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1. 发明申请

US20090015573A1 Plasma display apparatus and semiconductor device 审中-公开
标题翻译：等离子体显示装置和半导体装置
公开(公告)号：US20090015573A1
公开(公告)日：2009-01-15
申请号：US12216735
申请日：2008-07-10
申请人： Takuo Nagase , Mutsuhiro Mori , Junichi Sakano
发明人： Takuo Nagase , Mutsuhiro Mori , Junichi Sakano
IPC分类号： G06F3/038 , G09G3/28
CPC分类号： G09G3/2965 , G09G3/294 , G09G2320/043 , H01J11/12 , H01J11/38
摘要： A plasma display apparatus having a plurality of display cells for prolonging the luminous brightness lifetime in the single-sided drive mode has a first sustaining electrode, a second sustaining electrode connected to reference potential and cooperating with the first sustaining electrode to perform sustain discharge through a discharge space of a display cell, and an address electrode, an electrical capacitance set up between the second sustaining electrode and the discharge space is larger than that set up between the first sustaining electrode and the discharge space.
摘要翻译：具有用于延长单面驱动模式下的发光亮度寿命的多个显示单元的等离子体显示装置具有第一维持电极，连接到参考电位的第二维持电极，并与第一维持电极配合，以通过一个显示单元的放电空间和寻址电极，设置在第二维持电极和放电空间之间的电容大于在第一维持电极和放电空间之间设置的电容。

2. 发明授权

US07773050B2 Semiconductor device and plasma display device using the same 有权
标题翻译：半导体器件和使用其的等离子体显示器件
公开(公告)号：US07773050B2
公开(公告)日：2010-08-10
申请号：US11955507
申请日：2007-12-13
申请人： Takuo Nagase , Mutsuhiro Mori
发明人： Takuo Nagase , Mutsuhiro Mori
IPC分类号： G09G3/28
CPC分类号： G09G3/2965
摘要： To provide an AC-PDP capable of achieving low power consumption and low cost, a driving method is adopted in which, during a period of sustaining light emission of the AC-PDP, an electrode of one side of the panel is fixed at a predetermined potential, and positive and negative voltages are alternately applied to an electrode of the other side of the panel. In addition, an IGBT is used as a switch element. Thus, with a half-bridge driving method using an IGBT as a switch element, it is possible to simultaneously achieve a reduction in loss of a driving circuit of the AC-PDP and a reduction in the number of components thereof, such reductions not being able to be achieved by the conventional techniques.
摘要翻译：为了提供能够实现低功耗和低成本的AC-PDP，采用驱动方法，其中在AC-PDP的发光持续时间期间，将面板的一侧的电极固定在预定的电位和正负电压交替施加到面板另一侧的电极。另外，使用IGBT作为开关元件。因此，通过使用IGBT作为开关元件的半桥驱动方法，可以同时实现AC-PDP的驱动电路的损耗的减少和其部件数量的减少，这样的减少不是能够通过常规技术实现。

3. 发明授权

US07602045B2 Semiconductor device and inverter device using the same 有权
标题翻译：半导体装置及其逆变装置使用相同
公开(公告)号：US07602045B2
公开(公告)日：2009-10-13
申请号：US11624723
申请日：2007-01-19
申请人： Takuo Nagase , Mutsuhiro Mori
发明人： Takuo Nagase , Mutsuhiro Mori
IPC分类号： H01L29/74 , H01L29/76
CPC分类号： H01L29/7395 , H01L21/268 , H01L27/0664 , H01L29/861
摘要： In a semiconductor device having a pair of IGBT and diode which are connected to each other in inverse-parallel in which a collector-electrode of the IGBT and a cathode-electrode of the diode are wired to each other, and an emitter-electrode of the IGBT and an anode-electrode of the diode are wired to each other, when a breakdown voltage of a junction of a p-type emitter layer and an n-type buffer layer of the IGBT is represented as BVec, and a forward voltage occurring while the diode transits from a state of blocking to a state of forward conduction is represented as VF, a relationship of VF
摘要翻译：在具有一对IGBT和二极管的半导体器件中，IGBT和二极管彼此并联连接，其中IGBT的集电极和二极管的阴极电极彼此连接，发射极当IGBT的p型发射极层和n型缓冲层的结的击穿电压表示为BVec时，二极管的IGBT和阳极电极彼此连接，并且发生正向电压当二极管从阻塞状态转移到正向传导状态时，VF表示为在二极管中流动的电流的预定电流值Id中的VF

4. 发明申请

US20080143265A1 Semiconductor Device and Plasma Display Device Using the Same 有权
标题翻译：半导体装置及其等离子体显示装置
公开(公告)号：US20080143265A1
公开(公告)日：2008-06-19
申请号：US11955507
申请日：2007-12-13
申请人： Takuo Nagase , Mutsuhiro Mori
发明人： Takuo Nagase , Mutsuhiro Mori
IPC分类号： G09G3/10
CPC分类号： G09G3/2965
摘要： To provide an AC-PDP capable of achieving low power consumption and low cost, a driving method is adopted in which, during a period of sustaining light emission of the AC-PDP, an electrode of one side of the panel is fixed at a predetermined potential, and positive and negative voltages are alternately applied to an electrode of the other side of the panel. In addition, an IGBT is used as a switch element. Thus, with a half-bridge driving method using an IGBT as a switch element, it is possible to simultaneously achieve a reduction in loss of a driving circuit of the AC-PDP and a reduction in the number of components thereof, such reductions not being able to be achieved by the conventional techniques.
摘要翻译：为了提供能够实现低功耗和低成本的AC-PDP，采用驱动方法，其中在AC-PDP的发光持续时间期间，将面板的一侧的电极固定在预定的电位和正负电压交替施加到面板另一侧的电极。另外，使用IGBT作为开关元件。因此，通过使用IGBT作为开关元件的半桥驱动方法，可以同时实现AC-PDP的驱动电路的损耗的减少和其部件数量的减少，这样的减少不是能够通过常规技术实现。

5. 发明申请

US20090167748A1 PLASMA DISPLAY APPARATUS, DRIVING METHOD THEREOF AND DRIVING IC 审中-公开
标题翻译：等离子体显示装置，其驱动方法及驱动IC
公开(公告)号：US20090167748A1
公开(公告)日：2009-07-02
申请号：US12342457
申请日：2008-12-23
申请人： Mutsuhiro MORI , Takuo Nagase
发明人： Mutsuhiro MORI , Takuo Nagase
IPC分类号： G09G5/00 , G09G3/28
CPC分类号： G09G3/296 , G09G3/294 , G09G2320/0233 , G09G2330/021 , G09G2330/028
摘要： A plasma display apparatus wherein during the period for which the lighting of the AC type PDP panel is sustained, the electrodes on one side of the panel are maintained at a constant potential whereas the electrodes on the other side of the panel are supplied alternately with a positive voltage and a negative voltage, the plasma display apparatus having a means that feeds power flowing toward the address power source into a separate power source.
摘要翻译：一种等离子体显示装置，其中在AC型PDP面板的点亮持续的时间段期间，面板一侧的电极保持恒定电位，而面板另一侧的电极交替地供给正电压和负电压，等离子体显示装置具有将朝向地址电源流动的功率馈送到单独的电源的装置。

6. 发明申请

US20070194346A1 SEMICONDUCTOR DEVICE AND INVERTER DEVICE USING THE SAME 有权
标题翻译：使用其的半导体器件和反相器器件
公开(公告)号：US20070194346A1
公开(公告)日：2007-08-23
申请号：US11624723
申请日：2007-01-19
申请人： Takuo Nagase , Mutsuhiro Mori
发明人： Takuo Nagase , Mutsuhiro Mori
IPC分类号： H01L29/74
CPC分类号： H01L29/7395 , H01L21/268 , H01L27/0664 , H01L29/861
摘要： In a semiconductor device having a pair of IGBT and diode which are connected to each other in inverse-parallel in which a collector-electrode of the IGBT and a cathode-electrode of the diode are wired to each other, and an emitter-electrode of the IGBT and an anode-electrode of the diode are wired to each other, when a breakdown voltage of a junction of a p-type emitter layer and an n-type buffer layer of the IGBT is represented as BVec, and a forward voltage occurring while the diode transits from a state of blocking to a state of forward conduction is represented as VF, a relationship of VF
摘要翻译：在具有一对IGBT和二极管的半导体器件中，IGBT和二极管彼此并联连接，其中IGBT的集电极和二极管的阴极电极彼此连接，发射极当IGBT的p型发射极层和n型缓冲层的结的击穿电压表示为BVec时，二极管的IGBT和阳极电极彼此连接，并且发生正向电压当二极管从阻塞状态转移到正向传导状态时，VF表示为在二极管中流动的电流的预定电流值Id中的VF

7. 发明申请

US20120018776A1 SEMICONDUCTOR INTEGRATED CIRCUIT 失效
标题翻译：半导体集成电路
公开(公告)号：US20120018776A1
公开(公告)日：2012-01-26
申请号：US13187552
申请日：2011-07-21
申请人： Takuo Nagase , Junichi Sakano
发明人： Takuo Nagase , Junichi Sakano
IPC分类号： H01L29/78 , H01L29/861 , H01L29/739
CPC分类号： H01L29/7824 , H01L21/76264 , H01L29/0615 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/42368 , H01L29/4238 , H01L29/7391 , H01L29/7394
摘要： A first annular isolation trench is formed in a periphery of an element region, and a second annular isolation trench is formed around the first annular isolation trench with a predetermined distance provided from the first annular isolation trench, and a semiconductor layer between the first annular isolation trench and the second annular isolation trench is separated into a plurality of portions by a plurality of linear isolation trenches formed in the semiconductor layer between the first annular isolation trench and the second annular isolation trench, and the semiconductor layer (source-side isolation region) which opposes a p-type channel layer end portion and is located between the first annular isolation trench and the second annular isolation trench is separated from other semiconductor layers (drain-side isolation regions) by the linear isolation trenches.
摘要翻译：第一环形隔离沟槽形成在元件区域的周边中，并且第二环形隔离沟槽围绕第一环形隔离沟槽以从第一环形隔离沟槽提供的预定距离形成，并且在第一环形隔离沟槽之间的半导体层并且所述第二环形隔离沟槽通过形成在所述第一环形隔离沟槽和所述第二环形隔离沟槽之间的所述半导体层中的多个线性隔离沟槽分离成多个部分，并且所述半导体层（源极侧隔离区域）与第一环形隔离沟槽和第二环形隔离沟槽之间的p型沟道层端部相对的区域通过线性隔离沟槽与其它半导体层（漏极侧隔离区域）分离。

8. 发明授权

US08698194B2 Semiconductor integrated circuit with high withstand voltage element forming trench isolation on substrate 失效
标题翻译：具有高耐压元件的半导体集成电路在衬底上形成沟槽隔离
公开(公告)号：US08698194B2
公开(公告)日：2014-04-15
申请号：US13187552
申请日：2011-07-21
申请人： Takuo Nagase , Junichi Sakano
发明人： Takuo Nagase , Junichi Sakano
IPC分类号： H01L29/66 , H01L21/70 , H01L27/12
CPC分类号： H01L29/7824 , H01L21/76264 , H01L29/0615 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/42368 , H01L29/4238 , H01L29/7391 , H01L29/7394
摘要： A first annular isolation trench is formed in a periphery of an element region, and a second annular isolation trench is formed around the first annular isolation trench with a predetermined distance provided from the first annular isolation trench, and a semiconductor layer between the first annular isolation trench and the second annular isolation trench is separated into a plurality of portions by a plurality of linear isolation trenches formed in the semiconductor layer between the first annular isolation trench and the second annular isolation trench, and the semiconductor layer (source-side isolation region) which opposes a p-type channel layer end portion and is located between the first annular isolation trench and the second annular isolation trench is separated from other semiconductor layers (drain-side isolation regions) by the linear isolation trenches.
摘要翻译：第一环形隔离沟槽形成在元件区域的周边中，并且第二环形隔离沟槽围绕第一环形隔离沟槽以从第一环形隔离沟槽提供的预定距离形成，并且在第一环形隔离沟槽之间的半导体层并且所述第二环形隔离沟槽通过形成在所述第一环形隔离沟槽和所述第二环形隔离沟槽之间的所述半导体层中的多个线性隔离沟槽分离成多个部分，并且所述半导体层（源极侧隔离区域）与第一环形隔离沟槽和第二环形隔离沟槽之间的p型沟道层端部相对的区域通过线性隔离沟槽与其它半导体层（漏极侧隔离区域）分离。

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