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1. 发明授权

US09331154B2 High electron mobility transistor 有权
标题翻译：高电子迁移率晶体管
公开(公告)号：US09331154B2
公开(公告)日：2016-05-03
申请号：US14328241
申请日：2014-07-10
申请人： EPISTAR CORPORATION , HUGA OPTOTECH, INC
发明人： Hsien-Chin Chiu , Chien-Kai Tung , Heng-Kuang Lin , Chih-Wei Yang , Hsiang-Chun Wang
IPC分类号： H01L29/66 , H01L29/20 , H01L29/417 , H01L29/423 , H01L29/778
CPC分类号： H01L29/7784 , H01L29/157 , H01L29/2003 , H01L29/205 , H01L29/41758 , H01L29/42316 , H01L29/7787
摘要： A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region, and a plurality of first bridges electrically connecting the plurality of second electrodes. The matrix electrode structure comprises a plurality of first electrodes arranged on the epitaxial stack and a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes. One of the bridges is arranged between two of the second electrodes and crossed over one of the first electrodes.
摘要翻译：高电子迁移率晶体管包括衬底，布置在衬底上方的外延层，并且具有第一区域和围绕第一区域的第二区域，布置在第一区域中的矩阵电极结构以及电连接多个第一区域的多个第一桥的第二电极。矩阵电极结构包括布置在外延堆叠上的多个第一电极和布置在外延堆叠上并与多个第一电极相邻的多个第二电极。其中一个桥被布置在两个第二电极之间并跨过第一电极中的一个。

2. 发明授权

US09157579B2 LED assembly with omnidirectional light field 有权
标题翻译： LED组件采用全向光场
公开(公告)号：US09157579B2
公开(公告)日：2015-10-13
申请号：US14309836
申请日：2014-06-19
申请人： HUGA OPTOTECH INC. , Interlight Optotech Corporation
发明人： Hong-Zhi Liu , Tzu-Chi Cheng
IPC分类号： F21K99/00 , F21V19/00 , H01L25/075 , F21Y101/02 , F21Y103/00 , F21Y111/00 , H01L33/62 , H05K1/11 , H05K3/28 , H05K3/32 , H05K3/34 , H05K3/36
CPC分类号： F21K9/00 , F21K9/232 , F21K9/90 , F21V19/003 , F21Y2103/10 , F21Y2107/00 , F21Y2115/10 , H01L25/0753 , H01L33/62 , H01L2224/32225 , H01L2224/48091 , H01L2224/48137 , H01L2224/73265 , H05K1/117 , H05K3/285 , H05K3/326 , H05K3/3405 , H05K3/366 , H05K2201/09481 , H05K2201/10674 , H01L2924/00014
摘要： Disclosed is an LED assembly having an omnidirectional light field. The LED assembly has a transparent substrate, LED chips, and first and second electrode plates. The transparent substrate comprises first and second surfaces facing to opposite orientations respectively. The transparent substrate has a via hole tunneling therethrough, which is formed with conductive material to provide a conductive via. The LED chips are mounted on the first surface. The first and second electrode plates are formed on the first and second surfaces respectively. The light emitting diode chips and the conductive via are electrically connected in series between the first and second electrode plates.
摘要翻译：公开了具有全向光场的LED组件。 LED组件具有透明基板，LED芯片以及第一和第二电极板。透明基板包括分别面对相反取向的第一表面和第二表面。透明基板具有穿过其中的通孔，其由导电材料形成以提供导电通孔。 LED芯片安装在第一表面上。第一和第二电极板分别形成在第一和第二表面上。发光二极管芯片和导电通孔串联地电连接在第一和第二电极板之间。

3. 发明申请

US20150137179A1 POWER DEVICE 审中-公开
标题翻译：电源设备
公开(公告)号：US20150137179A1
公开(公告)日：2015-05-21
申请号：US14084084
申请日：2013-11-19
申请人： HUGA OPTOTECH INC. , EPISTAR CORPORATION
发明人： Ya-Yu YANG , Heng-Kuang LIN
IPC分类号： H01L29/205 , H01L29/778 , H01L29/20
CPC分类号： H01L29/2003 , H01L29/1075 , H01L29/154 , H01L29/66462 , H01L29/7787
摘要： A power device disclosed herein comprises a substrate, a first semiconductor layer formed on the substrate, a second semiconductor layer formed on the first semiconductor layer and comprising a first element of group III, a third semiconductor layer formed on the second semiconductor layer and a plurality of first interlayers formed in the third semiconductor layer and comprising a second element of III group. The first element of III group and the second element of III group are the same. The second semiconductor layer and the plurality of first interlayers are doped with carbon.
摘要翻译：本文公开的功率器件包括衬底，形成在衬底上的第一半导体层，形成在第一半导体层上的第二半导体层，并且包括第三组的第一元件，形成在第二半导体层上的第三半导体层和多个的第一中间层形成在第三半导体层中并且包括III族的第二元素。 III组的第一个元素和III组的第二个元素是相同的。第二半导体层和多个第一中间层掺杂有碳。

4. 发明授权

US08258531B2 Semiconductor devices 有权
标题翻译：半导体器件
公开(公告)号：US08258531B2
公开(公告)日：2012-09-04
申请号：US12732537
申请日：2010-03-26
申请人： Chih Ching Cheng , Ching Wen Tung
发明人： Chih Ching Cheng , Ching Wen Tung
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/007 , H01L33/16
摘要： A semiconductor device includes a substrate and an epitaxy layer positioned on the substrate. In one embodiment of the present disclosure, the substrate includes an upper surface and a plurality of bumps positioned on the upper surface, and each of the bumps includes a top plane substantially parallel to the upper surface and a plurality of wall surfaces between the top plane and the upper surface. In one embodiment of the present disclosure, the epitaxy layer has the same crystal orientation on the upper surface of the substrate and the wall surfaces of the bumps to reduce defect density and increase protection from electrostatic discharge.
摘要翻译：半导体器件包括衬底和位于衬底上的外延层。在本公开的一个实施例中，基板包括位于上表面上的上表面和多个凸起，并且每个凸块包括基本上平行于上表面的顶平面和顶平面之间的多个壁面和上表面。在本公开的一个实施例中，外延层在基板的上表面和凸块的壁表面上具有相同的晶体取向，以减少缺陷密度并增加对静电放电的保护。

5. 发明授权

US08247822B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08247822B2
公开(公告)日：2012-08-21
申请号：US12856221
申请日：2010-08-13
申请人： Chih Ching Cheng , Tzong Liang Tsai , Shu Hui Lin
发明人： Chih Ching Cheng , Tzong Liang Tsai , Shu Hui Lin
IPC分类号： H01L27/15
CPC分类号： H01L33/22 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting device comprises a substrate, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The substrate includes an upper surface and a plurality of protrusions positioned on the upper surface. Each of the protrusions includes a top surface, a plurality of wall surfaces, and a plurality of inclined surfaces sandwiched between the top surface and the wall surfaces.
摘要翻译：半导体发光器件包括衬底，位于衬底上的第一导电类型半导体层，位于第一导电类型半导体层上的发光结构和位于发光结构上的第二导电型半导体层。基板包括上表面和位于上表面上的多个突起。每个突起包括顶表面，多个壁表面和夹在顶表面和壁表面之间的多个倾斜表面。

6. 发明申请

US20120085989A1 LIGHT-EMITTING SEMICONDUCTOR DEVICE 有权
标题翻译：发光半导体器件
公开(公告)号：US20120085989A1
公开(公告)日：2012-04-12
申请号：US13071511
申请日：2011-03-25
申请人： Shiou-Yi Kuo
发明人： Shiou-Yi Kuo
IPC分类号： H01L33/06 , H01L33/32 , H01L33/46
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/32 , H01L33/405 , H01L33/42
摘要： A semiconductor light-emitting device includes a conductive substrate, a light-emitting structure layer, a metallic reflective layer, a transparent conductive layer, a first patterned dielectric layer, and a second patterned dielectric layer. The light-emitting structure layer, the transparent conductive layer, the metallic reflective layer, and the conductive substrate are sequentially arranged. The first patterned dielectric layer is between the light-emitting structure layer and the transparent conductive layer and includes first structure units separated from one another by a first space. The first portions are located in the first spaces respectively. The second patterned dielectric layer is between the transparent conductive layer and the metallic reflective layer and includes second structure units separated from one another by a second space. The second portions are located in the second spaces respectively. The first and the second portions are not overlapped.
摘要翻译：半导体发光器件包括导电衬底，发光结构层，金属反射层，透明导电层，第一图案化电介质层和第二图案化电介质层。依次排列发光结构层，透明导电层，金属反射层，导电性基板。第一图案化电介质层在发光结构层和透明导电层之间，并且包括通过第一空间彼此分离的第一结构单元。第一部分分别位于第一个空格中。第二图案化电介质层位于透明导电层和金属反射层之间，并且包括通过第二空间彼此分离的第二结构单元。第二部分分别位于第二空间中。第一和第二部分不重叠。

7. 发明申请

US20110284895A1 LIGHT-EMITTING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：发光半导体器件
公开(公告)号：US20110284895A1
公开(公告)日：2011-11-24
申请号：US13084782
申请日：2011-04-12
申请人： Sheng-Hsien Hsu
发明人： Sheng-Hsien Hsu
IPC分类号： H01L33/58
CPC分类号： H01L33/20 , H01L33/007 , H01L33/16
摘要： The present invention provides a light-emitting semiconductor device, which comprises a substrate having a surface formed with a plane and a plurality of protrusions out of the plane. The plane is on a crystalline orientation. The protrusion is provided with an outer surface consisting of a plurality of sidewall surfaces. The sidewall surfaces are substantially not on the crystalline orientation. The protrusion is formed with an outline edge extended from the bottom to the top of the protrusion from a side view. The outline edge comprises at least one turning point. A first conductive type semiconductor layer is above the surface of the substrate, an active layer is above the first conductive type semiconductor layer, and a second conductive type semiconductor layer is above the active layer.
摘要翻译：本发明提供了一种发光半导体器件，其包括具有形成有平面的表面和离开该平面的多个突起的基板。平面处于结晶方向。突起设置有由多个侧壁表面组成的外表面。侧壁表面基本上不在结晶取向上。突起形成有从侧面从突起的底部延伸到顶部的轮廓边缘。轮廓边缘包括至少一个转折点。第一导电型半导体层位于衬底的表面之上，有源层位于第一导电型半导体层的上方，第二导电型半导体层位于有源层之上。

8. 发明授权

US07999273B2 Light emitting device having pillar structure with roughness surface and the forming method thereof 有权
标题翻译：具有粗糙表面的柱结构的发光装置及其形成方法
公开(公告)号：US07999273B2
公开(公告)日：2011-08-16
申请号：US12414753
申请日：2009-03-31
申请人： Tzong-Liang Tsai , Lin-Chieh Kao
发明人： Tzong-Liang Tsai , Lin-Chieh Kao
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/42
摘要： A light emitting device is provided which includes a substrate, a first semiconductor layer having a first region and a second region on the substrate; ac active layer is formed on the first region of the first semiconductor layer; a second semiconductor layer is formed on the active surface layer and the portion surface of the second semiconductor layer is a rough surface; a plurality of pillar structures with a hollow structure, and both of the outer surface and inner surface of the pillar structures are rough surface; a transparent conductive layer is formed to cover the plurality of pillar structures; a first electrode is formed on the transparent conductive layer; and a second electrode is formed on the second region of the first semiconductor layer.
摘要翻译：提供了一种发光器件，其包括衬底，在衬底上具有第一区域和第二区域的第一半导体层; 交流有源层形成在第一半导体层的第一区域上; 在有源表面层上形成第二半导体层，第二半导体层的部分表面是粗糙表面; 具有中空结构的多个柱结构，并且柱结构的外表面和内表面都是粗糙的表面; 形成透明导电层以覆盖多个支柱结构; 在透明导电层上形成第一电极; 并且第二电极形成在第一半导体层的第二区域上。

9. 发明授权

US07973326B2 Semiconductor structure combination for epitaxy of semiconductor optoelectronic device 有权
标题翻译：半导体光电子器件外延半导体结构组合
公开(公告)号：US07973326B2
公开(公告)日：2011-07-05
申请号：US11987640
申请日：2007-12-03
申请人： Chih-Ching Cheng , Tzong-Liang Tsai
发明人： Chih-Ching Cheng , Tzong-Liang Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02381 , H01L21/02389 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02538 , H01L21/02609 , H01L21/0262
摘要： The invention discloses a semiconductor structure combination for the epitaxy of a semiconductor optoelectronic device and manufacture thereof. The semiconductor structure combination according to the invention includes a substrate and a semiconductor material. The substrate has an upper surface and a recess formed on the upper surface. The sidewalls of the recess provide a first site for the growth of a plurality of first epitaxial crystals of the semiconductor material toward a first preferred orientation. A bottom of the recess provides a second site for the growth of a second epitaxial crystal of the semiconductor material toward the first preferred orientation. Flat regions adjacent to the recess provide a third site for the growth of a third epitaxial crystal of the semiconductor material toward the first preferred orientation.
摘要翻译：本发明公开了一种用于半导体光电子器件外延的半导体结构组合及其制造。根据本发明的半导体结构组合包括基板和半导体材料。基板具有形成在上表面上的上表面和凹部。凹槽的侧壁提供了用于朝向第一优选取向生长半导体材料的多个第一外延晶体的第一位置。凹部的底部提供第二位置，用于朝向第一优选取向生长半导体材料的第二外延晶体。与凹部相邻的平坦区域提供第三位置，用于朝向第一优选取向生长半导体材料的第三外延晶体。

10. 发明授权

US07928461B2 Light-emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US07928461B2
公开(公告)日：2011-04-19
申请号：US12418105
申请日：2009-04-03
申请人： Lin-Chieh Kao , Shu-Ying Yang
发明人： Lin-Chieh Kao , Shu-Ying Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/44
摘要： The invention discloses a light-emitting diode which comprises a substrate, a first conducting-type semiconductor layer, plural pillars, a transparent insulating material, an illuminating layer, a second conducting-type semiconductor layer, a first transparent conducting layer and a second transparent conducting layer. The first conducting-type semiconductor layer is formed on the substrate, and the top surface of the first conducting-type semiconductor layer comprises a first region and a second region surrounded by the first region. The pillars are formed on the first region. The transparent insulating material is filled in the gaps between the pillars to be as high as the pillars. The illuminating layer is formed on the second region, and the second conducting-type semiconductor layer is formed on the illuminating layer. The first transparent conducting layer is formed on the second conducting-type semiconductor layer, and the second transparent conducting layer is formed on a top surface of the pillars and the transparent insulating material.
摘要翻译：本发明公开了一种发光二极管，其包括基板，第一导电型半导体层，多个柱，透明绝缘材料，照明层，第二导电型半导体层，第一透明导电层和第二透明导电层导电层。第一导电型半导体层形成在基板上，第一导电型半导体层的顶表面包括由第一区域包围的第一区域和第二区域。柱子形成在第一区域上。透明绝缘材料填充在支柱之间的间隙中，与支柱一样高。照明层形成在第二区域上，第二导电型半导体层形成在照明层上。第一透明导电层形成在第二导电型半导体层上，第二透明导电层形成在柱的顶表面和透明绝缘材料上。

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