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1. 发明申请

US20120153333A1 Light-Emitting Device and Lighting Device 有权
标题翻译：发光装置和照明装置
公开(公告)号：US20120153333A1
公开(公告)日：2012-06-21
申请号：US13327047
申请日：2011-12-15
申请人： Shunpei Yamazaki , Koichiro Tanaka , Masaaki Hiroki , Hisao Ikeda , Kengo Akimoto
发明人： Shunpei Yamazaki , Koichiro Tanaka , Masaaki Hiroki , Hisao Ikeda , Kengo Akimoto
IPC分类号： H01L33/58 , H01L33/36
CPC分类号： H01L51/5246 , H01L51/50 , H01L51/5212 , H01L51/5237 , H01L51/524 , H01L51/525 , H01L51/5253 , H01L51/5256 , H01L51/5259 , H01L51/5275 , H01L2251/50 , H01L2251/53 , H01L2251/5307 , H01L2251/5323 , H01L2251/5338 , H01L2251/5361
摘要： A highly reliable light-emitting device which includes an organic EL element and is lightweight is provided. The light-emitting device includes a first organic resin layer; a first glass layer over the first organic resin layer; a light-emitting element over the first glass layer; a second glass layer over the light-emitting element; and a second organic resin layer over the second glass layer. The first organic resin layer and the first glass layer each have a property of transmitting visible light. The thickness of the first glass layer and the thickness of the second glass layer are independently greater than or equal to 25 μ and less than or equal to 100 μ. The light-emitting element includes a first electrode having a property of transmitting visible light, a layer containing a light-emitting organic compound, and a second electrode stacked in this order from the first glass layer side.
摘要翻译：提供了包括有机EL元件并且重量轻的高度可靠的发光装置。发光装置包括第一有机树脂层; 第一有机树脂层上的第一玻璃层; 在第一玻璃层上的发光元件; 在所述发光元件上方的第二玻璃层; 和在第二玻璃层上的第二有机树脂层。第一有机树脂层和第一玻璃层各具有透射可见光的性质。第一玻璃层的厚度和第二玻璃层的厚度独立地大于或等于25μ并且小于或等于100μ。发光元件包括具有透射可见光的特性的第一电极，含有发光有机化合物的层和从第一玻璃层侧依次层叠的第二电极。

2. 发明授权

US09502690B2 Organic light-emitting device and lighting device with organic resin and glass substrate 有权
标题翻译：有机发光装置和有机树脂和玻璃基板的照明装置
公开(公告)号：US09502690B2
公开(公告)日：2016-11-22
申请号：US13327047
申请日：2011-12-15
申请人： Shunpei Yamazaki , Koichiro Tanaka , Masaaki Hiroki , Hisao Ikeda , Kengo Akimoto
发明人： Shunpei Yamazaki , Koichiro Tanaka , Masaaki Hiroki , Hisao Ikeda , Kengo Akimoto
IPC分类号： H01L51/52 , H01L51/50
CPC分类号： H01L51/5246 , H01L51/50 , H01L51/5212 , H01L51/5237 , H01L51/524 , H01L51/525 , H01L51/5253 , H01L51/5256 , H01L51/5259 , H01L51/5275 , H01L2251/50 , H01L2251/53 , H01L2251/5307 , H01L2251/5323 , H01L2251/5338 , H01L2251/5361
摘要： A highly reliable light-emitting device which includes an organic EL element and is lightweight is provided. The light-emitting device includes a first organic resin layer; a first glass layer over the first organic resin layer; a light-emitting element over the first glass layer; a second glass layer over the light-emitting element; and a second organic resin layer over the second glass layer. The first organic resin layer and the first glass layer each have a property of transmitting visible light. The light-emitting element includes a first electrode having a property of transmitting visible light, a layer containing a light-emitting organic compound, and a second electrode stacked in this order from the first glass layer side.
摘要翻译：提供了包括有机EL元件并且重量轻的高度可靠的发光装置。发光装置包括第一有机树脂层; 第一有机树脂层上的第一玻璃层; 在第一玻璃层上的发光元件; 在所述发光元件上方的第二玻璃层; 和在第二玻璃层上的第二有机树脂层。第一有机树脂层和第一玻璃层各具有透射可见光的性质。发光元件包括具有透射可见光的特性的第一电极，含有发光有机化合物的层和从第一玻璃层侧依次层叠的第二电极。

3. 发明授权

US09331306B2 Organic optical device and protective component of organic optical device 有权
标题翻译：有机光学器件和有机光学器件的保护元件
公开(公告)号：US09331306B2
公开(公告)日：2016-05-03
申请号：US13302213
申请日：2011-11-22
申请人： Shunpei Yamazaki , Hisao Ikeda , Kengo Akimoto
发明人： Shunpei Yamazaki , Hisao Ikeda , Kengo Akimoto
IPC分类号： H01L51/52 , H01L27/32
CPC分类号： H01L51/5253 , H01L27/3258 , H01L51/5275
摘要： An organic optical device which can suppress deterioration due to moisture or an impurity is provided. An organic optical device includes a supporting body, a functional layer provided over the supporting body, and a light-emitting body containing an organic compound provided over the functional layer. The functional layer includes an insulating film containing gallium or aluminum, zinc, and oxygen. The supporting body and the functional layer each have a property of transmitting light with a wavelength of greater than or equal to 400 nm and less than or equal to 700 nm. By using the insulating film containing gallium or aluminum, zinc, and oxygen as a protective film, entry of moisture or an impurity into an organic compound or a metal material can be suppressed.
摘要翻译：提供了能够抑制由于水分或杂质引起的劣化的有机光学元件。有机光学器件包括支撑体，设置在支撑体上的功能层，以及包含设置在功能层上的有机化合物的发光体。功能层包括含有镓或铝，锌和氧的绝缘膜。支撑体和功能层各自具有透射波长大于或等于400nm且小于或等于700nm的光的性质。通过使用含有镓或铝，锌和氧的绝缘膜作为保护膜，可以抑制水分或杂质进入有机化合物或金属材料。

4. 发明授权

US09935202B2 Transistor and display device comprising oxide semiconductor layer 有权
公开(公告)号：US09935202B2
公开(公告)日：2018-04-03
申请号：US13528009
申请日：2012-06-20
申请人： Shunpei Yamazaki , Masayuki Sakakura , Ryosuke Watanabe , Junichiro Sakata , Kengo Akimoto , Akiharu Miyanaga , Takuya Hirohashi , Hideyuki Kishida
发明人： Shunpei Yamazaki , Masayuki Sakakura , Ryosuke Watanabe , Junichiro Sakata , Kengo Akimoto , Akiharu Miyanaga , Takuya Hirohashi , Hideyuki Kishida
IPC分类号： H01L29/10 , H01L29/786 , H01L27/12 , H01L29/04
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/04 , H01L29/045 , H01L29/78618 , H01L29/78693 , H01L29/78696
摘要： To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.

5. 发明授权

US09196633B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US09196633B2
公开(公告)日：2015-11-24
申请号：US12556704
申请日：2009-09-10
申请人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
发明人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
IPC分类号： H01L33/00 , H01L27/12 , G02F1/1362 , H01L27/02 , H01L29/786
CPC分类号： H01L27/124 , G02F1/136204 , G02F1/136286 , H01L27/0266 , H01L27/1225 , H01L29/7869
摘要： A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
摘要翻译：保护电路包括非线性元件，其包括栅电极，覆盖栅电极的栅极绝缘层，与栅极绝缘层上的栅电极重叠的第一氧化物半导体层，以及第一布线层和第二布线层其端部与第一氧化物半导体层上的栅电极重叠，并且其中层叠有导电层和第二氧化物半导体层。在栅极绝缘层上，具有不同性质的氧化物半导体层彼此结合，由此可以进行与肖特基结的稳定操作。因此，可以降低结漏电，提高非线性元件的特性。

6. 发明授权

US09111804B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US09111804B2
公开(公告)日：2015-08-18
申请号：US13346963
申请日：2012-01-10
申请人： Shunpei Yamazaki , Hidekazu Miyairi , Kengo Akimoto , Kojiro Shiraishi
发明人： Shunpei Yamazaki , Hidekazu Miyairi , Kengo Akimoto , Kojiro Shiraishi
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L29/66969 , H01L21/46 , H01L27/1225 , H01L29/7869
摘要： It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.

7. 发明授权

US08970106B2 Display device and method for manufacturing the same 有权
公开(公告)号：US08970106B2
公开(公告)日：2015-03-03
申请号：US13360838
申请日：2012-01-30
申请人： Shunpei Yamazaki , Toru Takayama , Naoya Sakamoto , Kengo Akimoto , Keiji Sato , Tetsunori Maruyama
发明人： Shunpei Yamazaki , Toru Takayama , Naoya Sakamoto , Kengo Akimoto , Keiji Sato , Tetsunori Maruyama
IPC分类号： H01J1/62 , H01J63/04 , H01L51/52 , H01L27/32
CPC分类号： H01L51/5206 , H01L27/3244 , H01L27/3246 , H01L27/3281 , H01L27/3295 , H01L51/5215 , Y10S428/917
摘要： According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.

8. 发明授权

US08901552B2 Top gate thin film transistor with multiple oxide semiconductor layers 有权
标题翻译：具有多个氧化物半导体层的顶栅薄膜晶体管
公开(公告)号：US08901552B2
公开(公告)日：2014-12-02
申请号：US13226713
申请日：2011-09-07
申请人： Shunpei Yamazaki , Yusuke Nonaka , Takayuki Inoue , Masashi Tsubuku , Kengo Akimoto , Akiharu Miyanaga
发明人： Shunpei Yamazaki , Yusuke Nonaka , Takayuki Inoue , Masashi Tsubuku , Kengo Akimoto , Akiharu Miyanaga
IPC分类号： H01L29/12 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L27/01 , H01L27/12 , H01L21/02 , H01L29/786
CPC分类号： H01L29/7869 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L29/04 , H01L29/24 , H01L29/78603
摘要： An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.
摘要翻译：本发明的目的是提供一种具有稳定的电气特性和高可靠性的氧化物半导体膜的半导体装置。通过在绝缘表面上形成厚度为1nm至10nm的第一材料膜（具有六方晶体结构的膜）形成第一和第二材料膜的叠层，并形成具有六方晶系结构的第二材料膜（使用第一材料膜作为核的结晶氧化物半导体膜）。作为第一材料膜，具有纤锌矿晶体结构的材料膜（例如氮化镓或氮化铝）或具有刚玉晶体结构的材料膜（α-Al 2 O 3，α-Ga 2 O 3，In 2 O 3，Ti 2 O 3，V 2 O 3，Cr 2 O 3，或 α-Fe 2 O 3）。

9. 发明授权

US08890166B2 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US08890166B2
公开(公告)日：2014-11-18
申请号：US12871184
申请日：2010-08-30
申请人： Masayuki Sakakura , Yoshiaki Oikawa , Shunpei Yamazaki , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba
发明人： Masayuki Sakakura , Yoshiaki Oikawa , Shunpei Yamazaki , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036 , H01L27/32 , H01L27/12
CPC分类号： H01L27/1251 , H01L27/1225 , H01L27/322 , H01L27/3262
摘要： An object of the present invention is to provide a light-emitting device in which plural kinds of circuits are formed over the same substrate, and plural kinds of thin film transistors are provided in accordance with characteristics of the plural kinds of circuits. An inverted-coplanar thin film transistor, an oxide semiconductor layer of which overlaps with a source and drain electrode layers, and a channel-etched thin film transistor are used as a thin film transistor for a pixel and a thin film transistor for a driver circuit, respectively. Between the thin film transistor for a pixel and a light-emitting element, a color filter layer is provided so as to overlap with the light-emitting element which is electrically connected to the thin film transistor for a pixel.
摘要翻译：本发明的目的是提供一种在同一基板上形成多种电路的发光器件，并且根据多种电路的特性提供多种薄膜晶体管。作为用于像素的薄膜晶体管和用于驱动电路的薄膜晶体管，使用反向共面薄膜晶体管，其与源极和漏极层重叠的氧化物半导体层和沟道蚀刻薄膜晶体管，分别。在用于像素的薄膜晶体管和发光元件之间，设置滤色器层，以与与像素的薄膜晶体管电连接的发光元件重叠。

10. 发明授权

US08729544B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08729544B2
公开(公告)日：2014-05-20
申请号：US13013054
申请日：2011-01-25
申请人： Shunpei Yamazaki , Hidekazu Miyairi , Kengo Akimoto , Kojiro Shiraishi
发明人： Shunpei Yamazaki , Hidekazu Miyairi , Kengo Akimoto , Kojiro Shiraishi
IPC分类号： H01L29/22 , H01L29/786
CPC分类号： H01L29/66969 , H01L21/46 , H01L27/1225 , H01L29/7869
摘要： It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.
摘要翻译：本发明的目的是提供一种包括具有良好的电性能和高可靠性的薄膜晶体管的半导体器件，以及一种以高生产率制造半导体器件的方法。在倒置交错（底栅极）薄膜晶体管中，使用含有In，Ga和Zn的氧化物半导体膜作为半导体层，并且在半导体层和源之间设置使用金属氧化物层形成的缓冲层，漏电极层。有意地提供金属氧化物层作为半导体层与源极和漏极电极层之间的缓冲层，从而获得欧姆接触。

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