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1. 发明授权

US10079053B2 Memory element and memory device 有权
公开(公告)号：US10079053B2
公开(公告)日：2018-09-18
申请号：US13444177
申请日：2012-04-11
申请人： Takuro Ohmaru , Yukio Maehashi
发明人： Takuro Ohmaru , Yukio Maehashi
IPC分类号： G11C14/00 , G11C11/412
CPC分类号： G11C11/412 , G11C14/0054
摘要： An object is to provide a memory element having a novel structure where data can be held even after power supply is stopped. The memory element includes a latch circuit, a first selection circuit, a second selection circuit, a first nonvolatile memory circuit, and a second nonvolatile memory circuit. The first nonvolatile memory circuit and the second nonvolatile memory circuit each include a transistor and a capacitor. The transistor included in each of the first nonvolatile memory circuit and the second nonvolatile memory circuit is a transistor in which a channel is formed in an oxide semiconductor film. The off-state current of such a transistor is extremely small. The transistor is turned off after data is input to a node where the transistor and the capacitor are connected to each other, and data can be held for a long time even after supply of power supply voltage is stopped.

2. 发明授权

US09537043B2 Photoelectric conversion device and manufacturing method thereof 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US09537043B2
公开(公告)日：2017-01-03
申请号：US13087714
申请日：2011-04-15
申请人： Shunpei Yamazaki , Hajime Kimura , Yoshiaki Ito , Takuro Ohmaru
发明人： Shunpei Yamazaki , Hajime Kimura , Yoshiaki Ito , Takuro Ohmaru
IPC分类号： H01L31/0203 , H01L31/20 , C23C14/08 , C23C14/34 , H01L31/0296 , H01L31/0304 , H01L31/0312 , H01L31/0368 , H01L31/0376 , H01L31/0392 , H01L31/075 , H01L31/18 , H02S40/32 , H01L21/02
CPC分类号： H01L31/202 , C23C14/08 , C23C14/34 , H01L21/02422 , H01L21/02538 , H01L21/02554 , H01L21/02565 , H01L21/0262 , H01L21/02672 , H01L31/0296 , H01L31/0304 , H01L31/0312 , H01L31/03685 , H01L31/03762 , H01L31/0392 , H01L31/075 , H01L31/1816 , H02S40/32 , Y02E10/544 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： It is an object to reduce the region of a photoelectric conversion element which light does not reach, to suppress deterioration of power generation efficiency, and to suppress manufacturing cost of a voltage conversion element. The present invention relates to a transmissive photoelectric conversion device which includes a photoelectric conversion element including an n-type semiconductor layer, an intrinsic semiconductor layer, and a p-type semiconductor layer; a voltage conversion element which is overlapped with the photoelectric conversion element and which includes an oxide semiconductor film for a channel formation region; and a conductive element which electrically connects the photoelectric conversion element and the voltage conversion element. The photoelectric conversion element is a solar cell. The voltage conversion element includes a transistor having a channel formation region including an oxide semiconductor film. The voltage conversion element is a DC-DC converter.
摘要翻译：本发明的目的是减少不能到达的光电转换元件的区域，以抑制发电效率的劣化，并且抑制电压转换元件的制造成本。本发明涉及一种透射光电转换装置，其包括：包括n型半导体层，本征半导体层和p型半导体层的光电转换元件; 电压转换元件，其与光电转换元件重叠并且包括用于沟道形成区域的氧化物半导体膜; 以及电连接光电转换元件和电压转换元件的导电元件。光电转换元件是太阳能电池。电压转换元件包括具有包括氧化物半导体膜的沟道形成区的晶体管。电压转换元件是DC-DC转换器。

3. 发明授权

US08692243B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08692243B2
公开(公告)日：2014-04-08
申请号：US13083642
申请日：2011-04-11
申请人： Koichiro Kamata , Yoshiaki Ito , Takuro Ohmaru
发明人： Koichiro Kamata , Yoshiaki Ito , Takuro Ohmaru
IPC分类号： H01L29/12 , H01L21/8234
CPC分类号： H01L27/1225 , H01L21/76254 , H01L27/1251 , H01L27/127 , H01L29/66772
摘要： An object is to reduce the number of manufacturing steps of a semiconductor device, to improve yield of a semiconductor device, or to reduce manufacturing cost of a semiconductor device. One embodiment of the present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes, over a substrate, a first transistor having a single crystal semiconductor layer in a channel formation region, a second transistor that is isolated from the first transistor with an insulating layer positioned therebetween and has an oxide semiconductor layer in a channel formation region, and a diode having a single crystal semiconductor layer and a oxide semiconductor layer.
摘要翻译：目的是减少半导体器件的制造步骤的数量，以提高半导体器件的产量，或者降低半导体器件的制造成本。本发明的一个实施例涉及半导体器件和制造半导体器件的方法。半导体器件在衬底上包括在沟道形成区域中具有单晶半导体层的第一晶体管，与第一晶体管隔离的第二晶体管，绝缘层位于其间并具有沟道形成中的氧化物半导体层区域，以及具有单晶半导体层和氧化物半导体层的二极管。

4. 发明申请

US20080001228A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080001228A1
公开(公告)日：2008-01-03
申请号：US11812534
申请日：2007-06-19
申请人： Yutaka Shionoiri , Takuro Ohmaru
发明人： Yutaka Shionoiri , Takuro Ohmaru
IPC分类号： H01L27/12 , H01L21/84
CPC分类号： H01L27/11293 , H01L21/76816 , H01L27/105 , H01L27/112 , H01L27/11226 , H01L27/124 , H01L27/1255 , H01L29/41733
摘要： An individual identifier is easily provided in a semiconductor device capable of wireless communication. The semiconductor device includes a thin film transistor including a channel forming region, an island-like semiconductor film including a source region and a drain region, a gate insulating film, and a gate electrode; an interlayer insulating film; a plurality of contact holes formed in the interlayer insulating film which reach one of the source region and the drain region; and a single contact hole which reaches the other of the source region and the drain region, wherein a diameter of the single contact hole is larger than a diameter of each of the plurality of contact holes, and a sum of areas of bases of the plurality of contact holes is equal to an area of a base of the single contact hole.
摘要翻译：在能够进行无线通信的半导体装置中容易提供个体识别符。半导体器件包括：包括沟道形成区域的薄膜晶体管，包括源极区域和漏极区域的岛状半导体膜，栅极绝缘膜和栅电极; 层间绝缘膜; 形成在所述层间绝缘膜中的多个接触孔，其到达所述源极区域和所述漏极区域中的一个; 以及单个接触孔，其到达源区域和漏极区域中的另一个，其中单个接触孔的直径大于多个接触孔中的每一个的直径，并且多个接触孔的基底的面积之和接触孔的面积等于单个接触孔的基部的面积。

5. 发明授权

US09667148B2 Photoelectric transducer device including a transistor including an oxide semiconductor layer 有权
公开(公告)号：US09667148B2
公开(公告)日：2017-05-30
申请号：US13150652
申请日：2011-06-01
申请人： Hajime Kimura , Yoshiaki Ito , Takuro Ohmaru , Shunpei Yamazaki
发明人： Hajime Kimura , Yoshiaki Ito , Takuro Ohmaru , Shunpei Yamazaki
IPC分类号： G05F1/10 , H02M3/158 , H01L27/12 , H01L31/048 , H02S40/32
CPC分类号： H02M3/1588 , H01L27/1225 , H01L27/1233 , H01L31/048 , H02S40/32 , Y02B70/1466 , Y02E10/50
摘要： An object is to obtain a rectifier having a small voltage drop and to reduce the fabrication cost of a converter circuit. A photoelectric transducer device including: a photoelectric transducer element; and a converter circuit stepping up or stepping down an output of the photoelectric transducer element and including a switching element and a rectifier, in which the switching element is a first oxide semiconductor transistor that is normally off and in which the rectifier is a second oxide semiconductor transistor that is diode-connected and normally on.

6. 发明授权

US09209687B2 DC-DC converter, power source circuit, and semiconductor device 有权
公开(公告)号：US09209687B2
公开(公告)日：2015-12-08
申请号：US13477588
申请日：2012-05-22
申请人： Takuro Ohmaru
发明人： Takuro Ohmaru
IPC分类号： G05F1/575 , H02M3/157
摘要： A DC-DC converter includes a control circuit, a switching element, and a constant-voltage generation portion which generates an output voltage on the basis of an input voltage supplied through the switching element. The control circuit includes AD converters which convert the input voltage and the output voltage, a signal processing circuit, a pulse modulation circuit, and a power supply control circuit which controls supply of a power supply voltage to the signal processing circuit in accordance with digital values of the input voltage and the output voltage. The signal processing circuit determines the duty ratio in accordance with the digital value of the output voltage, and the pulse modulation circuit controls the switching element. The signal processing circuit includes a memory device including a memory element, a capacitor for storing data of the memory element, and a transistor for controlling charge in the capacitor. The transistor includes an oxide semiconductor.

7. 发明授权

US09099576B2 Photoelectric conversion device and manufacturing method thereof 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US09099576B2
公开(公告)日：2015-08-04
申请号：US13100553
申请日：2011-05-04
申请人： Hajime Kimura , Yoshiaki Ito , Takuro Ohmaru , Shunpei Yamazaki
发明人： Hajime Kimura , Yoshiaki Ito , Takuro Ohmaru , Shunpei Yamazaki
IPC分类号： H02J1/00 , H01L31/02 , H01L31/0216 , H01L31/068 , H01L31/076 , H02M3/158
CPC分类号： H01L31/0201 , H01L31/02167 , H01L31/068 , H01L31/076 , H02M3/1584 , Y02E10/542 , Y02E10/547 , Y02E10/548 , Y10T307/658
摘要： Generation of ripples and the decrease in the output voltage of a photoelectric conversion device are suppressed. The photoelectric conversion device includes a first photoelectric conversion element; a first voltage conversion element for converting the output voltage of the first photoelectric conversion element; a second photoelectric conversion element whose characteristic is different from the characteristic of the first photoelectric conversion element; a second voltage conversion element for converting the output voltage of the second photoelectric conversion element; and a control element for controlling timing of the first voltage conversion element and the second voltage conversion element.
摘要翻译：波纹的产生和光电转换装置的输出电压的降低被抑制。光电转换装置包括第一光电转换元件; 用于转换第一光电转换元件的输出电压的第一电压转换元件; 第二光电转换元件，其特性与第一光电转换元件的特性不同; 用于转换第二光电转换元件的输出电压的第二电压转换元件; 以及用于控制第一电压转换元件和第二电压转换元件的定时的控制元件。

8. 发明授权

US08787084B2 Semiconductor device and driving method thereof 有权
标题翻译：半导体装置及其驱动方法
公开(公告)号：US08787084B2
公开(公告)日：2014-07-22
申请号：US13429668
申请日：2012-03-26
申请人： Takuro Ohmaru
发明人： Takuro Ohmaru
IPC分类号： G11C14/00 , H01L21/84 , H01L27/105 , H01L27/108 , H01L27/12 , G11C11/404 , H01L27/06 , H01L27/115
CPC分类号： G11C14/0018 , G11C11/24 , G11C11/404 , G11C16/0416 , H01L21/84 , H01L27/0688 , H01L27/1052 , H01L27/10873 , H01L27/10894 , H01L27/10897 , H01L27/115 , H01L27/1156 , H01L27/1203 , H01L29/7869
摘要： The storage device includes a volatile first memory circuit and a nonvolatile second memory circuit which includes a transistor whose channel is formed in an oxide semiconductor layer. In the case of high-frequency driving, during a period when source voltage is applied, a data signal is input to and output from the first memory circuit, and during a part of a period when source voltage is supplied, which is before the supply of the source voltage is stopped, a data signal is input to the second memory circuit. In the case of low-frequency driving, during a period when source voltage is applied, a data signal is input to the second memory circuit, the data signal input to the second memory circuit is input to the first memory circuit, and the data signal input to the first memory circuit is output.
摘要翻译：存储装置包括易失性第一存储器电路和非易失性第二存储器电路，其包括其通道形成在氧化物半导体层中的晶体管。在高频驱动的情况下，在施加电源电压的期间，数据信号被输入到第一存储电路并从第一存储电路输出，并且在供给源电压的期间的一部分期间的源电压停止，数据信号被输入到第二存储电路。在低频驱动的情况下，在施加电源电压的期间，将数据信号输入到第二存储电路，输入到第二存储电路的数据信号输入到第一存储电路，数据信号输出到第一存储器电路的输入。

9. 发明申请

US20110309239A1 Photoelectric Transducer Device 有权
标题翻译：光电传感器
公开(公告)号：US20110309239A1
公开(公告)日：2011-12-22
申请号：US13114351
申请日：2011-05-24
申请人： Hajime Kimura , Satoshi Shinohara , Yoshiaki Ito , Takuro Ohmaru , Shunpei Yamazaki
发明人： Hajime Kimura , Satoshi Shinohara , Yoshiaki Ito , Takuro Ohmaru , Shunpei Yamazaki
IPC分类号： H01L31/02
CPC分类号： H01L31/075 , B60L8/003 , H01L25/16 , H01L2924/0002 , H01L2924/09701 , H02M3/155 , H02S40/32 , Y02E10/548 , Y02T10/7083 , H01L2924/00
摘要： An object is to obtain a diode having a small voltage drop and to reduce the fabrication cost of a converter circuit. A photoelectric transducer device including: a photoelectric transducer element; and a converter circuit stepping up or stepping down an output of the photoelectric transducer element and including a switching element and a rectifier, in which the switching element is a first insulated gate bipolar transistor that is normally off and in which the rectifier is a second insulated gate bipolar transistor that is diode-connected and normally on.
摘要翻译：目的是获得具有小电压降的二极管并降低转换器电路的制造成本。一种光电传感器装置，包括：光电传感器元件; 以及转换器电路，升压或降压光电换能器元件的输出并且包括开关元件和整流器，其中开关元件是常闭的第一绝缘栅双极晶体管，其中整流器是第二绝缘的二极管连接并通常导通的双极晶体管。

10. 发明授权

US09178419B2 Power source circuit including transistor with oxide semiconductor 有权
标题翻译：电源电路包括具有氧化物半导体的晶体管
公开(公告)号：US09178419B2
公开(公告)日：2015-11-03
申请号：US13082459
申请日：2011-04-08
申请人： Yoshiaki Ito , Takuro Ohmaru
发明人： Yoshiaki Ito , Takuro Ohmaru
IPC分类号： G05F1/00 , H02M3/157 , G09G3/10
CPC分类号： H02M3/157 , G05F1/00 , G09G3/10
摘要： An object is to reduce degradation of circuit operation and to reduce the area of the entire circuit. A power source circuit is provided with a first terminal to which first voltage is input; a second terminal to which second voltage is input; a comparator being connected to the first terminal and the second terminal and comparing the first voltage and the second voltage; a digital circuit averaging, integrating, and digital pulse width modulating a first digital signal output from the comparator; a PWM output driver amplifying a second digital signal output from the digital circuit; and a smoothing circuit smoothing the amplified second digital signal.
摘要翻译：目的是减少电路运行的恶化并减少整个电路的面积。电源电路设置有输入第一电压的第一端子; 输入第二电压的第二端子; 比较器连接到第一端子和第二端子，并且比较第一电压和第二电压; 数字电路对从比较器输出的第一数字信号进行平均，积分和数字脉宽调制; PWM输出驱动器，放大从数字电路输出的第二数字信号; 以及使放大的第二数字信号平滑的平滑电路。

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