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1. 发明授权

US10797470B2 Light emitting device and method of manufacturing light emitting device 有权
公开(公告)号：US10797470B2
公开(公告)日：2020-10-06
申请号：US16504758
申请日：2019-07-08
申请人： Takeshi Kawashima , Shunichi Sato
发明人： Takeshi Kawashima , Shunichi Sato
IPC分类号： H01S5/00 , H01S5/30 , H01S5/343 , H01S5/323
摘要： A light emitting device includes: a first n-type semiconductor layer disposed on a substrate; a tunnel junction layer disposed on a part of the first n-type semiconductor layer; a p-type semiconductor layer disposed on the first n-type semiconductor layer and covering the tunnel junction layer; an active layer disposed on the p-type semiconductor layer; and a second n-type semiconductor layer disposed on the active layer.

2. 发明申请

US20190273360A1 REFLECTOR, SURFACE EMITTING LASER, METHOD FOR MANUFACTURING REFLECTOR, AND METHOD FOR MANUFACTURING SURFACE EMITTING LASER 审中-公开
公开(公告)号：US20190273360A1
公开(公告)日：2019-09-05
申请号：US16287541
申请日：2019-02-27
申请人： Takeshi Kawashima , Shunichi Sato , Morimasa Kaminishi , Hirokazu Iwata
发明人： Takeshi Kawashima , Shunichi Sato , Morimasa Kaminishi , Hirokazu Iwata
IPC分类号： H01S5/183 , H01S5/22 , H01S5/024 , H01S5/343 , H01S5/42 , G03B21/20 , F21S41/16 , F21S41/176
摘要： A reflector includes a low refractive index layer and a high refractive index layer. The low refractive index layer has a first average refractive index and has a laminated structure in which an AlN layer and a GaN layer are alternately laminated. The high refractive index layer has a second average refractive index higher than the first average refractive index and includes an InGaN layer.

3. 发明授权

US08791025B2 Method of producing microstructure of nitride semiconductor and photonic crystal prepared according to the method 有权
标题翻译：根据该方法制备氮化物半导体和光子晶体微结构的方法
公开(公告)号：US08791025B2
公开(公告)日：2014-07-29
申请号：US13002627
申请日：2010-07-27
申请人： Shoichi Kawashima , Takeshi Kawashima , Yasuhiro Nagatomo , Katsuyuki Hoshino
发明人： Shoichi Kawashima , Takeshi Kawashima , Yasuhiro Nagatomo , Katsuyuki Hoshino
IPC分类号： H01L21/302
CPC分类号： H01L29/2003 , B82Y20/00 , G02B6/1225 , G02B6/136 , H01L21/0237 , H01L21/02458 , H01L21/02513 , H01L21/02516 , H01L21/0254 , H01L21/02658 , H01L21/02667 , H01L29/045 , H01S5/105 , H01S5/2095 , H01S5/32341
摘要： The method of producing a GaN-based microstructure includes a step of preparing a semiconductor structure provided with a trench formed in a main surface of the nitride semiconductor and a heat-treating mask covering a main surface of the nitride semiconductor excluding the trench, a first heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the trench, a step of removing the heat-treating mask after the first heat-treatment step and a second heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the trench on the sidewall of which the crystallographic face is formed with a nitride semiconductor.
摘要翻译：制造GaN基微结构的方法包括制备在氮化物半导体的主表面上形成有沟槽的半导体结构和覆盖除了沟槽之外的氮化物半导体的主表面的热处理掩模的步骤，第一在包含氮元素的气氛下对半导体结构进行热处理的热处理工序，在沟槽的侧壁的至少一部分上形成氮化物半导体的结晶面，在第一工序之后，除去热处理罩热处理步骤和在包含氮元素的气氛下对半导体结构进行热处理的第二热处理步骤，以在氮化物半导体的形成有结晶面的侧壁上封闭沟槽的上部。

4. 发明申请

US20130163628A1 PROCESS FOR FORMING MICROSTRUCTURE OF NITRIDE SEMICONDUCTOR, SURFACE EMITTING LASER USING TWO-DIMENSIONAL PHOTONIC CRYSTAL AND PRODUCTION PROCESS THEREOF 有权
标题翻译：使用二维光子晶体形成氮化物半导体的微结构，表面发射激光的方法及其制备方法
公开(公告)号：US20130163628A1
公开(公告)日：2013-06-27
申请号：US13606419
申请日：2012-09-07
申请人： Katsuyuki Hoshino , Yasuhiro Nagatomo , Shoichi Kawashima , Takeshi Kawashima
发明人： Katsuyuki Hoshino , Yasuhiro Nagatomo , Shoichi Kawashima , Takeshi Kawashima
IPC分类号： H01L21/20 , H01S5/02 , H01L33/02
CPC分类号： G02B6/1225 , B82Y20/00 , G02B2006/12107 , G02B2006/12169 , G02B2006/12176 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/32 , H01L2933/0083 , H01S5/105 , H01S5/32341
摘要： A process for forming a microstructure of a nitride semiconductor including (1) preparing a semiconductor structure which has a second semiconductor layer formed of a group III nitride semiconductor containing at least Al formed on a principal plane of a first semiconductor layer formed of a group III nitride semiconductor containing no Al, and which has a hole that penetrates through the second semiconductor layer and is formed in the first semiconductor layer; (2) subjecting the semiconductor structure to heat treatment under a gas atmosphere including a nitrogen element after step (1) to form a crystal plane of the group III nitride semiconductor containing no Al, on at least a part of a side wall of the hole; and (3) forming a third semiconductor layer formed of a group III nitride semiconductor on the second semiconductor layer after step (2) to cover the upper part of the hole.
摘要翻译：一种用于形成氮化物半导体的微结构的方法，包括（1）制备半导体结构，所述半导体结构具有由在由III族形成的第一半导体层的主平面上形成的至少包含Al的III族氮化物半导体形成的第二半导体层不含Al的氮化物半导体，其具有穿过第二半导体层并形成在第一半导体层中的孔; （2）在步骤（1）之后对包含氮元素的气体气氛进行半导体结构的热处理，以在孔的侧壁的至少一部分上形成不含Al的III族氮化物半导体的晶面 ; 以及（3）在步骤（2）之后，在所述第二半导体层上形成由III族氮化物半导体形成的第三半导体层以覆盖所述孔的上部。

5. 发明申请

US20120269224A1 DISTRIBUTED FEEDBACK SURFACE EMITTING LASER 有权
标题翻译：分布式反馈表面发射激光
公开(公告)号：US20120269224A1
公开(公告)日：2012-10-25
申请号：US13444118
申请日：2012-04-11
申请人： Yasuhiro Nagatomo , Takeshi Kawashima
发明人： Yasuhiro Nagatomo , Takeshi Kawashima
IPC分类号： H01S3/08 , H01S3/13
CPC分类号： H01S5/105 , B82Y20/00 , H01S5/0425 , H01S5/0655 , H01S5/18 , H01S5/2022 , H01S5/2031 , H01S5/34333
摘要： A photonic crystal surface emitting laser array reduces the occurrence of reflected feedback light while also reducing input of leaking light. The photonic crystal surface emitting laser array includes a plurality of first photonic crystal regions that cause laser oscillation, a second photonic crystal region that causes light diffraction to occur in an out-of-plane direction, and a light absorber that is provided above the second photonic crystal region and that absorbs light having a wavelength λ. A radiation coefficient of each first photonic crystal region is smaller than a radiation coefficient of the second photonic crystal region.
摘要翻译：光子晶体表面发射激光器阵列减少了反射反射光的发生，同时还减少了泄漏光的输入。光子晶体表面发射激光器阵列包括引起激光振荡的多个第一光子晶体区域，使得在平面外方向上发生光衍射的第二光子晶体区域，以及设置在第二光子晶体区域上方的光吸收体光子晶体区域并且吸收具有波长λ的光。每个第一光子晶体区域的辐射系数小于第二光子晶体区域的辐射系数。

6. 发明授权

US08129210B2 Manufacturing method of microstructure 有权
标题翻译：微观结构的制造方法
公开(公告)号：US08129210B2
公开(公告)日：2012-03-06
申请号：US12914939
申请日：2010-10-28
申请人： Takeshi Kawashima , Katsuyuki Hoshino , Shoichi Kawashima , Yasuhiro Nagatomo
发明人： Takeshi Kawashima , Katsuyuki Hoshino , Shoichi Kawashima , Yasuhiro Nagatomo
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/0259 , H01L21/0262 , H01L21/02667 , H01S5/105 , H01S5/183 , H01S2304/04
摘要： A manufacturing method of a microstructure which enables production of a deep and narrow microstructure in a GaN semiconductor with high precision is provided. The manufacturing method of a microstructure for forming a microscopic structure in a semiconductor has a configuration having a first step of forming a first GaN semiconductor layer on a substrate, a second step of forming a first hole by using etching on the first GaN semiconductor layer formed in the first narrow, and a third step of performing heat-treatment at a temperature from 850° C. to 950° C. inclusive under a gas atmosphere including nitrogen, in order to form a second narrow in which a diameter of the first hole h formed in the second step is made narrower than the diameter of the first hole in an in-plane direction of the substrate.
摘要翻译：提供了能够高精度地生产GaN半导体中的深而窄的微结构的微结构的制造方法。用于在半导体中形成微结构的显微组织的制造方法具有在基板上形成第一GaN半导体层的第一步骤的结构，通过在形成的第一GaN半导体层上的蚀刻来形成第一孔的第二步骤以及在包括氮气的气体气氛下在850℃至950℃的温度下进行热处理的第一窄度和第三步骤，以形成第二狭缝，其中第一孔的直径 h形成为比基板的面内方向上的第一孔的直径窄。

7. 发明申请

US20050257644A1 Refining agent and refining method 审中-公开
标题翻译：精炼剂和精炼方法
公开(公告)号：US20050257644A1
公开(公告)日：2005-11-24
申请号：US10363717
申请日：2001-09-14
申请人： Yoshie Nakai , Takeshi Murai , Hidetoshi Matsuno , Yoshiteru Kikuchi , Kenji Takahashi , Yoichi Nimura , Hiroshi Shimizu , Tomoo Isawa , Takeshi Kawashima , Tatsuya Okamura
发明人： Yoshie Nakai , Takeshi Murai , Hidetoshi Matsuno , Yoshiteru Kikuchi , Kenji Takahashi , Yoichi Nimura , Hiroshi Shimizu , Tomoo Isawa , Takeshi Kawashima , Tatsuya Okamura
IPC分类号： C21B3/04 , C21C1/02 , C21C7/04 , C21C7/06 , C21C7/064 , C21C7/072 , C21C7/076
CPC分类号： C21C7/076 , C21B3/04 , C21C1/025 , C21C7/04 , C21C7/06 , C21C7/0645 , C21C7/072 , Y02P10/216 , Y02P10/242 , Y02W30/542
摘要： A refining agent contains Al, MgO, and CaO as main components, and uses dolomite as a MgO source and CaO source. When the refining agent is supplied into molten iron, it produces Mg vapor due to a reaction in the molten iron, and causes a refining reaction by the Mg vapor.
摘要翻译：精炼剂含有Al，MgO和CaO作为主要成分，并使用白云石作为MgO源和CaO源。当精炼剂被供应到铁水中时，由于铁水中的反应而产生Mg蒸气，并且通过Mg蒸汽引起精炼反应。

8. 发明授权

US08861564B2 Distributed feedback surface emitting laser 有权
标题翻译：分布式反馈表面发射激光器
公开(公告)号：US08861564B2
公开(公告)日：2014-10-14
申请号：US13444118
申请日：2012-04-11
申请人： Yasuhiro Nagatomo , Takeshi Kawashima
发明人： Yasuhiro Nagatomo , Takeshi Kawashima
IPC分类号： H01S3/08 , H01S5/10 , H01S5/343 , H01S5/20 , H01S5/042 , H01S5/18 , H01S5/065
CPC分类号： H01S5/105 , B82Y20/00 , H01S5/0425 , H01S5/0655 , H01S5/18 , H01S5/2022 , H01S5/2031 , H01S5/34333
摘要： A photonic crystal surface emitting laser array reduces the occurrence of reflected feedback light while also reducing input of leaking light. The photonic crystal surface emitting laser array includes a plurality of first photonic crystal regions that cause laser oscillation, a second photonic crystal region that causes light diffraction to occur in an out-of-plane direction, and a light absorber that is provided above the second photonic crystal region and that absorbs light having a wavelength λ. A radiation coefficient of each first photonic crystal region is smaller than a radiation coefficient of the second photonic crystal region.
摘要翻译：光子晶体表面发射激光器阵列减少了反射反射光的发生，同时还减少了泄漏光的输入。光子晶体表面发射激光器阵列包括引起激光振荡的多个第一光子晶体区域，使得在平面外方向上发生光衍射的第二光子晶体区域，以及设置在第二光子晶体区域并且吸收具有波长λ的光。每个第一光子晶体区域的辐射系数小于第二光子晶体区域的辐射系数。

9. 发明申请

US20130112384A1 HEAT EXCHANGER 有权
标题翻译：热交换器
公开(公告)号：US20130112384A1
公开(公告)日：2013-05-09
申请号：US13643160
申请日：2010-04-26
申请人： Hidekatsu Naruse , Yoichi Kojima , Shinya Otsubo , Masaru Shimazaki , Takeshi Kawashima , Hiroaki Sasaki
发明人： Hidekatsu Naruse , Yoichi Kojima , Shinya Otsubo , Masaru Shimazaki , Takeshi Kawashima , Hiroaki Sasaki
IPC分类号： F28F9/02
CPC分类号： F28F9/02 , F24D19/0095 , F24H8/00 , F24H9/0015 , F24H9/146 , F24H9/16 , F28D1/0477 , F28D7/024 , F28D2021/0024 , F28F1/08 , F28F9/0278 , F28F2265/06 , Y02B30/102
摘要： Provided are a heat exchanger that does not impede downsizing and removes water in the heat absorbing pipe adequately with a simple configuration even when the reduction in diameter of the heat absorbing pipe is made. A heat exchanger 5 in which heat absorbing pipes 51 are disposed in a multi-tier arrangement within a casing 50 which is the passage of combustion exhaust gas, both pipe ends 511,512 of each of the heat absorbing pipes 51 are connected respectively to two headers 54, 55 provided on a side plate 52 of the casing 50, and water introduced from an external pipe 63 to each of the heat absorbing pipes 51 through the header 54 is heat-exchanged and heated by combustion exhaust gas. The pipe ends 511, 512 of the heat absorbing pipes 51 are arranged at a predetermined vertical interval. A drainage plate 56 for forming a drainage passage through which the water that has reached the pipe end openings 51A of respective heat absorbing pipes 51 is removed during drainage operation for the heat absorbing pipes 51, is disposed in the header 54 disposed on a lower side of the heat absorbing pipes 51 so as to face a number of the pipe end openings 51A vertically arranged in a state of continuous.
摘要翻译：提供一种热交换器，即使在制造吸热管的直径减小时，也能够以简单的结构适当地阻碍小型化和除去吸热管内的水分。热交换器5，其中吸热管51以多层布置的方式设置在作为燃烧废气的通道的壳体50内，每个吸热管51的两个管端511,512分别连接到两个集管54 55，设置在壳体50的侧板52上，并且通过集管54从外管63向每个吸热管51引入的水被燃烧废气进行热交换和加热。吸热管51的管端511,512以预定的垂直间隔排列。用于形成排水通道，在吸热管51的排水操作期间，除去已经到达吸热管51的管端开口51A的水的排水通道，设置在下侧的吸热管51，以与连续的状态垂直配置的多个管端开口51A相对。

10. 发明申请

US20120212461A1 OPERATION SUPPORT SYSTEM, IN-VEHICLE APPARATUS AND PORTABLE TERMINAL 有权
标题翻译：操作支持系统，车载设备和便携式终端
公开(公告)号：US20120212461A1
公开(公告)日：2012-08-23
申请号：US13400260
申请日：2012-02-20
申请人： Daigo Akutsu , Takeshi Kawashima
发明人： Daigo Akutsu , Takeshi Kawashima
IPC分类号： G09G5/00
CPC分类号： G06F3/041 , B60K35/00 , B60K37/06 , B60K2350/104 , G01C21/3664 , G06F1/1643 , G06F3/016 , G06F3/03548 , G09G2380/10
摘要： A portable terminal receives a user operation on a terminal screen of the portable terminal in a portable terminal normal mode. After receiving the user operation, the portable terminal shifts from a portable terminal normal mode to a portable terminal in-operation state, in which the portable terminal sends out a portable terminal in-operation notice to an in-vehicle apparatus. The in-vehicle apparatus shifts to a portable terminal in-operation mode upon receiving the notice from the portable terminal, and invalidates a reaction force by a reaction force generation unit to transit to a portable terminal normal state.
摘要翻译：便携式终端在便携式终端正常模式下在便携式终端的终端屏幕上接收用户操作。在便携式终端在接收到用户操作之后，从便携式终端正常模式转移到便携式终端在工作状态，其中便携式终端向车载设备发送便携式终端操作通知。在从便携式终端接收到通知的情况下，车载装置转移到便携式终端工作模式，并且由反作用力产生单元使反作用力无效转移到便携式终端正常状态。

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