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1. 发明授权

US08035153B2 Self-aligned patterning method by using non-conformal film and etch for flash memory and other semiconductor applications 有权
标题翻译：通过使用非保形膜和蚀刻用于闪存和其他半导体应用的自对准图案化方法
公开(公告)号：US08035153B2
公开(公告)日：2011-10-11
申请号：US12788177
申请日：2010-05-26
申请人： Shenqing Fang , Jihwan Choi , Calvin Gabriel , Fei Wang , Angela Hui , Alexander Nickel , Zubin Patel , Phillip Jones , Mark Chang , Minh-Van Ngo
发明人： Shenqing Fang , Jihwan Choi , Calvin Gabriel , Fei Wang , Angela Hui , Alexander Nickel , Zubin Patel , Phillip Jones , Mark Chang , Minh-Van Ngo
IPC分类号： H01L29/788
CPC分类号： H01L21/28282 , H01L27/11568
摘要： A method for fabricating a memory device with a self-aligned trap layer which is optimized for scaling is disclosed. In the present invention, a non-conformal film is deposited over the charge trapping layer to form a thick film on top of the core source/drain region and a pinch off and a void or a narrow channel at the top of the STI trench. An etch is performed on the non-conformal film to open pinch-off or widen the narrow channel in the non-conformal. The trapping layer is then completely or partially etched between the core cells. The non-conformal film is removed. And a top oxide is formed. The top oxide converts the remaining trap layer to oxide if the trapping layer is partially etched and thus isolate the trap layer.
摘要翻译：公开了一种用于制造具有自对准陷阱层的存储器件的方法，其被优化用于结垢。在本发明中，在电荷俘获层上沉积非保形膜，以在芯源极/漏极区域的顶部形成厚膜，并在STI沟槽顶部形成夹断和空隙或窄通道。在非保形膜上进行蚀刻以打开夹断或在非保形状态下加宽窄通道。然后在核心单元之间完全或部分蚀刻捕获层。去除非保形膜。并形成顶部氧化物。如果捕获层被部分蚀刻，则顶部氧化物将剩余的陷阱层转化为氧化物，并且因此隔离陷阱层。

2. 发明申请

US20100230743A1 SELF-ALIGNED PATTERNING METHOD BY USING NON-CONFORMAL FILM AND ETCH FOR FLASH MEMORY AND OTHER SEMICONDUCTOR APPLICATIONS 有权
标题翻译：通过使用非一致性膜和闪存存储器和其他半导体应用的自对准图形方法
公开(公告)号：US20100230743A1
公开(公告)日：2010-09-16
申请号：US12788177
申请日：2010-05-26
申请人： Shenqing Fang , Jihwan Choi , Calvin Gabriel , Fei Wang , Angela Hui , Alexander Nickel , Zubin Patel , Phillip Jones , Mark Chang , Minh-Van Ngo
发明人： Shenqing Fang , Jihwan Choi , Calvin Gabriel , Fei Wang , Angela Hui , Alexander Nickel , Zubin Patel , Phillip Jones , Mark Chang , Minh-Van Ngo
IPC分类号： H01L29/792
CPC分类号： H01L21/28282 , H01L27/11568
摘要： A method for fabricating a memory device with a self-aligned trap layer which is optimized for scaling is disclosed. In the present invention, a non-conformal film is deposited over the charge trapping layer to form a thick film on top of the core source/drain region and a pinch off and a void or a narrow channel at the top of the STI trench. An etch is performed on the non-conformal film to open pinch-off or widen the narrow channel in the non-conformal. The trapping layer is then completely or partially etched between the core cells. The non-conformal film is removed. And a top oxide is formed. The top oxide converts the remaining trap layer to oxide if the trapping layer is partially etched and thus isolate the trap layer.
摘要翻译：公开了一种用于制造具有自对准陷阱层的存储器件的方法，其被优化用于缩放。在本发明中，在电荷俘获层上沉积非保形膜，以在芯源极/漏极区域的顶部形成厚膜，并在STI沟槽顶部形成夹断和空隙或窄通道。在非保形膜上进行蚀刻以打开夹断或在非保形状态下加宽窄通道。然后在核心单元之间完全或部分蚀刻捕获层。去除非保形膜。并形成顶部氧化物。如果捕获层被部分蚀刻，则顶部氧化物将剩余的陷阱层转化为氧化物，并且因此隔离陷阱层。

3. 发明授权

US07732276B2 Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductor applications 有权
标题翻译：通过使用非保形膜的自对准图案化方法，并对闪存和其他半导体应用进行回蚀
公开(公告)号：US07732276B2
公开(公告)日：2010-06-08
申请号：US11796582
申请日：2007-04-26
申请人： Shenqing Fang , Jihwan Choi , Calvin Gabriel , Fei Wang , Angela Hui , Alexander Nickel , Zubin Patel , Phillip Jones , Mark Chang , Minh-Van Ngo
发明人： Shenqing Fang , Jihwan Choi , Calvin Gabriel , Fei Wang , Angela Hui , Alexander Nickel , Zubin Patel , Phillip Jones , Mark Chang , Minh-Van Ngo
IPC分类号： H01L21/336
CPC分类号： H01L21/28282 , H01L27/11568
摘要： A method for fabricating a memory device with a self-aligned trap layer which is optimized for scaling is disclosed. In the present invention, a non-conformal film is deposited over the charge trapping layer to form a thick film on top of the core source/drain region and a pinch off and a void or a narrow channel at the top of the STI trench. An etch is performed on the non-conformal film to open pinch-off or widen the narrow channel in the non-conformal. The trapping layer is then completely or partially etched between the core cells. The non-conformal film is removed. And a top oxide is formed. The top oxide converts the remaining trap layer to oxide if the trapping layer is partially etched and thus isolate the trap layer.
摘要翻译：公开了一种用于制造具有自对准陷阱层的存储器件的方法，其被优化用于缩放。在本发明中，在电荷俘获层上沉积非保形膜，以在芯源极/漏极区域的顶部形成厚膜，并在STI沟槽顶部形成夹断和空隙或窄通道。在非保形膜上进行蚀刻以打开夹断或在非保形状态下加宽窄通道。然后在核心单元之间完全或部分蚀刻捕获层。去除非保形膜。并形成顶部氧化物。如果捕获层被部分蚀刻，则顶部氧化物将剩余的陷阱层转化为氧化物，并且因此隔离陷阱层。

4. 发明申请

US20060223305A1 Etch process for CD reduction of arc material 有权
标题翻译：电弧材料的CD还原蚀刻工艺
公开(公告)号：US20060223305A1
公开(公告)日：2006-10-05
申请号：US11098049
申请日：2005-04-04
申请人： Phillip Jones , Mark Chang , Scott Bell
发明人： Phillip Jones , Mark Chang , Scott Bell
IPC分类号： H01L21/4763
CPC分类号： H01L21/32139 , H01L21/3088 , H01L21/31144
摘要： A method of reducing critical dimensions of a feature in a anti-reflective coating layer structure can utilize a polymerizing agent. The anti-reflective coating structure can be utilized to form various integrated circuit structures. The anti-reflective coating can be utilized to form gate stacks comprised of polysilicon and a dielectric layer, conductive lines, or other IC structure. The polymerizing agent can include carbon, hydrogen and fluorine.
摘要翻译：降低抗反射涂层结构中的特征的关键尺寸的方法可以利用聚合剂。抗反射涂层结构可用于形成各种集成电路结构。抗反射涂层可用于形成由多晶硅和电介质层，导电线或其它IC结构组成的栅叠层。聚合剂可以包括碳，氢和氟。

5. 发明授权

US07549640B1 Board game 失效
标题翻译：棋盘游戏
公开(公告)号：US07549640B1
公开(公告)日：2009-06-23
申请号：US11739469
申请日：2007-04-24
申请人： Lenworth N. Evans , Phillip Jones
发明人： Lenworth N. Evans , Phillip Jones
IPC分类号： A63F3/00
CPC分类号： A63F3/00
摘要： A board game of chance and skill using a game board, a pair of dice, and tokens. The player throwing the highest initial roll begins game play. Rolling one six or two sixes allows movement of one token or two tokens, respectively, from a home base space marked with a country name to a starting space marked “GATE” and along a clockwise path of movement to a finish space marked “PARADISE”. A token is returned to home base space if another player's token lands on the same game space. A blockade, which may not be passed by other players' tokens until such blockade is broken, is created when two tokens of one player are placed on the same game space. An exact roll is required to enter a finish space. The first player with all tokens in his finish space is the winner.
摘要翻译：使用游戏板，一对骰子和令牌的机会和技能的棋盘游戏。投掷最高初赛的玩家开始玩游戏。滚动六六个或六个六个允许一个令牌或两个令牌分别从标记有国家名称的家庭空间移动到标记为“GATE”的起始空间，并沿顺时针方向移动到标有“PARADISE”的完成空间。如果另一个玩家的标记位于相同的游戏空间，则令牌将返回到基地空间。当一个玩家的两个令牌被放置在同一个游戏空间时，封锁可能不会被其他玩家的令牌通过，直到这种封锁被破坏为止。需要确切的滚动才能输入完成空间。获胜者是第一名拥有所有令牌的球员。

6. 发明申请

US20050257010A1 Method and system for migrating memory segments 有权
标题翻译：用于迁移内存段的方法和系统
公开(公告)号：US20050257010A1
公开(公告)日：2005-11-17
申请号：US11066038
申请日：2005-02-25
申请人： Phillip Jones , Paras Shah , James Yu , William Walker , Kenneth Jansen , Vasileios Balabanos , Andrew Olsen
发明人： Phillip Jones , Paras Shah , James Yu , William Walker , Kenneth Jansen , Vasileios Balabanos , Andrew Olsen
IPC分类号： G06F12/00 , G06F12/08
CPC分类号： G06F12/0813 , G06F2212/2542
摘要： A system comprises a plurality of nodes coupled together via a switching device. Each node comprises a processor coupled to a memory. Migration logic in the switching device is configured to migrate segments of each memory to the switching device.
摘要翻译：系统包括通过交换设备耦合在一起的多个节点。每个节点包括耦合到存储器的处理器。交换设备中的迁移逻辑被配置为将每个存储器的段迁移到交换设备。

7. 发明授权

US07498222B1 Enhanced etching of a high dielectric constant layer 有权
标题翻译：增强蚀刻高介电常数层
公开(公告)号：US07498222B1
公开(公告)日：2009-03-03
申请号：US11371024
申请日：2006-03-09
申请人： John C. Foster , Scott Bell , Allison Holbrook , Simon S. Chan , Phillip Jones
发明人： John C. Foster , Scott Bell , Allison Holbrook , Simon S. Chan , Phillip Jones
IPC分类号： H01L21/336
CPC分类号： H01L29/792 , H01L29/513 , H01L29/66833
摘要： A high K layer, such as aluminum oxide or hafnium oxide, may be formed with a deposition process that uses an ion implantation to damage portions of the high K material that are to be later etched. More particularly, in one implementation, a semiconductor device is manufactured by forming a first dielectric over a substrate, forming a charge storage element over the first dielectric, forming a second dielectric above the charge storage element, implantation ions into select portions of the second dielectric, and etching the ion implanted select portions of the second dielectric.
摘要翻译：可以用沉积工艺形成高K层，例如氧化铝或氧化铪，所述沉积工艺使用离子注入来破坏将被蚀刻的高K材料的部分。更具体地，在一个实施方式中，通过在衬底上形成第一电介质来形成半导体器件，在第一电介质上形成电荷存储元件，在电荷存储元件上形成第二电介质，将离子注入第二电介质的选择部分并蚀刻第二电介质的离子注入选择部分。

8. 发明申请

US20070061520A1 Techniques for reducing castouts in a snoop filter 有权
标题翻译：用于减少窥探过滤器中的铸件的技术
公开(公告)号：US20070061520A1
公开(公告)日：2007-03-15
申请号：US11225937
申请日：2005-09-13
申请人： Phillip Jones , Kourosh Gharachorloo
发明人： Phillip Jones , Kourosh Gharachorloo
IPC分类号： G06F13/28
CPC分类号： G06F12/082 , G06F12/0831
摘要： Method and apparatus for reducing castouts in a snoop filter. More specifically, there is provided a system comprising a plurality of buses, one or more processors coupled to each of the plurality of buses and a snoop filter. The snoop filter configured to eliminate unnecessary snoops of the plurality of buses, and further configured to track requests from the one or more processors only if tracking the request does not result in a castout penalty
摘要翻译：用于减少窥探过滤器中的铸件的方法和装置。更具体地，提供了一种包括多个总线，耦合到多个总线中的每一个的一个或多个处理器和窥探滤波器的系统。所述窥探过滤器被配置为消除所述多个总线中的不必要的窥探，并且还被配置为仅在跟踪所述请求不导致停顿罚分时跟踪来自所述一个或多个处理器的请求

9. 发明授权

US5715627A Natural rock fishing lure 失效
标题翻译：天然岩石钓鱼诱惑
公开(公告)号：US5715627A
公开(公告)日：1998-02-10
申请号：US548008
申请日：1995-10-25
申请人： Phillip Jones
发明人： Phillip Jones
IPC分类号： A01K85/00
CPC分类号： A01K85/00
摘要： A fishing lure comprises a natural stone as a lure body and has fracture surfaces randomly oriented. Preferably a pair of fishing hook and fishing line attachment fittings are securely fastened to opposite ends of the lure body, and a feather may be optionally glued to the lure body.
摘要翻译：钓鱼诱饵包括天然石作为诱饵体，并具有随机取向的断裂面。优选地，一对钓鱼钩和钓鱼线附接配件牢固地紧固到诱饵体的相对端，并且羽毛可以任选地胶合到诱饵体上。

10. 发明申请

US20060230259A1 Instruction memory unit and method of operation 有权
标题翻译：指令存储单元和操作方法
公开(公告)号：US20060230259A1
公开(公告)日：2006-10-12
申请号：US11104115
申请日：2005-04-11
申请人： Muhammad Ahmed , Lucian Codrescu , Erich Plondke , William Anderson , Robert Lester , Phillip Jones
发明人： Muhammad Ahmed , Lucian Codrescu , Erich Plondke , William Anderson , Robert Lester , Phillip Jones
IPC分类号： G06F9/00
CPC分类号： G06F9/325 , G06F9/3802 , G06F9/3804 , G06F9/381
摘要： An instruction memory unit comprises a first memory structure operable to store program instructions, and a second memory structure operable to store program instructions fetched from the first memory structure, and to issue stored program instructions for execution. The second memory structure is operable to identify a repeated issuance of a forward program redirect construct, and issue a next program instruction already stored in the second memory structure if a resolution of the forward branching instruction is identical to a last resolution of the same. The second memory structure is further operable to issue a backward program redirect construct, determine whether a target instruction is stored in the second memory structure, issue the target instruction if the target instruction is stored in the second memory structure, and fetch the target instruction from the first memory structure if the target instruction is not stored in the second memory structure.
摘要翻译：指令存储单元包括可操作以存储程序指令的第一存储器结构，以及可操作以存储从第一存储器结构提取的程序指令并且发出用于执行的存储的程序指令的第二存储器结构。如果前向分支指令的分辨率与其最后一个分辨率相同，则第二存储器结构可操作以识别正向程序重定向构造的重复发出，并发出已经存储在第二存储器结构中的下一个程序指令。第二存储器结构还可操作以发出反向程序重定向结构，确定目标指令是否存储在第二存储器结构中，如果目标指令存储在第二存储器结构中，则发出目标指令，并从如果目标指令没有存储在第二存储器结构中的第一存储器结构。

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