专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07972939B2 Transfer method with a treatment of a surface to be bonded 有权
标题翻译：转移方法处理待粘合的表面
公开(公告)号：US07972939B2
公开(公告)日：2011-07-05
申请号：US12566036
申请日：2009-09-24
申请人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
发明人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： A method for minimizing or avoiding contamination of a receiving handle wafer during transfer of a thin layer from a donor wafer. This method includes providing a donor wafer and a receiving handle wafer, each having a first surface prepared for bonding and a second surface, with the donor wafer providing a layer of material to be transferred to the receiving handle wafer. Next, at least one of the first surfaces is treated to provide increased bonding energy when the first surfaces are bonded together; the surfaces are then bonded together to form an intermediate multilayer structure; and a portion of the donor wafer is removed to transfer the thin layer to the receiving handle wafer and form the semiconductor structure. This method avoids or minimizes contamination of the second surface of the receiving handle wafer by treating only the first surface of the donor wafer prior to bonding by exposure to a plasma, and by conducting any thermal treatments after plasma activation at a temperature of 300° C. to 500° C. in order to avoid diffusion of impurities into the transfer layer.
摘要翻译：一种用于在从施主晶片传输薄层期间最小化或避免接收处理晶片的污染的方法。该方法包括提供施主晶片和接收处理晶片，每个晶片具有准备用于接合的第一表面和第二表面，施主晶片提供要传送到接收处理晶片的材料层。接下来，当第一表面结合在一起时，处理至少一个第一表面以提供增加的结合能; 然后将表面结合在一起以形成中间多层结构; 并且去除施主晶片的一部分以将薄层转移到接收处理晶片并形成半导体结构。该方法通过在通过暴露于等离子体的接合之前仅处理施主晶片的第一表面，并且在300℃的温度下进行等离子体激活之后进行任何热处理来避免或最小化接收处理晶片的第二表面的污染至500℃，以避免杂质扩散到转移层中。

2. 发明授权

US07615464B2 Transfer method with a treatment of a surface to be bonded 有权
标题翻译：转移方法处理待粘合的表面
公开(公告)号：US07615464B2
公开(公告)日：2009-11-10
申请号：US11138926
申请日：2005-05-25
申请人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
发明人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： A method for minimizing or avoiding contamination of a receiving handle wafer during transfer of a thin layer from a donor wafer. This method includes one step of providing a donor wafer and a receiving handle wafer, each having a first surface prepared for bonding and a second surface, with the donor layer including a zone of weakness that defines a thin layer of donor wafer material to be transferred to the receiving handle wafer. Next, at least one of the first surfaces is treated to provide increased bonding energy when the first surfaces are bonded together; the surfaces are then bonded together to form an intermediate multilayer structure; and the thin layer is transferred to the receiving handle wafer to form a final multilayer structure by detachment at the zone of weakness and removal of remaining material of the donor wafer. This method avoids or minimizes contamination of the second surface of the receiving handle wafer by treating only the first bonding surface of the donor wafer prior to bonding, or by cleaning contamination from the second surface of the handle receiving wafer when present in the intermediate multilayer structure prior to detachment of the thin layer.
摘要翻译：一种用于在从施主晶片传输薄层期间最小化或避免接收处理晶片的污染的方法。该方法包括提供施主晶片和接收处理晶片的一个步骤，每个晶片具有准备用于接合的第一表面和第二表面，供体层包括限定要转移的施主晶片材料薄层的弱点区域到接收处理晶片。接下来，当第一表面结合在一起时，处理至少一个第一表面以提供增加的结合能; 然后将表面结合在一起以形成中间多层结构; 并且薄层被转移到接收处理晶片，以通过在弱化区域分离并且去除施主晶片的剩余材料而形成最终的多层结构。该方法通过仅在接合之前仅处理供体晶片的第一接合表面，或者当存在于中间多层结构中时，通过清洁来自手柄接收晶片的第二表面的污染来避免或最小化接收处理晶片的第二表面的污染在薄层分离之前。

3. 发明申请

US20060270187A1 Transfer method with a treatment of a surface to be bonded 有权
公开(公告)号：US20060270187A1
公开(公告)日：2006-11-30
申请号：US11138926
申请日：2005-05-25
申请人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
发明人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： A method for minimizing or avoiding contamination of a receiving handle wafer during transfer of a thin layer from a donor wafer. This method includes one step of providing a donor wafer and a receiving handle wafer, each having a first surface prepared for bonding and a second surface, with the donor layer including a zone of weakness that defines a thin layer of donor wafer material to be transferred to the receiving handle wafer. Next, at least one of the first surfaces is treated to provide increased bonding energy when the first surfaces are bonded together; the surfaces are then bonded together to form an intermediate multilayer structure; and the thin layer is transferred to the receiving handle wafer to form a final multilayer structure by detachment at the zone of weakness and removal of remaining material of the donor wafer. This method avoids or minimizes contamination of the second surface of the receiving handle wafer by treating only the first bonding surface of the donor wafer prior to bonding, or by cleaning contamination from the second surface of the handle receiving wafer when present in the intermediate multilayer structure prior to detachment of the thin layer.

4. 发明授权

US07235461B2 Method for bonding semiconductor structures together 有权
标题翻译：将半导体结构结合在一起的方法
公开(公告)号：US07235461B2
公开(公告)日：2007-06-26
申请号：US10832267
申请日：2004-04-27
申请人： Christophe Maleville , Corinne Maunand Tussot , Olivier Rayssac , Sébastien Kerdiles , Benjamin Scarfogliere , Hubert Moriceau , Christophe Morales
发明人： Christophe Maleville , Corinne Maunand Tussot , Olivier Rayssac , Sébastien Kerdiles , Benjamin Scarfogliere , Hubert Moriceau , Christophe Morales
IPC分类号： H01L21/46
CPC分类号： H01L21/76259 , H01L21/2007 , H01L21/76251 , H01L21/76254
摘要： A method for bonding semiconductor structures together is described. The technique includes providing a bonding surface on each of two semiconductor structures, brushing a bonding surface of at least one of the structures to remove contaminants and to activate hydroxyl groups on the bonding surface to enhance hydrophilicity and to facilitate molecular bonding of the structures, and joining the bonding surfaces together by molecular bonding to form a composite structure.
摘要翻译：描述将半导体结构结合在一起的方法。该技术包括在两个半导体结构中的每一个上提供接合表面，刷洗至少一个结构的结合表面以去除污染物并激活接合表面上的羟基以增强亲水性并促进结构的分子结合，以及通过分子键合将接合表面结合在一起以形成复合结构。

5. 发明授权

US08802539B2 Charge reservoir structure 有权
标题翻译：蓄水池结构
公开(公告)号：US08802539B2
公开(公告)日：2014-08-12
申请号：US12667990
申请日：2008-07-21
申请人： Frédéric Allibert , Sébastien Kerdiles
发明人： Frédéric Allibert , Sébastien Kerdiles
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L21/02126 , H01L21/02164 , H01L21/02321 , H01L21/0234 , H01L21/02343 , H01L21/28282 , H01L21/31612 , H01L21/3162 , H01L21/31637 , H01L21/31641 , H01L21/31645
摘要： The present invention relates to a process for preparing semiconductor-on-insulator type structures that include a semiconductor layer of a donor substrate, an insulator layer and a receiver substrate. The process includes bonding of the donor substrate onto the receiver substrate, with at least one of the substrates being coated with an insulator layer, and forming at the bonding interface a so-called trapping interface of electrically active traps suitable for retaining charge carriers. The invention also relates to a semiconductor-on-insulator type structure that includes such a trapping interface.
摘要翻译：本发明涉及一种用于制备绝缘体上半导体型结构的方法，其包括施主衬底，绝缘体层和接收衬底的半导体层。该工艺包括将供体衬底接合到接收器衬底上，其中至少一个衬底涂覆有绝缘体层，并且在接合界面处形成适于保持电荷载流子的电活性陷阱的所谓陷阱界面。本发明还涉及一种包括这种俘获接口的绝缘体上半导体型结构。

6. 发明授权

US08658514B2 Method for manufacturing a semiconductor-on-insulator structure having low electrical losses, and corresponding structure 有权
标题翻译：制造具有低电损耗的绝缘体上半导体结构的方法及相应的结构
公开(公告)号：US08658514B2
公开(公告)日：2014-02-25
申请号：US13487066
申请日：2012-06-01
申请人： Patrick Reynaud , Sébastien Kerdiles , Daniel Delprat
发明人： Patrick Reynaud , Sébastien Kerdiles , Daniel Delprat
IPC分类号： H01L21/30
CPC分类号： H01L27/1203 , H01L21/76254 , H01L29/0649
摘要： A manufacturing process for a semiconductor-on-insulator structure having reduced electrical losses and which includes a support substrate made of silicon, an oxide layer and a thin layer of semiconductor material, and a polycrystalline silicon layer interleaved between the support substrate and the oxide layer. The process includes a treatment capable of conferring high resistivity to the support substrate prior to formation of the polycrystalline silicon layer, and then conducting at least one long thermal stabilization on the structure at a temperature not exceeding 950° C. for at least 10 minutes.
摘要翻译：一种具有降低的电损耗的绝缘体上半导体结构的制造方法，其包括由硅，氧化物层和半导体材料薄层制成的支撑衬底，以及在支撑衬底和氧化物层之间交错的多晶硅层。该方法包括能够在形成多晶硅层之前赋予支撑衬底高电阻率的处理，然后在不超过950℃的温度下在该结构上进行至少一个长的热稳定化至少10分钟。

7. 发明申请

US20110140244A1 METHOD FOR ROUTING A CHAMFERED SUBSTRATE 有权
标题翻译：路由衬底的方法
公开(公告)号：US20110140244A1
公开(公告)日：2011-06-16
申请号：US12965135
申请日：2010-12-10
申请人： Walter Schwarzenbach , Aziz Alami-Idrissi , Alexandre Chibko , Sébastien Kerdiles
发明人： Walter Schwarzenbach , Aziz Alami-Idrissi , Alexandre Chibko , Sébastien Kerdiles
IPC分类号： H01L29/06 , H01L21/311
CPC分类号： H01L21/02032 , H01L21/76254
摘要： The invention relates to a method for routing a chamfered substrate, having applications in the field of electronics, optics, or optoelectronics, which involves depositing a layer of a protective material on a peripheral annular zone of the substrate preferably with the aid of a plasma, partially etching the protective material with the aid of a plasma, so as to preserve a protective ring of the deposited material on the front face of the substrate, this ring located at a distance from the edge of the substrate, so as to delimit an accessible peripheral annular zone, etching a thickness of the material constituting the substrate to be routed, preferably with the aid of a plasma that is level with the accessible peripheral annular zone of the substrate, and removing the ring of protective material preferably with the aid of a plasma.
摘要翻译：本发明涉及一种用于布线倒角衬底的方法，其具有在电子学，光学或光电子学领域中的应用，其包括优选借助于等离子体在衬底的外围环形区域上沉积保护材料层，借助于等离子体部分地蚀刻保护材料，以便在衬底的前表面上保留沉积材料的保护环，该环位于离衬底边缘一定距离处，以限定可接近的蚀刻构成要路由的衬底的材料的厚度，优选借助于与衬底的可接近的外围环形区域平齐的等离子体，并且优选地借助于衬底的方法去除保护材料环等离子体。

8. 发明申请

US20100176493A1 METHOD OF SPLITTING A SUBSTRATE 有权
标题翻译：分割基板的方法
公开(公告)号：US20100176493A1
公开(公告)日：2010-07-15
申请号：US12676320
申请日：2008-10-21
申请人： Nadia Ben Mohamed , Sébastien Kerdiles
发明人： Nadia Ben Mohamed , Sébastien Kerdiles
IPC分类号： H01L23/544 , H01L21/02
CPC分类号： H01L21/187 , H01L21/76254
摘要： A process for splitting a semiconductor substrate having an identification notch on its periphery, by creating a weakened zone in the substrate by implanting atomic species into the substrate while the substrate is held in place on a portion of its periphery during the implanting; and splitting the substrate along the weakened zone by placing the held portion of the substrate in a splitting-wave initiation sector while positioning the notch for initiating a splitting wave followed by the propagation of the wave into the substrate. During splitting the notch is positioned so that it is in a quarter of the periphery of the substrate diametrically opposite the sector for initiating the splitting wave or in the quarter of the periphery of the substrate that is centered on the sector.
摘要翻译：一种通过在植入期间将衬底保持在其周边的一部分上保持在适当位置的情况下通过将原子物质注入到衬底中而在衬底中产生弱化区域来分裂其外围具有识别缺口的半导体衬底的工艺; 以及通过将衬底的保持部分放置在分裂波起始扇区中并沿着弱化区域分裂衬底，同时定位用于引发分裂波的陷波，随后将波传播到衬底中。在分割期间，凹口被定位成使得其位于衬底周边的四分之一处，与衬底的圆周方向相反，用于引发分裂波，或者位于以扇形为中心的衬底周边的四分之一部分中。

9. 发明授权

US08476148B2 Method for transferring a layer from a donor substrate onto a handle substrate 有权
标题翻译：用于将层从施主衬底转移到手柄衬底上的方法
公开(公告)号：US08476148B2
公开(公告)日：2013-07-02
申请号：US12712938
申请日：2010-02-25
申请人： Sébastien Kerdiles , Walter Schwarzenbach , Aziz Alami-Idrissi
发明人： Sébastien Kerdiles , Walter Schwarzenbach , Aziz Alami-Idrissi
IPC分类号： H01L21/30 , H01L21/78
CPC分类号： H01L21/30625 , H01L21/02032 , H01L21/76254
摘要： The invention relates to a method for transferring a layer from a donor substrate onto a handle substrate wherein, after detachment, the remainder of the donor substrate is reused. To get rid of undesired protruding edge regions which are due to the chamfered geometry of the substrates, the invention proposes to carry out an additional etching process before detachment occurs.
摘要翻译：本发明涉及一种用于将层从施主衬底转移到手柄衬底上的方法，其中，在剥离之后，再次使用剩余的施主衬底。为了摆脱由于基板的倒角几何形状引起的不期望的突出边缘区域，本发明提出在分离发生之前执行附加的蚀刻工艺。

10. 发明申请

US20120223419A1 METHOD FOR CONTROLLING THE DISTRIBUTION OF STRESSES IN A SEMICONDUCTOR-ON-INSULATOR TYPE STRUCTURE AND CORRESPONDING STRUCTURE 审中-公开
标题翻译：用于控制绝缘子半导体类型结构和相应结构中应力分布的方法
公开(公告)号：US20120223419A1
公开(公告)日：2012-09-06
申请号：US13458817
申请日：2012-04-27
申请人： Sébastien Kerdiles , Patrick Reynaud
发明人： Sébastien Kerdiles , Patrick Reynaud
IPC分类号： H01L29/06 , H01L21/30
CPC分类号： H01L21/76251
摘要： A method for controlling the distribution of the stresses in a structure of the semiconductor-on-insulator type during its manufacturing, which includes a thin layer of semiconducting material on a supporting substrate and an insulating layer present on each of the front and rear faces of the supporting substrate, with the insulating layer on the front face forming at least one portion of a thick buried insulator (BOX) layer. The method includes the adhesive bonding of the thin layer onto the supporting substrate. Prior to this adhesive bonding, the insulating layer on the rear face of the supporting substrate is covered with a distinct material that is capable of withstanding deoxidation. The covering material, in combination with this insulating layer on the rear face of the supporting substrate, at least partly compensates for the stress exerted by the buried insulator (BOX) on the supporting substrate.
摘要翻译：一种用于控制在其制造过程中绝缘体上半导体器件的结构中的应力分布的方法，其包括在支撑衬底上的薄层半导体材料和存在于每个前表面和后表面上的绝缘层支撑衬底，其前表面上的绝缘层形成厚埋层绝缘体（BOX）层的至少一部分。该方法包括将薄层粘合到支撑基底上。在这种粘合之前，支撑基底的背面上的绝缘层被能够耐受脱氧的不同材料覆盖。覆盖材料与支撑基板的后表面上的该绝缘层组合至少部分地补偿由埋层绝缘体（BOX）施加在支撑基板上的应力。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式