专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09410266B2 Process for producing multicrystalline silicon ingots by the induction method, and apparatus for carrying out the same 有权
标题翻译：通过感应方法制造多晶硅锭的方法，以及用于进行该方法的装置
公开(公告)号：US09410266B2
公开(公告)日：2016-08-09
申请号：US14583141
申请日：2014-12-25
申请人： Sergii Beringov , Volodymyr Onischenko , Anatoliy Shkulkov , Yurii Cherpak , Sergii Pozigun , Stepan Marchenko , Andrii Shevchuk
发明人： Sergii Beringov , Volodymyr Onischenko , Anatoliy Shkulkov , Yurii Cherpak , Sergii Pozigun , Stepan Marchenko , Andrii Shevchuk
IPC分类号： C30B15/08 , C30B28/06 , C30B29/06 , C30B30/04 , C30B35/00 , C30B11/00
CPC分类号： C30B28/06 , B22D27/02 , B22D27/045 , C01B33/037 , C30B11/003 , C30B11/006 , C30B29/06 , C30B30/04 , C30B35/005
摘要： An apparatus and continuous stable process for producing multicrystalline silicon ingots with large cross-sections by an induction method, by maintaining surface temperature of the ingot at the output of the crucible within the range of 900-1150° C., and by heating the ingot at the output of the upper zone of the controlled cooling compartment to a temperature of 1200-1250° C., followed by cooling of the ingot at a rate of no more than 10° C./cm.
摘要翻译：通过感应方法生产具有大截面的多晶硅锭的装置和连续稳定的方法，通过将坩埚的输出处的晶锭的表面温度保持在900-1150℃的范围内，并且通过加热锭在受控冷却室的上部区域的输出处于1200-1250℃的温度下，然后以不超过10℃/ cm的速度冷却锭。

2. 发明申请

US20110247364A1 PROCESS FOR PRODUCING MULTICRYSTALLINE SILICON INGOTS BY THE INDUCTION METHOD AND APPARATUS FOR CARRYING OUT THE SAME 审中-公开
标题翻译：通过感应方法生产多晶硅素体的方法和装置的制造方法
公开(公告)号：US20110247364A1
公开(公告)日：2011-10-13
申请号：US13139612
申请日：2009-12-14
申请人： Sergii Beringov , Volodymyr Onischenko , Anatoliy Shkulkov , Yurii Cherpak , Sergii Pozigun , Stepan Marchenko , Andrii Shevchuk
发明人： Sergii Beringov , Volodymyr Onischenko , Anatoliy Shkulkov , Yurii Cherpak , Sergii Pozigun , Stepan Marchenko , Andrii Shevchuk
IPC分类号： C30B35/00 , C30B30/00 , C01B33/02
CPC分类号： C30B28/06 , B22D27/02 , B22D27/045 , C01B33/037 , C30B11/003 , C30B11/006 , C30B29/06 , C30B30/04 , C30B35/005
摘要： This invention is related to obtaining multicrystalline silicon using induction method. The method comprises melting and casting of a pool in the form of a melting space, crystallization of a multicrystalline silicon ingot, and its controlled cooling by means of a heating equipment set. After the pool melting and casting is terminated, crystallization of the remaining part of the multicrystalline silicon ingot is finished along with the controlled cooling of the whole ingot; the ingot is then removed together with a movable bottom and the heating equipment set; and its controlled cooling continues. At the same time, another heating equipment set is supplied to the vacated place with another movable bottom; then the new movable bottom is moved into the water-cooled crucible; and the process steps are repeated in order to produce the next ingot. The method is implemented using an apparatus that additionally includes a platform installed in the controlled cooling compartment and designed to revolve on its axis. This platform holds at least two heating equipment sets. The proposed invention ensures increased output of multicrystalline silicon suitable for production of solar cells.
摘要翻译：本发明涉及使用感应方法获得多晶硅。该方法包括以熔融空间的形式熔化和浇铸池，多晶硅锭的结晶以及借助于加热设备组的受控冷却。在池熔化和铸造终止之后，多晶硅锭的剩余部分的结晶随着整个锭的受控冷却而结束; 然后将锭与可移动底部和加热设备组一起移除; 并且其受控制的冷却继续。同时，另一个加热设备组用另一个可移动的底部供应到空置的地方; 然后将新的可移动底部移入水冷坩埚中; 并且重复处理步骤以便生产下一个锭。该方法使用另外包括安装在受控冷却室中并被设计成围绕其轴线旋转的平台的装置来实现。该平台至少拥有两台加热设备。所提出的发明确保了适合于生产太阳能电池的多晶硅的增加的输出。

3. 发明授权

US09284661B2 Process for the production of multicrystalline silicon ingots by controlling the position of the melt surface during growth by the induction method 有权
标题翻译：通过感应法在生长过程中控制熔体表面的位置来生产多晶硅锭的方法
公开(公告)号：US09284661B2
公开(公告)日：2016-03-15
申请号：US13390279
申请日：2010-08-20
申请人： Sergii Beringov , Volodymyr Onischenko , Anatoly Shkulkov , Yuriy Cherpak , Sergii Pozigun , Stepan Marchenko , Andrii Shevchuk
发明人： Sergii Beringov , Volodymyr Onischenko , Anatoly Shkulkov , Yuriy Cherpak , Sergii Pozigun , Stepan Marchenko , Andrii Shevchuk
IPC分类号： C30B15/08 , C30B29/06 , C30B11/00
CPC分类号： C30B29/06 , C30B11/001 , C30B11/003 , C30B11/006
摘要： A process for the production of multicrystalline silicon ingots by the induction method comprises charging a silicon raw material into the melting chamber of a cooled crucible enveloped by an inductor, forming a melt surface, and melting, wherein the mass rate of charging the silicon raw material and the speed of pulling the ingot are set such that provide for the melt surface position below the upper plane of the inductor but not lower than ⅓ of the height thereof and the melt surface is kept at the same level. In doing this the melt surface position is kept at the same level by maintaining one of the output parameters of the inductor feed within a predetermined range. The process provides for casting multicrystalline silicon ingots suitable for solar cell fabrication and it is notable for higher efficiency and lower specific energy consumption.
摘要翻译：通过感应方法生产多晶硅锭的方法包括将硅原料装入到由电感器包围的冷却的坩埚的熔化室中，形成熔体表面和熔化，其中硅原料的质量率并且将锭的速度设定为使得熔体表面位置在电感器的上平面下方但不低于其高度的1/3，并且熔体表面保持在相同的水平。在这样做时，通过将电感器馈送的输出参数之一保持在预定范围内，使熔体表面位置保持在相同的水平。该方法提供了适用于太阳能电池制造的多晶硅锭，并且其具有更高的效率和更低的比能量消耗。

4. 发明申请

US20120174630A1 APPARATUS FOR PRODUCING MULTICRYSTALLINE SILICON INGOTS BY INDUCTION METHOD 有权
标题翻译：通过诱导方法生产多晶硅的装置
公开(公告)号：US20120174630A1
公开(公告)日：2012-07-12
申请号：US13386197
申请日：2010-07-19
申请人： Sergii Beringov , Volodymyr Onischenko , Anatoly Shkulkov , Yuriy Cherpak , Sergii Pozigun , Stepan Marchenko , Bogdan Chepurnyy
发明人： Sergii Beringov , Volodymyr Onischenko , Anatoly Shkulkov , Yuriy Cherpak , Sergii Pozigun , Stepan Marchenko , Bogdan Chepurnyy
IPC分类号： C03B17/04
CPC分类号： C30B29/06 , C30B11/001 , C30B11/003 , C30B13/14 , C30B28/06 , Y10S117/901 , Y10T117/10 , Y10T117/1088
摘要： An apparatus for producing multicrystalline silicon ingots by the induction method comprises an enclosure, which includes means for start-up heating of silicon and a cooled crucible enveloped by an inductor. The crucible has a movable bottom and four walls consisting of sections spaced apart by vertically extending slots, means for moving the movable bottom, and a controlled cooling compartment arranged under the cooled crucible. The inside face of the crucible defines a melting chamber of a rectangular or square cross-section. The walls of the cooled crucible extend outwards at least from the inductor toward the lowest portion of the cooled crucible to thereby expand the melting chamber, and the angle β of expanding the melting chamber is defined by the equation β=arctg[2·(k−1.35·10 3·b)/d], where d is the dimension of the smaller side of the rectangle or of the side of the square of the cross-section of the melting chamber at the inducer level, b is the dimension of the adjoining side of the cross-section of the melting chamber at the inducer level, k is an empirical coefficient, which is 1.5 to 2. The apparatus makes it possible to decrease silicon melt spills and to increase the quality of multicrystalline silicon thus produced.
摘要翻译：用于通过感应方法生产多晶硅锭的装置包括：外壳，其包括用于启动加热硅的装置和由电感器包围的冷却的坩埚。坩埚具有可移动的底部和四个壁，其由垂直延伸的槽间隔开的部分，用于移动可移动底部的装置和布置在冷却的坩埚下方的受控制的冷却室组成。坩埚的内表面限定了矩形或正方形横截面的熔化室。冷却的坩埚的壁至少从电感器向冷却坩埚的最低部分向外延伸，从而使熔化室膨胀，并且角度＆扩展熔化室的方法由方程＆bgr = _ arctg [2·（k-1.35·10 3·b）/ d]定义，其中d是长方形或正方形的一侧的尺寸在熔化室处于诱导级的剖面的横截面为b，熔化室横截面的相邻侧的尺寸为导流级，k为经验系数，为1.5〜2。可以减少硅熔体溢出并提高由此产生的多晶硅的质量。

5. 发明授权

US09039835B2 Apparatus for producing multicrystalline silicon ingots by induction method 有权
标题翻译：用感应法生产多晶硅锭的装置
公开(公告)号：US09039835B2
公开(公告)日：2015-05-26
申请号：US13386197
申请日：2010-07-19
申请人： Sergii Beringov , Volodymyr Onischenko , Anatoly Shkulkov , Yuriy Cherpak , Sergii Pozigun , Stepan Marchenko , Bogdan Chepurnyy
发明人： Sergii Beringov , Volodymyr Onischenko , Anatoly Shkulkov , Yuriy Cherpak , Sergii Pozigun , Stepan Marchenko , Bogdan Chepurnyy
IPC分类号： C30B13/14 , C30B15/10 , C30B35/00 , C30B29/06 , C30B11/00 , C30B28/06
CPC分类号： C30B29/06 , C30B11/001 , C30B11/003 , C30B13/14 , C30B28/06 , Y10S117/901 , Y10T117/10 , Y10T117/1088
摘要： An apparatus for producing multicrystalline silicon ingots by the induction method comprises an enclosure, which includes means for start-up heating of silicon and a cooled crucible enveloped by an inductor. The crucible has a movable bottom and four walls consisting of sections spaced apart by vertically extending slots, means for moving the movable bottom, and a controlled cooling compartment arranged under the cooled crucible. The inside face of the crucible defines a melting chamber of a rectangular or square cross-section. The walls of the cooled crucible extend outwards at least from the inductor toward the lowest portion of the cooled crucible to thereby expand the melting chamber, and the angle β of expanding the melting chamber is defined by the equation β=arctg[2·(k−1.35·10 3·b)/d], where d is the dimension of the smaller side of the rectangle or of the side of the square of the cross-section of the melting chamber at the inducer level, b is the dimension of the adjoining side of the cross-section of the melting chamber at the inducer level, k is an empirical coefficient, which is 1.5 to 2. The apparatus makes it possible to decrease silicon melt spills and to increase the quality of multicrystalline silicon thus produced.
摘要翻译：用于通过感应方法生产多晶硅锭的装置包括：外壳，其包括用于启动加热硅的装置和由电感器包围的冷却的坩埚。坩埚具有可移动的底部和四个壁，其由垂直延伸的槽间隔开的部分，用于移动可移动底部的装置和布置在冷却的坩埚下方的受控制的冷却室组成。坩埚的内表面限定了矩形或正方形横截面的熔化室。冷却的坩埚的壁至少从电感器向冷却坩埚的最低部分向外延伸，从而使熔化室膨胀，并且角度＆扩展熔化室的方法由方程＆bgr = _ arctg [2·（k-1.35·10 3·b）/ d]定义，其中d是长方形或正方形的一侧的尺寸在熔化室处于诱导级的剖面的横截面为b，熔化室横截面的相邻侧的尺寸为导流级，k为经验系数，为1.5〜2。可以减少硅熔体溢出并提高由此产生的多晶硅的质量。

6. 发明申请

US20120137473A1 PROCESS FOR PRODUCTION OF MULTICRYSTALLINE SILICON INGOTS BY INDUCTION METHOD 有权
标题翻译：通过诱导方法生产多晶硅的工艺
公开(公告)号：US20120137473A1
公开(公告)日：2012-06-07
申请号：US13390279
申请日：2010-08-20
申请人： Sergil Beringov , Volodymyr Onischenko , Anatoly Shkulkov , Yuriy Cherpak , Sergii Pozigun , Stepan Marchenko , Andrii Shevchuk
发明人： Sergil Beringov , Volodymyr Onischenko , Anatoly Shkulkov , Yuriy Cherpak , Sergii Pozigun , Stepan Marchenko , Andrii Shevchuk
IPC分类号： B01D9/00
CPC分类号： C30B29/06 , C30B11/001 , C30B11/003 , C30B11/006
摘要： A process for the production of multicrystalline silicon ingots by the induction method comprises charging a silicon raw material into the melting chamber of a cooled crucible enveloped by an inductor, forming a melt surface, and melting, wherein the mass rate of charging the silicon raw material and the speed of pulling the ingot are set such that provide for the melt surface position below the upper plane of the inductor but not lower than ⅓ of the height thereof and the melt surface is kept at the same level. In doing this the melt surface position is kept at the same level by maintaining one of the output parameters of the inductor feed within a predetermined range. The process provides for casting multicrystalline silicon ingots suitable for solar cell fabrication and it is notable for higher efficiency and lower specific energy consumption.
摘要翻译：通过感应方法生产多晶硅锭的方法包括将硅原料装入到由电感器包围的冷却的坩埚的熔化室中，形成熔体表面和熔化，其中硅原料的质量率并且将锭的速度设定为使得熔体表面位置在电感器的上平面下方但不低于其高度的1/3，并且熔体表面保持在相同的水平。在这样做时，通过将电感器馈送的输出参数之一保持在预定范围内，使熔体表面位置保持在相同的水平。该方法提供了适用于太阳能电池制造的多晶硅锭，并且其具有更高的效率和更低的比能量消耗。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式