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1. 发明授权

US07772814B2 Step-down circuit 有权
标题翻译：降压电路
公开(公告)号：US07772814B2
公开(公告)日：2010-08-10
申请号：US11971579
申请日：2008-01-09
申请人： Yasuhiro Suematsu , Katsumi Abe
发明人： Yasuhiro Suematsu , Katsumi Abe
IPC分类号： G05F1/565 , G05F1/40
CPC分类号： G05F1/575
摘要： A step-down circuit generates a second power supply lower than a first power supply. The step-down circuit includes an output terminal connected to a load circuit, an output transistor connected between the first power supply and the output terminal, and having a gate terminal connected to a first node, a monitor transistor connected between the first power supply and a second node, and having a gate terminal connected to the first node, and a feedback circuit which sets a gate voltage of the output transistor in accordance with a difference between a voltage obtained by dividing a voltage of the second node and a reference voltage. A size of the monitor transistor is changed in accordance with an operation mode of the load circuit.
摘要翻译：降压电路产生低于第一电源的第二电源。降压电路包括连接到负载电路的输出端子，连接在第一电源和输出端子之间的输出晶体管，并且具有连接到第一节点的栅极端子，连接在第一电源和第二节点，并且具有连接到第一节点的栅极端子;以及反馈电路，其根据通过分割第二节点的电压而获得的电压与参考电压之间的差设置输出晶体管的栅极电压。监视晶体管的尺寸根据负载电路的工作模式而改变。

2. 发明申请

US20080211469A1 STEP-DOWN CIRCUIT 有权
标题翻译：降压电路
公开(公告)号：US20080211469A1
公开(公告)日：2008-09-04
申请号：US11971579
申请日：2008-01-09
申请人： Yasuhiro SUEMATSU , Katsumi Abe
发明人： Yasuhiro SUEMATSU , Katsumi Abe
IPC分类号： G05F1/00
CPC分类号： G05F1/575
摘要： A step-down circuit generates a second power supply lower than a first power supply. The step-down circuit includes an output terminal connected to a load circuit, an output transistor connected between the first power supply and the output terminal, and having a gate terminal connected to a first node, a monitor transistor connected between the first power supply and a second node, and having a gate terminal connected to the first node, and a feedback circuit which sets a gate voltage of the output transistor in accordance with a difference between a voltage obtained by dividing a voltage of the second node and a reference voltage. A size of the monitor transistor is changed in accordance with an operation mode of the load circuit.
摘要翻译：降压电路产生低于第一电源的第二电源。降压电路包括连接到负载电路的输出端子，连接在第一电源和输出端子之间的输出晶体管，并且具有连接到第一节点的栅极端子，连接在第一电源和第二节点，并且具有连接到第一节点的栅极端子;以及反馈电路，其根据通过分割第二节点的电压而获得的电压与参考电压之间的差设置输出晶体管的栅极电压。监视晶体管的尺寸根据负载电路的工作模式而改变。

3. 发明授权

US08797246B2 Driving circuit and voltage generating circuit and display unit using the same 有权
标题翻译：驱动电路和电压发生电路及使用其的显示单元
公开(公告)号：US08797246B2
公开(公告)日：2014-08-05
申请号：US13396180
申请日：2012-02-14
申请人： Katsumi Abe
发明人： Katsumi Abe
IPC分类号： G09G3/36
CPC分类号： G09G3/3696 , G09G3/3614 , G09G3/3648 , G09G2300/08 , G09G2320/02 , G09G2320/0223
摘要： A liquid crystal display substrate has a data driver circuit and a gate driver circuit for driving the liquid crystal display integrated thereon together with a common drive circuit, where common voltages VCOMH and VCOML are applied from the outside through a pad. The gate driver circuit is placed to be adjacent to one of the four terminals of the liquid crystal display. The common drive circuit is placed to be adjacent to the terminal opposite to where the gate driver circuit is placed and as close to the pad as possible while having almost the same width as the area of the gate driver circuit. The pad close to where the common drive circuit is placed is used as the pad for applying the common voltages VCOMH and VCOML.
摘要翻译：液晶显示基板具有用于驱动集成在其上的液晶显示器的数据驱动电路和栅极驱动电路以及公共驱动电路，其中通过焊盘从外部施加公共电压VCOMH和VCOML。栅极驱动器电路被放置成与液晶显示器的四个端子中的一个相邻。公共驱动电路放置成与栅极驱动电路放置的位置相对的端子，并且尽可能靠近焊盘，同时具有与栅极驱动器电路的面积几乎相同的宽度。靠近公共驱动电路放置的焊盘用作施加公共电压VCOMH和VCOML的焊盘。

4. 发明授权

US08722288B2 Diphenylnaphthylamine derivatives 有权
标题翻译：二苯基萘胺衍生物
公开(公告)号：US08722288B2
公开(公告)日：2014-05-13
申请号：US13503227
申请日：2010-11-04
申请人： Shigetaka Numazawa , Katsumi Abe , Makoto Koike , Kiyotaka Ihara
发明人： Shigetaka Numazawa , Katsumi Abe , Makoto Koike , Kiyotaka Ihara
IPC分类号： G03G15/02
CPC分类号： C07C211/58 , G03G5/0614
摘要： [Problems] To provide a novel compound which has a high carrier mobility and is useful as a charge-transporting agent that is not only capable of stably forming a photosensitive layer without precipitating crystals or forming pinholes at the time of forming the photosensitive layer but is also capable of forming an organic photosensitive material for electrophotography that has a high sensitivity and a low residual potential.[Means for Solution] A diphenylnaphthylamine derivative represented by the following general formula (1), wherein R1 to R3 are alkyl groups, k is an integer of 0 to 3, j is an integer of 0 to 4, l is an integer of 0 to 6, and X1 and X2 are hydrocarbon groups having at least one ethylenically unsaturated bond.
摘要翻译： [问题]提供具有高载流子迁移率并可用作电荷输送剂的新型化合物，其不仅能够在形成感光层时不会析出晶体或形成针孔而稳定地形成感光层，而且可以形成光敏层也能够形成具有高灵敏度和低残留电位的电子照相用有机感光材料。 [解决方案]由以下通式（1）表示的二苯基萘胺衍生物，其中R 1至R 3为烷基，k为0至3的整数，j为0至4的整数，l为0的整数至6，并且X 1和X 2为具有至少一个烯属不饱和键的烃基。

5. 发明授权

US08654114B2 Thin film transistor circuit, light emitting display apparatus, and driving method thereof 失效
标题翻译：薄膜晶体管电路，发光显示装置及其驱动方法
公开(公告)号：US08654114B2
公开(公告)日：2014-02-18
申请号：US12667827
申请日：2008-07-29
申请人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
发明人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
IPC分类号： G09G5/00
CPC分类号： G09G3/3258 , G09G3/3233 , G09G2300/0417 , G09G2300/0842 , G09G2320/0233 , G09G2320/043
摘要： In order to suppress an influence of an electrical stress on a TFT characteristic in use of a TFT, a light emitting display apparatus according to the present invention comprises organic EL devices and driving circuits for driving the organic EL devices. The driving circuit includes plural pixels each having a thin film transistor of which a threshold voltage reversibly changes due to the electrical stress applied between a gate terminal and a source terminal, and a voltage applying unit which sets gate potential of the thin film transistor higher than source potential. The voltage applying unit applies the electrical stress between the gate terminal and the source terminal at a time when the thin film transistor is not driven, so as to drive the thin film transistor in a region that the threshold voltage is saturated to the electrical stress.
摘要翻译：为了抑制电应力对使用TFT的TFT特性的影响，根据本发明的发光显示装置包括有机EL器件和用于驱动有机EL器件的驱动电路。驱动电路包括多个像素，每个像素具有薄膜晶体管，其阈值电压由于在栅极端子和源极端子之间施加的电应力而可逆地改变;以及电压施加单元，其将薄膜晶体管的栅极电位设置为高于源潜力。电压施加单元在薄膜晶体管未被驱动时在栅极端子和源极端子之间施加电应力，以便在阈值电压饱和到电应力的区域中驱动薄膜晶体管。

6. 发明授权

US08599111B2 Driving circuit of display element and image display apparatus 有权
标题翻译：显示元件和图像显示装置的驱动电路
公开(公告)号：US08599111B2
公开(公告)日：2013-12-03
申请号：US12162929
申请日：2007-03-08
申请人： Katsumi Abe , Masafumi Sano , Ryo Hayashi , Hideya Kumomi
发明人： Katsumi Abe , Masafumi Sano , Ryo Hayashi , Hideya Kumomi
IPC分类号： G09G3/30 , G09G5/10
CPC分类号： G09G3/3283 , G09G3/2014 , G09G3/325 , G09G2300/0819 , G09G2300/0852 , G09G2300/0861 , G09G2310/0251 , G09G2310/066 , G09G2320/0238 , G09G2320/043
摘要： A driving circuit of a display element includes a current source circuit having a first transistor and a holding circuit for holding a gate voltage of the first transistor during a first period at an electric potential corresponding to a constant current to be supplied to the display element, and a control circuit including a second transistor connected in series to the current source circuit and connected in parallel to the display element and the capacitor element whose one terminal is connected to a gate of the second transistor and the other terminal is connected to a line, and controlling the light emission time of the display element by controlling the second transistor during a third period. A constant voltage is applied from the line during the first period. The gray-scale voltage is applied from the line during a second period, and the gate of the second transistor and the one terminal are short-circuited. In addition, an electric charge based on the difference between the gray-scale voltage and the gate voltage of the second transistor is accumulated in the capacitor element, and a sweep voltage is applied during the third period, so that the ON time of the second transistor is controlled.
摘要翻译：显示元件的驱动电路包括具有第一晶体管和保持电路的电流源电路，所述保持电路用于在第一周期期间保持与要提供给显示元件的恒定电流相对应的电位的第一晶体管的栅极电压，以及控制电路，包括与所述电流源电路串联连接并并联连接到所述显示元件的第二晶体管和所述电容器元件，所述电容器元件的一个端子连接到所述第二晶体管的栅极，并且所述另一端子连接到线路，以及通过在第三周期期间控制所述第二晶体管来控制所述显示元件的发光时间。在第一周期期间从线路施加恒定电压。在第二周期期间，从线路施加灰度电压，并且第二晶体管的栅极和一个端子短路。此外，基于第二晶体管的灰度电压和栅极电压之间的差异的电荷累积在电容器元件中，并且在第三周期期间施加扫描电压，使得第二时间的导通时间晶体管被控制。

7. 发明授权

US08525175B2 Electronic device having an isolating element and display apparatus including the electronic device 有权
标题翻译：具有隔离元件的电子设备和包括该电子设备的显示设备
公开(公告)号：US08525175B2
公开(公告)日：2013-09-03
申请号：US13161328
申请日：2011-06-15
申请人： Sho Suzuki , Katsumi Abe , Ryo Hayashi , Hideya Kumomi
发明人： Sho Suzuki , Katsumi Abe , Ryo Hayashi , Hideya Kumomi
IPC分类号： H01L29/04
CPC分类号： H01L27/1225 , H01L27/124
摘要： An electronic device includes: multiple electronic elements each including a semiconductor film; and an element isolation region provided between adjacent ones of the multiple electronic elements, the element isolation region including a semiconductor film having a bandgap of 1.95 eV or more, an insulating film, and an element isolation electrode, the element isolation electrode being an electrode which is separated from the semiconductor film of the element isolation region by the insulating film and is applied with a voltage so as to increase a resistance of the semiconductor film of the element isolation region, to thereby electrically isolate the multiple electronic elements from one another.
摘要翻译：电子设备包括：多个电子元件，每个电子元件包括半导体膜; 以及设置在所述多个电子元件的相邻元件之间的元件隔离区域，所述元件隔离区域包括具有1.95eV以上的带隙的半导体膜，绝缘膜和元件隔离电极，所述元件隔离电极为电极，通过绝缘膜与元件隔离区域的半导体膜分离，并施加电压以增加元件隔离区域的半导体膜的电阻，从而使多个电子元件彼此电隔离。

8. 发明申请

US20130214854A1 SEMICONDUCTOR DEVICE AND METHOD OF DRIVING THE SAME 审中-公开
标题翻译：半导体器件及其驱动方法
公开(公告)号：US20130214854A1
公开(公告)日：2013-08-22
申请号：US13881266
申请日：2011-10-31
申请人： Katsumi Abe , Hideya Kumomi , Ryo Hayashi , Tatsuya Iwasaki
发明人： Katsumi Abe , Hideya Kumomi , Ryo Hayashi , Tatsuya Iwasaki
IPC分类号： H01L29/786 , G05F3/02
CPC分类号： H01L29/7869 , G05F3/02 , H01L27/0705 , H01L27/11807 , H01L27/1203 , H03K17/063 , H03K17/693 , H03K19/20
摘要： Provided is a semiconductor device, including an electrode, a first insulator, a first semiconductor having a bandgap of 2 eV or greater, a second insulator, and a second semiconductor, which are stacked on one another, and at least further including one or more electrodes in contact with the first semiconductor and two or more electrodes in contact with the second semiconductor.
摘要翻译：提供了一种半导体器件，其包括彼此堆叠的电极，第一绝缘体，具有2eV以上的带隙的第一半导体，第二绝缘体和第二半导体，并且至少进一步包括一个或多个与第一半导体接触的电极和与第二半导体接触的两个或多个电极。

9. 发明申请

US20120212471A1 DRIVING CIRCUIT AND VOLTAGE GENERATING CIRCUIT AND DISPLAY UNIT USING THE SAME 有权
标题翻译：驱动电路和电压发生电路及显示单元
公开(公告)号：US20120212471A1
公开(公告)日：2012-08-23
申请号：US13396180
申请日：2012-02-14
申请人： Katsumi Abe
发明人： Katsumi Abe
IPC分类号： G09G5/00
CPC分类号： G09G3/3696 , G09G3/3614 , G09G3/3648 , G09G2300/08 , G09G2320/02 , G09G2320/0223
摘要： To provide a liquid crystal display capable of implementing a symmetrical frame and a narrower frame without lowering drive capability of a common drive circuit.[Solution]A liquid crystal display substrate 10 has a data driver circuit 2 and a gate driver circuit 3 for driving the liquid crystal display integrated thereon together with a common drive circuit 4, where common voltages VCOMH and VCOML are applied from the outside through a pad. The gate driver circuit 3 is placed to be adjacent to one of the four terminals of the liquid crystal display. The common drive circuit 4 is placed to be adjacent to the terminal opposite to where the gate driver circuit 3 is placed and as close to the pad as possible while having almost the same width as the area of the gate driver circuit 3. The pad close to where the common drive circuit 4 is placed is used as the pad for applying the common voltages VCOMH and VCOML.
摘要翻译：提供能够实现对称框架和较窄框架而不降低公共驱动电路的驱动能力的液晶显示器。 [解决方案]液晶显示基板10具有数据驱动电路2和用于驱动集成在其上的液晶显示器的栅极驱动电路3以及公共驱动电路4，其中公共电压VCOMH和VCOML从外部通过一个垫。栅极驱动器电路3被放置成与液晶显示器的四个端子中的一个相邻。公共驱动电路4被放置成与栅极驱动器电路3相对的端子相邻，并且尽可能靠近焊盘，同时具有与栅极驱动器电路3的面积几乎相同的宽度。焊盘闭合使用公共驱动电路4的位置作为用于施加公共电压VCOMH和VCOML的焊盘。

10. 发明授权

US08084331B2 Method of treating semiconductor element 有权
标题翻译：半导体元件的处理方法
公开(公告)号：US08084331B2
公开(公告)日：2011-12-27
申请号：US12865032
申请日：2009-03-02
申请人： Masato Ofuji , Katsumi Abe , Hisae Shimizu , Ryo Hayashi , Masafumi Sano , Hideya Kumomi , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko
发明人： Masato Ofuji , Katsumi Abe , Hisae Shimizu , Ryo Hayashi , Masafumi Sano , Hideya Kumomi , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko
IPC分类号： H01L21/331
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78633
摘要： In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.
摘要翻译：在处理至少包括半导体的半导体元件的方法中，通过用比半导体的吸收边缘波长更长的光照射半导体来改变半导体元件的阈值电压。半导体中间隙状态的面密度为1013cm-2eV-1或更小。带隙可以是2eV或更大。半导体可以包括选自In，Ga，Zn和Sn中的至少一种。半导体可以是选自由无定形In-Ga-Zn-O（IGZO），非晶In-Zn-O（IZO）和无定形Zn-Sn-O（ZTO）组成的组中的一种。光照射可以引起半导体元件中的阈值电压偏移，该偏移与由制造工艺历史，时间依赖变化，电应力或热应力引起的阈值电压偏移相反。

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