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1. 发明授权

US09362719B2 GaN-based quantum dot visible laser 有权
标题翻译： GaN基量子点可见激光器
公开(公告)号：US09362719B2
公开(公告)日：2016-06-07
申请号：US13721930
申请日：2012-12-20
申请人： THE REGENTS OF THE UNIVERSITY OF MICHIGAN
发明人： Pallab Bhattacharya , Meng Zhang
IPC分类号： H01S5/343 , H01S5/30 , H01S5/34 , B82Y20/00 , B82Y40/00 , H01S5/02 , H01S5/028 , H01S5/20 , H01S5/32
CPC分类号： H01S5/3013 , B82Y20/00 , B82Y40/00 , H01S5/0203 , H01S5/028 , H01S5/2009 , H01S5/3211 , H01S5/3412 , H01S5/34333 , H01S2304/02 , Y10S977/774
摘要： A III-nitride based quantum dot (QD) laser is formed of InGaN/GaN quantum dots and capable emitting at a single wavelength within the visible region, including the violet wavelength region (400-440 nm), the blue wavelength region (440-490 nm), the green wavelength region (490-570 nm), the yellow wavelength region (570-590 nm), the orange wavelength region (590-620 nm), and the red wavelength region (620-700 nm), with varying composition as described.
摘要翻译： III族氮化物基量子点（QD）激光器由InGaN / GaN量子点形成，并且能够在包括紫色波长区域（400-440nm）的可见光区域内的单一波长处发射，蓝色波长区域（440- 490nm），黄色波长区域（570-590nm），橙色波长区域（590-620nm）和红色波长区域（620-700nm），与变化的组成如所述。

2. 发明授权

US07936798B2 Nitride based laser diode and method of manufacturing nitride based laser diode 有权
标题翻译：基于氮化物的激光二极管及其制造氮化物激光二极管的方法
公开(公告)号：US07936798B2
公开(公告)日：2011-05-03
申请号：US11660345
申请日：2005-08-09
申请人： Czeslaw Skierbiszewski , Sylwester Porowski , Izabella Grzegory , Piotr Perlin , Michal Leszczyński , Marcin Siekacz , Anna Feduniewicz-Zmuda , Przemyslaw Wiśniewski , Tadeusz Suski , Michal Boćkowski
发明人： Czeslaw Skierbiszewski , Sylwester Porowski , Izabella Grzegory , Piotr Perlin , Michal Leszczyński , Marcin Siekacz , Anna Feduniewicz-Zmuda , Przemyslaw Wiśniewski , Tadeusz Suski , Michal Boćkowski
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/2009 , H01S5/3063 , H01S5/3216 , H01S5/34333 , H01S2304/02
摘要： The laser diode comprising crystalline substrate (1) where set of subsequent n-type layers, set of optically active layers (5) and set of p-type layers is deposited. The set of n-type layers comprise at least one buffer layer (2), bottom n-type cladding layer (3) and n-type bottom waveguide layer. The set of p-type layers comprise at least p-type upper waveguide, which comprises electron blocking layer, upper p-type cladding layer (7) and p-type contact layer (8). The electron blocking layer comprises Inx, AlyGa1-x-y, N alloy doped with magnesium where 1≧x>0.001 a 1≧y 0. The way of making this invention is based on the epitaxial deposition of subsequent set of the n-type layers (2, 3, 4), set of optically active layers (5) and set of p-type layers (6, 7, 8) where the p-type waveguide layer (6) and p-type contact layer (7) is deposited with presence of indium in plasma assisted molecular beam epitaxy method.
摘要翻译：包括晶体衬底（1）的激光二极管，其中沉积了一组后续n型层，一组光学活性层（5）和一组p型层。该组n型层包括至少一个缓冲层（2），底部n型包覆层（3）和n型底部波导层。至少包含电子阻挡层，上P型包层（7）和p型接触层（8）的p型上层波导组。电子阻挡层包括掺杂有镁的In x，Al y Ga 1-xy，N合金，其中1≥x> 0.001a 1≥y0。制备本发明的方式是基于后续一组n型层的外延沉积 2，3，4），p型波导层（6）和p型接触层（7）沉积的一组光学活性层（5）和一组p型层（6,7,8）在等离子体辅助分子束外延法中存在铟。

3. 发明申请

US20090256165A1 METHOD OF GROWING AN ACTIVE REGION IN A SEMICONDUCTOR DEVICE USING MOLECULAR BEAM EPITAXY 审中-公开
标题翻译：使用分子束外延生长半导体器件中的活性区域的方法
公开(公告)号：US20090256165A1
公开(公告)日：2009-10-15
申请号：US12102261
申请日：2008-04-14
申请人： Katherine Louise SMITH , Mathieu Xavier Senes , Tim Michael Smeeton , Victoria Broadley , Stewart Edward Hooper
发明人： Katherine Louise SMITH , Mathieu Xavier Senes , Tim Michael Smeeton , Victoria Broadley , Stewart Edward Hooper
IPC分类号： H01L21/20 , H01L33/00 , H01S5/323
CPC分类号： H01S5/34326 , B82Y10/00 , B82Y20/00 , H01L21/0254 , H01L21/02631 , H01L33/007 , H01L33/06 , H01L33/08 , H01S5/183 , H01S5/341 , H01S5/3412 , H01S2304/02
摘要： A method of making an (Al, Ga, In)N semiconductor device having a substrate and an active region is provided. The method includes growing the active region using a combination of (i) plasma-assisted molecular beam epitaxy; and (ii) molecular beam epitaxy with a gas including nitrogen-containing molecules in which the nitrogen-containing molecules dissociate at a surface of the substrate at a temperature which the active region is grown.
摘要翻译：提供一种制造具有衬底和有源区的（Al，Ga，In）N半导体器件的方法。该方法包括使用（i）等离子体辅助分子束外延的组合来生长活性区域; 和（ii）分子束外延，其中包含含氮分子的气体，其中含氮分子在活性区域生长的温度下在基底表面分解。

4. 发明申请

US20080014667A1 MODIFYING THE OPTICAL PROPERTIES OF A NITRIDE OPTOELECTRONIC DEVICE 审中-公开
标题翻译：修改硝基光电器件的光学性质
公开(公告)号：US20080014667A1
公开(公告)日：2008-01-17
申请号：US11774662
申请日：2007-07-09
申请人： Stewart HOOPER , Matthias Kauer , Jonathan Heffernan , Joanna Alderman , Jennifer Barnes , Valerie Bousquet , Takeshi Kamikawa , Yoshiyuki Takahira
发明人： Stewart HOOPER , Matthias Kauer , Jonathan Heffernan , Joanna Alderman , Jennifer Barnes , Valerie Bousquet , Takeshi Kamikawa , Yoshiyuki Takahira
IPC分类号： H01L33/00
CPC分类号： H01S5/028 , H01L33/007 , H01S5/005 , H01S5/0202 , H01S5/0282 , H01S2304/02 , H01S2304/12
摘要： A method of modifying the optical properties of a processed nitride semiconductor light-emitting device initially comprises disposing the processed nitride semiconductor light-emitting device in a vacuum chamber. One or more nitride semiconductor layers are then grown by molecular beam epitaxy thereby to modify the optical properties of the processed light-emitting device. Activated nitrogen, for example from a plasma source, is supplied to the vacuum chamber during growth of the nitride semiconductor layer(s). The use of activated nitrogen reduces the growth temperature required for the growth of the nitride semiconductor layer(s), as the need for thermal activation of a nitrogen species is eliminated. Moreover, use of a growth method such as, for example, plasma-assisted MBE to grow the nitride semiconductor layer(s) allows much more precise control of their thickness and composition.
摘要翻译：改进加工的氮化物半导体发光器件的光学特性的方法最初包括将经处理的氮化物半导体发光器件设置在真空室中。然后通过分子束外延生长一个或多个氮化物半导体层，从而改变经处理的发光器件的光学性质。在氮化物半导体层的生长期间，例如来自等离子体源的活性氮被供应到真空室。活性氮的使用降低了氮化物半导体层生长所需的生长温度，因为氮物质的热活化被消除。此外，使用诸如例如等离子体辅助MBE的生长方法来生长氮化物半导体层可以更精确地控制它们的厚度和组成。

5. 发明授权

US07282732B2 Quantum dot structures 有权
标题翻译：量子点结构
公开(公告)号：US07282732B2
公开(公告)日：2007-10-16
申请号：US10971555
申请日：2004-10-21
申请人： Allen L Gray , Andreas Stintz , Kevin J Malloy , Luke F Lester , Petros M Varangis
发明人： Allen L Gray , Andreas Stintz , Kevin J Malloy , Luke F Lester , Petros M Varangis
IPC分类号： H01L29/06
CPC分类号： B82Y10/00 , B82Y20/00 , H01L21/02392 , H01L21/02433 , H01L21/02463 , H01L21/02505 , H01L21/02513 , H01L21/02546 , H01S5/2201 , H01S5/3412 , H01S5/34366 , H01S2304/02
摘要： Symmetric quantum dots are embedded in quantum wells. The symmetry is achieved by using slightly off-axis substrates and/or overpressure during the quantum dot growth. The quantum dot structure can be used in a variety of applications, including semiconductor lasers.
摘要翻译：对称量子点嵌入在量子阱中。通过在量子点生长期间使用稍微离轴的衬底和/或超压实现对称性。量子点结构可用于各种应用，包括半导体激光器。

6. 发明授权

US06999488B2 Semiconductor laser device capable of preventing a threshold current and an operating current from increasing and manufacturing method therefor 失效
标题翻译：能够防止阈值电流和工作电流的半导体激光装置的增加和制造方法
公开(公告)号：US06999488B2
公开(公告)日：2006-02-14
申请号：US10602827
申请日：2003-06-25
申请人： Atsuo Tsunoda
发明人： Atsuo Tsunoda
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/2201 , H01S5/2206 , H01S5/2231 , H01S5/34326 , H01S2301/173 , H01S2304/02
摘要： A ridge section constructed of a p-type second AlGaInP clad layer 8, a p-type GaInP interlayer 9 and a p-type GaAs cap layer 10 is formed on an etching stop layer 7. A step of not smaller than 0.13 μm is formed between the p-type interlayer 9 and the p-type second clad layer 8 by making the p-type interlayer 9 protrude in both widthwise directions beyond the p-type second clad layer 8. With this step, AlInP layers can be formed separately from each other on both sides of the ridge section and on the ridge section. Therefore, when the AlInP layer on the ridge section is removed by etching, an AlInP current constriction layer 13 located on both sides of the ridge section is reliably protected by a resist film and not over-etched. The AlInP current constriction layer 13 effectively puts a current constriction function into effect, so that a semiconductor laser device of low-threshold current and low-power consumption is obtained.
摘要翻译：在蚀刻停止层7上形成由p型第二AlGaInP包覆层8，p型GaInP夹层9和p型GaAs覆盖层10构成的脊部。通过使p型中间层9在宽度方向上突出超过p型第二覆盖层8，在p型中间层9和p型第二覆盖层8之间形成不小于0.13μm的台阶。通过该步骤，AlInP层可以在脊部两侧和脊部两侧彼此分开形成。因此，当通过蚀刻去除脊部上的AlInP层时，位于脊部两侧的AlInP电流收缩层13可靠地被抗蚀剂膜保护而不被过度蚀刻。 AlInP电流收缩层13有效地使电流收缩功能起作用，从而获得低阈值电流和低功耗的半导体激光器件。

7. 发明申请

US20050199870A1 Quantum dot structures 有权
标题翻译：量子点结构
公开(公告)号：US20050199870A1
公开(公告)日：2005-09-15
申请号：US10971555
申请日：2004-10-21
申请人： Allen Gray , Andreas Stintz , Kevin Malloy , Luke Lester , Petros Varangis
发明人： Allen Gray , Andreas Stintz , Kevin Malloy , Luke Lester , Petros Varangis
IPC分类号： H01L21/20 , H01L29/06 , H01S20060101 , H01S5/22 , H01S5/34 , H01S5/343
CPC分类号： B82Y10/00 , B82Y20/00 , H01L21/02392 , H01L21/02433 , H01L21/02463 , H01L21/02505 , H01L21/02513 , H01L21/02546 , H01S5/2201 , H01S5/3412 , H01S5/34366 , H01S2304/02
摘要： Symmetric quantum dots are embedded in quantum wells. The symmetry is achieved by using slightly off-axis substrates and/or overpressure during the quantum dot growth. The quantum dot structure can be used in a variety of applications, including semiconductor lasers.
摘要翻译：对称量子点嵌入在量子阱中。通过在量子点生长期间使用稍微离轴的衬底和/或超压实现对称性。量子点结构可用于各种应用，包括半导体激光器。

8. 发明申请

US20050169332A1 Quantum dot gain chip 审中-公开
标题翻译：量子点增益芯片
公开(公告)号：US20050169332A1
公开(公告)日：2005-08-04
申请号：US10504886
申请日：2002-06-10
申请人： Jochen Schwarz , Tobias Ruf , Emmerich Mueller
发明人： Jochen Schwarz , Tobias Ruf , Emmerich Mueller
IPC分类号： H01S5/14 , H01S5/34 , H01S5/40 , H01S5/00
CPC分类号： B82Y20/00 , H01S5/141 , H01S5/143 , H01S5/341 , H01S5/3412 , H01S5/4043 , H01S2304/02
摘要： A gain chip for a laser includes a stack of layers. The stack has a first layer with light emitting quantum nanostructures of a first center emission wavelength, and a second layer on the first layer with light emitting quantum nanostructures of a second center emission wavelength.
摘要翻译：用于激光器的增益芯片包括一叠层。该堆叠具有第一层，其具有第一中心发射波长的发光量子纳米结构，第二层具有第二中心发射波长的发光量子纳米结构。

9. 发明申请

US20050040413A1 Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system 有权
标题翻译：半导体发光器件，表面发射激光二极管及其制造装置，制造方法，光模块和光通信系统
公开(公告)号：US20050040413A1
公开(公告)日：2005-02-24
申请号：US10788086
申请日：2004-02-27
申请人： Takashi Takahashi , Morimasa Kaminishi , Shunichi Sato , Akihiro Itoh , Naoto Jikutani
发明人： Takashi Takahashi , Morimasa Kaminishi , Shunichi Sato , Akihiro Itoh , Naoto Jikutani
IPC分类号： H01L33/00 , H01S5/042 , H01S5/183 , H01S5/20 , H01S5/223 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0224 , H01S5/0425 , H01S5/18305 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S5/2063 , H01S5/2231 , H01S5/32366 , H01S5/34306 , H01S5/34333 , H01S5/34366 , H01S5/34386 , H01S5/423 , H01S2301/173 , H01S2301/176 , H01S2304/02 , H01S2304/025 , H01S2304/04
摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
摘要翻译：半导体发光器件具有在衬底和含有氮的有源层之间包含Al的半导体层，其中在生长所述有源层之前从生长室中除去Al和氧，并且与Al一起掺入所述有源层中的氧浓度被设定为使得所述半导体发光装置能够在室温下进行连续激光振荡的电平。

10. 发明申请

US20030157739A1 ELECTRICALLY PUMPED LONG-WAVELENGTH VCSEL AND METHODS OF FABRICATION 失效
标题翻译：电泵浦长波长VCSEL和制造方法
公开(公告)号：US20030157739A1
公开(公告)日：2003-08-21
申请号：US10280521
申请日：2002-10-25
发明人： Wenbin Jiang , Julian Cheng , Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： H01L021/00
CPC分类号： B82Y20/00 , H01L21/02395 , H01L21/02433 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/0262 , H01S5/18313 , H01S5/32366 , H01S5/34306 , H01S5/34346 , H01S2304/02 , H01S2304/04
摘要： A method of fabricating a vertical cavity surface emitting laser comprising the steps of epitaxially growing a first DBR positioned on a substrate wherein the first DBR is epitaxially grown using MOCVD. The substrate is orientated in an off-axis crystallographic direction which increases the radiative efficiency. A first cladding layer is positioned on the first DBR and an active region is epitaxially grown on the first cladding layer wherein the active region is epitaxially grown using plasma assisted MBE. A second DBR is epitaxially grown on the second cladding layer wherein the second DBR is epitaxially grown using MOCVD. The active region is epitaxially grown using plasma assisted MBE to increase the mole fraction of nitrogen (N) incorporation. The DBR's are grown using MOCVD to improve the electrical performance.
摘要翻译：一种制造垂直腔表面发射激光器的方法，包括以下步骤：外延生长位于衬底上的第一DBR，其中使用MOCVD外延生长第一DBR。基板在偏轴结晶方向取向，这提高了辐射效率。第一覆层位于第一DBR上，并且在第一覆层上外延生长有源区，其中使用等离子体辅助MBE外延生长有源区。在第二覆层上外延生长第二DBR，其中使用MOCVD外延生长第二DBR。使用等离子体辅助MBE外延生长活性区域以增加氮（N）掺入的摩尔分数。使用MOCVD生长DBR以提高电气性能。

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