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1. 发明申请

US20090236634A1 Nitride semiconductor epitaxial wafer and nitride semiconductor device 有权
标题翻译：氮化物半导体外延晶片和氮化物半导体器件
公开(公告)号：US20090236634A1
公开(公告)日：2009-09-24
申请号：US12382481
申请日：2009-03-17
申请人： Yoshihiko Moriya , Takeshi Tanaka , Yohei Otoki , Masae Sahara
发明人： Yoshihiko Moriya , Takeshi Tanaka , Yohei Otoki , Masae Sahara
IPC分类号： H01L29/205
CPC分类号： H01L29/2003 , H01L29/1075 , H01L29/7786
摘要： A nitride semiconductor epitaxial wafer includes a growth substrate including a surface for growing a nitride semiconductor thereon, a first structure layer formed on the growth substrate, a dislocation propagation direction changing layer formed on the first structure layer for changing a propagation direction of a dislocation propagated in the first structure layer into a lateral direction, a second structure layer formed on the dislocation propagation direction changing layer, and a buffer layer formed on the second structure layer for changing a propagation direction of a dislocation propagated in the second structure layer.
摘要翻译：氮化物半导体外延晶片包括生长衬底，其包括用于在其上生长氮化物半导体的表面，形成在生长衬底上的第一结构层，形成在第一结构层上的位错传播方向改变层，用于改变传播的位错的传播方向在第一结构层中形成横向，形成在位错传播方向改变层上的第二结构层，以及形成在第二结构层上的缓冲层，用于改变在第二结构层中传播的位错的传播方向。

2. 发明授权

US07948009B2 Nitride semiconductor epitaxial wafer and nitride semiconductor device 有权
标题翻译：氮化物半导体外延晶片和氮化物半导体器件
公开(公告)号：US07948009B2
公开(公告)日：2011-05-24
申请号：US12382481
申请日：2009-03-17
申请人： Yoshihiko Moriya , Takeshi Tanaka , Yohei Otoki , Masae Sahara
发明人： Yoshihiko Moriya , Takeshi Tanaka , Yohei Otoki , Masae Sahara
IPC分类号： H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L29/2003 , H01L29/1075 , H01L29/7786
摘要： A nitride semiconductor epitaxial wafer includes a growth substrate including a surface for growing a nitride semiconductor thereon, a first structure layer formed on the growth substrate, a dislocation propagation direction changing layer formed on the first structure layer for changing a propagation direction of a dislocation propagated in the first structure layer into a lateral direction, a second structure layer formed on the dislocation propagation direction changing layer, and a buffer layer formed on the second structure layer for changing a propagation direction of a dislocation propagated in the second structure layer.
摘要翻译：氮化物半导体外延晶片包括生长衬底，其包括用于在其上生长氮化物半导体的表面，形成在生长衬底上的第一结构层，形成在第一结构层上的位错传播方向改变层，用于改变传播的位错的传播方向在第一结构层中形成横向，形成在位错传播方向改变层上的第二结构层，以及形成在第二结构层上的缓冲层，用于改变在第二结构层中传播的位错的传播方向。

3. 发明授权

US08440549B2 Compound semiconductor device including aln layer of controlled skewness 有权
标题翻译：复合半导体器件包括受控偏移的Aln层
公开(公告)号：US08440549B2
公开(公告)日：2013-05-14
申请号：US13237084
申请日：2011-09-20
申请人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
发明人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
IPC分类号： H01L21/20 , H01L33/32
CPC分类号： H01L21/02581 , H01L21/02378 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262
摘要： A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.
摘要翻译：半导体外延基板包括：单晶基板; 在单晶衬底上外延生长的AlN层; 以及在所述AlN层上外延生长的氮化物半导体层，其中，所述AlN层与所述氮化物半导体层之间的界面的粗糙度大于所述单晶衬底和所述AlN层之间的界面，并且所述AlN层的上表面的倾斜度是积极的。

4. 发明授权

US08264006B2 Compound semiconductor device including AIN layer of controlled skewness 有权
标题翻译：复合半导体器件包括受控偏移的AIN层
公开(公告)号：US08264006B2
公开(公告)日：2012-09-11
申请号：US12772624
申请日：2010-05-03
申请人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
发明人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
IPC分类号： H01L29/778 , H01L21/20
CPC分类号： H01L21/02581 , H01L21/02378 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262
摘要： A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.
摘要翻译：半导体外延基板包括：单晶基板; 在单晶衬底上外延生长的AlN层; 以及在所述AlN层上外延生长的氮化物半导体层，其中，所述AlN层与所述氮化物半导体层之间的界面的粗糙度大于所述单晶衬底和所述AlN层之间的界面，并且所述AlN层的上表面的倾斜度是积极的。

5. 发明申请

US20120067275A1 COMPOUND SEMICONDUCTOR DEVICE INCLUDING AIN LAYER OF CONTROLLED SKEWNESS 有权
标题翻译：化合物半导体器件，其中包括控制层的一层
公开(公告)号：US20120067275A1
公开(公告)日：2012-03-22
申请号：US13237084
申请日：2011-09-20
申请人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
发明人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
IPC分类号： C30B25/10 , C30B25/02
CPC分类号： H01L21/02581 , H01L21/02378 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262
摘要： A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.
摘要翻译：半导体外延基板包括：单晶基板; 在单晶衬底上外延生长的AlN层; 以及在所述AlN层上外延生长的氮化物半导体层，其中，所述AlN层与所述氮化物半导体层之间的界面的粗糙度大于所述单晶衬底和所述AlN层之间的界面，并且所述AlN层的上表面的倾斜度是积极的。

6. 发明授权

US08264005B2 Compound semiconductor device including AIN layer of controlled skewness 有权
公开(公告)号：US08264005B2
公开(公告)日：2012-09-11
申请号：US12772661
申请日：2010-05-03
申请人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
发明人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
IPC分类号： H01L29/778 , H01L21/20
CPC分类号： H01L21/02581 , H01L21/02378 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262
摘要： A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.

7. 发明授权

US08044492B2 Compound semiconductor device including AIN layer of controlled skewness 有权
标题翻译：复合半导体器件包括受控偏移的AIN层
公开(公告)号：US08044492B2
公开(公告)日：2011-10-25
申请号：US12059693
申请日：2008-03-31
申请人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
发明人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
IPC分类号： H01L29/30 , H01L33/22
CPC分类号： H01L21/02581 , H01L21/02378 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262
摘要： A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.
摘要翻译：半导体外延基板包括：单晶基板; 在单晶衬底上外延生长的AlN层; 以及在所述AN层上外延生长的氮化物半导体层，其中，所述AlN层与所述氮化物半导体层之间的界面的粗糙度大于所述单晶衬底和AlN层之间的界面，并且所述AlN层的上表面的偏斜度是积极的。

8. 发明授权

US09690875B2 Providing search results for mobile computing devices 有权
公开(公告)号：US09690875B2
公开(公告)日：2017-06-27
申请号：US13344706
申请日：2012-01-06
申请人： Tuan Huynh , Hiromi Kobayashi , Takeshi Tanaka , Hirokazu Sawada , Tsutomu Kagoshima
发明人： Tuan Huynh , Hiromi Kobayashi , Takeshi Tanaka , Hirokazu Sawada , Tsutomu Kagoshima
IPC分类号： G06F17/30
CPC分类号： G06F17/30991 , G06F17/30598 , G06F17/30867
摘要： Search results are provided for mobile computing devices. Search results are retrieved based on a search term. Each of the search results is assigned to one or more categories. The categories and the assigned search results are provided to the mobile computing device. The mobile computing device is adapted to display each of the categories and a partial list of the search results for each of the categories.

9. 发明申请

US20150261247A1 STATION BUILDING POWER SUPPLY DEVICE 有权
标题翻译：站立建筑电源设备
公开(公告)号：US20150261247A1
公开(公告)日：2015-09-17
申请号：US14425663
申请日：2012-09-05
申请人： Takeshi Tanaka , Yasushi Matsumura , Wataru Okuda , Shuji Ishikura
发明人： Takeshi Tanaka , Yasushi Matsumura , Wataru Okuda , Shuji Ishikura
IPC分类号： G05F3/04 , H02M7/44
CPC分类号： G05F3/04 , H02J9/062 , H02M7/44 , Y10T307/352
摘要： A station building power supply device according to the present invention includes: a station building power generation unit including an inverter main circuit and an inverter control circuit to control the inverter main circuit, in which the inverter main circuit converts a voltage supplied from an overhead wire into a voltage required by loads in a station building; a control-circuit power generation unit that converts a voltage supplied to the loads in the station building and generates an input voltage for the inverter control circuit; and a start-up power generation unit that converts a voltage supplied from the overhead wire and generates an input voltage for the inverter control circuit, in a state where the inverter main circuit has stopped the operation and the control-circuit power generation unit has stopped an operation of generating the input voltage for the inverter control circuit.
摘要翻译：根据本发明的站台建筑物供电装置包括：站建筑发电单元，包括逆变器主电路和逆变器控制电路，用于控制逆变器主电路，其中逆变器主电路将从架空线成为车站建筑物载荷所需的电压; 控制电路发电单元，其转换提供给所述车站建筑物中的负载的电压，并产生用于所述逆变器控制电路的输入电压; 以及启动电力发生单元，其在逆变器主电路停止运行并且控制电路发电单元已停止的状态下转换从架空线提供的电压并产生用于逆变器控制电路的输入电压产生用于逆变器控制电路的输入电压的操作。

10. 发明申请

US20150256061A1 INVERTER DEVICE, TRANSFORMER, AND TRANSFORMER MANUFACTURING METHOD 有权
标题翻译：逆变器装置，变压器和变压器制造方法
公开(公告)号：US20150256061A1
公开(公告)日：2015-09-10
申请号：US14433540
申请日：2012-10-19
申请人： Yoshinobu KOJI , Takeshi TANAKA , Takeshi NAGATA
发明人： Yoshinobu Koji , Takeshi Tanaka , Takeshi Nagata
IPC分类号： H02M1/44 , H01F27/33 , H01F41/06 , H01F27/30 , H01F41/02 , H02M7/42 , H01F27/24
CPC分类号： H02M1/44 , B60L2200/26 , H01F27/24 , H01F27/30 , H01F27/306 , H01F27/33 , H01F30/12 , H01F41/0233 , H01F41/06 , H02M7/42 , Y10T29/49071
摘要： Provided is an inverter device that can reduce high-frequency noise. The inverter device includes a transformer for converting the voltage of the AC power output from an inverter circuit and outputting the resulting power. Each of first to third coil sections for converting the voltage of the AC power output from the inverter circuit and outputting the resulting power includes an inner coil respectively wound around first to third core sections and an outer coil. The first to third core sections are each column shaped having an axis in the Y direction, and are arranged in the Z direction. Non-magnetic pressing members are provided between the adjacent coil sections and between the adjacent coil sections. The pressing members press against the adjacent coil sections and the adjacent coil sections respectively.
摘要翻译：提供了可以降低高频噪声的逆变器装置。逆变器装置包括用于转换从逆变器电路输出的AC电力的电压并输出所得功率的变压器。用于转换从逆变器电路输出的交流电力的电压并输出所得功率的第一至第三线圈部分包括分别绕第一至第三芯部分和外部线圈缠绕的内部线圈。第一至第三芯部分各自具有在Y方向上具有轴的列成形，并且沿Z方向排列。非磁性按压部件设置在相邻的线圈部之间和相邻的线圈部之间。按压构件分别压靠相邻的线圈部分和相邻的线圈部分。

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