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1. 发明授权

US07972939B2 Transfer method with a treatment of a surface to be bonded 有权
标题翻译：转移方法处理待粘合的表面
公开(公告)号：US07972939B2
公开(公告)日：2011-07-05
申请号：US12566036
申请日：2009-09-24
申请人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
发明人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： A method for minimizing or avoiding contamination of a receiving handle wafer during transfer of a thin layer from a donor wafer. This method includes providing a donor wafer and a receiving handle wafer, each having a first surface prepared for bonding and a second surface, with the donor wafer providing a layer of material to be transferred to the receiving handle wafer. Next, at least one of the first surfaces is treated to provide increased bonding energy when the first surfaces are bonded together; the surfaces are then bonded together to form an intermediate multilayer structure; and a portion of the donor wafer is removed to transfer the thin layer to the receiving handle wafer and form the semiconductor structure. This method avoids or minimizes contamination of the second surface of the receiving handle wafer by treating only the first surface of the donor wafer prior to bonding by exposure to a plasma, and by conducting any thermal treatments after plasma activation at a temperature of 300° C. to 500° C. in order to avoid diffusion of impurities into the transfer layer.
摘要翻译：一种用于在从施主晶片传输薄层期间最小化或避免接收处理晶片的污染的方法。该方法包括提供施主晶片和接收处理晶片，每个晶片具有准备用于接合的第一表面和第二表面，施主晶片提供要传送到接收处理晶片的材料层。接下来，当第一表面结合在一起时，处理至少一个第一表面以提供增加的结合能; 然后将表面结合在一起以形成中间多层结构; 并且去除施主晶片的一部分以将薄层转移到接收处理晶片并形成半导体结构。该方法通过在通过暴露于等离子体的接合之前仅处理施主晶片的第一表面，并且在300℃的温度下进行等离子体激活之后进行任何热处理来避免或最小化接收处理晶片的第二表面的污染至500℃，以避免杂质扩散到转移层中。

2. 发明授权

US07615464B2 Transfer method with a treatment of a surface to be bonded 有权
标题翻译：转移方法处理待粘合的表面
公开(公告)号：US07615464B2
公开(公告)日：2009-11-10
申请号：US11138926
申请日：2005-05-25
申请人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
发明人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： A method for minimizing or avoiding contamination of a receiving handle wafer during transfer of a thin layer from a donor wafer. This method includes one step of providing a donor wafer and a receiving handle wafer, each having a first surface prepared for bonding and a second surface, with the donor layer including a zone of weakness that defines a thin layer of donor wafer material to be transferred to the receiving handle wafer. Next, at least one of the first surfaces is treated to provide increased bonding energy when the first surfaces are bonded together; the surfaces are then bonded together to form an intermediate multilayer structure; and the thin layer is transferred to the receiving handle wafer to form a final multilayer structure by detachment at the zone of weakness and removal of remaining material of the donor wafer. This method avoids or minimizes contamination of the second surface of the receiving handle wafer by treating only the first bonding surface of the donor wafer prior to bonding, or by cleaning contamination from the second surface of the handle receiving wafer when present in the intermediate multilayer structure prior to detachment of the thin layer.
摘要翻译：一种用于在从施主晶片传输薄层期间最小化或避免接收处理晶片的污染的方法。该方法包括提供施主晶片和接收处理晶片的一个步骤，每个晶片具有准备用于接合的第一表面和第二表面，供体层包括限定要转移的施主晶片材料薄层的弱点区域到接收处理晶片。接下来，当第一表面结合在一起时，处理至少一个第一表面以提供增加的结合能; 然后将表面结合在一起以形成中间多层结构; 并且薄层被转移到接收处理晶片，以通过在弱化区域分离并且去除施主晶片的剩余材料而形成最终的多层结构。该方法通过仅在接合之前仅处理供体晶片的第一接合表面，或者当存在于中间多层结构中时，通过清洁来自手柄接收晶片的第二表面的污染来避免或最小化接收处理晶片的第二表面的污染在薄层分离之前。

3. 发明申请

US20060270187A1 Transfer method with a treatment of a surface to be bonded 有权
公开(公告)号：US20060270187A1
公开(公告)日：2006-11-30
申请号：US11138926
申请日：2005-05-25
申请人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
发明人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： A method for minimizing or avoiding contamination of a receiving handle wafer during transfer of a thin layer from a donor wafer. This method includes one step of providing a donor wafer and a receiving handle wafer, each having a first surface prepared for bonding and a second surface, with the donor layer including a zone of weakness that defines a thin layer of donor wafer material to be transferred to the receiving handle wafer. Next, at least one of the first surfaces is treated to provide increased bonding energy when the first surfaces are bonded together; the surfaces are then bonded together to form an intermediate multilayer structure; and the thin layer is transferred to the receiving handle wafer to form a final multilayer structure by detachment at the zone of weakness and removal of remaining material of the donor wafer. This method avoids or minimizes contamination of the second surface of the receiving handle wafer by treating only the first bonding surface of the donor wafer prior to bonding, or by cleaning contamination from the second surface of the handle receiving wafer when present in the intermediate multilayer structure prior to detachment of the thin layer.

4. 发明授权

US07892946B2 Device and method for cutting an assembly 有权
标题翻译：用于切割装配体的装置和方法
公开(公告)号：US07892946B2
公开(公告)日：2011-02-22
申请号：US11681349
申请日：2007-03-02
申请人： Olivier Rayssac , Fabrice Letertre
发明人： Olivier Rayssac , Fabrice Letertre
IPC分类号： H01L21/46
CPC分类号： B28D5/0011 , B28D5/0023 , B28D5/0052 , B28D5/0064 , H01L21/2007 , H01L21/76254 , Y10T83/364 , Y10T156/1126 , Y10T156/1184 , Y10T156/1928 , Y10T156/1967 , Y10T156/1972
摘要： A method is presented for cutting an assembly that includes two layers of material having a first surface and a second surface. The method includes providing a weakened interface between the two layers that defines an interface ring about the periphery of the assembly, providing a high-pressure zone at the interface ring, and providing at least one controllable low-pressure zone in the vicinity of at least one of the first surface and the second surface. The technique also includes supplying the high-pressure zone with a controllable high-pressure force, and attacking the interface ring with at least one mechanical force in combination with the high-pressure force to cut the assembly.
摘要翻译：提出了一种用于切割包括具有第一表面和第二表面的两层材料的组件的方法。该方法包括在两个层之间提供弱化的界面，其限定围绕组件的周边的界面环，在界面环处提供高压区，并且在至少附近提供至少一个可控制的低压区第一表面和第二表面之一。该技术还包括向高压区域供应可控的高压力，并且以至少一个机械力与高压力结合来对接口环进行攻击以切割组件。

5. 发明授权

US07122095B2 Methods for forming an assembly for transfer of a useful layer 有权
标题翻译：用于形成用于转移有用层的组件的方法
公开(公告)号：US07122095B2
公开(公告)日：2006-10-17
申请号：US10800252
申请日：2004-03-11
申请人： Fabrice Letertre , Olivier Rayssac
发明人： Fabrice Letertre , Olivier Rayssac
IPC分类号： B32B37/26 , B32B38/10
CPC分类号： H01L21/76254 , H01L21/76259 , Y10S156/922 , Y10S438/977 , Y10T156/1064 , Y10T156/108 , Y10T156/11 , Y10T156/1168 , Y10T156/1189 , Y10T156/1989 , Y10T156/1994
摘要： Methods for forming an assembly for transfer of a useful layer are described. In an embodiment, the method includes forming a useful layer on a first support having an interface therebetween, and a residual material on a portion of the first support to form the assembly, and processing the assembly to attenuate any bond between the useful layer and the first support caused by the residual material. An implementation of the method includes processing the assembly to remove residual material. In another variation, processing of the assembly includes forming at least one cut or separating channel between a free surface of the useful layer and the interface to separate the useful layer from contact with the residual material. In yet another variation, processing of the assembly includes forming a peripheral recess so that the residual material does not contact the useful layer.
摘要翻译：描述用于形成用于转移有用层的组件的方法。在一个实施例中，该方法包括在第一支撑件上形成有用层，其上具有界面，以及在第一支撑件的一部分上的残余材料以形成组件，并且处理该组件以衰减有用层和首先由残留材料造成的支撑。该方法的实现包括处理组件以去除残留材料。在另一个实施例中，组件的处理包括在有用层的自由表面和界面之间形成至少一个切割或分离通道，以将有用层与残余材料接触。在又一个变型中，组件的加工包括形成周边凹部，使得残余材料不接触有用层。

6. 发明申请

US20050112885A1 Process for manufacturing a substrate and associated substrate 有权
标题翻译：用于制造衬底和相关衬底的工艺
公开(公告)号：US20050112885A1
公开(公告)日：2005-05-26
申请号：US10972158
申请日：2004-10-22
申请人： Olivier Rayssac , Fabrice Letertre
发明人： Olivier Rayssac , Fabrice Letertre
IPC分类号： H01L21/02 , H01L21/762 , H01L27/12 , H01L31/18 , H01L33/00 , H01L21/302 , H01L21/461
CPC分类号： H01L31/184 , H01L21/76251 , H01L33/0079 , H01L2221/68363 , Y02E10/544 , Y02P70/521
摘要： A process for producing a substrate is described. The process includes providing an assembly having a first layer weakly bonded to a temporary support at an interface therebetween. At least a portion of the first layer is selectively etched substantially to the interface to create an etched zone. A second layer is then bonded to un-etched portions of the first layer to cover the etched zone and to form a closed cavity. The first layer is detached from the temporary support at the weak bond by providing a raised pressure in the cavity.
摘要翻译：对基板的制造方法进行说明。该方法包括提供一种组件，该组件具有在它们之间的界面处弱结合到临时支撑件的第一层。选择性地蚀刻第一层的至少一部分到界面以产生蚀刻区。然后将第二层粘合到第一层的未蚀刻部分以覆盖蚀刻区并形成闭合腔。通过在空腔中提供升高的压力，将第一层与弱键处的临时支撑件分离。

7. 发明授权

US10002763B2 Fabrication of substrates with a useful layer of monocrystalline semiconductor material 有权
公开(公告)号：US10002763B2
公开(公告)日：2018-06-19
申请号：US13291468
申请日：2011-11-08
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac , Gisèle Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/00 , H01L21/18 , H01L21/762
CPC分类号： H01L21/187 , H01L21/76254
摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing a support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the semiconductor substrate.

8. 发明申请

US20120058621A1 FABRICATION OF SUBSTRATES WITH A USEFUL LAYER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL 有权
标题翻译：具有有用的单晶半导体材料层的基板的制造
公开(公告)号：US20120058621A1
公开(公告)日：2012-03-08
申请号：US13291468
申请日：2011-11-08
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
IPC分类号： H01L21/762
CPC分类号： H01L21/187 , H01L21/76254
摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing an support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the substrate.
摘要翻译：本发明涉及制造半导体衬底的方法。在一个实施方案中，该方法包括提供在其上包括阻挡层的载体，用于防止在外延生长温度下衍生自载体解离的元素的扩散而损失; 在所述阻挡层上提供种子层，其中所述种子层有助于其上的单晶III族氮化物半导体层的外延生长; 在薄种子层上外延生长氮化物工作层; 并移除支撑物以形成基底。

9. 发明授权

US08083115B2 Substrate cutting device and method 有权
标题翻译：基板切割装置及方法
公开(公告)号：US08083115B2
公开(公告)日：2011-12-27
申请号：US11622053
申请日：2007-01-11
申请人： Olivier Rayssac , Fabrice Letertre
发明人： Olivier Rayssac , Fabrice Letertre
IPC分类号： B26F3/00
CPC分类号： H01L21/76254 , B28D5/0011 , B28D5/0023 , B28D5/0052 , B28D5/0064 , H01L21/2007 , Y10T29/53274 , Y10T83/0267 , Y10T83/04 , Y10T83/364 , Y10T156/1059 , Y10T156/1184 , Y10T156/1189 , Y10T156/1961 , Y10T156/1967 , Y10T156/1972 , Y10T225/10 , Y10T225/12 , Y10T225/30 , Y10T225/307 , Y10T225/35 , Y10T225/386
摘要： An automatic cutting device is described for cutting an assembly. The assembly includes a material having a weakened zone therein that defines a useful layer and being attached to a source substrate. The cutting device includes a cutting mechanism and a holding and positioning mechanism operatively associated with the cutting mechanism. The holding and positioning mechanism positions the material so that the cutting mechanism detaches the layer from the source substrate along the weakened zone. The cutting device also includes a control mechanism for adjusting at least two different portions of the assembly during detachment of the layer to facilitate a more precise detachment.
摘要翻译：描述了用于切割组件的自动切割装置。组件包括其中具有弱化区的材料，其限定有用层并且附接到源基底。切割装置包括切割机构和与切割机构可操作地相关联的保持和定位机构。保持定位机构定位材料，使得切割机构沿着弱化区域从源基板分离出层。切割装置还包括一个控制机构，用于在分离该层期间调节该组件的至少两个不同部分，以便于更精确的拆卸。

10. 发明授权

US07888235B2 Fabrication of substrates with a useful layer of monocrystalline semiconductor material 有权
标题翻译：用有用的单晶半导体材料层制造衬底
公开(公告)号：US07888235B2
公开(公告)日：2011-02-15
申请号：US11831484
申请日：2007-07-31
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/185 , H01L21/7605 , H01L29/1608 , Y10S438/967
摘要： A method for fabricating a semiconductor substrate. In an embodiment, this method includes the steps of transferring a seed layer on to a support substrate; and depositing a working layer on the seed layer to form a composite substrate. The seed layer is made of a material that accommodates thermal expansion of the support substrate and of the working layer. The result is a semiconductor substrate that includes the at least one layer of semiconductor material on a support substrate.
摘要翻译：一种制造半导体衬底的方法。在一个实施例中，该方法包括将种子层转移到支撑衬底上的步骤; 以及在种子层上沉积工作层以形成复合衬底。种子层由容纳支撑基板和工作层的热膨胀的材料制成。结果是在支撑衬底上包括至少一层半导体材料的半导体衬底。

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