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1. 发明申请

US20100149165A1 PLASMA DISPLAY DEVICE AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：等离子体显示器件和半导体器件
公开(公告)号：US20100149165A1
公开(公告)日：2010-06-17
申请号：US12609258
申请日：2009-10-30
申请人： Takuo NAGASE , Mutsuhiro Mori
发明人： Takuo NAGASE , Mutsuhiro Mori
IPC分类号： G09G3/28 , G09G5/00
CPC分类号： G09G3/296 , G09G3/2927 , G09G3/293 , G09G3/2942 , G09G2310/0289 , G09G2330/021 , G09G2330/028
摘要： A plasma display device of the present invention having a plurality of display cells, comprises a X electrode kept at a reference voltage, a Y electrode, an address electrode, the X electrode and the Y electrode between which sustain discharge occurs, and an address driver comprising a first switch element Q2 for outputting a low level voltage, a second switch element Q1 for outputting a high level voltage, whose withstand voltage of the second switch element is lower than the first switch element, and a diode inserted and connected between the address electrode and the second switch element.
摘要翻译：具有多个显示单元的本发明的等离子体显示装置包括保持在参考电压的X电极，Y电极，寻址电极，X电极和发生维持放电的Y电极与地址驱动器包括用于输出低电平电压的第一开关元件Q2，用于输出第二开关元件的耐受电压低于第一开关元件的高电平电压的第二开关元件Q1和插入并连接在地址电极和第二开关元件。

2. 发明申请

US20090015573A1 Plasma display apparatus and semiconductor device 审中-公开
标题翻译：等离子体显示装置和半导体装置
公开(公告)号：US20090015573A1
公开(公告)日：2009-01-15
申请号：US12216735
申请日：2008-07-10
申请人： Takuo Nagase , Mutsuhiro Mori , Junichi Sakano
发明人： Takuo Nagase , Mutsuhiro Mori , Junichi Sakano
IPC分类号： G06F3/038 , G09G3/28
CPC分类号： G09G3/2965 , G09G3/294 , G09G2320/043 , H01J11/12 , H01J11/38
摘要： A plasma display apparatus having a plurality of display cells for prolonging the luminous brightness lifetime in the single-sided drive mode has a first sustaining electrode, a second sustaining electrode connected to reference potential and cooperating with the first sustaining electrode to perform sustain discharge through a discharge space of a display cell, and an address electrode, an electrical capacitance set up between the second sustaining electrode and the discharge space is larger than that set up between the first sustaining electrode and the discharge space.
摘要翻译：具有用于延长单面驱动模式下的发光亮度寿命的多个显示单元的等离子体显示装置具有第一维持电极，连接到参考电位的第二维持电极，并与第一维持电极配合，以通过一个显示单元的放电空间和寻址电极，设置在第二维持电极和放电空间之间的电容大于在第一维持电极和放电空间之间设置的电容。

3. 发明授权

US07773050B2 Semiconductor device and plasma display device using the same 有权
标题翻译：半导体器件和使用其的等离子体显示器件
公开(公告)号：US07773050B2
公开(公告)日：2010-08-10
申请号：US11955507
申请日：2007-12-13
申请人： Takuo Nagase , Mutsuhiro Mori
发明人： Takuo Nagase , Mutsuhiro Mori
IPC分类号： G09G3/28
CPC分类号： G09G3/2965
摘要： To provide an AC-PDP capable of achieving low power consumption and low cost, a driving method is adopted in which, during a period of sustaining light emission of the AC-PDP, an electrode of one side of the panel is fixed at a predetermined potential, and positive and negative voltages are alternately applied to an electrode of the other side of the panel. In addition, an IGBT is used as a switch element. Thus, with a half-bridge driving method using an IGBT as a switch element, it is possible to simultaneously achieve a reduction in loss of a driving circuit of the AC-PDP and a reduction in the number of components thereof, such reductions not being able to be achieved by the conventional techniques.
摘要翻译：为了提供能够实现低功耗和低成本的AC-PDP，采用驱动方法，其中在AC-PDP的发光持续时间期间，将面板的一侧的电极固定在预定的电位和正负电压交替施加到面板另一侧的电极。另外，使用IGBT作为开关元件。因此，通过使用IGBT作为开关元件的半桥驱动方法，可以同时实现AC-PDP的驱动电路的损耗的减少和其部件数量的减少，这样的减少不是能够通过常规技术实现。

4. 发明授权

US07602045B2 Semiconductor device and inverter device using the same 有权
标题翻译：半导体装置及其逆变装置使用相同
公开(公告)号：US07602045B2
公开(公告)日：2009-10-13
申请号：US11624723
申请日：2007-01-19
申请人： Takuo Nagase , Mutsuhiro Mori
发明人： Takuo Nagase , Mutsuhiro Mori
IPC分类号： H01L29/74 , H01L29/76
CPC分类号： H01L29/7395 , H01L21/268 , H01L27/0664 , H01L29/861
摘要： In a semiconductor device having a pair of IGBT and diode which are connected to each other in inverse-parallel in which a collector-electrode of the IGBT and a cathode-electrode of the diode are wired to each other, and an emitter-electrode of the IGBT and an anode-electrode of the diode are wired to each other, when a breakdown voltage of a junction of a p-type emitter layer and an n-type buffer layer of the IGBT is represented as BVec, and a forward voltage occurring while the diode transits from a state of blocking to a state of forward conduction is represented as VF, a relationship of VF
摘要翻译：在具有一对IGBT和二极管的半导体器件中，IGBT和二极管彼此并联连接，其中IGBT的集电极和二极管的阴极电极彼此连接，发射极当IGBT的p型发射极层和n型缓冲层的结的击穿电压表示为BVec时，二极管的IGBT和阳极电极彼此连接，并且发生正向电压当二极管从阻塞状态转移到正向传导状态时，VF表示为在二极管中流动的电流的预定电流值Id中的VF

5. 发明申请

US20080143265A1 Semiconductor Device and Plasma Display Device Using the Same 有权
标题翻译：半导体装置及其等离子体显示装置
公开(公告)号：US20080143265A1
公开(公告)日：2008-06-19
申请号：US11955507
申请日：2007-12-13
申请人： Takuo Nagase , Mutsuhiro Mori
发明人： Takuo Nagase , Mutsuhiro Mori
IPC分类号： G09G3/10
CPC分类号： G09G3/2965
摘要： To provide an AC-PDP capable of achieving low power consumption and low cost, a driving method is adopted in which, during a period of sustaining light emission of the AC-PDP, an electrode of one side of the panel is fixed at a predetermined potential, and positive and negative voltages are alternately applied to an electrode of the other side of the panel. In addition, an IGBT is used as a switch element. Thus, with a half-bridge driving method using an IGBT as a switch element, it is possible to simultaneously achieve a reduction in loss of a driving circuit of the AC-PDP and a reduction in the number of components thereof, such reductions not being able to be achieved by the conventional techniques.
摘要翻译：为了提供能够实现低功耗和低成本的AC-PDP，采用驱动方法，其中在AC-PDP的发光持续时间期间，将面板的一侧的电极固定在预定的电位和正负电压交替施加到面板另一侧的电极。另外，使用IGBT作为开关元件。因此，通过使用IGBT作为开关元件的半桥驱动方法，可以同时实现AC-PDP的驱动电路的损耗的减少和其部件数量的减少，这样的减少不是能够通过常规技术实现。

6. 发明申请

US20070194346A1 SEMICONDUCTOR DEVICE AND INVERTER DEVICE USING THE SAME 有权
标题翻译：使用其的半导体器件和反相器器件
公开(公告)号：US20070194346A1
公开(公告)日：2007-08-23
申请号：US11624723
申请日：2007-01-19
申请人： Takuo Nagase , Mutsuhiro Mori
发明人： Takuo Nagase , Mutsuhiro Mori
IPC分类号： H01L29/74
CPC分类号： H01L29/7395 , H01L21/268 , H01L27/0664 , H01L29/861
摘要： In a semiconductor device having a pair of IGBT and diode which are connected to each other in inverse-parallel in which a collector-electrode of the IGBT and a cathode-electrode of the diode are wired to each other, and an emitter-electrode of the IGBT and an anode-electrode of the diode are wired to each other, when a breakdown voltage of a junction of a p-type emitter layer and an n-type buffer layer of the IGBT is represented as BVec, and a forward voltage occurring while the diode transits from a state of blocking to a state of forward conduction is represented as VF, a relationship of VF
摘要翻译：在具有一对IGBT和二极管的半导体器件中，IGBT和二极管彼此并联连接，其中IGBT的集电极和二极管的阴极电极彼此连接，发射极当IGBT的p型发射极层和n型缓冲层的结的击穿电压表示为BVec时，二极管的IGBT和阳极电极彼此连接，并且发生正向电压当二极管从阻塞状态转移到正向传导状态时，VF表示为在二极管中流动的电流的预定电流值Id中的VF

7. 发明授权

US08653588B2 Semiconductor device and electric power conversion system using the same 失效
标题翻译：半导体装置和电力转换系统采用相同的方式
公开(公告)号：US08653588B2
公开(公告)日：2014-02-18
申请号：US13553431
申请日：2012-07-19
申请人： So Watanabe , Masaki Shiraishi , Hiroshi Suzuki , Mutsuhiro Mori
发明人： So Watanabe , Masaki Shiraishi , Hiroshi Suzuki , Mutsuhiro Mori
IPC分类号： H01L29/66
CPC分类号： H01L29/7397 , H01L29/0696 , H01L29/407 , H01L29/66348
摘要： A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type on the first semiconductor layer; trenches in the first semiconductor layer; a semiconductor protruding part on the first semiconductor layer; a third semiconductor layer on the semiconductor protruding part; a fourth semiconductor layer on the third semiconductor layer; a gate insulating layer disposed along the trench; a first interlayer insulating layer disposed along the trench; a first conductive layer facing to the fourth semiconductor layer; a second conductive layer on the first interlayer insulating layer; a second interlayer insulating layer covering the second conductive layer; a third conductive layer on the third semiconductor layer and fourth semiconductor layer; a contacting part connecting the third conductive layer and third semiconductor layer; and a fourth conductive layer formed on the second semiconductor layer.
摘要翻译：半导体器件包括：第一导电类型的第一半导体层; 在第一半导体层上的第二导电类型的第二半导体层; 第一半导体层中的沟槽; 在所述第一半导体层上的半导体突出部; 半导体突出部分上的第三半导体层; 第三半导体层上的第四半导体层; 栅极绝缘层，沿着沟槽设置; 沿沟槽设置的第一层间绝缘层; 面向第四半导体层的第一导电层; 在第一层间绝缘层上的第二导电层; 覆盖所述第二导电层的第二层间绝缘层; 在第三半导体层和第四半导体层上的第三导电层; 连接第三导电层和第三半导体层的接触部分; 以及形成在所述第二半导体层上的第四导电层。

8. 发明授权

US08411454B2 Power converter 有权
标题翻译：电源转换器
公开(公告)号：US08411454B2
公开(公告)日：2013-04-02
申请号：US13239615
申请日：2011-09-22
申请人： Katsunori Azuma , Masamitsu Inaba , Mutsuhiro Mori , Kenichiro Nakajima
发明人： Katsunori Azuma , Masamitsu Inaba , Mutsuhiro Mori , Kenichiro Nakajima
IPC分类号： H05K7/02 , H05K7/06 , H05K7/08 , H05K7/10
CPC分类号： H01G4/38 , B60K1/02 , B60K6/28 , B60K6/48 , B60L3/003 , B60L11/005 , B60L11/123 , B60L11/14 , B60L15/007 , B60L2200/26 , B60L2240/525 , B60L2270/145 , B60W10/06 , B60W10/08 , B60W20/00 , H01G2/04 , H01G4/228 , H01G9/008 , H01G9/08 , H01G9/14 , H01G9/26 , H01L2224/48091 , H01L2224/49111 , H01L2924/00011 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H02M7/003 , Y02T10/6217 , Y02T10/6221 , Y02T10/6286 , Y02T10/645 , Y02T10/7022 , Y02T10/7077 , H01L2924/00014 , H01L2924/00 , H01L2924/01033
摘要： A capacitor module in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The capacitor module includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.
摘要翻译：一种电容器模块，其中连接部分的结构具有高抗振动性和低电感性。电容器模块包括多个电容器和由第一宽导体和第二宽导体组成的层叠体，第一宽导体和第二宽导体以分层形式连接，绝缘片置于第一和第二宽导体之间。层叠体包括：第一平坦部，其包括被支撑在其上并电连接的多个电容器;第二平坦部，其在弯曲的同时从第一平坦部连续地延伸;以及连接部，形成在第一平坦部和第二平坦部的端部平坦部分并且电连接到外部。

9. 发明授权

US07875509B2 Manufacturing method of semiconductor apparatus and semiconductor apparatus, power converter using the same 有权
标题翻译：半导体装置和半导体装置的制造方法，使用其的功率转换器
公开(公告)号：US07875509B2
公开(公告)日：2011-01-25
申请号：US12103921
申请日：2008-04-16
申请人： Junichi Sakano , Kenji Hara , Shinji Shirakawa , Taiga Arai , Mutsuhiro Mori
发明人： Junichi Sakano , Kenji Hara , Shinji Shirakawa , Taiga Arai , Mutsuhiro Mori
IPC分类号： H01L21/84
CPC分类号： H01L29/7394 , H01L29/0878 , H01L29/66325 , H01L29/66681 , H01L29/7824
摘要： In a manufacturing method of a SOI type high withstand voltage semiconductor device formed on a support substrate via an insulation film, a small-sized semiconductor device having small dispersion of withstand voltage is manufactured by introducing impurities into the whole surface of a p-type or n-type SOI substrate having an impurity concentration of 2E14 cm−3 or less and serving as an active layer of the semiconductor device with an ion implantation method and thereby forming a drift layer.
摘要翻译：在通过绝缘膜形成在支撑基板上的SOI型高耐受电压半导体器件的制造方法中，通过将杂质引入p型或者p型的整个表面来制造具有小耐受电压的小分散的小型半导体器件 n型SOI衬底，其杂质浓度为2E14cm-3或更小，并且用离子注入方法用作半导体器件的有源层，从而形成漂移层。

10. 发明申请

US20100327654A1 Power Module and Vehicle-Mounted Inverter Using the Same 有权
标题翻译：功率模块和使用其的车载变频器
公开(公告)号：US20100327654A1
公开(公告)日：2010-12-30
申请号：US12826409
申请日：2010-06-29
申请人： Katsunori AZUMA , Mutsuhiro Mori , Michiaki Hiyoshi , Seiichi Hayakawa , Koji Sasaki , Isamu Yoshida
发明人： Katsunori AZUMA , Mutsuhiro Mori , Michiaki Hiyoshi , Seiichi Hayakawa , Koji Sasaki , Isamu Yoshida
IPC分类号： B60L1/00
CPC分类号： B60L11/04 , B60L2200/26 , H01L24/28 , H01L24/29 , H01L24/48 , H01L25/072 , H01L25/16 , H01L2224/48091 , H01L2224/4847 , H01L2924/00014 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/19041 , H01L2924/30107 , H01L2924/3025 , H02M7/003 , H03K17/08148 , H03K2017/0806 , H05K7/1432 , Y02T10/70 , Y02T10/7077 , Y10T307/74 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A power module includes an upper arm circuit unit and a lower arm circuit unit each having a power semiconductor element; an insulating substrate with the units mounted on one surface thereof; a metal base bonded onto the other surface of the substrate opposite to the one surface where the units are mounted; a first connection conductor for supplying a high potential to the upper unit from outside; a second connection conductor for supplying a low potential to the lower unit from outside; an insulating sheet interposed between the conductors; and a resin case disposed on the metal base to support the conductors, the conductors are flat conductors and laminated with the sheet sandwiched therebetween; the sheet extends from one end of the laminated structure to secure the creepage distance between the conductors; and the case is furnished with a recess for containing the laminated structure.
摘要翻译：功率模块包括上臂电路单元和下臂电路单元，每个具有功率半导体元件; 绝缘基板，其单元安装在其一个表面上; 金属底座粘合到与安装单元的一个表面相对的基板的另一个表面上; 用于从外部向上部单元提供高电位的第一连接导体; 用于从外部向下部单元提供低电位的第二连接导体; 插入在导体之间的绝缘片; 以及设置在金属基座上以支撑导体的树脂壳体，导体是扁平导体，并且夹在其间的片材层压; 片材从层压结构的一端延伸，以确保导体之间的爬电距离; 并且壳体设置有用于容纳层压结构的凹部。

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