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    • 2. 发明申请
    • RESIST PROCESSING METHOD
    • 电阻加工方法
    • US20110189618A1
    • 2011-08-04
    • US13062180
    • 2009-09-01
    • Mitsuhiro HataNobuo AndoSatoshi YamamotoJunji ShigematsuAkira Kamabuchi
    • Mitsuhiro HataNobuo AndoSatoshi YamamotoJunji ShigematsuAkira Kamabuchi
    • G03F7/20
    • G03F7/0035G03F7/0045G03F7/0046G03F7/0397G03F7/40
    • A resist processing method comprises the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, a photo acid generator (B), a cross-linking agent (C) and an acid amplifier (D) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing to the first resist film; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and drying; (8) pre-baking the second resist film; (9) exposing the second resist film; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern.
    • 抗蚀剂处理方法包括以下步骤:(1)通过施加第一抗蚀剂组合物形成第一抗蚀剂膜,所述第一抗蚀剂组合物包含:具有酸不稳定基团的树脂(A),其在碱性水溶液中不溶或难溶,并且呈现 通过酸,光酸产生剂(B),交联剂(C)和酸放大器(D)的作用将其溶于碱水溶液中并干燥; (2)预烘第一抗蚀膜; (3)暴露于第一抗蚀膜; (4)第一抗蚀剂膜的曝光后烘烤; (5)用第一碱性显影剂显影以获得第一抗蚀剂图案; (6)硬烘烤第一抗蚀剂图案,(7)通过将第二抗蚀剂组合物施加到第一抗蚀剂图案上并干燥获得第二抗蚀剂膜; (8)预烘烤第二抗蚀剂膜; (9)使第二抗蚀剂膜曝光; (10)曝光后烘烤第二抗蚀膜; 和(11)用第二碱性显影剂显影以获得第二抗蚀剂图案。
    • 3. 发明申请
    • Chemically amplified resist composition
    • 化学放大抗蚀剂组合物
    • US20080213695A1
    • 2008-09-04
    • US11987672
    • 2007-12-03
    • Satoshi YamaguchiSatoshi YamamotoNobuo Ando
    • Satoshi YamaguchiSatoshi YamamotoNobuo Ando
    • G03F7/004
    • G03F7/0045G03F7/0046G03F7/0397Y10S430/106Y10S430/111Y10S430/122Y10S430/123
    • The present invention provides a chemically amplified resist composition comprising: (A) a salt represented by (I): wherein R21 represents a C1-C30 hydrocarbon group, Q1 and Q2 each represent a fluorine atom, and A+ represents at least one organic cation represented by (Ia): wherein P1-P3 each represent C1-C30 alkyl group, a cation represented by (Ib): wherein P4 and P5 each represent a hydrogen atom, and a cation represented by (Ic): wherein P10-P21 each represent hydrogen atom, B represents sulfur or oxygen atom and m represents 0 or 1; (B) a salt (II): wherein R22 represents C1-C30 hydrocarbon group, Q3 and Q4 each represent fluorine atom, and A′+ represents an organic cation (IIa): wherein P6 and P7 are each a C1-C12 alkyl group, P8 represents hydrogen atom, P9 represents C1-C12 alkyl group; and (C) a resin which contains a structural unit having an acid-labile group.
    • 本发明提供一种化学放大抗蚀剂组合物,其包含:(A)由(I)表示的盐:其中R 21表示C 1 -C 30烃基,Q 1和 Q 2各自表示氟原子,A 0 +表示由(Ia)表示的至少一种有机阳离子:其中P 1〜 SUP> 3各自表示C1-C30烷基,由(Ib)表示的阳离子:其中P 4和P 5各自表示氢原子,和 由(Ic)表示的阳离子:其中P为10〜21个,各自表示氢原子,B表示硫或氧原子,m表示0或1; (B)盐(II):其中R 22表示C 1 -C 30烃基,Q 3和Q 4各自表示氟原子, 并且A' +表示有机阳离子(IIa):其中P 6和P 7各自为C 1 -C 12烷基, SUP> 8表示氢原子,P 9表示C1-C12烷基; 和(C)含有具有酸不稳定基团的结构单元的树脂。
    • 9. 发明授权
    • Resist composition and method for producing resist pattern
    • 抗蚀剂组合物和抗蚀剂图案的制造方法
    • US09291893B2
    • 2016-03-22
    • US13281145
    • 2011-10-25
    • Tatsuro MasuyamaSatoshi YamamotoKoji Ichikawa
    • Tatsuro MasuyamaSatoshi YamamotoKoji Ichikawa
    • G03F7/004G03F7/039G03F7/20
    • G03F7/0046G03F7/0045G03F7/0397G03F7/2041
    • A resist composition contains; a resin having a structural unit represented by the formula (aa) and a structural unit represented by the formula (ab); and an acid generator, wherein Raa1 represents a hydrogen atom and a methyl group; Aaa1 represents an optionally substituted C1 to C6 alkanediyl group etc.; Raa2 represents an optionally substituted C1 to C18 aliphatic hydrocarbon group; Rab1 represents a hydrogen atom and a methyl group; Aab1 represents a single bond, an optionally substituted C1 to C6 alkanediyl group etc.; W1 represents an optionally substituted C4 to C24 alicyclic hydrocarbon group; n represents 1 or 2; Aab2 in each occurrence independently represents an optionally substituted C1 to C6 aliphatic hydrocarbon group; Rab2 in each occurrence independently represents a C1 to C12 fluorinated alkyl group.
    • 抗蚀剂组合物含有 具有由式(aa)表示的结构单元的树脂和由式(ab)表示的结构单元; 和酸产生剂,其中Raa1表示氢原子和甲基; Aaa1表示可以具有取代基的C1〜C6烷二基等。 Raa2表示任选取代的C1至C18脂族烃基; Rab1表示氢原子和甲基; Aab1表示单键,任选取代的C 1至C 6烷二基等; W1表示任选取代的C4至C24脂环族烃基; n表示1或2; Aab2各自独立地表示任选取代的C 1至C 6脂族烃基; Rab2各自独立地表示C1〜C12氟化烷基。
    • 10. 发明授权
    • Resist composition and method for producing resist pattern
    • 抗蚀剂组合物和抗蚀剂图案的制造方法
    • US09229320B2
    • 2016-01-05
    • US13196446
    • 2011-08-02
    • Koji IchikawaSatoshi Yamamoto
    • Koji IchikawaSatoshi Yamamoto
    • G03F7/004G03F7/039G03F7/20
    • G03F7/0045G03F7/0046G03F7/0397G03F7/2041G03F7/2059
    • A resist composition contains; a resin having a structural unit derived from a compound represented by the formula (a); and an acid generator represented by the formula (B1). wherein R1 represents a hydrogen atom or a methyl group; A10 represents a single bond, an optionally substituted C1 to C6 alkanediyl group or a group represented by formula (a-1) defined in the specification; W1 represents an optionally substituted C4 to C36 alicyclic hydrocarbon group; A20 in each occurrence independently represents an optionally substituted C1 to C6 aliphatic hydrocarbon group; R2 in each occurrence independently represents a C1 to C12 perfluoroalkyl group; n represents 1 or 2; Q1 and Q2 independently represent a fluorine atom or a C1 to C6 perfluoroalkyl group; Lb1 represents an optionally substituted C1 to C17 divalent aliphatic hydrocarbon group; Y represents an optionally substituted C1 to C18 aliphatic hydrocarbon group; and Z+ represents an organic cation.
    • 抗蚀剂组合物含有 具有衍生自由式(a)表示的化合物的结构单元的树脂; 和由式(B1)表示的酸发生剂。 其中R1表示氢原子或甲基; A10表示单键,可以具有取代基的C1〜C6烷二基或由说明书中定义的式(a-1)表示的基团; W1表示任选取代的C4至C36脂环族烃基; A20每次独立地表示任选取代的C 1至C 6脂族烃基; R2各自独立地表示C1〜C12全氟烷基; n表示1或2; Q1和Q2独立地表示氟原子或C1〜C6全氟烷基; Lb1表示任选取代的C 1至C 17二价脂族烃基; Y表示任选取代的C 1至C 18脂族烃基; Z +表示有机阳离子。