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1. 发明授权

US07972939B2 Transfer method with a treatment of a surface to be bonded 有权
标题翻译：转移方法处理待粘合的表面
公开(公告)号：US07972939B2
公开(公告)日：2011-07-05
申请号：US12566036
申请日：2009-09-24
申请人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
发明人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： A method for minimizing or avoiding contamination of a receiving handle wafer during transfer of a thin layer from a donor wafer. This method includes providing a donor wafer and a receiving handle wafer, each having a first surface prepared for bonding and a second surface, with the donor wafer providing a layer of material to be transferred to the receiving handle wafer. Next, at least one of the first surfaces is treated to provide increased bonding energy when the first surfaces are bonded together; the surfaces are then bonded together to form an intermediate multilayer structure; and a portion of the donor wafer is removed to transfer the thin layer to the receiving handle wafer and form the semiconductor structure. This method avoids or minimizes contamination of the second surface of the receiving handle wafer by treating only the first surface of the donor wafer prior to bonding by exposure to a plasma, and by conducting any thermal treatments after plasma activation at a temperature of 300° C. to 500° C. in order to avoid diffusion of impurities into the transfer layer.
摘要翻译：一种用于在从施主晶片传输薄层期间最小化或避免接收处理晶片的污染的方法。该方法包括提供施主晶片和接收处理晶片，每个晶片具有准备用于接合的第一表面和第二表面，施主晶片提供要传送到接收处理晶片的材料层。接下来，当第一表面结合在一起时，处理至少一个第一表面以提供增加的结合能; 然后将表面结合在一起以形成中间多层结构; 并且去除施主晶片的一部分以将薄层转移到接收处理晶片并形成半导体结构。该方法通过在通过暴露于等离子体的接合之前仅处理施主晶片的第一表面，并且在300℃的温度下进行等离子体激活之后进行任何热处理来避免或最小化接收处理晶片的第二表面的污染至500℃，以避免杂质扩散到转移层中。

2. 发明授权

US07892946B2 Device and method for cutting an assembly 有权
标题翻译：用于切割装配体的装置和方法
公开(公告)号：US07892946B2
公开(公告)日：2011-02-22
申请号：US11681349
申请日：2007-03-02
申请人： Olivier Rayssac , Fabrice Letertre
发明人： Olivier Rayssac , Fabrice Letertre
IPC分类号： H01L21/46
CPC分类号： B28D5/0011 , B28D5/0023 , B28D5/0052 , B28D5/0064 , H01L21/2007 , H01L21/76254 , Y10T83/364 , Y10T156/1126 , Y10T156/1184 , Y10T156/1928 , Y10T156/1967 , Y10T156/1972
摘要： A method is presented for cutting an assembly that includes two layers of material having a first surface and a second surface. The method includes providing a weakened interface between the two layers that defines an interface ring about the periphery of the assembly, providing a high-pressure zone at the interface ring, and providing at least one controllable low-pressure zone in the vicinity of at least one of the first surface and the second surface. The technique also includes supplying the high-pressure zone with a controllable high-pressure force, and attacking the interface ring with at least one mechanical force in combination with the high-pressure force to cut the assembly.
摘要翻译：提出了一种用于切割包括具有第一表面和第二表面的两层材料的组件的方法。该方法包括在两个层之间提供弱化的界面，其限定围绕组件的周边的界面环，在界面环处提供高压区，并且在至少附近提供至少一个可控制的低压区第一表面和第二表面之一。该技术还包括向高压区域供应可控的高压力，并且以至少一个机械力与高压力结合来对接口环进行攻击以切割组件。

3. 发明授权

US07615464B2 Transfer method with a treatment of a surface to be bonded 有权
标题翻译：转移方法处理待粘合的表面
公开(公告)号：US07615464B2
公开(公告)日：2009-11-10
申请号：US11138926
申请日：2005-05-25
申请人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
发明人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： A method for minimizing or avoiding contamination of a receiving handle wafer during transfer of a thin layer from a donor wafer. This method includes one step of providing a donor wafer and a receiving handle wafer, each having a first surface prepared for bonding and a second surface, with the donor layer including a zone of weakness that defines a thin layer of donor wafer material to be transferred to the receiving handle wafer. Next, at least one of the first surfaces is treated to provide increased bonding energy when the first surfaces are bonded together; the surfaces are then bonded together to form an intermediate multilayer structure; and the thin layer is transferred to the receiving handle wafer to form a final multilayer structure by detachment at the zone of weakness and removal of remaining material of the donor wafer. This method avoids or minimizes contamination of the second surface of the receiving handle wafer by treating only the first bonding surface of the donor wafer prior to bonding, or by cleaning contamination from the second surface of the handle receiving wafer when present in the intermediate multilayer structure prior to detachment of the thin layer.
摘要翻译：一种用于在从施主晶片传输薄层期间最小化或避免接收处理晶片的污染的方法。该方法包括提供施主晶片和接收处理晶片的一个步骤，每个晶片具有准备用于接合的第一表面和第二表面，供体层包括限定要转移的施主晶片材料薄层的弱点区域到接收处理晶片。接下来，当第一表面结合在一起时，处理至少一个第一表面以提供增加的结合能; 然后将表面结合在一起以形成中间多层结构; 并且薄层被转移到接收处理晶片，以通过在弱化区域分离并且去除施主晶片的剩余材料而形成最终的多层结构。该方法通过仅在接合之前仅处理供体晶片的第一接合表面，或者当存在于中间多层结构中时，通过清洁来自手柄接收晶片的第二表面的污染来避免或最小化接收处理晶片的第二表面的污染在薄层分离之前。

4. 发明授权

US07498245B2 Embrittled substrate and method for making same 有权
标题翻译：底物及其制造方法
公开(公告)号：US07498245B2
公开(公告)日：2009-03-03
申请号：US10276306
申请日：2001-05-29
申请人： Bernard Aspar , Chrystelle Lagahe , Olivier Rayssac , Bruno Ghyselen
发明人： Bernard Aspar , Chrystelle Lagahe , Olivier Rayssac , Bruno Ghyselen
IPC分类号： H01L21/00
CPC分类号： H01L21/76254 , H01L2221/68368
摘要： This invention relates to a substrate (1) weakened by the presence of a micro-cavities zone, the micro-cavities zone (4′) delimiting a thin layer (5) with one face (2) of the substrate (1), some or all of the gaseous species having been eliminated from the micro-cavities (4′).The invention also relates to a process for the production of such a substrate.
摘要翻译：本发明涉及通过存在微腔区而被削弱的衬底（1），用空心衬垫（1）的一个面（2）限定薄层（5）的微腔区（4'），一些或已经从微腔（4'）中去除的全部气态物质。本发明还涉及生产这种基材的方法。

5. 发明授权

US07122095B2 Methods for forming an assembly for transfer of a useful layer 有权
标题翻译：用于形成用于转移有用层的组件的方法
公开(公告)号：US07122095B2
公开(公告)日：2006-10-17
申请号：US10800252
申请日：2004-03-11
申请人： Fabrice Letertre , Olivier Rayssac
发明人： Fabrice Letertre , Olivier Rayssac
IPC分类号： B32B37/26 , B32B38/10
CPC分类号： H01L21/76254 , H01L21/76259 , Y10S156/922 , Y10S438/977 , Y10T156/1064 , Y10T156/108 , Y10T156/11 , Y10T156/1168 , Y10T156/1189 , Y10T156/1989 , Y10T156/1994
摘要： Methods for forming an assembly for transfer of a useful layer are described. In an embodiment, the method includes forming a useful layer on a first support having an interface therebetween, and a residual material on a portion of the first support to form the assembly, and processing the assembly to attenuate any bond between the useful layer and the first support caused by the residual material. An implementation of the method includes processing the assembly to remove residual material. In another variation, processing of the assembly includes forming at least one cut or separating channel between a free surface of the useful layer and the interface to separate the useful layer from contact with the residual material. In yet another variation, processing of the assembly includes forming a peripheral recess so that the residual material does not contact the useful layer.
摘要翻译：描述用于形成用于转移有用层的组件的方法。在一个实施例中，该方法包括在第一支撑件上形成有用层，其上具有界面，以及在第一支撑件的一部分上的残余材料以形成组件，并且处理该组件以衰减有用层和首先由残留材料造成的支撑。该方法的实现包括处理组件以去除残留材料。在另一个实施例中，组件的处理包括在有用层的自由表面和界面之间形成至少一个切割或分离通道，以将有用层与残余材料接触。在又一个变型中，组件的加工包括形成周边凹部，使得残余材料不接触有用层。

6. 发明申请

US20060086949A1 Semiconductor structure and method of making same 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US20060086949A1
公开(公告)日：2006-04-27
申请号：US11299895
申请日：2005-12-13
申请人： Olivier Rayssac , Muriel Martinez , Sephorah Bisson , Lionel Portigliatti
发明人： Olivier Rayssac , Muriel Martinez , Sephorah Bisson , Lionel Portigliatti
IPC分类号： H01L29/74
CPC分类号： H01L21/76259 , H01L21/76251 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure includes a substrate having a surface and being made of a material that provides atypical surface properties to the surface, a bonding layer on the surface of the substrate, and a further layer molecularly bonded to the bonding layer. A method for fabricating such a semiconductor structure includes providing a substrate having a surface and being made of a material that provides atypical surface properties to the surface, providing a bonding layer on the surface of the substrate, smoothing the bonding layer to provide a surface that is capable of molecular bonding, and molecularly bonding a further layer to the bonding layer to form the structure. The atypical surface properties preferably include at least one of a roughness of more than 0.5 nm rms, or a roughness of at least 0.4 nm rms that is difficult to polish, or a chemical composition that is incompatible with molecular bonding.
摘要翻译：半导体结构包括具有表面并由表面提供非典型表面性质的材料制成的基板，在基板的表面上的结合层，以及与粘合层分子结合的另一层。一种制造这种半导体结构的方法包括提供具有表面的基板，并且由表面提供非典型表面特性的材料制成，在基板的表面上提供粘合层，使结合层平滑以提供表面，能够分子结合，并且将另一层分子结合到结合层以形成结构。非典型表面性质优选包括难以抛光的粗糙度大于0.5nm rms或至少0.4nm rms的粗糙度或与分子键不相容的化学组成中的至少一种。

7. 发明授权

US06913971B2 Layer transfer methods 有权
标题翻译：层传输方法
公开(公告)号：US06913971B2
公开(公告)日：2005-07-05
申请号：US10616586
申请日：2003-07-09
申请人： Bernard Aspar , Séverine Bressot , Olivier Rayssac
发明人： Bernard Aspar , Séverine Bressot , Olivier Rayssac
IPC分类号： H01L21/265 , H01L21/02 , H01L21/762 , H01L27/12 , H01L21/8242 , H01L21/336
CPC分类号： H01L21/76259 , H01L21/76254
摘要： Methods for transferring a layer of material from a source substrate having a zone of weakness onto a support substrate to fabricate a composite substrate are described. An implementation includes forming at least one recess in at least one of the source and support substrates, depositing material onto at least one of a front face of the source substrate and a front face of the support substrate, pressing the front faces of the source and support substrates together to bond the substrates, and detaching a transfer layer from the source substrate along the zone of weakness. When the front faces are pressed together, any excess material is received by the recess. The recess may advantageously include an opening in the front face of at least one of the source substrate and the support substrate.
摘要翻译：描述了将材料层从具有弱区的源衬底转移到支撑衬底上以制造复合衬底的方法。一种实施方式包括在源极和支撑衬底中的至少一个中形成至少一个凹槽，将材料沉积在源极衬底的前表面和支撑衬底的前表面中的至少一个上，将源的前表面按压;以及将衬底支撑在一起以结合衬底，以及沿着弱化区域从源衬底分离转移层。当前面被压在一起时，任何多余的材料都被凹槽所接收。该凹部可以有利地包括在源极基板和支撑基板中的至少一个的正面中的开口。

8. 发明申请

US20050112885A1 Process for manufacturing a substrate and associated substrate 有权
标题翻译：用于制造衬底和相关衬底的工艺
公开(公告)号：US20050112885A1
公开(公告)日：2005-05-26
申请号：US10972158
申请日：2004-10-22
申请人： Olivier Rayssac , Fabrice Letertre
发明人： Olivier Rayssac , Fabrice Letertre
IPC分类号： H01L21/02 , H01L21/762 , H01L27/12 , H01L31/18 , H01L33/00 , H01L21/302 , H01L21/461
CPC分类号： H01L31/184 , H01L21/76251 , H01L33/0079 , H01L2221/68363 , Y02E10/544 , Y02P70/521
摘要： A process for producing a substrate is described. The process includes providing an assembly having a first layer weakly bonded to a temporary support at an interface therebetween. At least a portion of the first layer is selectively etched substantially to the interface to create an etched zone. A second layer is then bonded to un-etched portions of the first layer to cover the etched zone and to form a closed cavity. The first layer is detached from the temporary support at the weak bond by providing a raised pressure in the cavity.
摘要翻译：对基板的制造方法进行说明。该方法包括提供一种组件，该组件具有在它们之间的界面处弱结合到临时支撑件的第一层。选择性地蚀刻第一层的至少一部分到界面以产生蚀刻区。然后将第二层粘合到第一层的未蚀刻部分以覆盖蚀刻区并形成闭合腔。通过在空腔中提供升高的压力，将第一层与弱键处的临时支撑件分离。

9. 发明授权

US06204079B1 Selective transfer of elements from one support to another support 有权
标题翻译：元素从一个支持选择性转移到另一个支持
公开(公告)号：US06204079B1
公开(公告)日：2001-03-20
申请号：US09352783
申请日：1999-07-14
申请人： Bernard Aspar , Hubert Moriceau , Olivier Rayssac
发明人： Bernard Aspar , Hubert Moriceau , Olivier Rayssac
IPC分类号： H01L2100
CPC分类号： H01L21/568 , H01L21/6835 , H01L24/29 , H01L24/83 , H01L24/97 , H01L2221/68354 , H01L2221/68368 , H01L2224/83191 , H01L2224/8385 , H01L2224/97 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01033 , H01L2924/01039 , H01L2924/01058 , H01L2924/01072 , H01L2924/01074 , H01L2924/01087 , H01L2924/07802 , H01L2924/12042 , H01L2224/83 , H01L2924/00
摘要： A process for the selective transfer of elements from a transfer support to a reception support, the elements bonding through a first face to the transfer support according to a defined bonding energy, the elements each having a second face configured to contact with the reception support. Elements to be transferred are transferred by applying a bonding energy between them and the reception support that exceeds the bonding energy between their first face and the transfer support. Elements not to be transferred onto the transfer support are retained.
摘要翻译：一种用于将元件从转移支撑件选择性地传送到接收支撑件的过程，所述元件根据限定的结合能将第一面粘接到转印支撑件，每个元件具有被配置为与接收支撑件接触的第二面。通过在它们之间施加超过其第一面和转印支撑体之间的结合能的接收支撑体之间的结合能量来转移待转移的元件。不转移到转印支架上的元素被保留。

10. 发明申请

US20120048906A1 SUBSTRATE CUTTING DEVICE AND METHOD 有权
标题翻译：基板切割装置及方法
公开(公告)号：US20120048906A1
公开(公告)日：2012-03-01
申请号：US13293772
申请日：2011-11-10
申请人： Olivier Rayssac , Fabrice Letertre
发明人： Olivier Rayssac , Fabrice Letertre
IPC分类号： B26F3/00 , B26D3/00
CPC分类号： H01L21/76254 , B28D5/0011 , B28D5/0023 , B28D5/0052 , B28D5/0064 , H01L21/2007 , Y10T29/53274 , Y10T83/0267 , Y10T83/04 , Y10T83/364 , Y10T156/1059 , Y10T156/1184 , Y10T156/1189 , Y10T156/1961 , Y10T156/1967 , Y10T156/1972 , Y10T225/10 , Y10T225/12 , Y10T225/30 , Y10T225/307 , Y10T225/35 , Y10T225/386
摘要： An automatic cutting device is described for cutting an assembly. The assembly includes a material having a weakened zone therein that defines a useful layer and being attached to a source substrate. The cutting device includes a cutting mechanism and a holding and positioning mechanism operatively associated with the cutting mechanism. The holding and positioning mechanism positions the material so that the cutting mechanism detaches the layer from the source substrate along the weakened zone. The cutting device also includes a control mechanism for adjusting at least two different portions of the assembly during detachment of the layer to facilitate a more precise detachment.
摘要翻译：描述了用于切割组件的自动切割装置。组件包括其中具有弱化区的材料，其限定有用层并且附接到源基底。切割装置包括切割机构和与切割机构可操作地相关联的保持和定位机构。保持定位机构定位材料，使得切割机构沿着弱化区域从源基板分离出层。切割装置还包括一个控制机构，用于在分离该层期间调节该组件的至少两个不同部分，以便于更精确的拆卸。

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