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    • 9. 发明授权
    • Magnetic multilayered film, magnetoresistance effect element and
magnetoresistance device
    • 磁性多层膜,磁阻效应元件和磁阻器件
    • US5958611A
    • 1999-09-28
    • US873739
    • 1997-06-12
    • Manabu OhtaKiyoshi NoguchiMasashi SanoSatoru ArakiTaro Oike
    • Manabu OhtaKiyoshi NoguchiMasashi SanoSatoru ArakiTaro Oike
    • G11B5/31G11B5/39H01F10/08H01F10/32H01L43/08H01L43/10G11B5/66
    • B82Y25/00B82Y10/00G11B5/3903H01F10/3268H01L43/10G11B2005/3996G11B5/3163Y10S428/90Y10T428/1107Y10T428/1121Y10T428/24355
    • According to the present invention, a magnetic multilayered film includes an oxide antiferromagnetic layer, a pinned ferromagnetic layer which is pinned by the oxide antiferromagnetic layer, a non-magnetic metal layer and a free ferromagnetic layer which are stacked on a substrate in order. A surface roughness Ra of the oxide antiferromagnetic layer at the side of the pinned ferromagnetic layer is set to no greater than 0.6 nm, and a crystal grain size D of the oxide antiferromagnetic layer is set to a value in the range of 10 to 40 nm. Thus, the magnetic multilayered film has the large exchange-coupling magnetic field and MR ratio and MR sensitivity. The magnetic multilayered film may be applied to a magnetoresistance effect element which may also applied to a magnetoresistance device, such as, a magnetoresistance effect type head. The magnetoresistance effect element having such a magnetic multilayered film is capable of obtaining high outputs. The magnetoresistance effect type head having such a magnetoresistance effect element which is excellent in current efficiency and capable of detecting signals magnetically recorded in high density, particularly in ultrahigh density exceeding 3 Gbit/inch.sup.2 and further obtaining large outputs.
    • 根据本发明,磁性多层膜包括氧化物反铁磁性层,由氧化物反铁磁层固定的钉扎铁磁性层,依次层叠在基板上的非磁性金属层和自由铁磁性层。 在被钉扎的铁磁层一侧的氧化物反铁磁性层的表面粗糙度Ra被设定为不大于0.6nm,并且氧化物反铁磁性层的晶粒尺寸D设定在10至40nm的范围内的值 。 因此,磁性多层膜具有大的交换耦合磁场和MR比和MR灵敏度。 可以将磁性多层膜施加到也可以施加到诸如磁阻效应型头的磁阻器件的磁阻效应元件。 具有这种磁性多层膜的磁阻效应元件能够获得高输出。 具有这样的磁阻效应元件的磁电阻效应型头具有优异的电流效率,能够检测高密度地磁记录的信号,特别是超过3Gbit / inch2的超高密度,并进一步获得大的输出。