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1. 发明授权

US07419882B2 Alignment mark and alignment method for the fabrication of trench-capacitor dram devices 有权
标题翻译：用于制造沟槽电容器的对准标记和对准方法
公开(公告)号：US07419882B2
公开(公告)日：2008-09-02
申请号：US11160683
申请日：2005-07-05
申请人： Yuan-Hsun Wu , An-Hsiung Liu , Chiang-Lin Shih , Pei-Ing Lee , Hui-Min Mao , Lin-Chin Su
发明人： Yuan-Hsun Wu , An-Hsiung Liu , Chiang-Lin Shih , Pei-Ing Lee , Hui-Min Mao , Lin-Chin Su
IPC分类号： H01L21/20
CPC分类号： G03F9/7084 , G03F7/70633 , G03F9/708 , H01L23/544 , H01L27/1087 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A small-size (w
摘要翻译：提出了与“k1工艺”结合的小尺寸（w <0.5微米）对准标记，其特别适用于需要高精度AA-DT对准的沟槽电容器DRAM器件的制造。利用“k1工艺”来蚀刻散布在对准标记沟槽中的多晶硅，并且在AA图案转印之前刷新沟槽轮廓，从而提高晶片对准精度和精度。

2. 发明授权

US07205075B2 Method of forming a vertical memory device with a rectangular trench 有权
标题翻译：形成具有矩形沟槽的垂直存储器件的方法
公开(公告)号：US07205075B2
公开(公告)日：2007-04-17
申请号：US10448675
申请日：2003-05-29
申请人： Yu-Sheng Shu , Yuan-Hsun Wu , Chung-Yuan Lee , Shian-Jyh Lin
发明人： Yu-Sheng Shu , Yuan-Hsun Wu , Chung-Yuan Lee , Shian-Jyh Lin
IPC分类号： G03F1/00
CPC分类号： H01L27/1087 , H01L21/3083 , H01L27/0207 , H01L27/10864
摘要： A method of forming a vertical memory device with a rectangular trench. First, a substrate covered by a photoresist layer is provided. Next, the photoresist layer is defined by a mask to form a rectangular opening, wherein the mask has two rectangular transparent patterns arranged with a predetermined interval. Next, the substrate is etched using the defined photoresist layer as a mask to form a single rectangular trench and the photoresist layer is then removed. Finally, a trench capacitor and a vertical transistor are successively formed in the rectangular trench to finish the vertical memory device.
摘要翻译：一种形成具有矩形沟槽的垂直存储器件的方法。首先，提供由光致抗蚀剂层覆盖的基板。接下来，通过掩模限定光致抗蚀剂层以形成矩形开口，其中掩模具有以预定间隔布置的两个矩形透明图案。接下来，使用限定的光致抗蚀剂层作为掩模来蚀刻基板以形成单个矩形沟槽，然后除去光致抗蚀剂层。最后，在矩形沟槽中依次形成沟槽电容器和垂直晶体管，以完成垂直存储器件。

3. 发明授权

US07165233B2 Test ket layout for precisely monitoring 3-foil lens aberration effects 有权
标题翻译：用于精确监测3箔透镜像差效应的测试灯布局
公开(公告)号：US07165233B2
公开(公告)日：2007-01-16
申请号：US10709075
申请日：2004-04-12
申请人： Yuan-Hsun Wu
发明人： Yuan-Hsun Wu
IPC分类号： G06F17/50 , G01B9/00 , G03C5/00 , H01L21/8242
CPC分类号： G03F7/706 , G03F1/44
摘要： An H-shaped test key layout for exclusively monitoring 3-foil lens aberration effects during the fabrication of deep-trench capacitor memory devices is disclosed. The COMA lens aberration effect that used to occur along with the 3-foil lens aberration effect is now eliminated by this test key layout.
摘要翻译：公开了一种用于在制造深沟槽电容器存储器件期间专门监测3箔透镜像差效应的H形测试键布局。该测试键布局现在消除了与3箔透镜像差效应一起发生的COMA透镜像差效应。

4. 发明授权

US06977715B2 Method for optimizing NILS of exposed lines 有权
标题翻译：优化裸露线的NILS的方法
公开(公告)号：US06977715B2
公开(公告)日：2005-12-20
申请号：US10709651
申请日：2004-05-19
申请人： Yuan-Hsun Wu
发明人： Yuan-Hsun Wu
IPC分类号： G03B27/32 , G03B27/42 , G03F1/14
CPC分类号： G03F1/36
摘要： A method for optimizing NILS of exposed lines includes providing a photomask layout which has a first straight line and a second straight line parallel with the first straight line and is applied to a Quasar 90 illumination, and adding a first assist pattern between the first and second straight lines, wherein the first assist pattern has a plurality of geometric patterns with similar size arranging as a line parallel with the first straight line.
摘要翻译：一种用于优化曝光线的NILS的方法包括提供光掩模布局，其具有与第一直线平行的第一直线和第二直线，并被应用于星形90照明，并且在第一与第二直线之间增加第一辅助图案直线，其中第一辅助图案具有排列成与第一直线平行的直线相同尺寸的多个几何图案。

5. 发明申请

US20090155699A1 PHASE-SHIFT MASK AND METHOD FOR FORMING A PATTERN 有权
标题翻译：相位移屏蔽和形成图案的方法
公开(公告)号：US20090155699A1
公开(公告)日：2009-06-18
申请号：US12128617
申请日：2008-05-29
申请人： Kuo-Kuei Fu , Yuan-Hsun Wu , Ya-Chih Wang
发明人： Kuo-Kuei Fu , Yuan-Hsun Wu , Ya-Chih Wang
IPC分类号： G03F1/14 , G03F7/20
CPC分类号： G03F1/34 , G03F1/28 , G03F7/2022
摘要： A phase-shift mask for forming a pattern includes a glass substrate and a pattern, a first phase-shift region, a second phase-shift region and a third phase-shift region on the glass substrate. The first phase-shift region and the second phase-shift region are alternately arranged and the third phase-shift regions are formed at the terminal ends of the first phase-shift region.
摘要翻译：用于形成图案的相移掩模包括在玻璃基板上的玻璃基板和图案，第一相移区域，第二相移区域和第三相移区域。交替布置第一相移区域和第二相移区域，并且在第一相移区域的末端形成第三相移区域。

6. 发明授权

US06858355B2 Mask and method for defining a guard ring pattern 有权
标题翻译：用于定义保护环模式的掩模和方法
公开(公告)号：US06858355B2
公开(公告)日：2005-02-22
申请号：US10319076
申请日：2002-12-13
申请人： Hsien-Jung Wang , Yuan-Hsun Wu
发明人： Hsien-Jung Wang , Yuan-Hsun Wu
IPC分类号： G03F1/00 , G03F1/36 , G03F9/00 , G03C5/00
CPC分类号： G03F1/36
摘要： A mask for defining a guard ring pattern. The mask includes a transparent substrate, a light-shielding layer, and at least one pair of assisted line patterns. The light-shielding layer is disposed on the transparent substrate and has a rectangular ring pattern composed of a plurality of opening patterns to define the guard ring pattern. The pair of assisted line patterns is parallelized by a predetermined interval on both sides of at least one section of the rectangular ring and have a predetermined width. Moreover, a method for defining a guard ring pattern is disclosed. First, a semiconductor substrate covered by an energy sensitive layer is provided. Next, photolithography is performed on the energy sensitive layer using the mask to transfer the guard ring pattern inside.
摘要翻译：用于定义保护环图案的掩码。掩模包括透明基板，遮光层和至少一对辅助线图案。遮光层设置在透明基板上，并且具有由多个开口图案组成的矩形环形图案，以限定保护环图案。一对辅助线图案在矩形环的至少一个部分的两侧上以预定的间隔平行化并且具有预定的宽度。此外，公开了一种用于定义保护环图案的方法。首先，提供被能量敏感层覆盖的半导体衬底。接下来，使用掩模对能量敏感层进行光刻，以将保护环图案转印到内部。

7. 发明授权

US06699800B2 Pattern design method for lithography C/H process 有权
标题翻译：光刻C / H工艺图案设计方法
公开(公告)号：US06699800B2
公开(公告)日：2004-03-02
申请号：US10112960
申请日：2002-03-28
申请人： Yuan-Hsun Wu
发明人： Yuan-Hsun Wu
IPC分类号： H01L2100
CPC分类号： G03F1/36 , G03F7/70433
摘要： An assist pattern design method for lithography C/H process that includes the following steps: determining the exposure wavelength of a lithography machine light source; determining a minimum resolution line width by the sigma, process integration parameter and numerical aperture of the lithography machine; recovering the minimum line width on a mask according to the miniature scale of the determined minimum resolution line width; and using a line pattern smaller than the recovered minimum line width to connect multiply C/H patterns on the mask.
摘要翻译：一种用于光刻C / H工艺的辅助图案设计方法，包括以下步骤：确定光刻机光源的曝光波长; 通过光刻机的西格玛，工艺积分参数和数值孔径确定最小分辨率线宽; 根据确定的最小分辨率线宽的微缩尺度恢复掩模上的最小线宽; 并且使用小于恢复的最小线宽的线图案来连接掩模上的多个C / H图案。

8. 发明授权

US07012763B2 Aperture plate for lithography systems 有权
标题翻译：光刻系统光圈板
公开(公告)号：US07012763B2
公开(公告)日：2006-03-14
申请号：US10709311
申请日：2004-04-28
申请人： Yuan-Hsun Wu
发明人： Yuan-Hsun Wu
IPC分类号： G02B27/00 , G03B27/72
CPC分类号： G03F7/70091 , G03F7/701
摘要： An aperture plate for lithography systems capable of improving NILS. The aperture plate includes a light-intercepting region and a light-transmitting region. The light-intercepting region has a reference center point. A horizontal reference line and a vertical reference line are defined on the light-intercepting region and intersect the reference center point. The light-transmitting region includes four pole apertures defining a central area. Two of the pole apertures are positioned on the horizontal reference line, and the other pole apertures are positioned on the vertical reference line. The light-transmitting region further includes at least a symmetric pattern aperture positioned in the central area, wherein the symmetric pattern aperture has a symmetric center overlapping the reference center point.
摘要翻译：用于能够改善NILS的光刻系统的孔板。孔板包括遮光区域和透光区域。受光区域具有参考中心点。在受光区域上定义水平参考线和垂直参考线，并与参考中心点相交。光透射区域包括限定中心区域的四个极孔。两个极孔位于水平参考线上，另一个极孔位于垂直参考线上。光透射区域还包括位于中心区域中的至少一个对称图案孔，其中对称图案孔具有与参考中心点重叠的对称中心。

9. 发明授权

US06929902B2 Method of preventing repeated collapse in a reworked photoresist layer 有权
标题翻译：防止再加工光致抗蚀剂层中重复塌陷的方法
公开(公告)号：US06929902B2
公开(公告)日：2005-08-16
申请号：US10370441
申请日：2003-02-20
申请人： Yuan-Hsun Wu , Teng-Yen Huang , Wen-Bin Wu , Yi-Nan Chen
发明人： Yuan-Hsun Wu , Teng-Yen Huang , Wen-Bin Wu , Yi-Nan Chen
IPC分类号： G03F7/42 , H01L21/027 , H01L21/311 , G03F7/36
CPC分类号： G03F7/427 , H01L21/0276 , H01L21/31138
摘要： A method of preventing repeated collapse in a reworked photoresist layer. First, oxygen-containing plasma is applied to remove a collapsed photoresist. Because the plasma containing oxygen reacts with a bottom anti-reflect layer comprising SiOxNy, some acids are produced on the bottom anti-reflect layer, resulting in undercutting in a subsequently reworked photoresist. Next, an alkaline solution treatment is performed on the anti-reflect layer after the collapsed photoresist layer is removed. Finally, the reworked photoresist with is formed on the anti-reflect layer, without undercutting.
摘要翻译：防止再加工的光致抗蚀剂层中的重复塌陷的方法。首先，施加含氧等离子体以除去塌陷的光致抗蚀剂。因为含有氧的等离子体与包含SiO x N y Y y的底部防反射层反应，所以在底部防反射层上产生一些酸，导致在随后再加工光致抗蚀剂。接下来，在去除塌陷的光致抗蚀剂层之后，在抗反射层上进行碱性溶液处理。最后，在反射层上形成返工光致抗蚀剂，而没有底切。

10. 发明授权

US06847445B2 Method for estimating repair accuracy of a mask shop 有权
标题翻译：评估面膜店维修精度的方法
公开(公告)号：US06847445B2
公开(公告)日：2005-01-25
申请号：US10035547
申请日：2001-11-06
申请人： Yuan-Hsun Wu
发明人： Yuan-Hsun Wu
IPC分类号： G01N21/956 , G01N21/00 , G03F9/00
CPC分类号： G01N21/95684
摘要： The present invention provides a method for estimating repair accuracy of a mask shop. The method comprises the steps of providing a mask having a light-shielding layer with a pattern of a plurality of lines, each of which has a defect, using the mask shop to repair the defects. Contaminated areas are formed in the vicinity of areas where the defects are repaired, measuring first light intensities of the contaminated areas, and second and third light intensities of two sides of the contaminated areas, and calculating ratios of means of the second and third light intensities to the first light intensities to estimate the repair accuracy.
摘要翻译：本发明提供了一种用于估计掩模车间的修理精度的方法。该方法包括以下步骤：使用掩模车间修复缺陷，提供具有多条线的图案的遮光层的掩模，每个线具有缺陷。污染区域形成在缺陷修复的区域附近，测量污染区域的第一光强度，污染区域两侧的第二和第三光强度，以及计算第二和第三光强度的平均值以第一光强估计修复精度。

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