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1. 发明授权

US08923781B2 Semiconductor switch and wireless device 有权
标题翻译：半导体开关和无线设备
公开(公告)号：US08923781B2
公开(公告)日：2014-12-30
申请号：US12952762
申请日：2010-11-23
申请人： Yugo Kunishi , Toshiki Seshita , Yoshitomo Sagae , Mitsuru Sugawara
发明人： Yugo Kunishi , Toshiki Seshita , Yoshitomo Sagae , Mitsuru Sugawara
IPC分类号： H04B1/44 , H03K17/00 , H03K17/691 , H03K3/354 , H03K17/687
CPC分类号： H03K17/6871 , H03K3/354 , H03K17/005 , H03K17/691
摘要： According to one embodiment, a semiconductor switch includes a voltage generator, a voltage controller, a driver, and a switch unit. The voltage generator generates a negative first potential. The voltage controller controls the first potential according to a terminal switch signal input from an outside. The driver is input the terminal switch signal, and outputs at least one selected from the first potential and the second potential based on the terminal switch signal. The second potential is a power supply voltage or is higher than the power supply voltage. The switch unit is provided on an SOT substrate, switches a connection between an antenna terminal and any one of high frequency terminals based on the output of the driver.
摘要翻译：根据一个实施例，半导体开关包括电压发生器，电压控制器，驱动器和开关单元。电压发生器产生负第一电位。电压控制器根据从外部输入的端子开关信号来控制第一电位。驱动器输入端子开关信号，并且基于端子开关信号输出从第一电位和第二电位中选择的至少一个。第二个电位是电源电压或高于电源电压。开关单元设置在SOT基板上，基于驱动器的输出，切换天线端子与高频端子中的任一个之间的连接。

2. 发明授权

US08698574B2 High-frequency switch 有权
标题翻译：高频开关
公开(公告)号：US08698574B2
公开(公告)日：2014-04-15
申请号：US13046937
申请日：2011-03-14
申请人： Masayuki Sugiura , Noriyasu Kurihara , Toshiki Seshita , Hirotsugu Wakimoto , Yoshitomo Sagae , Toshiyuki Shimizu , Yoshio Itagaki , Masanori Ochi
发明人： Masayuki Sugiura , Noriyasu Kurihara , Toshiki Seshita , Hirotsugu Wakimoto , Yoshitomo Sagae , Toshiyuki Shimizu , Yoshio Itagaki , Masanori Ochi
IPC分类号： H01P1/10 , H01P1/15
CPC分类号： H03K17/6874 , H01L23/66 , H01L24/05 , H01L24/13 , H01L24/16 , H01L2223/6627 , H01L2224/0401 , H01L2224/05554 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/13144 , H01L2224/16157 , H01L2224/16165 , H01L2924/13091 , H01L2924/14 , H01L2924/142 , H01L2924/00
摘要： According to one embodiment, a high-frequency switch includes a high-frequency switch IC chip. The high-frequency switch IC chip has a high-frequency switching circuit section including an input terminal, a plurality of switching elements, a plurality of high-frequency signal lines, and a plurality of output terminals. The input terminal is connected to each of the plurality of output terminals via each of the plurality of switching elements with the high-frequency signal lines having the same lengths. The plurality of output terminals are arranged on a surface at an outer periphery of the high-frequency switch IC chip. The input terminal is arranged on the surface of the high-frequency switch IC chip at the center of the high-frequency switch IC circuit section.
摘要翻译：根据一个实施例，高频开关包括高频开关IC芯片。高频开关IC芯片具有包括输入端子，多个开关元件，多个高频信号线以及多个输出端子的高频开关电路部。输入端子经由多个开关元件中的每一个连接到多个输出端子中的每一个，高频信号线具有相同的长度。多个输出端子布置在高频开关IC芯片的外周的表面上。输入端子布置在高频开关IC电路部分中心的高频开关IC芯片的表面上。

3. 发明申请

US20110159822A1 SEMICONDUCTOR SWITCH AND WIRELESS DEVICE 有权
标题翻译：半导体开关和无线设备
公开(公告)号：US20110159822A1
公开(公告)日：2011-06-30
申请号：US12952762
申请日：2010-11-23
申请人： Yugo Kunishi , Toshiki Seshita , Yoshitomo Sagae , Mitsuru Sugawara
发明人： Yugo Kunishi , Toshiki Seshita , Yoshitomo Sagae , Mitsuru Sugawara
IPC分类号： H04B1/44 , H03K17/00
CPC分类号： H03K17/6871 , H03K3/354 , H03K17/005 , H03K17/691
摘要： According to one embodiment, a semiconductor switch includes a voltage generator, a voltage controller, a driver, and a switch unit. The voltage generator generates a negative first potential. The voltage controller controls the first potential according to a terminal switch signal input from an outside. The driver is input the terminal switch signal, and outputs at least one selected from the first potential and the second potential based on the terminal switch signal. The second potential is a power supply voltage or is higher than the power supply voltage. The switch unit is provided on an SOT substrate, switches a connection between an anntena terminal and any one of high frequency terminals based on the output of the driver.
摘要翻译：根据一个实施例，半导体开关包括电压发生器，电压控制器，驱动器和开关单元。电压发生器产生负第一电位。电压控制器根据从外部输入的端子开关信号来控制第一电位。驱动器输入端子开关信号，并且基于端子开关信号输出从第一电位和第二电位中选择的至少一个。第二个电位是电源电压或高于电源电压。开关单元设置在SOT基板上，基于驱动器的输出，切换在内部端子和任何一个高频端子之间的连接。

4. 发明申请

US20090181630A1 RADIO FREQUENCY SWITCH CIRCUIT 审中-公开
标题翻译：无线电频率开关电路
公开(公告)号：US20090181630A1
公开(公告)日：2009-07-16
申请号：US12354185
申请日：2009-01-15
申请人： Toshiki Seshita , Yoshitomo Sagae
发明人： Toshiki Seshita , Yoshitomo Sagae
IPC分类号： H04B1/18
CPC分类号： H04B1/006 , H03K17/693 , H04B1/48
摘要： A radio frequency switch circuit includes: an antenna terminal; a first and second RF terminal; a first through transistor placed between the antenna terminal and the first RF terminal; a second through transistor placed between the antenna terminal and the second RF terminal; a first shunt transistor placed between ground and the first RF terminal; a second shunt transistor placed between the ground and the second RF terminal; and a distortion compensation circuit including a reverse parallel connected MOS capacitor whose capacitance around 0 volts has voltage dependence that is convex to the minus direction, the distortion compensation circuit being operable to compensate for voltage dependence of off-capacitance around 0 volts of the first and second through transistor and the first and second shunt transistor that is convex to the plus direction. Electrical connection between the antenna terminal and the first and second RF terminal is switchable.
摘要翻译：射频切换电路包括：天线端子; 第一和第二RF终端; 放置在天线端子和第一RF端子之间的第一通晶体管; 位于天线端子和第二RF端子之间的第二通过晶体管; 放置在地和第一RF端之间的第一并联晶体管; 放置在地和第二RF端之间的第二分流晶体管; 以及包括反向并联MOS电容器的失真补偿电路，所述反并联MOS电容器的电容约为0伏特，其电压依赖性正向负方向凸起，所述失真补偿电路可用于补偿第一和第二电压的0伏附近的关断电容的电压依赖性，第二通过晶体管和对正方向凸起的第一和第二分流晶体管。天线端子与第一和第二RF端子之间的电气连接是可切换的。

5. 发明授权

US07468543B2 Semiconductor device, communication device, and semiconductor device inspecting method 失效
标题翻译：半导体器件，通信器件和半导体器件检查方法
公开(公告)号：US07468543B2
公开(公告)日：2008-12-23
申请号：US10942849
申请日：2004-09-17
申请人： Yoshitomo Sagae , Toshiki Seshita
发明人： Yoshitomo Sagae , Toshiki Seshita
IPC分类号： H01L27/24
CPC分类号： H01P1/15 , H03K17/693 , Y10T29/49004
摘要： A semiconductor device comprises a semiconductor switching element having a first electrode, a second electrode and a third electrode, and permitting a high-frequency signal to pass through between the first electrode and the second electrode, depending upon the potential of the third electrode, bias voltages at the first and second electrodes being substantially equal; and an inductor element and a capacitor element which are connected in parallel with respect to the semiconductor switching element at the first and second electrodes and are connected in series to each other.
摘要翻译：半导体器件包括具有第一电极，第二电极和第三电极的半导体开关元件，并且根据第三电极的电位，允许高频信号在第一电极和第二电极之间通过，偏置第一和第二电极处的电压基本相等; 以及电感器元件和电容器元件，其在第一和第二电极处相对于半导体开关元件并联连接并且彼此串联连接。

6. 发明申请

US20120038411A1 HIGH-FREQUENCY SWITCH 有权
标题翻译：高频开关
公开(公告)号：US20120038411A1
公开(公告)日：2012-02-16
申请号：US13046937
申请日：2011-03-14
申请人： Masayuki Sugiura , Noriyasu Kurihara , Toshiki Seshita , Hirotsugu Wakimoto , Yoshitomo Sagae , Toshiyuki Shimizu , Yoshio Itagaki , Masanori Ochi
发明人： Masayuki Sugiura , Noriyasu Kurihara , Toshiki Seshita , Hirotsugu Wakimoto , Yoshitomo Sagae , Toshiyuki Shimizu , Yoshio Itagaki , Masanori Ochi
IPC分类号： H03K17/56 , H03K17/687
CPC分类号： H03K17/6874 , H01L23/66 , H01L24/05 , H01L24/13 , H01L24/16 , H01L2223/6627 , H01L2224/0401 , H01L2224/05554 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/13144 , H01L2224/16157 , H01L2224/16165 , H01L2924/13091 , H01L2924/14 , H01L2924/142 , H01L2924/00
摘要： According to one embodiment, a high-frequency switch includes a high-frequency switch IC chip. The high-frequency switch IC chip has a high-frequency switching circuit section including an input terminal, a plurality of switching elements, a plurality of high-frequency signal lines, and a plurality of output terminals. The input terminal is connected to each of the plurality of output terminals via each of the plurality of switching elements with the high-frequency signal lines having the same lengths. The plurality of output terminals are arranged on a surface at an outer periphery of the high-frequency switch IC chip. The input terminal is arranged on the surface of the high-frequency switch IC chip at the center of the high-frequency switch IC circuit section.
摘要翻译：根据一个实施例，高频开关包括高频开关IC芯片。高频开关IC芯片具有包括输入端子，多个开关元件，多个高频信号线以及多个输出端子的高频开关电路部。输入端子经由多个开关元件中的每一个连接到多个输出端子中的每一个，高频信号线具有相同的长度。多个输出端子布置在高频开关IC芯片的外周的表面上。输入端子布置在高频开关IC电路部分中心的高频开关IC芯片的表面上。

7. 发明申请

US20060082408A1 Semiconductor switching circuit 失效
公开(公告)号：US20060082408A1
公开(公告)日：2006-04-20
申请号：US11142455
申请日：2005-06-02
申请人： Toshiki Seshita , Yoshitomo Sagae
发明人： Toshiki Seshita , Yoshitomo Sagae
IPC分类号： H03K17/687
CPC分类号： H03K17/6871 , H03K17/693
摘要： According to the present invention, there is provided a semiconductor switching circuit having: a common terminal; first, second, and third terminals; first, second, and third ground terminals; first, second, and third control terminals; a first through FET having a source and drain connected in series between the common terminal and first terminal, and a gate connected to the first control terminal via a first resistor; a second through FET having a source and drain connected in series between the common terminal and second terminal, and a gate connected to the second control terminal via a second resistor; a third through FET having a source and drain connected in series between the common terminal and third terminal, and a gate connected to the third control terminal via a third resistor; 11th and 12th shunt FETs each having a source and drain connected in parallel between the first terminal and first ground terminal; 21st and 22nd shunt FETs each having a source and drain connected in parallel between the second terminal and second ground terminal; and 31st and 32nd shunt FETs each having a source and drain connected in parallel between the third terminal and third ground terminal, wherein gates of the 11th and 22nd shunt FETs are connected to the third control terminal via 11th and 22nd resistors, respectively, gates of the 21st and 31st shunt FETs are connected to the first control terminal via 21st and 31st resistors, respectively, gates of the 12th and 32nd shunt FETs are connected to the second control terminal via 12th and 32nd resistors, respectively, and when a first electric potential is supplied only to a Jth (J is a natural number of 1 to 3) control terminal, and a second electric potential lower than the first electric potential is supplied to the rest of said control terminals, the common terminal and a Jth terminal are electrically connected, and the first to third terminals except for said Jth terminal and said common terminal are electrically disconnected.

8. 发明申请

US20050093026A1 Semiconductor device, communication device, and semiconductor device inspecting method 失效
标题翻译：半导体器件，通信器件和半导体器件检查方法
公开(公告)号：US20050093026A1
公开(公告)日：2005-05-05
申请号：US10942849
申请日：2004-09-17
申请人： Yoshitomo Sagae , Toshiki Seshita
发明人： Yoshitomo Sagae , Toshiki Seshita
IPC分类号： H01P1/15 , H03K17/693 , H01L29/745
CPC分类号： H01P1/15 , H03K17/693 , Y10T29/49004
摘要： A semiconductor device comprises a semiconductor switching element having a first electrode, a second electrode and a third electrode, and permitting a high-frequency signal to pass through between the first electrode and the second electrode, depending upon the potential of the third electrode, bias voltages at the first and second electrodes being substantially equal; and an inductor element and a capacitor element which are connected in parallel with respect to the semiconductor switching element at the first and second electrodes and are connected in series to each other.
摘要翻译：半导体器件包括具有第一电极，第二电极和第三电极的半导体开关元件，并且根据第三电极的电位，允许高频信号在第一电极和第二电极之间通过，偏置第一和第二电极处的电压基本相等; 以及电感器元件和电容器元件，其在第一和第二电极处相对于半导体开关元件并联连接并且彼此串联连接。

9. 发明申请

US20050239415A1 High-frequency switch circuit and high-frequency transmitting/receiving apparatus 审中-公开
标题翻译：高频开关电路和高频发射/接收装置
公开(公告)号：US20050239415A1
公开(公告)日：2005-10-27
申请号：US10883697
申请日：2004-07-06
申请人： Yoshitomo Sagae , Toshiki Seshita
发明人： Yoshitomo Sagae , Toshiki Seshita
IPC分类号： H03K17/00 , H01P3/00 , H01P9/00 , H03K17/693 , H04B1/38 , H04B1/44 , H04B1/48
CPC分类号： H04B1/48
摘要： A high-frequency switch circuit includes a first terminal which receives a transmission signal, a first FET which makes a path of the transmission signal conductive or cut off, a second terminal which receives a control signal that is inactive in a transmitting mode and is active in a receiving mode, a ground terminal which is grounded via a first capacitor, and a second FET which has a drain electrode, a source electrode and a gate electrode, the drain or source electrode being connected to the ground terminal, the source or drain electrode being connected to first terminal, and the gate electrode being connected to the second terminal, and which has a greater off-capacitance for unit gate width than the first FET.
摘要翻译：高频开关电路包括：接收发送信号的第一端子，使发送信号的路径导通或切断的第一FET;接收在发送模式中不活动且处于活动状态的控制信号的第二端子在接收模式中，经由第一电容器接地的接地端子和具有漏电极，源电极和栅电极的第二FET，所述漏极或源电极连接到接地端子，所述源极或漏极电极连接到第一端子，并且栅电极连接到第二端子，并且具有比第一FET单位栅极宽度更大的去电容。

10. 发明申请

US20050190691A1 High-frequency switch apparatus 审中-公开
标题翻译：高频开关装置
公开(公告)号：US20050190691A1
公开(公告)日：2005-09-01
申请号：US10845111
申请日：2004-05-14
申请人： Toshiki Seshita , Yoshitomo Sagae
发明人： Toshiki Seshita , Yoshitomo Sagae
IPC分类号： H03K17/693 , H04L12/26
CPC分类号： H03K17/693
摘要： A high-frequency switch apparatus includes a switch circuit, a terminal and a logical inversion circuit. The switch circuit includes a first FET which has a first threshold voltage and makes a path of a transmission signal conductive or cut off and a second FET which makes a path of a reception signal conductive or cut off. It switches between transmission and reception modes. The terminal is connected to the second FET and receives a control signal which switches between the transmission and reception modes. The logical inversion circuit includes third and fourth FETs having a threshold voltage equal to the first threshold voltage and having source electrodes connected to each other. The logical inversion circuit outputs a first voltage equal to a high level of the control signal to a gate electrode of the first FET in the transmission mode.
摘要翻译：高频开关装置包括开关电路，端子和逻辑反相电路。开关电路包括具有第一阈值电压并使传输信号的路径导通或切断的第一FET和使接收信号的路径导通或切断的第二FET。它在发送和接收模式之间切换。端子连接到第二FET并接收在发送和接收模式之间切换的控制信号。逻辑反转电路包括具有等于第一阈值电压的阈值电压并具有彼此连接的源电极的第三和第四FET。逻辑反相电路在传输模式中将等于高电平的控制信号的第一电压输出到第一FET的栅电极。

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