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1. 发明授权

US11276782B2 Semiconductor device and manufacturing method of semiconductor device 有权
公开(公告)号：US11276782B2
公开(公告)日：2022-03-15
申请号：US16493491
申请日：2018-03-15
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yoshinobu Asami
IPC分类号： H01L29/786 , H01L29/221 , H01L29/66
摘要： A semiconductor device capable of miniaturization or high integration and manufacture of a semiconductor device are provided. The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator and first and second conductors over the oxide; a third conductor over the second insulator; a fourth conductor over the first conductor; a fifth conductor over the second conductor; a third insulator over the first insulator and the first and second conductors; a fourth insulator over the second and third insulators and the third conductor; and a fifth insulator over the fourth insulator. The first and second conductors are provided to face each other with the second insulator therebetween. The second insulator is provided along an inner wall of an opening provided in the third insulator, facing side surfaces of the first and second conductors, and a top surface of the oxide. The level of a top surface of the third conductor is higher than the levels of top surfaces of the second and third insulators. The fourth insulator is provided along the top surfaces of the second and third insulators and the top surface and a side surface of the third conductor.

2. 发明授权

US11164871B2 Semiconductor device and method for manufacturing semiconductor device 有权
公开(公告)号：US11164871B2
公开(公告)日：2021-11-02
申请号：US16643073
申请日：2018-08-29
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Takanori Matsuzaki , Yoshinobu Asami , Daisuke Matsubayashi , Tatsuya Onuki
IPC分类号： H01L27/105 , H01L27/12 , H01L29/786
摘要： A first transistor, a second transistor, a capacitor, and first to third conductors are included. The first transistor includes a first gate, a source, and a drain. The second transistor includes a second gate, a third gate over the second gate, first and second low-resistance regions, and an oxide sandwiched between the second gate and the third gate. The capacitor includes a first electrode, a second electrode, and an insulator sandwiched therebetween. The first low-resistance region overlaps with the first gate. The first conductor is electrically connected to the first gate and is connected to a bottom surface of the first low-resistance region. The capacitor overlaps with the first low-resistance region. The second conductor is electrically connected to the drain. The third conductor overlaps with the second conductor and is connected to the second conductor and a side surface of the second low-resistance region.

3. 发明授权

US11152513B2 Semiconductor device and method for manufacturing semiconductor device 有权
公开(公告)号：US11152513B2
公开(公告)日：2021-10-19
申请号：US16643453
申请日：2018-08-24
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Shunpei Yamazaki , Yoshinobu Asami , Takahisa Ishiyama , Motomu Kurata , Ryo Tokumaru , Noritaka Ishihara , Yusuke Nonaka
IPC分类号： H01L29/786 , H01L29/22 , H01L29/66
摘要： A semiconductor device with favorable reliability is provided. The semiconductor device includes a first insulator; a second insulator positioned over the first insulator; an oxide positioned over the second insulator; a first conductor and a second conductor positioned apart from each other over the oxide; a third insulator positioned over the oxide, the first conductor, and the second conductor; a third conductor positioned over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned to cover the oxide, the first conductor, the second conductor, the third insulator, and the third conductor; a fifth insulator positioned over the fourth insulator; and a sixth insulator positioned over the fifth insulator. An opening reaching the second insulator is formed in at least part of the fourth insulator; the fifth insulator is in contact with the second insulator through the opening; and the first insulator, the fourth insulator, and the sixth insulator have a lower oxygen permeability than the second insulator.

4. 发明授权

US11024743B2 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US11024743B2
公开(公告)日：2021-06-01
申请号：US16378622
申请日：2019-04-09
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Yoshinobu Asami , Yutaka Okazaki , Satoru Okamoto , Shinya Sasagawa
IPC分类号： H01L29/786 , H01L29/06 , H01L21/02 , H01L29/423 , H01L21/475 , H01L29/66 , H01L21/4757 , H01L21/67 , C23C16/40 , C23C16/455 , H01L27/12
摘要： A semiconductor device includes a first oxide insulating layer over a first insulating layer, an oxide semiconductor layer over the first oxide insulating layer, a source electrode layer and a drain electrode layer over the oxide semiconductor layer, a second insulating layer over the source electrode layer and the drain electrode layer, a second oxide insulating layer over the oxide semiconductor layer, a gate insulating layer over the second oxide insulating layer, a gate electrode layer over the gate insulating layer, and a third insulating layer over the second insulating layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer. A side surface portion of the second insulating layer is in contact with the second oxide insulating layer. The gate electrode layer includes a first region and a second region. The first region has a width larger than that of the second region.

5. 发明授权

US10693012B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US10693012B2
公开(公告)日：2020-06-23
申请号：US15081251
申请日：2016-03-25
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yoshinobu Asami
IPC分类号： H01L29/786 , H01L29/423 , H01L29/66 , H01L21/02 , H01L21/465 , H01L21/3115 , H01L21/469 , H01L27/12
摘要： A semiconductor device with low parasitic capacitance is provided. The semiconductor device includes a first oxide insulator, an oxide semiconductor, a second oxide insulator, a gate insulating layer, a gate electrode layer, source and drain electrode layers and an insulating layer. The oxide semiconductor includes first to fifth regions. The first region overlaps with the source electrode layer. The second region overlaps with the drain electrode layer. The third region overlaps with the gate electrode layer. The fourth region is between the first region and the third region. The fifth region is between the second region and the third region. The fourth region and the fifth region each contain an element N (N is hydrogen, nitrogen, helium, neon, argon, krypton, or xenon). A top surface of the insulating layer is positioned at a lower level than top surfaces of the source and drain electrode layers.

6. 发明授权

US10199508B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US10199508B2
公开(公告)日：2019-02-05
申请号：US15704093
申请日：2017-09-14
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Yoshinobu Asami , Yutaka Okazaki , Motomu Kurata , Katsuaki Tochibayashi , Shinya Sasagawa , Kensuke Yoshizumi , Hideomi Suzawa
IPC分类号： H01L29/49 , H01L29/786 , H01L29/66 , H01L21/4757 , H01L21/47 , H01L21/477 , H01L33/00 , H01L27/12
摘要： A miniaturized transistor, a transistor with low parasitic capacitance, a transistor with high frequency characteristics, or a semiconductor device including the transistor is provided. The semiconductor device includes a first insulator, an oxide semiconductor over the first insulator, a first conductor and a second conductor that are in contact with the oxide semiconductor, a second insulator that is over the first and second conductors and has an opening reaching the oxide semiconductor, a third insulator over the oxide semiconductor and the second insulator, and a fourth conductor over the third insulator. The first conductor includes a first region and a second region. The second conductor includes a third region and a fourth region. The second region faces the third region with the first conductor and the first insulator interposed therebetween. The second region is thinner than the first region. The third region is thinner than the fourth region.

7. 发明授权

US09112086B2 Photoelectric conversion device 有权
标题翻译：光电转换装置
公开(公告)号：US09112086B2
公开(公告)日：2015-08-18
申请号：US13657015
申请日：2012-10-22
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Riho Kataishi , Yoshinobu Asami
IPC分类号： H01L29/10 , H01L31/0232 , H01L31/074 , H01L31/0747
CPC分类号： H01L31/074 , H01L31/0747 , Y02E10/50
摘要： To provide a photoelectric conversion device which has little light loss caused by light absorption in a window layer and has favorable electric characteristics. The photoelectric conversion device includes, between a pair of electrodes, a light-transmitting semiconductor layer which has one conductivity type and serves as a window layer, and a silicon semiconductor substrate having a conductivity type for forming a p-n junction or a silicon semiconductor layer having a conductivity type for forming a p-i-n junction. The light-transmitting semiconductor layer can be formed using an inorganic compound containing, as its main component, an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table. The band gap of the metal oxide is greater than or equal to 2 eV.
摘要翻译：提供一种由窗口层中的光吸收引起的光损耗小且具有良好的电气特性的光电转换装置。光电转换装置在一对电极之间包括具有一种导电类型并用作窗口层的透光半导体层和具有用于形成pn结的导电类型的硅半导体衬底或具有用于形成pn结的硅半导体层或具有用于形成pin结的导电类型。可以使用含有属于周期表第4〜8族的金属的氧化物作为其主要成分的无机化合物来形成透光性半导体层。金属氧化物的带隙大于或等于2eV。

8. 发明授权

US08804404B2 Memory device and manufacturing method the same 有权
标题翻译：存储器件和制造方法相同
公开(公告)号：US08804404B2
公开(公告)日：2014-08-12
申请号：US14013492
申请日：2013-08-29
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yoshinobu Asami , Tamae Takano , Masayuki Sakakura , Ryoji Nomura , Shunpei Yamazaki
IPC分类号： G11C11/34 , G11C11/00 , H01L29/12
CPC分类号： H01L27/1082 , B82Y10/00 , G11C11/34 , G11C13/0014 , G11C2213/79 , H01L23/4828 , H01L27/105 , H01L27/1203 , H01L27/1244 , H01L27/28 , H01L29/458 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
摘要翻译：可以在没有接触的情况下发送和接收数据的半导体器件部分地受到一些铁路通行证，电子货币卡等的普及; 然而，提供便宜的半导体器件以进一步普及是主要的任务。鉴于上述现有条件，本发明的半导体器件包括具有用于提供便宜的半导体器件的简单结构的存储器及其制造方法。包括在存储器中的存储元件包括含有有机化合物的层，并且将设置在存储元件部分中的TFT的源电极或漏电极用作形成存储元件的位线的导电层。

9. 发明申请

US20130214271A1 P-Type Semiconductor Material and Semiconductor Device 有权
公开(公告)号：US20130214271A1
公开(公告)日：2013-08-22
申请号：US13768233
申请日：2013-02-15
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yoshinobu Asami , Riho Kataishi , Erumu Kikuchi
IPC分类号： H01L29/20
CPC分类号： H01L29/267 , H01L29/20 , H01L29/7869 , H01L29/861 , H01L31/0328 , H01L31/074 , Y02E10/50
摘要： An oxide semiconductor material having p-type conductivity and a semiconductor device using the oxide semiconductor material are provided. The oxide semiconductor material having p-type conductivity can be provided using a molybdenum oxide material containing molybdenum oxide (MoOy (2

10. 发明授权

US11469330B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US11469330B2
公开(公告)日：2022-10-11
申请号：US16888904
申请日：2020-06-01
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yoshinobu Asami
IPC分类号： H01L29/786 , H01L29/423 , H01L29/66 , H01L21/02 , H01L21/465 , H01L21/3115 , H01L21/469 , H01L27/12
摘要： A semiconductor device with low parasitic capacitance is provided. The semiconductor device includes a first oxide insulator, an oxide semiconductor, a second oxide insulator, a gate insulating layer, a gate electrode layer, source and drain electrode layers and an insulating layer. The oxide semiconductor includes first to fifth regions. The first region overlaps with the source electrode layer. The second region overlaps with the drain electrode layer. The third region overlaps with the gate electrode layer. The fourth region is between the first region and the third region. The fifth region is between the second region and the third region. The fourth region and the fifth region each contain an element N (N is hydrogen, nitrogen, helium, neon, argon, krypton, or xenon). A top surface of the insulating layer is positioned at a lower level than top surfaces of the source and drain electrode layers.

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