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1. 发明授权

US07367769B2 Semiconductor production system, cluster tool, control method of semiconductor production system and maintenance method of cluster tool 有权
标题翻译：半导体生产系统，集群工具，半导体生产系统的控制方法和集群工具的维护方法
公开(公告)号：US07367769B2
公开(公告)日：2008-05-06
申请号：US10471289
申请日：2002-03-18
申请人： Tomoyuki Ishii , Masahiro Numakura
发明人： Tomoyuki Ishii , Masahiro Numakura
IPC分类号： H01L21/677 , G06F7/00
CPC分类号： H01L21/67276 , G05B2219/45032 , Y10S414/139
摘要： PS control sections MC1, MC2 configured to independently control the operations in process ships PS1, PS2 are provided respectively, and an LM control section MC3 configured to control the operation in a loader module LM is provided independently.With this structure, the operations of the process ships PS1, PS2 and the loader module LM can be checked while the process ships PS1, PS2 are not coupled to the loader module LM.
摘要翻译：分别提供被配置为独立地控制处理船舶PS 1，PS 2中的操作的PS控制部分MC 1，MC 2，并且独立地提供被配置为控制加载器模块LM中的操作的LM控制部分MC 3。利用这种结构，可以在处理装置PS 1，PS 2未联接到装载机模块LM的同时检查处理船PS 1，PS 2和装载机模块LM的操作。

2. 发明申请

US20110252336A1 INFORMATION MANAGEMENT SUPPORT METHOD, MANAGEMENT INFORMATION VISUALIZATION DEVICE, INFORMATION MANAGEMENT SYSTEM, AND MANAGEMENT INFORMATION VISUALIZATION METHOD 审中-公开
标题翻译：信息管理支持方法，管理信息可视化设备，信息管理系统和管理信息可视化方法
公开(公告)号：US20110252336A1
公开(公告)日：2011-10-13
申请号：US13125704
申请日：2008-10-22
申请人： Tomoyuki Ishii , Keiichi Sato
发明人： Tomoyuki Ishii , Keiichi Sato
IPC分类号： G06F3/01
CPC分类号： G16H40/20 , G16H10/60
摘要： A management information visualization device (management provider server 30) according to the present invention includes: an information registration management unit (information management unit 304) that registers service information transmitted from a service providing device (service provider server 20), associating the service information with user identification information and service content identification information which are related to the service information; and an information input/output unit (user GUI providing unit 303) that receives, from a user device, a request for viewing service information, creates management information (a top screen) including a service content list associated with service content identification information and transmits the management information to the user device, and, when one of the service content list displayed on the user device being selected by operation, searches in a management information DB300 and transmits corresponding service information to the user device.
摘要翻译：根据本发明的管理信息可视化设备（管理提供商服务器30）包括：信息注册管理单元（信息管理单元304），其注册从服务提供设备（服务提供商服务器20）发送的服务信息，将服务信息具有与服务信息相关的用户识别信息和服务内容识别信息; 以及信息输入/输出单元（用户GUI提供单元303），其从用户设备接收对查看服务信息的请求，创建包括与服务内容识别信息相关联的服务内容列表的管理信息（顶层屏幕）并发送管理信息到用户装置，当通过操作选择显示在用户装置上的服务内容列表中的一个在管理信息DB300中进行搜索并将相应的服务信息发送到用户装置时。

3. 发明申请

US20110169070A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110169070A1
公开(公告)日：2011-07-14
申请号：US13072211
申请日：2011-03-25
申请人： Taro Osabe , Tomoyuki Ishii , Kazuo Yano , Takashi Kobayashi
发明人： Taro Osabe , Tomoyuki Ishii , Kazuo Yano , Takashi Kobayashi
IPC分类号： H01L27/088
CPC分类号： H01L27/11521 , B82Y10/00 , G11C16/0433 , G11C16/0458 , G11C16/0483 , G11C16/0491 , G11C16/10 , G11C16/26 , G11C2216/06 , H01L27/115 , H01L29/42332 , H01L29/42348 , H01L29/7887
摘要： For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor memory device, upon which high-speeded read-out operation is required, a charge storage region is constructed with particles made from a large number of semiconductor charge storage small regions, each being independent, thereby increasing the reliability by the cell level.
摘要翻译：为了通过电池级提供具有提高可靠性的便宜的半导体存储器件，以代替通过诸如ECC的电存储器单元中的缺陷脱离，并且还用于提供能够在垂直方向上按比例缩小的单元结构，同时保持在需要高速读出操作的半导体存储器件中的可靠性，电荷存储区域由大量半导体电荷存储小区域制成的粒子构成，各自独立，从而通过细胞水平。

4. 发明授权

US07622766B2 Semiconductor memory device and method for producing the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07622766B2
公开(公告)日：2009-11-24
申请号：US11808228
申请日：2007-06-07
申请人： Tomoyuki Ishii , Taro Osabe , Hideaki Kurata , Takeshi Sakata
发明人： Tomoyuki Ishii , Taro Osabe , Hideaki Kurata , Takeshi Sakata
IPC分类号： H01L29/788
CPC分类号： H01L27/11568 , B82Y10/00 , G11C11/5621 , G11C11/5671 , G11C16/0433 , G11C16/0458 , G11C16/0475 , G11C16/0491 , G11C2216/06 , H01L27/115 , H01L27/11521
摘要： Disclosed is a non-volatile semiconductor memory device that uses a inversion layer provided on a semiconductor substrate as a data line. The memory device can reduce variation of characteristics among memory cells and can reduce bit cost. A plurality of assist gates are formed in the upper part of a p-type well through a gate oxide film. In the upper part of an interlayer insulator that covers those assist gates are formed word lines that are used as control electrodes. The width of those word lines is, for example, 0.1 μm, and each word line is separated from its adjacent word lines by a side wall spacer that is a silicon oxide film having a thickness of about 20 nm.
摘要翻译：公开了使用设置在半导体衬底上的反转层作为数据线的非易失性半导体存储器件。存储器件可以减少存储器单元之间的特性变化并且可以降低位成本。多个辅助栅极通过栅极氧化膜形成在p型阱的上部。在覆盖这些辅助栅极的层间绝缘体的上部形成用作控制电极的字线。这些字线的宽度例如为0.1μm，并且每个字线通过作为厚度为约20nm的氧化硅膜的侧壁间隔物与其相邻字线分开。

5. 发明申请

US20090237685A1 Color image printer and gradation correcting method therefor 审中-公开
标题翻译：彩色图像打印机及其灰度校正方法
公开(公告)号：US20090237685A1
公开(公告)日：2009-09-24
申请号：US12381313
申请日：2009-03-10
申请人： Takeshi Nishihara , Yozo Ohki , Tatsuji Goma , Tomoyuki Ishii , Takuya Yamamoto
发明人： Takeshi Nishihara , Yozo Ohki , Tatsuji Goma , Tomoyuki Ishii , Takuya Yamamoto
IPC分类号： H04N1/60 , B41J2/435
CPC分类号： G03G15/5062 , G03G2215/00063 , G03G2215/00067 , G03G2215/0164
摘要： A method of gradation correction for laser scanning exposure is effected, based on measured density values of a test print (TP) including a horizontal stripe test pattern comprised of a plurality of horizontal lines extending in the main scanning direction and a vertical stripe pattern comprised of a plurality of vertical lines extending in the sub scanning direction. The includes the steps of calculating, based on the measured density values, a rising correction amount for main scanning rising correction of adding a rising correction component to one dot after rising of a modulated laser in order to reduce density difference between the horizontal line and the vertical line and calculating, based on the measured density values, a falling correction amount for main scanning falling correction of adding a falling correction component to one dot after rising of the modulated laser in order to reduce the density difference between the horizontal line and the vertical line.
摘要翻译：基于包括由在主扫描方向上延伸的多条水平线组成的水平条纹测试图案的测试印刷（TP）的测量密度值和由主扫描方向延伸的垂直条纹图案，实现激光扫描曝光的灰度校正方法沿副扫描方向延伸的多条垂直线。包括以下步骤：基于所测量的浓度值，计算用于在调制激光器升高之后将上升校正分量加到一个点上的主扫描上升校正的上升校正量，以便减小水平线和垂直线，并且基于测量的浓度值，计算用于在调制激光器升高之后将下降校正分量加到下降校正分量的主扫描下降校正的下降校正量，以便降低水平线和垂直线之间的密度差线。

6. 发明授权

US07468901B2 Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US07468901B2
公开(公告)日：2008-12-23
申请号：US11399397
申请日：2006-04-07
申请人： Norifumi Kameshiro , Riichiro Takemura , Tomoyuki Ishii
发明人： Norifumi Kameshiro , Riichiro Takemura , Tomoyuki Ishii
IPC分类号： G11C7/00
CPC分类号： G11C11/405 , G11C7/18 , G11C11/4097 , G11C2211/4013 , H01L27/0207 , H01L27/108
摘要： In a two-transistor gain cell structure, a semiconductor memory device capable of stable reading without malfunction and having small-area memory cells is provided. In a two-transistor gain cell memory having a write transistor and a read transistor, a write word line, a read word line, a write bit line, and a read bit line are separately provided, and voltages to be applied are independently set. Furthermore, a memory cell is connected to the same read word line and write bit line as those of an adjacent memory cell.
摘要翻译：在双晶体管增益单元结构中，提供了能够稳定读取而没有故障并且具有小面积存储单元的半导体存储器件。在具有写晶体管和读晶体管的双晶体管增益单元存储器中，分别提供写字线，读字线，写位线和读位线，并且独立地设置要施加的电压。此外，存储单元连接到与相邻存储单元相同的读字线和写位线。

7. 发明授权

US07375399B2 Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US07375399B2
公开(公告)日：2008-05-20
申请号：US11156558
申请日：2005-06-21
申请人： Tomoyuki Ishii , Toshiyuki Mine , Toshiaki Sano , Norifumi Kameshiro
发明人： Tomoyuki Ishii , Toshiyuki Mine , Toshiaki Sano , Norifumi Kameshiro
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L27/105 , G11C11/405 , G11C2207/104 , H01L21/823456 , H01L21/823462 , H01L27/1052 , H01L27/11 , H01L27/1116
摘要： The present invention is a semiconductor memory device having a logic block and a memory block on the same chip. In the memory device, unit memory cells each include at least two transistors, one of which is a write transistor for storing an electric charge into and releasing it from an electric charge storage node, and the other is a read transistor whose conductance in a channel region provided between a source and drain of the read transistor is modulated dependently on the amount of electric charge stored into or released from the electric charge storage node by the write transistor. The read transistor has a gate-insulating film thicker than that of a transistor provided in the logic block, and uses the same diffusion layer structure as that of the logic block.
摘要翻译：本发明是具有在同一芯片上的逻辑块和存储器块的半导体存储器件。在存储器件中，单元存储单元每个都包括至少两个晶体管，其中之一是用于存储电荷并将其从电荷存储节点释放的写入晶体管，另一个是在沟道中的电导读取晶体管的源极和漏极之间的区域被调制，取决于由写入晶体管存储或从电荷存储节点释放的电荷的量。读取晶体管具有比设置在逻辑块中的晶体管更厚的栅极绝缘膜，并且使用与逻辑块相同的扩散层结构。

8. 发明申请

US20080030781A1 Output control server and data output system 审中-公开
标题翻译：输出控制服务器和数据输出系统
公开(公告)号：US20080030781A1
公开(公告)日：2008-02-07
申请号：US11600171
申请日：2006-11-16
申请人： Tomohiro Iwase , Tomoyuki Ishii , Akemi Morita , Daiki Nishioka
发明人： Tomohiro Iwase , Tomoyuki Ishii , Akemi Morita , Daiki Nishioka
IPC分类号： G06K15/00
CPC分类号： H04N1/00233 , G06F3/1204 , G06F3/1259 , G06F3/1261 , G06F3/1267 , G06F3/1274 , G06F3/1288 , H04N1/00222 , H04N1/00244 , H04N2201/0094
摘要： After receiving job data from an information processing terminal, job data wherein an output device is designated as an output destination, a server preserves therein the job data until the moment when an output processing for the job data becomes practicable on the device of the output destination, then, creates second job data representing a replication of the job data before the transfer of the job data to the output device is started, and it conducts changing process for the second job data representing a replication, when it receives an instruction for changing an output destination and output setting, after the transfer. Further, the job data are preserved in the output control server until the moment when the print processing is completed at the output destination, so that they may cope with changing operations for a period up to completion of printing.
摘要翻译：在从信息处理终端接收到作业数据之后，其中将输出设备指定为输出目的地的作业数据，服务器在其中保留作业数据，直到作业数据的输出处理在输出目的地的设备上变得切实可行然后，在将作业数据传送到输出装置之前创建表示作业数据的复制的第二作业数据，并且当其接收到表示复制的指令时，对代表复制的第二作业数据进行改变处理输出目的地和输出设置，传输后。此外，作业数据被保存在输出控制服务器中，直到在输出目的地完成打印处理的时刻，使得它们可以处理直到完成打印的时间段的改变操作。

9. 发明授权

US07309892B2 Semiconductor element and semiconductor memory device using the same 失效
标题翻译：半导体元件和使用其的半导体存储器件
公开(公告)号：US07309892B2
公开(公告)日：2007-12-18
申请号：US11439152
申请日：2006-05-24
申请人： Kazuo Yano , Tomoyuki Ishii , Takashi Hashimoto , Koichi Seki , Masakazu Aoki , Takeshi Sakata , Yoshinobu Nakagome , Kan Takeuchi
发明人： Kazuo Yano , Tomoyuki Ishii , Takashi Hashimoto , Koichi Seki , Masakazu Aoki , Takeshi Sakata , Yoshinobu Nakagome , Kan Takeuchi
IPC分类号： H01L29/76 , H01L29/788 , H01L29/94
CPC分类号： B82Y10/00 , G11C11/22 , G11C11/404 , G11C16/02 , G11C16/0466 , G11C16/10 , G11C16/28 , G11C2216/06 , G11C2216/08 , H01L21/28273 , H01L21/8221 , H01L27/0688 , H01L27/105 , H01L27/115 , H01L27/11526 , H01L27/11546 , H01L27/11551 , H01L27/1203 , H01L29/42328 , H01L29/513 , H01L29/66825 , H01L29/7613 , H01L29/785 , H01L29/7888
摘要： A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.
摘要翻译：一种场效应半导体元件，其具有较少数量的元件和减小的面积，并能够自身存储数据，而不需要在低温下进行冷却;以及采用该半导体元件的存储器件。栅极沟道电容被设置得如此小，以致捕获捕获一个电子或空穴是否可以根据半导体FET元件的电流的变化来明确且明显地被检测。通过检测通过在陷阱中捕获电子或空穴而导致的半导体元件的阈值电压的变化，可以在室温下实现数据存储。

10. 发明授权

US07239336B2 Image exposing apparatus having a beam scanner 失效
标题翻译：具有光束扫描器的图像曝光装置
公开(公告)号：US07239336B2
公开(公告)日：2007-07-03
申请号：US10323415
申请日：2002-12-19
申请人： Takafumi Kuchii , Hirofumi Hayashi , Tomoyuki Ishii
发明人： Takafumi Kuchii , Hirofumi Hayashi , Tomoyuki Ishii
IPC分类号： B41J2/435
CPC分类号： G03B27/72
摘要： An image exposing apparatus forms an image on photosensitive material by the technique of exposing and forming an image through direct modulation of a semiconductor laser device. The exposing apparatus includes a beam scanning unit for scanning a beam emitted from a semiconductor laser device to photosensitive material, a laser driving unit for driving the semiconductor laser device, the laser driving unit being operable to vary its driving current to the semiconductor laser device in accordance with a received image signal, and a laser output controller operable to measure current-beam output characteristics of the semiconductor laser device over a predetermined current range and then set a correlation between the image signal for the laser driving unit and the driving current for the semiconductor laser device, based on the measurement information.
摘要翻译：图像曝光装置通过半导体激光装置的直接调制曝光和形成图像的技术在感光材料上形成图像。曝光装置包括用于将从半导体激光装置发射的光束扫描到感光材料的光束扫描单元，用于驱动半导体激光装置的激光驱动单元，激光驱动单元可操作以改变其对半导体激光装置的驱动电流以及激光输出控制器，其可操作以在预定电流范围内测量半导体激光器件的电流束输出特性，然后设置用于激光驱动单元的图像信号与用于激光驱动单元的驱动电流之间的相关性半导体激光器件，基于测量信息。

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