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1. 发明申请

US20080317422A1 OPTICAL INTEGRATED DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：光学集成装置及其制造方法
公开(公告)号：US20080317422A1
公开(公告)日：2008-12-25
申请号：US11843682
申请日：2007-08-23
申请人： TAKESHI KITATANI , Kazunori Shinoda , Takashi Shiota , Shigeki Makino , Toshihiko Fukamachi
发明人： TAKESHI KITATANI , Kazunori Shinoda , Takashi Shiota , Shigeki Makino , Toshihiko Fukamachi
IPC分类号： G02B6/10 , H01L21/02
CPC分类号： G02B6/136 , G02B2006/12078 , G02B2006/12097 , G02B2006/12121 , G02B2006/12128 , G02B2006/12142
摘要： In the optical integrated devices with ridge waveguide structure based on the conventional technology, there occur such troubles as generation of a recess in a BJ section to easily cause a crystal defect due to the mass transport phenomenon of InP when a butt joint (BJ) is grown, lowering of reliability of the devices, and lowering in a yield in fabrication of devices. In the present invention, a protection layer made of InGaAsP is provided on the BJ section. The layer has high etching selectivity for the InP cladding layer and remains on the BJ section even after mesa etching.
摘要翻译：在基于传统技术的具有脊波导结构的光学集成装置中，当对接部（BJ）为对接接头（BJ）时，发生BJ部分中的凹部的产生容易引起由于InP的质量传递现象引起的晶体缺陷的问题增长，降低了器件的可靠性，并降低了器件制造的成品率。在本发明中，在BJ部分上设置由InGaAsP制成的保护层。该层对于InP包层具有高蚀刻选择性，并且即使在台面蚀刻之后也保留在BJ部分上。

2. 发明申请

US20080069493A1 INTEGRATED OPTOELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：集成光电装置及其制造方法
公开(公告)号：US20080069493A1
公开(公告)日：2008-03-20
申请号：US11701467
申请日：2007-02-02
申请人： Kazunori Shinoda , Takashi Shiota , Tomonobu Tsuchiya , Takeshi Kitatani , Masahiro Aoki
发明人： Kazunori Shinoda , Takashi Shiota , Tomonobu Tsuchiya , Takeshi Kitatani , Masahiro Aoki
IPC分类号： G02B6/12 , H01L21/00
CPC分类号： G02B6/12004 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , H01S5/0265
摘要： An integrated optoelectronic device includes optical waveguide elements containing InGaAlAs as a principal component, formed on an InP substrate and connected in an end-to-end fashion by butt jointing. AnInGaAs Player is formed on the InP substrate to suppress the mass transport of InP during the fabrication of the integrated optoelectronic device. The InGaAsP layer is formed before the InP substrate is heated at a crystal growth temperature on the order of 700° C. to form the InGaAlAs optical waveguide element.
摘要翻译：集成光电子器件包括含有InGaAlAs作为主要成分的光波导元件，其形成在InP衬底上并且通过对接连接以端对端的方式连接。在InP衬底上形成AnInGaAs Player，以在集成光电子器件的制造期间抑制InP的质量传输。在InP衬底在约700℃的晶体生长温度下加热之前形成InGaAsP层以形成InGaAlAs光波导元件。

3. 发明授权

US07711229B2 Optical integrated device and manufacturing method thereof 有权
标题翻译：光集成器件及其制造方法
公开(公告)号：US07711229B2
公开(公告)日：2010-05-04
申请号：US11843682
申请日：2007-08-23
申请人： Takeshi Kitatani , Kazunori Shinoda , Takashi Shiota , Shigeki Makino , Toshihiko Fukamachi
发明人： Takeshi Kitatani , Kazunori Shinoda , Takashi Shiota , Shigeki Makino , Toshihiko Fukamachi
IPC分类号： G02B6/10 , G02B6/12
CPC分类号： G02B6/136 , G02B2006/12078 , G02B2006/12097 , G02B2006/12121 , G02B2006/12128 , G02B2006/12142
摘要： In the optical integrated devices with ridge waveguide structure based on the conventional technology, there occur such troubles as generation of a recess in a BJ section to easily cause a crystal defect due to the mass transport phenomenon of InP when a butt joint (BJ) is grown, lowering of reliability of the devices, and lowering in a yield in fabrication of devices. In the present invention, a protection layer made of InGaAsP is provided on the BJ section. The layer has high etching selectivity for the InP cladding layer and remains on the BJ section even after mesa etching.
摘要翻译：在基于传统技术的具有脊波导结构的光学集成装置中，当对接部（BJ）为对接接头（BJ）时，发生BJ部分中的凹部的产生容易引起由于InP的质量传递现象引起的晶体缺陷的问题增长，降低了器件的可靠性，并降低了器件制造的成品率。在本发明中，在BJ部分上设置由InGaAsP制成的保护层。该层对于InP包层具有高蚀刻选择性，并且即使在台面蚀刻之后也保留在BJ部分上。

4. 发明授权

US08270446B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US08270446B2
公开(公告)日：2012-09-18
申请号：US12718009
申请日：2010-03-05
申请人： Takashi Shiota , Takeshi Kitatani
发明人： Takashi Shiota , Takeshi Kitatani
IPC分类号： H01S5/00
CPC分类号： H01S5/3434 , B82Y20/00 , H01S5/0265 , H01S5/12 , H01S5/187 , H01S5/2209 , H01S5/2226 , H01S5/2227 , H01S5/2275
摘要： High performance and high reliability of a semiconductor laser device having a buried-hetero structure are achieved. The semiconductor laser device having a buried-hetero structure is manufactured by burying both sides of a mesa structure by a Ru-doped InGaP wide-gap layer and subsequently by a Ru-doped InGaP graded layer whose composition is graded from InGaP to InP, and then, by a Ru-doped InP layer. By providing the Ru-doped InGaP graded layer between the Ru-doped InGaP wide-gap layer and the Ru-doped InP layer, the Ru-doped InGaP wide-gap layer and the Ru-doped InP layer not lattice-matching with each other can be formed as a buried layer with excellent crystallinity.
摘要翻译：实现了具有掩埋异质结构的半导体激光器件的高性能和高可靠性。具有掩埋异质结构的半导体激光器件通过用Ru掺杂的InGaP宽间隙层掩埋台面结构的两面并随后通过组成从InGaP分级为InP的Ru掺杂的InGaP梯度层而制造，以及然后，通过Ru掺杂的InP层。通过在Ru掺杂的InGaP宽间隙层和Ru掺杂的InP层之间提供Ru掺杂的InGaP渐变层，Ru掺杂的InGaP宽间隙层和Ru掺杂的InP层彼此不格子匹配可以形成具有优异结晶度的埋层。

5. 发明授权

US08610105B2 Semiconductor electroluminescent device with a multiple-quantum well layer formed therein 有权
标题翻译：其中形成有多量子阱层的半导体场致发光器件
公开(公告)号：US08610105B2
公开(公告)日：2013-12-17
申请号：US12614859
申请日：2009-11-09
申请人： Toshihiko Fukamachi , Takashi Shiota , Takeshi Kitatani , Nozomu Yasuhara , Atsushi Nakamura , Mitsuhiro Sawada
发明人： Toshihiko Fukamachi , Takashi Shiota , Takeshi Kitatani , Nozomu Yasuhara , Atsushi Nakamura , Mitsuhiro Sawada
IPC分类号： H01L33/00
CPC分类号： H01S5/3434 , B82Y20/00 , H01L33/06 , H01L33/30 , H01S5/3403 , H01S5/3407
摘要： Provided is a semiconductor electroluminescent device with an InGaAlAs-based well layer having tensile strain, or a semiconductor electroluminescent device with an InGaAsP-based well layer having tensile strain and with an InGaAlAs-based barrier layer which is high-performance and highly reliable in a wide temperature range. In a multiple-quantum well layer of the semiconductor electroluminescent device, a magnitude of interface strain at an interface between the well layer and the barrier layer is smaller than a magnitude of critical interface strain determined by a layer thickness value which is larger one of a thickness of the well layer and a thickness of the barrier layer.
摘要翻译：提供了具有拉伸应变的具有InGaAlAs的阱层的半导体场致发光器件，或具有拉伸应变的InGaAsP基阱层和具有InGaAlAs基阻挡层的半导体场致发光器件，其在高温下具有高可靠性宽温度范围在半导体电致发光器件的多量子阱层中，阱层和势垒层之间的界面处的界面应变的大小小于由层厚度值确定的临界界面应变的大小，该层厚度值是阱层的厚度和阻挡层的厚度。

6. 发明授权

US07340142B1 Integrated optoelectronic device and method of fabricating the same 有权
标题翻译：集成光电子器件及其制造方法
公开(公告)号：US07340142B1
公开(公告)日：2008-03-04
申请号：US11701467
申请日：2007-02-02
申请人： Kazunori Shinoda , Takashi Shiota , Tomonobu Tsuchiya , Takeshi Kitatani , Masahiro Aoki
发明人： Kazunori Shinoda , Takashi Shiota , Tomonobu Tsuchiya , Takeshi Kitatani , Masahiro Aoki
IPC分类号： G02F1/035 , G02F1/295 , G02B6/26 , G02B6/10 , G02B6/12 , H01L21/00
CPC分类号： G02B6/12004 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , H01S5/0265
摘要： An integrated optoelectronic device includes optical waveguide elements containing InGaAlAs as a principal component, formed on an InP substrate and connected in an end-to-end fashion by butt jointing. An InGaAsP layer is formed on the InP substrate to suppress the mass transport of InP during the fabrication of the integrated optoelectronic device. The InGaAsP layer is formed before the InP substrate is heated at a crystal growth temperature on the order of 700° C. to form the InGaAlAs optical waveguide element.
摘要翻译：集成光电子器件包括含有InGaAlAs作为主要成分的光波导元件，其形成在InP衬底上并且通过对接连接以端对端的方式连接。在InP衬底上形成InGaAsP层，以抑制在集成光电子器件的制造期间InP的质量传输。在InP衬底在约700℃的晶体生长温度下加热之前形成InGaAsP层以形成InGaAlAs光波导元件。

7. 发明申请

US20100288997A1 SEMICONDUCTOR ELECTROLUMINESCENT DEVICE 有权
标题翻译：半导体电致发光器件
公开(公告)号：US20100288997A1
公开(公告)日：2010-11-18
申请号：US12614859
申请日：2009-11-09
申请人： Toshihiko FUKAMACHI , Takashi Shiota , Takeshi Kitatani , Nozomu Yasuhara , Atsushi Nakamura , Mitsuhiro Sawada
发明人： Toshihiko FUKAMACHI , Takashi Shiota , Takeshi Kitatani , Nozomu Yasuhara , Atsushi Nakamura , Mitsuhiro Sawada
IPC分类号： H01L33/00
CPC分类号： H01S5/3434 , B82Y20/00 , H01L33/06 , H01L33/30 , H01S5/3403 , H01S5/3407
摘要： Provided is a semiconductor electroluminescent device with an InGaAlAs-based well layer having tensile strain, or a semiconductor electroluminescent device with an InGaAsP-based well layer having tensile strain and with an InGaAlAs-based barrier layer which is high-performance and highly reliable in a wide temperature range. In a multiple-quantum well layer of the semiconductor electroluminescent device, a magnitude of interface strain at an interface between the well layer and the barrier layer is smaller than a magnitude of critical interface strain determined by a layer thickness value which is larger one of a thickness of the well layer and a thickness of the barrier layer.
摘要翻译：提供了具有拉伸应变的具有InGaAlAs的阱层的半导体场致发光器件，或具有拉伸应变的InGaAsP基阱层和具有InGaAlAs基阻挡层的半导体场致发光器件，其在高温下具有高可靠性宽温度范围在半导体电致发光器件的多量子阱层中，阱层和势垒层之间的界面处的界面应变的大小小于由层厚度值确定的临界界面应变的大小，该层厚度值是阱层的厚度和阻挡层的厚度。

8. 发明授权

US08058739B2 Main circuit of electric power generating apparatus for dispersed power supply 失效
标题翻译：用于分散电源的发电装置的主电路
公开(公告)号：US08058739B2
公开(公告)日：2011-11-15
申请号：US11992448
申请日：2006-09-15
申请人： Takashi Shiota , Keita Tanaka , Tsutomu Isaka
发明人： Takashi Shiota , Keita Tanaka , Tsutomu Isaka
IPC分类号： F03B13/00 , F03B13/10 , H02P9/04 , H02M3/18
CPC分类号： H02P9/14 , F05B2220/7068 , H02J3/382 , H02J3/386 , H02J7/32 , H02K21/48 , H02M7/08 , H02P9/007 , H02P9/02 , H02P2101/10 , H02P2101/15 , Y02E10/725 , Y02E10/763
摘要： In an electric power generating apparatus for dispersed power supply using a permanent magnet type electric power generator having many kinds of windings in order to obtain the maximum output by force of wind without using PWM converter, there is a problem that gap magnetic flux of the permanent magnet type electric power generator is demagnetized to decrease the internal induced voltage because alternating current output of the permanent magnet type electric power generator is lagging current. In an electric power generating apparatus for dispersed power supply including a permanent magnet type electric power generator having a plurality of windings inducing different effective values of induced voltages and individual rectifiers for rectifying alternating current outputs of the permanent magnet type electric power generator, a capacitor is connected in series between the individual rectifier and the alternating current output terminal of the winding inducing higher effective value of induced voltage among the plurality of windings in a manner that serial impedances of the capacitor and the permanent magnet type electric power generator become capacitive within the range of rated rotational speed of said permanent magnet type electric power generator.
摘要翻译：在使用具有多种绕组的永久磁铁式发电机的分散供电用发电装置中，为了在不使用PWM转换器的情况下通过风力获得最大输出，存在永久性的间隙磁通量的问题由于永磁式发电机的交流输出为滞后电流，所以磁铁式发电机被退磁以降低内部感应电压。在包括具有诱发不同有效值的感应电压的多个绕组的永久磁铁式发电机的发电装置和用于整流永磁式发电机的交流输出的各个整流器的电力发电装置中，电容器是串联连接在单个整流器和绕组的交流输出端子之间，以使得电容器和永磁体型发电机的串联阻抗变为在该范围内的电容的方式，从而在多个绕组中感应电压的有效值更高的永磁式发电机的额定转速。

9. 发明申请

US20100232468A1 SEMICONDUCTOR LASER DEVICE 有权
标题翻译：半导体激光器件
公开(公告)号：US20100232468A1
公开(公告)日：2010-09-16
申请号：US12718009
申请日：2010-03-05
申请人： Takashi Shiota , Takesh Kitatani
发明人： Takashi Shiota , Takesh Kitatani
IPC分类号： H01S5/323 , H01S5/026
CPC分类号： H01S5/3434 , B82Y20/00 , H01S5/0265 , H01S5/12 , H01S5/187 , H01S5/2209 , H01S5/2226 , H01S5/2227 , H01S5/2275
摘要： High performance and high reliability of a semiconductor laser device having a buried-hetero structure are achieved. The semiconductor laser device having a buried-hetero structure is manufactured by burying both sides of a mesa structure by a Ru-doped InGaP wide-gap layer and subsequently by a Ru-doped InGaP graded layer whose composition is graded from InGaP to InP, and then, by a Ru-doped InP layer. By providing the Ru-doped InGaP graded layer between the Ru-doped InGaP wide-gap layer and the Ru-doped InP layer, the Ru-doped InGaP wide-gap layer and the Ru-doped InP layer not lattice-matching with each other can be formed as a buried layer with excellent crystallinity.
摘要翻译：实现了具有掩埋异质结构的半导体激光器件的高性能和高可靠性。具有掩埋异质结构的半导体激光器件通过用Ru掺杂的InGaP宽间隙层掩埋台面结构的两面并随后通过组成从InGaP分级为InP的Ru掺杂的InGaP梯度层而制造，以及然后，通过Ru掺杂的InP层。通过在Ru掺杂的InGaP宽间隙层和Ru掺杂的InP层之间提供Ru掺杂的InGaP渐变层，Ru掺杂的InGaP宽间隙层和Ru掺杂的InP层彼此不格子匹配可以形成具有优异结晶度的埋层。

10. 发明申请

US20070291809A1 Semiconductor optical device and manufacturing method thereof 有权
标题翻译：半导体光学器件及其制造方法
公开(公告)号：US20070291809A1
公开(公告)日：2007-12-20
申请号：US11505293
申请日：2006-08-17
申请人： Takashi Shiota , Tomonobu Tsuchiya
发明人： Takashi Shiota , Tomonobu Tsuchiya
IPC分类号： H01S5/00 , H01L21/00
CPC分类号： H01S5/305 , B82Y20/00 , H01L33/305 , H01S5/0265 , H01S5/2226 , H01S5/2275 , H01S5/3054 , H01S5/3211 , H01S5/3215 , H01S5/34313
摘要： The object of the invention is to reduce the deterioration of crystallinity in the vicinity of an active layer when C, which is a p-type dopant, is doped and to suppress the diffusion of Zn, which is a p-type dopant, into an undoped active layer, thus to realize a sharp doping profile. When a Zn-doped InGaAlAs layer having favorable crystallinity is provided between a C-doped InGaAlAs upper-side guiding layer and an undoped active layer, the influence of the C-doped InGaAlAs layer whose crystallinity is lowered can be reduced in the vicinity of the active layer. Further, the Zn diffusion from a Zn-doped InP cladding layer can be suppressed by the C-doped InGaAlAs layer.
摘要翻译：本发明的目的是为了减少作为p型掺杂剂的C被掺杂时的活性层附近的结晶劣化，并抑制作为p型掺杂剂的Zn的扩散为未掺杂的有源层，从而实现清晰的掺杂分布。当在C掺杂的InGaAlAs上侧引导层和未掺杂的有源层之间提供具有良好结晶度的Zn掺杂的InGaAlAs层时，可以降低结晶度降低的C掺杂InGaAlAs层的影响活动层此外，可以通过C掺杂的InGaAlAs层来抑制来自Zn掺杂的InP包层的Zn扩散。

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