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1. 发明申请

US20110140075A1 LIGHT-EMITTING DEVICE INCLUDING QUANTUM DOTS 有权
标题翻译：发光装置，包括量子点
公开(公告)号：US20110140075A1
公开(公告)日：2011-06-16
申请号：US12896856
申请日：2010-10-02
申请人： Zhaoqun ZHOU , Peter T. Kazlas , Mead Misic , Zoran Popovic , John Spencer Morris
发明人： Zhaoqun ZHOU , Peter T. Kazlas , Mead Misic , Zoran Popovic , John Spencer Morris
IPC分类号： H01L33/04 , B82Y99/00
CPC分类号： H01L51/5012 , B82Y20/00 , H01L51/5048 , H01L51/5088 , H01L2251/552
摘要： A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injection electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting holes, a layer comprising a hole injection material, and an anode. In certain embodiments, the hole injection material can be a p-type doped hole transport material. In certain preferred embodiments, quantum dots comprise semiconductor nanocrystals. In another aspect of the invention, there is provided a light emitting device wherein the device has an initial turn-on voltage that is not greater than 1240/λ, wherein λ represents the wavelength (nm) of light emitted by the emissive layer. Other light emitting devices and a method are disclosed.
摘要翻译：公开了包括包含量子点的发射材料的发光器件。在一个实施例中，该器件包括阴极，包含能够传输和注入包含无机材料的电子的材料的层，包含量子点的发射层，包含能够传输空穴的材料的层，包括空穴注入材料，和阳极。在某些实施例中，空穴注入材料可以是p型掺杂的空穴传输材料。在某些优选实施例中，量子点包括半导体纳米晶体。在本发明的另一方面，提供了一种发光器件，其中器件具有不大于1240 /λ的初始导通电压，其中λ表示由发射层发射的光的波长（nm）。公开了其它发光器件和方法。

2. 发明授权

US09793505B2 Light-emitting device including quantum dots 有权
公开(公告)号：US09793505B2
公开(公告)日：2017-10-17
申请号：US12896856
申请日：2010-10-02
申请人： Zhaoqun Zhou , Peter T. Kazlas , Mead Misic , Zoran Popovic , John Spencer Morris
发明人： Zhaoqun Zhou , Peter T. Kazlas , Mead Misic , Zoran Popovic , John Spencer Morris
IPC分类号： H01L33/04 , B82Y99/00 , H01L51/50 , B82Y20/00
CPC分类号： H01L51/5012 , B82Y20/00 , H01L51/5048 , H01L51/5088 , H01L2251/552
摘要： A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injection electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting holes, a layer comprising a hole injection material, and an anode. In certain embodiments, the hole injection material can be a p-type doped hole transport material. In certain preferred embodiments, quantum dots comprise semiconductor nanocrystals. In another aspect of the invention, there is provided a light emitting device wherein the device has an initial turn-on voltage that is not greater than 1240/λ, wherein λ represents the wavelength (nm) of light emitted by the emissive layer. Other light emitting devices and a method are disclosed.

3. 发明授权

US09496141B2 Device including quantum dots 有权
标题翻译：器件包括量子点
公开(公告)号：US09496141B2
公开(公告)日：2016-11-15
申请号：US13468199
申请日：2012-05-10
申请人： Peter T. Kazlas , John Spencer Morris , Robert J. Nick , Zoran Popovic , Matthew Stevenson , Jonathan S. Steckel
发明人： Peter T. Kazlas , John Spencer Morris , Robert J. Nick , Zoran Popovic , Matthew Stevenson , Jonathan S. Steckel
IPC分类号： H01L29/06 , H01L33/00 , H01L21/02 , B82Y40/00 , B82Y20/00 , B82Y10/00 , C09K11/02 , C09K11/56 , C09K11/88 , H01L29/12 , H01L33/06 , H01L33/40
CPC分类号： H01L33/06 , B82Y10/00 , B82Y20/00 , B82Y40/00 , C09K11/02 , C09K11/565 , C09K11/883 , H01L21/0237 , H01L21/02521 , H01L21/02557 , H01L21/0256 , H01L21/02601 , H01L21/02664 , H01L29/127 , H01L33/005 , H01L33/40
摘要： A method of making a device comprises forming a layer comprising quantum dots over a substrate including a first electrode, fixing the layer comprising quantum dots formed over the substrate, and exposing at least a portion of, and preferably all, exposed surfaces of the fixed layer comprising quantum dots to small molecules. Also disclosed is a method of making a device, the method comprising forming a layer comprising quantum dots over a substrate including a first electrode, exposing the layer comprising quantum dots to small molecules and light flux. A method of making a film including a layer comprising quantum dots, and a method of preparing a device component including a layer comprising quantum dots are also disclosed. Devices, device components, and films are also disclosed.
摘要翻译：一种制造器件的方法包括在包括第一电极的衬底上形成包括量子点的层，将包含形成在衬底上的量子点的层固定，以及暴露固定层的至少一部分暴露表面包括量子点到小分子。还公开了一种制造器件的方法，所述方法包括在包括第一电极的衬底上形成包括量子点的层，将包含量子点的层暴露于小分子和光通量。还公开了制造包括包含量子点的层的膜的方法，以及制备包括包括量子点的层的器件部件的方法。还公开了器件，器件部件和膜。

4. 发明申请

US20100051901A1 Light emitting devices and displays with improved performance 审中-公开
标题翻译：具有改进性能的发光器件和显示器
公开(公告)号：US20100051901A1
公开(公告)日：2010-03-04
申请号：US12454705
申请日：2009-05-21
申请人： Peter T. Kazlas , Marshall Cox , Seth Coe-Sullivan , Dorai Ramprasad , Jonathan S. Steckel , Craig Breen , Caroline J. Roush , Mead Misic
发明人： Peter T. Kazlas , Marshall Cox , Seth Coe-Sullivan , Dorai Ramprasad , Jonathan S. Steckel , Craig Breen , Caroline J. Roush , Mead Misic
IPC分类号： H01L33/00
CPC分类号： C09K11/565 , B82Y20/00 , B82Y30/00 , H01L51/5012 , H05B33/14
摘要： Light emitting devices and devices with improved performance are disclosed. In one embodiment, a light emitting device includes an emissive material disposed between a first electrode, and a second electrode, wherein the emissive material comprises semiconductor nanocrystals capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation, wherein the light emitting device can have a peak external quantum efficiency of at least about 1.0 percent. Also disclosed is a display including at least one light emitting device including an emissive material disposed between a first electrode, and a second electrode, wherein the at least one light emitting device can have a peak external quantum efficiency of at least about 1.0 percent. In another embodiment, a light emitting device includes an emissive material disposed between a first electrode and a second electrode. The emissive material comprises semiconductor nanocrystals capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation. The device further includes a first spacer material disposed between the emissive material and the first electrode. In certain embodiments, the device further includes a first material capable of transporting charge disposed between the emissive material and the first electrode, wherein the first spacer material is disposed between the emissive material and the first electrode. In certain embodiments, for example, light emitting devices can have a maximum peak emission in a range from about 380 nm to about 500 nm. In certain embodiments, the light emitting device can have a maximum peak emission peak in the range from about 450 nm to about 490 nm. Displays including light emitting devices are also disclosed.
摘要翻译：公开了具有改进性能的发光器件和器件。在一个实施例中，发光器件包括设置在第一电极和第二电极之间的发光材料，其中发射材料包含能够发射包括在激发的光谱的蓝色区域中的最大峰值发射的光的半导体纳米晶体，其中发光器件可以具有至少约1.0％的峰值外部量子效率。还公开了一种显示器，其包括至少一个包括设置在第一电极和第二电极之间的发光材料的发光器件，其中所述至少一个发光器件可以具有至少约1.0％的峰值外部量子效率。在另一个实施例中，发光器件包括设置在第一电极和第二电极之间的发光材料。发射材料包括能够发射光的半导体纳米晶体，其包括在激发时在光谱的蓝色区域中的最大峰值发射。该装置还包括设置在发光材料和第一电极之间的第一间隔物材料。在某些实施例中，该装置还包括能够传输设置在发射材料和第一电极之间的电荷的第一材料，其中第一间隔物材料设置在发光材料和第一电极之间。在某些实施例中，例如，发光器件可以具有在约380nm至约500nm范围内的最大峰值发射。在某些实施方案中，发光器件可具有在约450nm至约490nm范围内的最大峰值发射峰值。还公开了包括发光器件的显示器。

5. 发明授权

US09525148B2 Device including quantum dots 有权
标题翻译：器件包括量子点
公开(公告)号：US09525148B2
公开(公告)日：2016-12-20
申请号：US13441394
申请日：2012-04-06
申请人： Peter T. Kazlas , Zhaoqun Zhou , Yuhua Niu , Sang-Jin Kim , Benjamin S. Mashford
发明人： Peter T. Kazlas , Zhaoqun Zhou , Yuhua Niu , Sang-Jin Kim , Benjamin S. Mashford
IPC分类号： H01L29/08 , H01L51/00 , H01L51/50 , B82Y20/00
CPC分类号： H01L51/502 , B82Y20/00 , H01L51/50 , H01L51/5004 , H01L51/5048 , H01L51/5056 , H01L51/5072 , H01L51/5088 , H01L51/5092 , H01L51/5221 , H01L51/56 , H01L2251/301 , H01L2251/303 , H01L2251/5369 , H01L2251/552 , H01L2251/556
摘要： A device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a first electrode and a second electrode, a layer comprising quantum dots disposed between the first electrode and the second electrodes, and a first interfacial layer disposed at the interface between a surface of the layer comprising quantum dots and a first layer in the device. In certain embodiments, a second interfacial layer is optionally further disposed on the surface of the layer comprising quantum dots opposite to the first interfacial layer. In certain embodiments, a device comprises a light-emitting device. Other light emitting devices and methods are disclosed.
摘要翻译：公开了一种包括包含量子点的发射材料的装置。在一个实施例中，该装置包括第一电极和第二电极，包括设置在第一电极和第二电极之间的量子点的层以及设置在包括量子点的层的表面之间的界面处的第一界面层设备中的第一层。在某些实施方案中，第二界面层任选进一步设置在包含与第一界面层相对的量子点的层的表面上。在某些实施例中，装置包括发光装置。公开了其它发光器件和方法。

6. 发明授权

US09520573B2 Device including quantum dots and method for making same 有权
标题翻译：包括量子点的装置及其制造方法
公开(公告)号：US09520573B2
公开(公告)日：2016-12-13
申请号：US13422683
申请日：2012-03-16
申请人： Zhaoqun Zhou , Peter T. Kazlas , Benjamin S. Mashford
发明人： Zhaoqun Zhou , Peter T. Kazlas , Benjamin S. Mashford
IPC分类号： H01L51/42 , H01L51/50 , C09K11/02 , C09K11/56 , C09K11/88 , H05B33/14 , B82Y30/00 , H01L33/06
CPC分类号： H01L51/502 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C09K11/025 , C09K11/565 , C09K11/883 , H01L33/06 , H01L51/005 , H01L51/0058 , H01L51/0059 , H01L51/006 , H01L51/4233 , H01L51/5056 , H01L51/5088 , H01L2251/5369 , H05B33/14 , Y02E10/549 , Y10S977/774 , Y10S977/892 , Y10S977/896 , Y10S977/95
摘要： A device comprises an anode; a cathode; a layer therebetween comprising quantum dots; and a first layer comprising a material capable of transporting and injecting electrons in, or forming, contact with the cathode, the material comprising nanoparticles of an inorganic semiconductor material. In one embodiment of the device, quantum dots comprise a core comprising a first semiconductor material that confines holes better than electrons in the core and an outer shell comprising a second semiconductor material that is permeable to electrons. In another embodiment of the device, the nanoparticles comprise n-doped inorganic semiconductor material, and a second layer comprising a material capable of transporting electrons is disposed between the layer including quantum dots and the first layer, wherein the second layer has a lower electron conductivity than the first. In a further embodiment of the device, the first layer is UV treated. A method and other embodiments are also disclosed.
摘要翻译：一种装置包括阳极; 阴极其间包括量子点的层; 以及第一层，其包括能够传输和注入电子或与阴极形成接触的材料，所述材料包含无机半导体材料的纳米颗粒。在该器件的一个实施例中，量子点包括一个芯，该芯包含一个第一半导体材料，该第一半导体材料限制了比芯中的电子更好的孔，以及一个外壳，其包含一个可渗透电子的第二半导体材料。在该器件的另一实施例中，纳米颗粒包括n掺杂的无机半导体材料，并且包括能够传输电子的材料的第二层设置在包括量子点和第一层的层之间，其中第二层具有较低的电子传导性比第一个。在装置的另一实施例中，第一层被UV处理。还公开了一种方法和其他实施例。

7. 发明申请

US20100265239A1 PROCESSES FOR FORMING BACKPLANES FOR ELECTRO-OPTIC DISPLAYS 有权
标题翻译：用于形成电光显示器的背板的方法
公开(公告)号：US20100265239A1
公开(公告)日：2010-10-21
申请号：US12825991
申请日：2010-06-29
申请人： Karl R. Amundson , Guy M. Danner , Gregg M. Duthaler , Peter T. Kazlas , Yu Chen , Kevin L. Denis , Nathan R. Kane , Andrew P. Ritenour
发明人： Karl R. Amundson , Guy M. Danner , Gregg M. Duthaler , Peter T. Kazlas , Yu Chen , Kevin L. Denis , Nathan R. Kane , Andrew P. Ritenour
IPC分类号： G06F3/038 , H01J9/24 , H01L21/20
CPC分类号： H01L27/1266 , B60C23/04 , G02F1/133305 , G02F1/1362 , G02F1/167 , G02F2001/13613 , H01L27/1214 , H01L27/1288 , H01L29/66765 , H01L29/78603
摘要： A non-linear element is formed on a flexible substrate by securing the substrate to a rigid carrier, forming the non-linear element, and then separating the flexible substrate from the carrier. The process allows flexible substrates to be processed in a conventional fab intended to process rigid substrates. In a second method, a transistor is formed on a insulating substrate by forming gate electrodes, depositing a dielectric layer, a semiconductor layer and a conductive layer, patterning the conductive layer to form source, drain and pixel electrodes, covering the channel region of the resultant transistor with an etch-resistant material and etching using the etch-resistant material and the conductive layer as a mask, the etching extending substantially through the semiconductor layer between adjacent transistors. The invention also provides a process for forming a diode on a substrate by depositing on the substrate a first conductive layer, and a second patterned conductive layer and a patterned dielectric layer over parts of the first conductive layer, and etching the first conductive layer using the second conductive layer and dielectric layer as an etch mask. Finally, the invention provides a process for driving an impulse-sensitive electro-optic display.
摘要翻译：通过将基板固定到刚性载体上，形成非线性元件，然后将柔性基板与载体分离，在柔性基板上形成非线性元件。该方法允许柔性基底在旨在处理刚性基底的常规晶圆中进行加工。在第二种方法中，通过形成栅电极，沉积介电层，半导体层和导电层，在绝缘基板上形成晶体管，图案化导电层以形成源极，漏极和像素电极，覆盖该沟道区具有耐蚀刻材料的合成晶体管和使用耐蚀刻材料和导电层作为掩模的蚀刻，蚀刻基本上延伸通过相邻晶体管之间的半导体层。本发明还提供了一种通过在衬底上沉积第一导电层以及第二图案化导电层和在第一导电层的部分上的图案化电介质层在衬底上形成二极管的工艺，并且使用第二导电层和介电层作为蚀刻掩模。最后，本发明提供一种驱动脉冲敏感电光显示器的方法。

8. 发明授权

US07223672B2 Processes for forming backplanes for electro-optic displays 有权
标题翻译：用于形成电光显示器背板的工艺
公开(公告)号：US07223672B2
公开(公告)日：2007-05-29
申请号：US10249624
申请日：2003-04-24
申请人： Peter T. Kazlas , Nathan R. Kane , Andrew P. Ritenour
发明人： Peter T. Kazlas , Nathan R. Kane , Andrew P. Ritenour
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , B60C23/04 , G02F1/133305 , G02F1/1362 , G02F1/167 , G02F2001/13613 , H01L27/1214 , H01L27/1288 , H01L29/66765 , H01L29/78603
摘要： A non-linear element is formed on a flexible substrate by securing the substrate to a rigid carrier, forming the non-linear element, and then separating the flexible substrate from the carrier. The process allows flexible substrates to be processed in a conventional fab intended to process rigid substrates. In a second method, a transistor is formed on a insulating substrate by forming gate electrodes, depositing a dielectric layer, a semiconductor layer and a conductive layer, patterning the conductive layer to form source, drain and pixel electrodes, covering the channel region of the resultant transistor with an etch-resistant material and etching using the etch-resistant material and the conductive layer as a mask, the etching extending substantially through the semiconductor layer between adjacent transistors. The invention also provides a process for forming a diode on a substrate by depositing on the substrate a first conductive layer, and a second patterned conductive layer and a patterned dielectric layer over parts of the first conductive layer, and etching the first conductive layer using the second conductive layer and dielectric layer as an etch mask. Finally, the invention provides a process for driving an impulse-sensitive electro-optic display.
摘要翻译：通过将基板固定到刚性载体上，形成非线性元件，然后将柔性基板与载体分离，在柔性基板上形成非线性元件。该方法允许柔性基底在旨在处理刚性基底的常规晶圆中进行加工。在第二种方法中，通过形成栅电极，沉积介电层，半导体层和导电层，在绝缘基板上形成晶体管，图案化导电层以形成源极，漏极和像素电极，覆盖该沟道区具有耐蚀刻材料的合成晶体管和使用耐蚀刻材料和导电层作为掩模的蚀刻，蚀刻基本上延伸通过相邻晶体管之间的半导体层。本发明还提供了一种通过在衬底上沉积第一导电层以及第二图案化导电层和在第一导电层的部分上的图案化电介质层在衬底上形成二极管的工艺，并且使用第二导电层和介电层作为蚀刻掩模。最后，本发明提供一种驱动脉冲敏感电光显示器的方法。

9. 发明授权

US07190008B2 Electro-optic displays, and components for use therein 有权
标题翻译：电光显示器及其中使用的部件
公开(公告)号：US07190008B2
公开(公告)日：2007-03-13
申请号：US10904160
申请日：2004-10-27
申请人： Karl R. Amundson , Andrew P. Ritenour , Gregg M. Duthaler , Paul S. Drzaic , Yu Chen , Peter T. Kazlas
发明人： Karl R. Amundson , Andrew P. Ritenour , Gregg M. Duthaler , Paul S. Drzaic , Yu Chen , Peter T. Kazlas
IPC分类号： H01L27/148 , H01L29/768
CPC分类号： G02F1/167 , G02F1/1368 , G02F2001/1672 , H01L21/02104 , H01L21/30604 , H01L21/308 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/124 , H01L27/1259 , H01L27/127 , H01L27/1285 , H01L27/1292 , H01L29/41733 , H01L29/42384 , H01L29/78603 , H01L29/78666 , H01L33/48
摘要： An electro-optic display comprises a substrate (100), non-linear devices (102) disposed substantially in one plane on the substrate (100), pixel electrodes (106) connected to the non-linear devices (102), an electro-optic medium (110) and a common electrode (112) on the opposed side of the electro-optic medium (110) from the pixel electrodes (106). The moduli of the various parts of the display are arranged so that, when the display is curved, the neutral axis or neutral plane lies substantially in the plane of the non-linear devices (102).
摘要翻译：电光显示器包括基板（100），基本上设置在基板（100）上的一个平面中的非线性装置（102），连接到非线性装置（102）的像素电极（106）光学介质（110）和与所述电光介质（110）相对的所述像素电极（106）的公共电极（112）。显示器的各个部件的模量被布置成使得当显示器弯曲时，中性轴线或中性平面基本上位于非线性装置（102）的平面中。

10. 发明授权

US07176880B2 Use of a storage capacitor to enhance the performance of an active matrix driven electronic display 有权
标题翻译：使用存储电容来增强有源矩阵驱动电子显示器的性能
公开(公告)号：US07176880B2
公开(公告)日：2007-02-13
申请号：US10886803
申请日：2004-07-08
申请人： Karl R. Amundson , Paul S. Drzaic , Peter T. Kazlas
发明人： Karl R. Amundson , Paul S. Drzaic , Peter T. Kazlas
IPC分类号： G09G3/34
CPC分类号： G09G3/344 , G02F1/1334 , G02F1/136213 , G02F1/167 , G02F1/172 , G09G2300/0809 , G09G2300/0842 , G09G2310/0262 , G09G2320/0252
摘要： A system and method of use of a storage capacitor to improve the appearance and addressing characteristics of an electronically driven display. The capacitor is formed by the overlap of portions of electrodes used to address different pixels, or by the overlap of an addressing line and a conductor. An insulator layer situated between the capacitor electrodes can be the same insulator layer present in an FET transistor used to address the pixel. Methods of use of capacitors to achieve improved display addressing are disclosed.
摘要翻译：一种使用存储电容器来改善电子显示器的外观和寻址特性的系统和方法。电容器由用于寻址不同像素的电极的部分的重叠，或通过寻址线和导体的重叠形成。位于电容器电极之间的绝缘体层可以是用于解决像素的FET晶体管中存在的相同的绝缘体层。公开了使用电容器实现改进的显示寻址的方法。

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