464B2 Transfer method with a treatment of a surface to be bonded 有权
标题翻译：转移方法处理待粘合的表面
公开(公告)号：US07615464B2
公开(公告)日：2009-11-10
申请号：US11138926
申请日：2005-05-25
申请人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
发明人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： A method for minimizing or avoiding contamination of a receiving handle wafer during transfer of a thin layer from a donor wafer. This method includes one step of providing a donor wafer and a receiving handle wafer, each having a first surface prepared for bonding and a second surface, with the donor layer including a zone of weakness that defines a thin layer of donor wafer material to be transferred to the receiving handle wafer. Next, at least one of the first surfaces is treated to provide increased bonding energy when the first surfaces are bonded together; the surfaces are then bonded together to form an intermediate multilayer structure; and the thin layer is transferred to the receiving handle wafer to form a final multilayer structure by detachment at the zone of weakness and removal of remaining material of the donor wafer. This method avoids or minimizes contamination of the second surface of the receiving handle wafer by treating only the first bonding surface of the donor wafer prior to bonding, or by cleaning contamination from the second surface of the handle receiving wafer when present in the intermediate multilayer structure prior to detachment of the thin layer.
摘要翻译：一种用于在从施主晶片传输薄层期间最小化或避免接收处理晶片的污染的方法。该方法包括提供施主晶片和接收处理晶片的一个步骤，每个晶片具有准备用于接合的第一表面和第二表面，供体层包括限定要转移的施主晶片材料薄层的弱点区域到接收处理晶片。接下来，当第一表面结合在一起时，处理至少一个第一表面以提供增加的结合能; 然后将表面结合在一起以形成中间多层结构; 并且薄层被转移到接收处理晶片，以通过在弱化区域分离并且去除施主晶片的剩余材料而形成最终的多层结构。该方法通过仅在接合之前仅处理供体晶片的第一接合表面，或者当存在于中间多层结构中时，通过清洁来自手柄接收晶片的第二表面的污染来避免或最小化接收处理晶片的第二表面的污染在薄层分离之前。

3. 发明申请

US20060270187A1 Transfer method with a treatment of a surface to be bonded 有权
公开(公告)号：US20060270187A1
公开(公告)日：2006-11-30
申请号：US11138926
申请日：2005-05-25
申请人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
发明人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： A method for minimizing or avoiding contamination of a receiving handle wafer during transfer of a thin layer from a donor wafer. This method includes one step of providing a donor wafer and a receiving handle wafer, each having a first surface prepared for bonding and a second surface, with the donor layer including a zone of weakness that defines a thin layer of donor wafer material to be transferred to the receiving handle wafer. Next, at least one of the first surfaces is treated to provide increased bonding energy when the first surfaces are bonded together; the surfaces are then bonded together to form an intermediate multilayer structure; and the thin layer is transferred to the receiving handle wafer to form a final multilayer structure by detachment at the zone of weakness and removal of remaining material of the donor wafer. This method avoids or minimizes contamination of the second surface of the receiving handle wafer by treating only the first bonding surface of the donor wafer prior to bonding, or by cleaning contamination from the second surface of the handle receiving wafer when present in the intermediate multilayer structure prior to detachment of the thin layer.

4. 发明授权

US07235461B2 Method for bonding semiconductor structures together 有权
标题翻译：将半导体结构结合在一起的方法
公开(公告)号：US07235461B2
公开(公告)日：2007-06-26
申请号：US10832267
申请日：2004-04-27
申请人： Christophe Maleville , Corinne Maunand Tussot , Olivier Rayssac , Sébastien Kerdiles , Benjamin Scarfogliere , Hubert Moriceau , Christophe Morales
发明人： Christophe Maleville , Corinne Maunand Tussot , Olivier Rayssac , Sébastien Kerdiles , Benjamin Scarfogliere , Hubert Moriceau , Christophe Morales
IPC分类号： H01L21/46
CPC分类号： H01L21/76259 , H01L21/2007 , H01L21/76251 , H01L21/76254
摘要： A method for bonding semiconductor structures together is described. The technique includes providing a bonding surface on each of two semiconductor structures, brushing a bonding surface of at least one of the structures to remove contaminants and to activate hydroxyl groups on the bonding surface to enhance hydrophilicity and to facilitate molecular bonding of the structures, and joining the bonding surfaces together by molecular bonding to form a composite structure.
摘要翻译：描述将半导体结构结合在一起的方法。该技术包括在两个半导体结构中的每一个上提供接合表面，刷洗至少一个结构的结合表面以去除污染物并激活接合表面上的羟基以增强亲水性并促进结构的分子结合，以及通过分子键合将接合表面结合在一起以形成复合结构。

5. 发明授权

US07022586B2 Method for recycling a substrate 有权
标题翻译：回收基材的方法
公开(公告)号：US07022586B2
公开(公告)日：2006-04-04
申请号：US10728343
申请日：2003-12-03
申请人： Christophe Maleville , Fabrice Letertre , Thibaut Maurice , Carlos Mazure , Fredéric Metral
发明人： Christophe Maleville , Fabrice Letertre , Thibaut Maurice , Carlos Mazure , Fredéric Metral
IPC分类号： H01L21/30
CPC分类号： H01L21/02019 , H01L21/02032 , H01L21/02079 , H01L21/30608 , H01L21/76254
摘要： The present invention relates to a method for recycling a substrate that has a residue on its surface and a detachment profile resulting from an implantation process. The method includes removing the residue from the substrate to a level substantially equivalent to that of the detachment profile, thus obtaining a substantially uniform planar surface on the substrate, and then polishing the entire surface of the substrate to eliminate defects.
摘要翻译：本发明涉及一种在其表面上具有残留物的基板的再循环方法和由注入工艺产生的脱离轮廓。该方法包括将残留物从基材中除去至基本上等于脱模轮廓的水平，从而在基材上获得基本上均匀的平坦表面，然后抛光基材的整个表面以消除缺陷。

6. 发明授权

US08216917B2 Method for fabricating a semiconductor on insulator type substrate 有权
标题翻译：绝缘子半导体衬底的制造方法
公开(公告)号：US08216917B2
公开(公告)日：2012-07-10
申请号：US12863904
申请日：2009-01-29
申请人： Christophe Maleville
发明人： Christophe Maleville
IPC分类号： H01L21/46
CPC分类号： H01L21/76254 , H01L21/02079 , Y10S438/977
摘要： A method for fabricating a substrate of the semiconductor on insulator type by forming an epitaxial layer of semiconducting material on a donor substrate having oxygen precipitates with a density of less than 1010/cm3 or a mean size of less than 500 nm, forming an oxide layer on either a donor or receiver substrate, implanting atomic species in the donor substrate to form a weakened zone in the epitaxial layer, bonding the donor and receiver substrates together, with the oxide layer present at the bonding interface, fracturing the donor substrate in the weakened zone to transfer a layer of the donor substrate to the receiver substrate with the transferred layer including the epitaxial layer, and recycling the remainder of the donor substrate to form a receiver substrate for fabrication of a second semiconductor on insulator type substrate.
摘要翻译：一种通过在具有小于1010 / cm3或小于500nm的密度的氧沉淀物的施主衬底上形成半导体材料的外延层来制造绝缘体上半导体衬底的方法，形成氧化物层在施主或接收器衬底上，在施主衬底中植入原子物质以在外延层中形成弱化区，将施主和接收衬底结合在一起，氧化层存在于接合界面处，将施主衬底压裂在弱化层区域，其中所述转移层包括所述外延层将所述施主衬底的层转移到所述接收器衬底，以及再循环所述施主衬底的其余部分以形成用于制造第二半导体绝缘体型衬底的接收器衬底。

7. 发明授权

US07883994B2 Process for the transfer of a thin film 有权
标题翻译：薄膜转印工艺
公开(公告)号：US07883994B2
公开(公告)日：2011-02-08
申请号：US11747733
申请日：2007-05-11
申请人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
发明人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
IPC分类号： H01L21/265
CPC分类号： H01L21/76254 , H01L21/26506 , Y10S438/977
摘要： A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.
摘要翻译：用于转移薄膜的方法包括形成夹杂物层以产生气态化合物的捕集阱。夹杂物可以是一个或多个植入区域的形式，其作为被配置成捕获植入物种的限制层。此外，夹杂物可以是通过化学气相沉积，外延生长，离子溅射或由任何上述方法形成的应力区域或层沉积的一个或多个层的形式。夹杂物也可以是通过初始载体的热处理或通过任何上述方法形成的层的热处理形成的区域，或者通过蚀刻层中的空腔而形成的区域。在随后的步骤中，将气体化合物引入到夹杂物层中以形成形成断裂平面的微空腔，通过该断裂平面可以将薄膜与基底的其余部分分离。

8. 发明授权

US07645392B2 Methods for preparing a bonding surface of a semiconductor wafer 有权
标题翻译：制备半导体晶片的接合表面的方法
公开(公告)号：US07645392B2
公开(公告)日：2010-01-12
申请号：US11472665
申请日：2006-06-21
申请人： Corinne Maunand Tussot , Christophe Maleville , Hubert Moriceau , Alain Soubie
发明人： Corinne Maunand Tussot , Christophe Maleville , Hubert Moriceau , Alain Soubie
IPC分类号： B44C1/22
CPC分类号： H01L21/76254
摘要： A method for preparing an oxidized surface of a first wafer for bonding with a second wafer. The method includes treating the oxidized surface with a solution of NH4OH/H2O2 at treatment parameters sufficient to etch about 10 Å to about 120 Å from the wafer surface, followed by treating the etched surface with hydrochloric acid species at a temperature below about 50° C. for a duration of less than about 10 minutes to remove isolated particles from the oxidized surface. This method cleans the wafer surface without increasing roughness or creating rough patches thereon, and thus provides a cleaned surface capable of providing an increased bonding energy between the first and second wafers when those surfaces are bonded together. This cleaning process is advantageously used in a thin layer removal process to fabricate a semiconductor on insulator structure.
摘要翻译：一种用于制备用于与第二晶片接合的第一晶片的氧化表面的方法。该方法包括用NH 4 OH / H 2 O 2溶液处理氧化表面，处理参数足以从晶片表面蚀刻约大约至大约120埃，然后在低于约50℃的温度下用盐酸处理蚀刻的表面持续时间少于约10分钟以从氧化表面除去分离的颗粒。该方法清洁晶片表面而不会增加粗糙度或在其上产生粗糙的贴片，从而提供了当这些表面粘接在一起时能够在第一和第二晶片之间提供增加的结合能的清洁表面。该清洁方法有利地用于薄层去除工艺以制造绝缘体上半导体结构。

9. 发明授权

US07465645B2 Method of detaching a layer from a wafer using a localized starting area 有权
标题翻译：使用局部起始区域从晶片分离层的方法
公开(公告)号：US07465645B2
公开(公告)日：2008-12-16
申请号：US10766207
申请日：2004-01-29
申请人： Walter Schwarzenbach , Christophe Maleville , Nadia Ben Mohamed
发明人： Walter Schwarzenbach , Christophe Maleville , Nadia Ben Mohamed
IPC分类号： H01L21/46 , H01L21/30
CPC分类号： H01L21/76254
摘要： A method for detaching a layer from a wafer. A weakened zone is created in the wafer to define the layer to be detached and a remainder portion of the wafer, such that the weakened zone includes a main region and a localized super-weakened region that is more weakened than the main region. Detachment of the layer from the remainder portion of the wafer is initiated at the super-weakened region such that the detachment properties to the main region to detach the layer from the remainder portion.
摘要翻译：一种从晶片上分离层的方法。在晶片中产生弱化区以限定待分离的层和晶片的剩余部分，使得弱化区域包括主区域和比主区域更弱的局部超弱化区域。在超弱化区域处开始从晶片的剩余部分分离层，使得到主区域的剥离性能使层与剩余部分分离。

10. 发明申请

US20070026692A1 Method for applying a high temperature heat treatment to a semiconductor wafer 失效
标题翻译：向半导体晶片施加高温热处理的方法
公开(公告)号：US20070026692A1
公开(公告)日：2007-02-01
申请号：US11529959
申请日：2006-09-29
申请人： Christophe Maleville , Walter Schwarzenbach , Vivien Renauld
发明人： Christophe Maleville , Walter Schwarzenbach , Vivien Renauld
IPC分类号： H01L21/00
CPC分类号： H01L21/02255 , H01L21/02238 , H01L21/31658 , H01L21/67098
摘要： The invention provides methods for applying high temperature treatments to semiconductor wafers that limit surface tearing-off defects and surface particle contamination. In preferred embodiments, the high temperature treatments begin at boat-in temperatures of less than about 550° C. and include a first temperature ramp-up to the HT treatment temperatures at rates of 6° C./min or less. These methods are advantageously applied to semiconductor wafers comprising layers of different thermal properties, and in particular to semiconductor wafers comprising silicon-on-insulator structures.
摘要翻译：本发明提供了对限制表面撕裂缺陷和表面颗粒污染的半导体晶片施加高温处理的方法。在优选的实施方案中，高温处理从低于约550℃的船上温度开始，并且包括以6℃/ min或更低的速率升温至HT处理温度的第一温度。这些方法有利地应用于包含不同热性质层的半导体晶片，特别是涉及包括绝缘体上硅结构的半导体晶片。

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