专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090015573A1 Plasma display apparatus and semiconductor device 审中-公开
标题翻译：等离子体显示装置和半导体装置
公开(公告)号：US20090015573A1
公开(公告)日：2009-01-15
申请号：US12216735
申请日：2008-07-10
申请人： Takuo Nagase , Mutsuhiro Mori , Junichi Sakano
发明人： Takuo Nagase , Mutsuhiro Mori , Junichi Sakano
IPC分类号： G06F3/038 , G09G3/28
CPC分类号： G09G3/2965 , G09G3/294 , G09G2320/043 , H01J11/12 , H01J11/38
摘要： A plasma display apparatus having a plurality of display cells for prolonging the luminous brightness lifetime in the single-sided drive mode has a first sustaining electrode, a second sustaining electrode connected to reference potential and cooperating with the first sustaining electrode to perform sustain discharge through a discharge space of a display cell, and an address electrode, an electrical capacitance set up between the second sustaining electrode and the discharge space is larger than that set up between the first sustaining electrode and the discharge space.
摘要翻译：具有用于延长单面驱动模式下的发光亮度寿命的多个显示单元的等离子体显示装置具有第一维持电极，连接到参考电位的第二维持电极，并与第一维持电极配合，以通过一个显示单元的放电空间和寻址电极，设置在第二维持电极和放电空间之间的电容大于在第一维持电极和放电空间之间设置的电容。

2. 发明申请

US20100149165A1 PLASMA DISPLAY DEVICE AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：等离子体显示器件和半导体器件
公开(公告)号：US20100149165A1
公开(公告)日：2010-06-17
申请号：US12609258
申请日：2009-10-30
申请人： Takuo NAGASE , Mutsuhiro Mori
发明人： Takuo NAGASE , Mutsuhiro Mori
IPC分类号： G09G3/28 , G09G5/00
CPC分类号： G09G3/296 , G09G3/2927 , G09G3/293 , G09G3/2942 , G09G2310/0289 , G09G2330/021 , G09G2330/028
摘要： A plasma display device of the present invention having a plurality of display cells, comprises a X electrode kept at a reference voltage, a Y electrode, an address electrode, the X electrode and the Y electrode between which sustain discharge occurs, and an address driver comprising a first switch element Q2 for outputting a low level voltage, a second switch element Q1 for outputting a high level voltage, whose withstand voltage of the second switch element is lower than the first switch element, and a diode inserted and connected between the address electrode and the second switch element.
摘要翻译：具有多个显示单元的本发明的等离子体显示装置包括保持在参考电压的X电极，Y电极，寻址电极，X电极和发生维持放电的Y电极与地址驱动器包括用于输出低电平电压的第一开关元件Q2，用于输出第二开关元件的耐受电压低于第一开关元件的高电平电压的第二开关元件Q1和插入并连接在地址电极和第二开关元件。

3. 发明授权

US07773050B2 Semiconductor device and plasma display device using the same 有权
标题翻译：半导体器件和使用其的等离子体显示器件
公开(公告)号：US07773050B2
公开(公告)日：2010-08-10
申请号：US11955507
申请日：2007-12-13
申请人： Takuo Nagase , Mutsuhiro Mori
发明人： Takuo Nagase , Mutsuhiro Mori
IPC分类号： G09G3/28
CPC分类号： G09G3/2965
摘要： To provide an AC-PDP capable of achieving low power consumption and low cost, a driving method is adopted in which, during a period of sustaining light emission of the AC-PDP, an electrode of one side of the panel is fixed at a predetermined potential, and positive and negative voltages are alternately applied to an electrode of the other side of the panel. In addition, an IGBT is used as a switch element. Thus, with a half-bridge driving method using an IGBT as a switch element, it is possible to simultaneously achieve a reduction in loss of a driving circuit of the AC-PDP and a reduction in the number of components thereof, such reductions not being able to be achieved by the conventional techniques.
摘要翻译：为了提供能够实现低功耗和低成本的AC-PDP，采用驱动方法，其中在AC-PDP的发光持续时间期间，将面板的一侧的电极固定在预定的电位和正负电压交替施加到面板另一侧的电极。另外，使用IGBT作为开关元件。因此，通过使用IGBT作为开关元件的半桥驱动方法，可以同时实现AC-PDP的驱动电路的损耗的减少和其部件数量的减少，这样的减少不是能够通过常规技术实现。

4. 发明授权

US07602045B2 Semiconductor device and inverter device using the same 有权
标题翻译：半导体装置及其逆变装置使用相同
公开(公告)号：US07602045B2
公开(公告)日：2009-10-13
申请号：US11624723
申请日：2007-01-19
申请人： Takuo Nagase , Mutsuhiro Mori
发明人： Takuo Nagase , Mutsuhiro Mori
IPC分类号： H01L29/74 , H01L29/76
CPC分类号： H01L29/7395 , H01L21/268 , H01L27/0664 , H01L29/861
摘要： In a semiconductor device having a pair of IGBT and diode which are connected to each other in inverse-parallel in which a collector-electrode of the IGBT and a cathode-electrode of the diode are wired to each other, and an emitter-electrode of the IGBT and an anode-electrode of the diode are wired to each other, when a breakdown voltage of a junction of a p-type emitter layer and an n-type buffer layer of the IGBT is represented as BVec, and a forward voltage occurring while the diode transits from a state of blocking to a state of forward conduction is represented as VF, a relationship of VF
摘要翻译：在具有一对IGBT和二极管的半导体器件中，IGBT和二极管彼此并联连接，其中IGBT的集电极和二极管的阴极电极彼此连接，发射极当IGBT的p型发射极层和n型缓冲层的结的击穿电压表示为BVec时，二极管的IGBT和阳极电极彼此连接，并且发生正向电压当二极管从阻塞状态转移到正向传导状态时，VF表示为在二极管中流动的电流的预定电流值Id中的VF

5. 发明申请

US20080143265A1 Semiconductor Device and Plasma Display Device Using the Same 有权
标题翻译：半导体装置及其等离子体显示装置
公开(公告)号：US20080143265A1
公开(公告)日：2008-06-19
申请号：US11955507
申请日：2007-12-13
申请人： Takuo Nagase , Mutsuhiro Mori
发明人： Takuo Nagase , Mutsuhiro Mori
IPC分类号： G09G3/10
CPC分类号： G09G3/2965
摘要： To provide an AC-PDP capable of achieving low power consumption and low cost, a driving method is adopted in which, during a period of sustaining light emission of the AC-PDP, an electrode of one side of the panel is fixed at a predetermined potential, and positive and negative voltages are alternately applied to an electrode of the other side of the panel. In addition, an IGBT is used as a switch element. Thus, with a half-bridge driving method using an IGBT as a switch element, it is possible to simultaneously achieve a reduction in loss of a driving circuit of the AC-PDP and a reduction in the number of components thereof, such reductions not being able to be achieved by the conventional techniques.
摘要翻译：为了提供能够实现低功耗和低成本的AC-PDP，采用驱动方法，其中在AC-PDP的发光持续时间期间，将面板的一侧的电极固定在预定的电位和正负电压交替施加到面板另一侧的电极。另外，使用IGBT作为开关元件。因此，通过使用IGBT作为开关元件的半桥驱动方法，可以同时实现AC-PDP的驱动电路的损耗的减少和其部件数量的减少，这样的减少不是能够通过常规技术实现。

6. 发明申请

US20070194346A1 SEMICONDUCTOR DEVICE AND INVERTER DEVICE USING THE SAME 有权
标题翻译：使用其的半导体器件和反相器器件
公开(公告)号：US20070194346A1
公开(公告)日：2007-08-23
申请号：US11624723
申请日：2007-01-19
申请人： Takuo Nagase , Mutsuhiro Mori
发明人： Takuo Nagase , Mutsuhiro Mori
IPC分类号： H01L29/74
CPC分类号： H01L29/7395 , H01L21/268 , H01L27/0664 , H01L29/861
摘要： In a semiconductor device having a pair of IGBT and diode which are connected to each other in inverse-parallel in which a collector-electrode of the IGBT and a cathode-electrode of the diode are wired to each other, and an emitter-electrode of the IGBT and an anode-electrode of the diode are wired to each other, when a breakdown voltage of a junction of a p-type emitter layer and an n-type buffer layer of the IGBT is represented as BVec, and a forward voltage occurring while the diode transits from a state of blocking to a state of forward conduction is represented as VF, a relationship of VF
摘要翻译：在具有一对IGBT和二极管的半导体器件中，IGBT和二极管彼此并联连接，其中IGBT的集电极和二极管的阴极电极彼此连接，发射极当IGBT的p型发射极层和n型缓冲层的结的击穿电压表示为BVec时，二极管的IGBT和阳极电极彼此连接，并且发生正向电压当二极管从阻塞状态转移到正向传导状态时，VF表示为在二极管中流动的电流的预定电流值Id中的VF

7. 发明授权

US07875509B2 Manufacturing method of semiconductor apparatus and semiconductor apparatus, power converter using the same 有权
标题翻译：半导体装置和半导体装置的制造方法，使用其的功率转换器
公开(公告)号：US07875509B2
公开(公告)日：2011-01-25
申请号：US12103921
申请日：2008-04-16
申请人： Junichi Sakano , Kenji Hara , Shinji Shirakawa , Taiga Arai , Mutsuhiro Mori
发明人： Junichi Sakano , Kenji Hara , Shinji Shirakawa , Taiga Arai , Mutsuhiro Mori
IPC分类号： H01L21/84
CPC分类号： H01L29/7394 , H01L29/0878 , H01L29/66325 , H01L29/66681 , H01L29/7824
摘要： In a manufacturing method of a SOI type high withstand voltage semiconductor device formed on a support substrate via an insulation film, a small-sized semiconductor device having small dispersion of withstand voltage is manufactured by introducing impurities into the whole surface of a p-type or n-type SOI substrate having an impurity concentration of 2E14 cm−3 or less and serving as an active layer of the semiconductor device with an ion implantation method and thereby forming a drift layer.
摘要翻译：在通过绝缘膜形成在支撑基板上的SOI型高耐受电压半导体器件的制造方法中，通过将杂质引入p型或者p型的整个表面来制造具有小耐受电压的小分散的小型半导体器件 n型SOI衬底，其杂质浓度为2E14cm-3或更小，并且用离子注入方法用作半导体器件的有源层，从而形成漂移层。

8. 发明申请

US20050244713A1 Engine driving system 审中-公开
标题翻译：发动机驱动系统
公开(公告)号：US20050244713A1
公开(公告)日：2005-11-03
申请号：US11115261
申请日：2005-04-27
申请人： Kyoko Honbo , Masanori Sakai , Mutsuhiro Mori , Shinji Shirakawa , Junichi Sakano , Yasuo Kondo , Tokiyoshi Hirasawa , Masayuki Terada , Takayuki Kimura
发明人： Kyoko Honbo , Masanori Sakai , Mutsuhiro Mori , Shinji Shirakawa , Junichi Sakano , Yasuo Kondo , Tokiyoshi Hirasawa , Masayuki Terada , Takayuki Kimura
IPC分类号： F02N15/00 , F02N11/00 , F02N11/08 , F02N11/14 , H01M2/18 , H01M4/20 , H01M4/56 , H01M4/68 , H01M10/06 , H01M10/12 , H01M10/14
CPC分类号： F02N11/0862 , F02N11/0825 , F02N11/14 , H01M4/20 , H01M4/685 , H01M10/125 , H01M10/14 , Y02E60/126
摘要： Disclosed is an engine driving system having a cell suitable for restarting an engine, wherein an engine is stopped at the time of stopping running of a vehicle and the engine is restarted at the time of starting running of the vehicle, there are provided an engine electronic control device for controlling the engine, a motor for restarting the engine and a cell for supplying an electrical power to the motor; the cell comprises an anode plate formed into a thin band-shape, a cathode plate formed into a thin band-shape and a band-like separator arranged between the anode plate and the cathode plate; and the anode plate, the cathode plate and the separator form a group of wound pole plates and the group of pole plates is immersed in electrolysis solution.
摘要翻译：公开了一种发动机驱动系统，其具有适于重新启动发动机的发电机，其中在停止车辆行驶时发动机停止，并且在车辆开始行驶时重新启动发动机，提供发动机电子用于控制发动机的控制装置，用于重新启动发动机的电动机和用于向电动机供电的电池单元; 电池包括形成为薄带状的阳极板，形成为薄带状的阴极板和布置在阳极板和阴极板之间的带状隔板; 阳极板，阴极板和隔板形成一组绕组极板，并将极板组浸入电解液中。

9. 发明授权

US06414370B1 Semiconductor circuit preventing electromagnetic noise 失效
标题翻译：半导体电路防止电磁噪声
公开(公告)号：US06414370B1
公开(公告)日：2002-07-02
申请号：US09639801
申请日：2000-08-17
申请人： Masahiro Nagasu , Hideo Kobayashi , Hideki Miyazaki , Shin Kimura , Junichi Sakano , Mutsuhiro Mori
发明人： Masahiro Nagasu , Hideo Kobayashi , Hideki Miyazaki , Shin Kimura , Junichi Sakano , Mutsuhiro Mori
IPC分类号： H01L27082
CPC分类号： H01L29/866 , H01L29/0692 , H01L29/0834 , H01L29/7393 , H01L29/7395 , H03K17/08148 , H03K17/0828
摘要： A semiconductor circuit or a semiconductor device has the current-voltage characteristic that, in a blocking-state of the semiconductor circuit or the semiconductor device, a current gently flows for values of a voltage equal to or greater than a first voltage value but equal to or smaller than a second voltage value, whereas a current abruptly flows for values of a voltage greater than the second voltage value. Due to the current-voltage characteristic, energy accumulated in an inductance provided within the circuit is consumed by a differential resistance of the semiconductor circuit or a semiconductor, thereby preventing the occurrence of the electromagnetic noise and an excessively large voltage.
摘要翻译：半导体电路或半导体器件具有电流 - 电压特性，在半导体电路或半导体器件的阻挡状态下，电流缓慢地流过等于或大于第一电压值但等于或等于或小于第二电压值，而电流突然流过大于第二电压值的电压值。由于电流 - 电压特性，在电路内提供的电感中积累的能量被半导体电路或半导体的差分电阻消耗，从而防止电磁噪声的发生和过大的电压。

10. 发明授权

US5859446A Diode and power converting apparatus 失效
标题翻译：二极管和电力转换装置
公开(公告)号：US5859446A
公开(公告)日：1999-01-12
申请号：US802882
申请日：1997-02-19
申请人： Masahiro Nagasu , Mutsuhiro Mori , Hideo Kobayashi , Junichi Sakano
发明人： Masahiro Nagasu , Mutsuhiro Mori , Hideo Kobayashi , Junichi Sakano
IPC分类号： H01L29/06 , H01L29/417 , H01L29/861 , H02M7/48
CPC分类号： H01L29/417 , H01L29/8611
摘要： In a diode, the backward length L of an anode electrode in a region, where a semiconductor layer of a p.sup.+ conductivity type and an anode electrode do not contact each other, is made longer than the diffusion length of holes in a semiconductor layer of an n.sup.- conductivity type for obtaining a large critical di/dt.
摘要翻译：在二极管中，在p +导电型半导体层和阳极电极的区域中的阳极电极的后向长度L不比在半导体层中的空穴的扩散长度长 n-导电型用于获得大的临界di / dt。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式