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1. 发明授权

US08497562B2 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US08497562B2
公开(公告)日：2013-07-30
申请号：US13180211
申请日：2011-07-11
申请人： Yukimasa Ishida , Takashi Sato , Yasushi Yamazaki
发明人： Yukimasa Ishida , Takashi Sato , Yasushi Yamazaki
IPC分类号： H01L31/102 , H01L27/148 , G01T1/24
CPC分类号： H01L27/14658
摘要： A solid-state image pickup device is provided which includes a substrate; a transistor formed on the substrate; a photoelectric conversion element including a first electrode connected to a drain or a source of the transistor, a semiconductor layer stacked on the first electrode, and a second electrode stacked on the semiconductor layer; an insulating layer disposed on the second electrode; and a bias line formed on the insulating layer to be connected to the second electrode, in which the insulating layer contains at least an inorganic insulating film, and the bias line is connected to the second electrode via a contact hole formed in the insulating layer, and a side surface of the semiconductor layer is in contact with the inorganic insulating film.
摘要翻译：提供一种固态图像拾取装置，其包括基板; 形成在基板上的晶体管; 光电转换元件，包括连接到晶体管的漏极或源极的第一电极，堆叠在第一电极上的半导体层和堆叠在半导体层上的第二电极; 设置在所述第二电极上的绝缘层; 以及形成在绝缘层上的与绝缘层至少包含无机绝缘膜连接的绝缘层上的偏置线，偏置线经由形成在绝缘层中的接触孔连接到第二电极，并且半导体层的侧表面与无机绝缘膜接触。

2. 发明授权

US07956313B2 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US07956313B2
公开(公告)日：2011-06-07
申请号：US12422616
申请日：2009-04-13
申请人： Takashi Sato , Yukimasa Ishida , Yasushi Yamazaki
发明人： Takashi Sato , Yukimasa Ishida , Yasushi Yamazaki
IPC分类号： H01L27/00
CPC分类号： H01L27/14609 , H01L27/14603 , H04N5/374
摘要： There is provided a solid-state image pickup device that has a plurality of scanning lines that extends in a predetermined direction, a plurality of data lines that extends in a direction for intersecting the scanning lines, and a plurality of bias lines within an image pickup area on a substrate. For each of a plurality of pixels disposed in positions corresponding to intersections of the plurality of scanning lines and the plurality of data lines, a field effect transistor that is controlled by the scanning line and a photoelectric conversion element that has a electrode electrically connected to the data line through the field effect transistor and a electrode electrically connected to the bias line are formed, and a constant electric potential line for electrostatic protection is formed on the substrate. For each of bias lines, a bias line electrostatic protection circuit having a protection diode.
摘要翻译：提供了一种固态图像拾取装置，其具有沿预定方向延伸的多条扫描线，沿与扫描线相交的方向延伸的多条数据线，以及在图像拾取器内的多条偏置线基底上的区域。对于设置在与多条扫描线和多条数据线的交点对应的位置的多个像素中的每一个，由扫描线控制的场效应晶体管和具有电连接到该扫描线的电极的光电转换元件形成通过场效应晶体管的数据线和电连接到偏置线的电极，并且在基板上形成用于静电保护的恒定电位线。对于每个偏置线，具有保护二极管的偏置线静电保护电路。

3. 发明申请

US20110147596A1 PHOTOELECTRIC CONVERSION DEVICE AND RADIATION DETECTION DEVICE 审中-公开
标题翻译：光电转换装置和辐射检测装置
公开(公告)号：US20110147596A1
公开(公告)日：2011-06-23
申请号：US12987224
申请日：2011-01-10
申请人： Yukimasa Ishida , Takashi Sato , Yasushi Yamazaki
发明人： Yukimasa Ishida , Takashi Sato , Yasushi Yamazaki
IPC分类号： G01T1/20 , H01L27/146 , G01T1/17
CPC分类号： H01L27/14663 , H01L27/14659 , H04N5/32 , H04N5/3577 , H04N5/363 , H04N5/374 , H04N5/378
摘要： A photoelectric conversion device is provided and includes: a photoelectric conversion panel in which light detection portions each having a charge storage portion storing light as electric charges are two-dimensionally arranged; a reading control unit that reads the electric charges stored in the charge storage portions of the photoelectric conversion panel for each reading signal line; and a reset unit that is connected to the reading signal lines and discharges residual charges of the charge storage portions for each reading signal line. The reading control unit and the reset unit are arranged at different end portions of the photoelectric conversion panel.
摘要翻译：提供一种光电转换装置，包括：光电转换面板，其中具有存储作为电荷的光的电荷存储部分的光检测部分被二维布置; 读取控制单元，用于读取对于每个读取信号线存储在光电转换面板的电荷存储部分中的电荷; 以及复位单元，连接到读取信号线，并且对每个读取信号线排出电荷存储部分的剩余电荷。读取控制单元和复位单元布置在光电转换面板的不同端部。

4. 发明申请

US20090302202A1 SOLID-STATE IMAGE PICKUP DEVICE 有权
标题翻译：固态图像拾取器件
公开(公告)号：US20090302202A1
公开(公告)日：2009-12-10
申请号：US12422616
申请日：2009-04-13
申请人： Takashi Sato , Yukimasa Ishida , Yasushi Yamazaki
发明人： Takashi Sato , Yukimasa Ishida , Yasushi Yamazaki
IPC分类号： H01L27/00 , G01T1/24
CPC分类号： H01L27/14609 , H01L27/14603 , H04N5/374
摘要： There is provided a solid-state image pickup device that has a plurality of scanning lines that extends in a predetermined direction, a plurality of data lines that extends in a direction for intersecting the scanning lines, and a plurality of bias lines within an image pickup area on a substrate. For each of a plurality of pixels disposed in positions corresponding to intersections of the plurality of scanning lines and the plurality of data lines, a field effect transistor that is controlled by the scanning line and a photoelectric conversion element that has a electrode electrically connected to the data line through the field effect transistor and a electrode electrically connected to the bias line are formed, and a constant electric potential line for electrostatic protection is formed on the substrate. For each of bias lines, a bias line electrostatic protection circuit having a protection diode.
摘要翻译：提供了一种固态图像拾取装置，其具有沿预定方向延伸的多条扫描线，沿与扫描线相交的方向延伸的多条数据线，以及在图像拾取器内的多条偏置线基底上的区域。对于设置在与多条扫描线和多条数据线的交点对应的位置的多个像素中的每一个，由扫描线控制的场效应晶体管和具有电连接到该扫描线的电极的光电转换元件形成通过场效应晶体管的数据线和电连接到偏置线的电极，并且在基板上形成用于静电保护的恒定电位线。对于每个偏置线，具有保护二极管的偏置线静电保护电路。

5. 发明授权

US08441014B2 Electro-optical device substrate, electro-optical device, and electronic apparatus 有权
标题翻译：电光器件基板，电光器件和电子设备
公开(公告)号：US08441014B2
公开(公告)日：2013-05-14
申请号：US13078197
申请日：2011-04-01
申请人： Yasushi Yamazaki , Takashi Sato
发明人： Yasushi Yamazaki , Takashi Sato
IPC分类号： H01L29/04
CPC分类号： H01L27/1225 , G02F1/167 , H01L27/1255
摘要： In an electro-optical device substrate, first and second pixel switching elements each include a gate electrode formed of a first conductive film, a gate insulation film formed of a first insulation film, a semiconductor layer, a source electrode formed of a second conductive film, and a drain electrode formed of the second conductive film. A first storage capacitor includes a first storage capacitor electrode formed of the second conductive film, a protective film formed of a second insulation film so as to over at least the first storage capacitor electrode, and a pixel electrode formed so as to overlap with the first storage capacitor electrode at least partially with the protective film interposed therebetween.
摘要翻译：在电光器件基板中，第一和第二像素开关元件各自包括由第一导电膜形成的栅极电极，由第一绝缘膜形成的栅极绝缘膜，半导体层，由第二导电膜形成的源极以及由第二导电膜形成的漏电极。第一存储电容器包括由第二导电膜形成的第一存储电容电极，至少形成在第一保持电容电极上的由第二绝缘膜形成的保护膜，以及形成为与第一导电膜重叠的像素电极保持电容电极至少部分地保留有保护膜。

6. 发明授权

US08217927B2 Display unit 有权
标题翻译：显示单元
公开(公告)号：US08217927B2
公开(公告)日：2012-07-10
申请号：US12192157
申请日：2008-08-15
申请人： Takashi Kunimori , Yasushi Yamazaki , Takashi Sato , Masanori Yasumori
发明人： Takashi Kunimori , Yasushi Yamazaki , Takashi Sato , Masanori Yasumori
IPC分类号： G06F3/038 , G09G5/00 , G09G3/36
CPC分类号： G09G3/3406 , G09G2320/043 , G09G2360/144
摘要： The invention provides a display unit that has a display area and first and second photodetectors 10a and 10b on a substrate and outputs as a light intensity signal S a light intensity detected by the first and second photodetectors 10a and 10b. The first photodetector 10a includes a first photodetection circuit LS1 outputting a first output signal Sa to an ambient light photosensor reader 20, and the second photodetector 10b includes a light-reducing unit and a second photodetection circuit LS2 outputting a second output signal Sb to an ambient light photosensor reader 20. The ambient light photosensor reader 20 includes a photodegradation factor calculator 21 calculating a photodegradation reparation factor K, a photodegradation rate calculator 22 deriving a photodegradation rate D based on the photodegradation reparation factor K, and a light signal output unit 24 outputting a light intensity signal S based on the photodegradation rate D.
摘要翻译：本发明提供了一种在基板上具有显示区域和第一和第二光电检测器10a和10b的显示单元，并且作为光强度信号S输出由第一和第二光电检测器10a和10b检测的光强度。第一光检测器10a包括将第一输出信号Sa输出到环境光光传感器读取器20的第一光电检测电路LS1，第二光检测器10b包括将第二输出信号Sb输出到环境的光减少单元和第二光电检测电路LS2 环境光光传感器读取器20包括计算光降解修复因子K的光降解因子计算器21，基于光降解修复因子K导出光降解率D的光降解率计算器22，以及光信号输出单元24，其输出基于光降解速率D的光强度信号S.

7. 发明申请

US20110266599A1 SOLID-STATE IMAGE PICKUP DEVICE 有权
标题翻译：固态图像拾取器件
公开(公告)号：US20110266599A1
公开(公告)日：2011-11-03
申请号：US13180211
申请日：2011-07-11
申请人： Yukimasa Ishida , Takashi Sato , Yasushi Yamazaki
发明人： Yukimasa Ishida , Takashi Sato , Yasushi Yamazaki
IPC分类号： H01L27/146
CPC分类号： H01L27/14658
摘要： A solid-state image pickup device is provided which includes a substrate; a transistor formed on the substrate; a photoelectric conversion element including a first electrode connected to a drain or a source of the transistor, a semiconductor layer stacked on the first electrode, and a second electrode stacked on the semiconductor layer; an insulating layer disposed on the second electrode; and a bias line formed on the insulating layer to be connected to the second electrode, in which the insulating layer contains at least an inorganic insulating film, and the bias line is connected to the second electrode via a contact hole formed in the insulating layer, and a side surface of the semiconductor layer is in contact with the inorganic insulating film.
摘要翻译：提供一种固态图像拾取装置，其包括基板; 形成在基板上的晶体管; 光电转换元件，包括连接到晶体管的漏极或源极的第一电极，堆叠在第一电极上的半导体层和堆叠在半导体层上的第二电极; 设置在所述第二电极上的绝缘层; 以及形成在绝缘层上的与绝缘层至少包含无机绝缘膜连接的绝缘层上的偏置线，偏置线经由形成在绝缘层中的接触孔连接到第二电极，并且半导体层的侧表面与无机绝缘膜接触。

8. 发明授权

US07928941B2 Electro-optical device, driving circuit and electronic apparatus 有权
标题翻译：电光装置，驱动电路和电子设备
公开(公告)号：US07928941B2
公开(公告)日：2011-04-19
申请号：US12000754
申请日：2007-12-17
申请人： Katsunori Yamazaki , Yasushi Yamazaki
发明人： Katsunori Yamazaki , Yasushi Yamazaki
IPC分类号： G09G3/34
CPC分类号： G09G3/3677 , G09G3/2011 , G09G3/3614 , G09G3/3655 , G09G2300/0876 , G09G2310/0283 , G09G2330/021
摘要： It is possible to suppress the voltage amplitudes of data lines and to prevent deterioration in display quality by a simple configuration.Each of pixels 110 includes a pixel capacitor and a storage capacitor of which one end is connected to a pixel electrode and the other end is connected to each capacitive line 132. If first, second, third, . . . , 320th, and 321st scanning lines 112 are sequentially selected, the capacitive line 132 of each row is provided with TFTs 152, 154, 156 and 158. A source electrode of the TFT 156 of a first row is connected to a first feed line 165 and a gate electrode thereof is connected to a first scanning line 112. A source electrode of the TFT 158 is connected to a second feed line 167 and a gate electrode thereof is connected to a common drain electrode of the TFTs 152 and 154. The drain electrodes of the TFT 156 and 158 are connected to the first capacitive line 132. A gate electrode of the TFT 152 is connected to a second scanning line 112.
摘要翻译：可以通过简单的配置来抑制数据线的电压振幅和防止显示质量的劣化。每个像素110包括像素电容器和存储电容器，其一端连接到像素电极，另一端连接到每个电容线132.如果是第一，第二，第三，。。，第320和第321扫描线112，每行的电容线132设置有TFT 152,154,156和158.第一行的TFT 156的源电极连接到第一馈电线165 其栅电极连接到第一扫描线112. TFT 158的源电极连接到第二馈电线167，其栅电极连接到TFT 152和154的公共漏电极。漏极 TFT 156和158的电极连接到第一电容线132.TFT 152的栅电极连接到第二扫描线112。

9. 发明授权

US07659571B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07659571B2
公开(公告)日：2010-02-09
申请号：US11445236
申请日：2006-06-02
申请人： Yasushi Yamazaki
发明人： Yasushi Yamazaki
IPC分类号： H01L29/94
CPC分类号： H01L29/7834 , H01L21/28052 , H01L27/10876 , H01L29/66621 , H01L29/66628
摘要： A semiconductor device is provide with a semiconductor substrate, a groove formed in the semiconductor substrate, a gate insulting film formed on the inner wall of the groove, a gate electrode formed in the groove, and a source/drain region and an LDD region arranged in the direction that is substantially orthogonal to the substrate surface of the semiconductor substrate.
摘要翻译：半导体器件设置有半导体衬底，形成在半导体衬底中的沟槽，形成在沟槽的内壁上的栅极绝缘膜，形成在沟槽中的栅电极，以及源极/漏极区域和布置成LDD区域的LDD区域在基本上正交于半导体衬底的衬底表面的方向上。

10. 发明授权

US07465637B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07465637B2
公开(公告)日：2008-12-16
申请号：US11520696
申请日：2006-09-14
申请人： Yasushi Yamazaki
发明人： Yasushi Yamazaki
IPC分类号： H01L21/336
CPC分类号： H01L29/66621 , H01L27/10876 , H01L29/1083 , H01L29/66659 , H01L29/78
摘要： A method for manufacturing a semiconductor device comprises the steps of forming a gate trench in a semiconductor substrate, forming a gate insulation film in an inner wall of the gate trench, filling a gate electrode material into at least an inside of the gate trench, forming a gate electrode by patterning the gate electrode material, and selectively forming a punch-through stopper region prior to patterning the gate electrode material, using a mask in a prescribed position of the semiconductor substrate that is adjacent to the gate trench. The step for forming the punch-through stopper region may be performed subsequent to the step for filling the gate electrode material into the gate trench, or may be performed prior to the step for forming the gate trench.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在半导体衬底中形成栅极沟槽，在栅极沟槽的内壁中形成栅极绝缘膜，将栅电极材料填充到栅极沟槽的至少内部，形成通过对栅电极材料进行构图而形成栅电极，并且在栅极电极材料图案化之前，使用与栅极沟槽相邻的半导体衬底的规定位置的掩模来选择性地形成穿通阻挡区域。用于形成穿通阻止区域的步骤可以在用于将栅电极材料填充到栅极沟槽中的步骤之后进行，或者可以在用于形成栅极沟槽的步骤之前进行。

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