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1. 发明申请

US20110147596A1 PHOTOELECTRIC CONVERSION DEVICE AND RADIATION DETECTION DEVICE 审中-公开
标题翻译：光电转换装置和辐射检测装置
公开(公告)号：US20110147596A1
公开(公告)日：2011-06-23
申请号：US12987224
申请日：2011-01-10
申请人： Yukimasa Ishida , Takashi Sato , Yasushi Yamazaki
发明人： Yukimasa Ishida , Takashi Sato , Yasushi Yamazaki
IPC分类号： G01T1/20 , H01L27/146 , G01T1/17
CPC分类号： H01L27/14663 , H01L27/14659 , H04N5/32 , H04N5/3577 , H04N5/363 , H04N5/374 , H04N5/378
摘要： A photoelectric conversion device is provided and includes: a photoelectric conversion panel in which light detection portions each having a charge storage portion storing light as electric charges are two-dimensionally arranged; a reading control unit that reads the electric charges stored in the charge storage portions of the photoelectric conversion panel for each reading signal line; and a reset unit that is connected to the reading signal lines and discharges residual charges of the charge storage portions for each reading signal line. The reading control unit and the reset unit are arranged at different end portions of the photoelectric conversion panel.
摘要翻译：提供一种光电转换装置，包括：光电转换面板，其中具有存储作为电荷的光的电荷存储部分的光检测部分被二维布置; 读取控制单元，用于读取对于每个读取信号线存储在光电转换面板的电荷存储部分中的电荷; 以及复位单元，连接到读取信号线，并且对每个读取信号线排出电荷存储部分的剩余电荷。读取控制单元和复位单元布置在光电转换面板的不同端部。

2. 发明申请

US20110266599A1 SOLID-STATE IMAGE PICKUP DEVICE 有权
标题翻译：固态图像拾取器件
公开(公告)号：US20110266599A1
公开(公告)日：2011-11-03
申请号：US13180211
申请日：2011-07-11
申请人： Yukimasa Ishida , Takashi Sato , Yasushi Yamazaki
发明人： Yukimasa Ishida , Takashi Sato , Yasushi Yamazaki
IPC分类号： H01L27/146
CPC分类号： H01L27/14658
摘要： A solid-state image pickup device is provided which includes a substrate; a transistor formed on the substrate; a photoelectric conversion element including a first electrode connected to a drain or a source of the transistor, a semiconductor layer stacked on the first electrode, and a second electrode stacked on the semiconductor layer; an insulating layer disposed on the second electrode; and a bias line formed on the insulating layer to be connected to the second electrode, in which the insulating layer contains at least an inorganic insulating film, and the bias line is connected to the second electrode via a contact hole formed in the insulating layer, and a side surface of the semiconductor layer is in contact with the inorganic insulating film.
摘要翻译：提供一种固态图像拾取装置，其包括基板; 形成在基板上的晶体管; 光电转换元件，包括连接到晶体管的漏极或源极的第一电极，堆叠在第一电极上的半导体层和堆叠在半导体层上的第二电极; 设置在所述第二电极上的绝缘层; 以及形成在绝缘层上的与绝缘层至少包含无机绝缘膜连接的绝缘层上的偏置线，偏置线经由形成在绝缘层中的接触孔连接到第二电极，并且半导体层的侧表面与无机绝缘膜接触。

3. 发明申请

US20090302202A1 SOLID-STATE IMAGE PICKUP DEVICE 有权
标题翻译：固态图像拾取器件
公开(公告)号：US20090302202A1
公开(公告)日：2009-12-10
申请号：US12422616
申请日：2009-04-13
申请人： Takashi Sato , Yukimasa Ishida , Yasushi Yamazaki
发明人： Takashi Sato , Yukimasa Ishida , Yasushi Yamazaki
IPC分类号： H01L27/00 , G01T1/24
CPC分类号： H01L27/14609 , H01L27/14603 , H04N5/374
摘要： There is provided a solid-state image pickup device that has a plurality of scanning lines that extends in a predetermined direction, a plurality of data lines that extends in a direction for intersecting the scanning lines, and a plurality of bias lines within an image pickup area on a substrate. For each of a plurality of pixels disposed in positions corresponding to intersections of the plurality of scanning lines and the plurality of data lines, a field effect transistor that is controlled by the scanning line and a photoelectric conversion element that has a electrode electrically connected to the data line through the field effect transistor and a electrode electrically connected to the bias line are formed, and a constant electric potential line for electrostatic protection is formed on the substrate. For each of bias lines, a bias line electrostatic protection circuit having a protection diode.
摘要翻译：提供了一种固态图像拾取装置，其具有沿预定方向延伸的多条扫描线，沿与扫描线相交的方向延伸的多条数据线，以及在图像拾取器内的多条偏置线基底上的区域。对于设置在与多条扫描线和多条数据线的交点对应的位置的多个像素中的每一个，由扫描线控制的场效应晶体管和具有电连接到该扫描线的电极的光电转换元件形成通过场效应晶体管的数据线和电连接到偏置线的电极，并且在基板上形成用于静电保护的恒定电位线。对于每个偏置线，具有保护二极管的偏置线静电保护电路。

4. 发明授权

US08497562B2 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US08497562B2
公开(公告)日：2013-07-30
申请号：US13180211
申请日：2011-07-11
申请人： Yukimasa Ishida , Takashi Sato , Yasushi Yamazaki
发明人： Yukimasa Ishida , Takashi Sato , Yasushi Yamazaki
IPC分类号： H01L31/102 , H01L27/148 , G01T1/24
CPC分类号： H01L27/14658
摘要： A solid-state image pickup device is provided which includes a substrate; a transistor formed on the substrate; a photoelectric conversion element including a first electrode connected to a drain or a source of the transistor, a semiconductor layer stacked on the first electrode, and a second electrode stacked on the semiconductor layer; an insulating layer disposed on the second electrode; and a bias line formed on the insulating layer to be connected to the second electrode, in which the insulating layer contains at least an inorganic insulating film, and the bias line is connected to the second electrode via a contact hole formed in the insulating layer, and a side surface of the semiconductor layer is in contact with the inorganic insulating film.
摘要翻译：提供一种固态图像拾取装置，其包括基板; 形成在基板上的晶体管; 光电转换元件，包括连接到晶体管的漏极或源极的第一电极，堆叠在第一电极上的半导体层和堆叠在半导体层上的第二电极; 设置在所述第二电极上的绝缘层; 以及形成在绝缘层上的与绝缘层至少包含无机绝缘膜连接的绝缘层上的偏置线，偏置线经由形成在绝缘层中的接触孔连接到第二电极，并且半导体层的侧表面与无机绝缘膜接触。

5. 发明授权

US07956313B2 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US07956313B2
公开(公告)日：2011-06-07
申请号：US12422616
申请日：2009-04-13
申请人： Takashi Sato , Yukimasa Ishida , Yasushi Yamazaki
发明人： Takashi Sato , Yukimasa Ishida , Yasushi Yamazaki
IPC分类号： H01L27/00
CPC分类号： H01L27/14609 , H01L27/14603 , H04N5/374
摘要： There is provided a solid-state image pickup device that has a plurality of scanning lines that extends in a predetermined direction, a plurality of data lines that extends in a direction for intersecting the scanning lines, and a plurality of bias lines within an image pickup area on a substrate. For each of a plurality of pixels disposed in positions corresponding to intersections of the plurality of scanning lines and the plurality of data lines, a field effect transistor that is controlled by the scanning line and a photoelectric conversion element that has a electrode electrically connected to the data line through the field effect transistor and a electrode electrically connected to the bias line are formed, and a constant electric potential line for electrostatic protection is formed on the substrate. For each of bias lines, a bias line electrostatic protection circuit having a protection diode.
摘要翻译：提供了一种固态图像拾取装置，其具有沿预定方向延伸的多条扫描线，沿与扫描线相交的方向延伸的多条数据线，以及在图像拾取器内的多条偏置线基底上的区域。对于设置在与多条扫描线和多条数据线的交点对应的位置的多个像素中的每一个，由扫描线控制的场效应晶体管和具有电连接到该扫描线的电极的光电转换元件形成通过场效应晶体管的数据线和电连接到偏置线的电极，并且在基板上形成用于静电保护的恒定电位线。对于每个偏置线，具有保护二极管的偏置线静电保护电路。

6. 发明授权

US08441014B2 Electro-optical device substrate, electro-optical device, and electronic apparatus 有权
标题翻译：电光器件基板，电光器件和电子设备
公开(公告)号：US08441014B2
公开(公告)日：2013-05-14
申请号：US13078197
申请日：2011-04-01
申请人： Yasushi Yamazaki , Takashi Sato
发明人： Yasushi Yamazaki , Takashi Sato
IPC分类号： H01L29/04
CPC分类号： H01L27/1225 , G02F1/167 , H01L27/1255
摘要： In an electro-optical device substrate, first and second pixel switching elements each include a gate electrode formed of a first conductive film, a gate insulation film formed of a first insulation film, a semiconductor layer, a source electrode formed of a second conductive film, and a drain electrode formed of the second conductive film. A first storage capacitor includes a first storage capacitor electrode formed of the second conductive film, a protective film formed of a second insulation film so as to over at least the first storage capacitor electrode, and a pixel electrode formed so as to overlap with the first storage capacitor electrode at least partially with the protective film interposed therebetween.
摘要翻译：在电光器件基板中，第一和第二像素开关元件各自包括由第一导电膜形成的栅极电极，由第一绝缘膜形成的栅极绝缘膜，半导体层，由第二导电膜形成的源极以及由第二导电膜形成的漏电极。第一存储电容器包括由第二导电膜形成的第一存储电容电极，至少形成在第一保持电容电极上的由第二绝缘膜形成的保护膜，以及形成为与第一导电膜重叠的像素电极保持电容电极至少部分地保留有保护膜。

7. 发明授权

US08217927B2 Display unit 有权
标题翻译：显示单元
公开(公告)号：US08217927B2
公开(公告)日：2012-07-10
申请号：US12192157
申请日：2008-08-15
申请人： Takashi Kunimori , Yasushi Yamazaki , Takashi Sato , Masanori Yasumori
发明人： Takashi Kunimori , Yasushi Yamazaki , Takashi Sato , Masanori Yasumori
IPC分类号： G06F3/038 , G09G5/00 , G09G3/36
CPC分类号： G09G3/3406 , G09G2320/043 , G09G2360/144
摘要： The invention provides a display unit that has a display area and first and second photodetectors 10a and 10b on a substrate and outputs as a light intensity signal S a light intensity detected by the first and second photodetectors 10a and 10b. The first photodetector 10a includes a first photodetection circuit LS1 outputting a first output signal Sa to an ambient light photosensor reader 20, and the second photodetector 10b includes a light-reducing unit and a second photodetection circuit LS2 outputting a second output signal Sb to an ambient light photosensor reader 20. The ambient light photosensor reader 20 includes a photodegradation factor calculator 21 calculating a photodegradation reparation factor K, a photodegradation rate calculator 22 deriving a photodegradation rate D based on the photodegradation reparation factor K, and a light signal output unit 24 outputting a light intensity signal S based on the photodegradation rate D.
摘要翻译：本发明提供了一种在基板上具有显示区域和第一和第二光电检测器10a和10b的显示单元，并且作为光强度信号S输出由第一和第二光电检测器10a和10b检测的光强度。第一光检测器10a包括将第一输出信号Sa输出到环境光光传感器读取器20的第一光电检测电路LS1，第二光检测器10b包括将第二输出信号Sb输出到环境的光减少单元和第二光电检测电路LS2 环境光光传感器读取器20包括计算光降解修复因子K的光降解因子计算器21，基于光降解修复因子K导出光降解率D的光降解率计算器22，以及光信号输出单元24，其输出基于光降解速率D的光强度信号S.

8. 发明申请

US20090215247A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20090215247A1
公开(公告)日：2009-08-27
申请号：US12434637
申请日：2009-05-02
申请人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
发明人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
IPC分类号： H01L21/304
CPC分类号： H01L21/67092 , H01L21/78 , H01L2224/06181 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.
摘要翻译：在扫描装置（1）的盖（8）的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置（7a）和（7b）。在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上晶片通过照明装置（7a）和（7b）。此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

9. 发明授权

US07998793B2 Light illumination during wafer dicing to prevent aluminum corrosion 有权
标题翻译：晶圆切割时的光照，防止铝腐蚀
公开(公告)号：US07998793B2
公开(公告)日：2011-08-16
申请号：US12434637
申请日：2009-05-02
申请人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
发明人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
IPC分类号： H01L21/00
CPC分类号： H01L21/67092 , H01L21/78 , H01L2224/06181 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.
摘要翻译：在切割装置（1）的盖（8）的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置（7a）和（7b）。在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上晶片通过照明装置（7a）和（7b）。此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

10. 发明申请

US20080138962A1 Manufacturing Method of Semiconductor Device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：US20080138962A1
公开(公告)日：2008-06-12
申请号：US11632993
申请日：2004-07-22
申请人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
发明人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
IPC分类号： H01L21/304
CPC分类号： H01L21/67092 , H01L21/78 , H01L2224/06181 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.
摘要翻译：在切割装置（1）的盖（8）的前表面和后表面上布置照射具有1.1μm或更小的波长的光的照明装置（7a）和（7b）。在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上通过照明装置（7a）和（7b）的晶片。此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

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