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1. 发明申请

US20170077675A1 THERMAL EMISSION SOURCE AND TWO-DIMENSIONAL PHOTONIC CRYSTAL FOR USE IN THE SAME EMISSION SOURCE 有权
标题翻译：热发射源和二维光子晶体用于相同的发射源
公开(公告)号：US20170077675A1
公开(公告)日：2017-03-16
申请号：US15120254
申请日：2015-02-24
申请人： JAPAN SCIENCE AND TECHNOLOGY AGENCY
发明人： Susumu NODA , Takuya INOUE , Takashi ASANO , Menaka DE ZOYSA
IPC分类号： H01S5/10 , H01S5/024 , H01S5/02 , H01S5/34 , H01S5/042
CPC分类号： H01S5/18319 , H01S5/0014 , H01S5/0207 , H01S5/02453 , H01S5/02461 , H01S5/0421 , H01S5/0422 , H01S5/0425 , H01S5/0428 , H01S5/105 , H01S5/18316 , H01S5/3086 , H01S5/309 , H01S5/3402 , H01S5/3419 , H01S2302/02
摘要： A thermal emission source capable of switching the intensity of light at a high response speed similarly to a photoelectric conversion element. A thermal emission source includes: a two-dimensional photonic crystal including a slab in which an n-layer made of an n-type semiconductor, a quantum well structure layer having a quantum well structure, and a p-layer made of a p-type semiconductor are stacked in the mentioned order in the thickness direction, wherein modified refractive index areas (air holes) whose refractive index differs from the refractive indices of the n-layer, the p-layer and the quantum well structure layer are cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between the subbands in a quantum well in the quantum well structure layer; and a p-type electrode and an n-type electrode for applying, to the slab, a voltage which is negative on the side of the p-layer and positive on the side of the n-layer.
摘要翻译：与光电转换元件类似的能够以高响应速度切换光的强度的热发射源。热发射源包括：二维光子晶体，其包括其中由n型半导体制成的n层，具有量子阱结构的量子阱结构层和由p-型半导体制成的p层的板，类型半导体沿厚度方向以上述顺序堆叠，其折射率与n层，p层和量子阱结构层的折射率不同的改性折射率区域（空气孔）循环地布置在以便与量子阱结构层中的量子阱中的子带之间的跃变能相对应的特定波长的光谐振; 以及p型电极和n型电极，用于向所述板施加在所述p层侧为负的电压，并且在所述n层的一侧为正。

2. 发明授权

US08917752B2 Reflectivity-modulated grating mirror 有权
标题翻译：反射调制光栅镜
公开(公告)号：US08917752B2
公开(公告)日：2014-12-23
申请号：US14111319
申请日：2012-05-09
申请人： Ii-Sug Chung
发明人： Ii-Sug Chung
IPC分类号： H01S5/00 , H01S5/183
CPC分类号： H01S5/18302 , H01S5/0655 , H01S5/105 , H01S5/18311 , H01S5/18316 , H01S5/18325 , H01S5/18327 , H01S5/18341 , H01S5/18366 , H01S5/18386 , H01S5/3095
摘要： The invention relates to vertical cavity lasers (VCL) incorporating a reflectivity-modulated grating mirror (1) for modulating the laser output. A cavity is formed by a bottom mirror (4), an active region (3), and an outcoupling top grating mirror (1) formed by a periodic refractive index grating region in a layer structure comprising a p- and a n-doped semiconductor layer with an electrooptic material layer (12) arranged there between. The grating region comprises a grating structure formed by periodic perforations to change the refractive index periodically in directions normal to the oscillation axis. A modulated voltage (91) is applied in reverse bias between the n- and p-doped layers to modulate the refractive index of the electrooptic material layer (12) and thereby the reflectivity spectrum of the grating mirror (1). The reflectivity of the grating mirror (1) can be modulated between a reflectivity with little or no out coupling and a reflectivity with normal out coupling, wherein lasing in the VCL is supported at both the first and the second reflectivity. As the out coupling mirror modulates the output, the lasing does not need to be modulated, and the invention provides the advantage of lower power consumption at high modulation speeds.
摘要翻译：本发明涉及结合有用于调制激光输出的反射率调制光栅镜（1）的垂直腔激光器（VCL）。空腔由底部反射镜（4），有源区域（3）和外耦合顶部光栅反射镜（1）形成，该反射镜顶部光栅反射镜（1）由层状结构中的周期性折射率光栅区形成，该层结构包括p型和n型掺杂半导体层，其间布置有电光材料层（12）。光栅区域包括通过周期性穿孔形成的光栅结构，以便以垂直于振荡轴线的方向周期性地改变折射率。调制电压（91）以反向偏压施加在n和p掺杂层之间，以调制电光材料层（12）的折射率，从而调整光栅镜（1）的反射光谱。光栅反射镜（1）的反射率可以在具有很少或没有耦合的反射率和具有正向耦合的反射率之间进行调制，其中VCL上的激光在第一和第二反射率都被支持。由于输出耦合镜调制输出，所以不需要对激光进行调制，本发明提供了在高调制速度下较低功耗的优点。

3. 发明申请

US20120027038A1 TWO-DIMENSIONAL PHOTONIC CRYSTAL LASER 有权
标题翻译：二维光子晶体激光
公开(公告)号：US20120027038A1
公开(公告)日：2012-02-02
申请号：US13192852
申请日：2011-07-28
申请人： Susumu Noda , Takui Sakaguchi , Kazuya Nagase , Wataru Kunishi , Eiji Miyai , Yoshikatsu Miura , Dai Ohnishi
发明人： Susumu Noda , Takui Sakaguchi , Kazuya Nagase , Wataru Kunishi , Eiji Miyai , Yoshikatsu Miura , Dai Ohnishi
IPC分类号： H01S5/323
CPC分类号： H01S5/105 , H01S5/1231 , H01S5/18316 , H01S5/18319 , H01S5/187 , H01S5/3013 , H01S2301/17
摘要： A two-dimensional photonic crystal laser according to the present invention includes a two-dimensional photonic crystal layer 15 having a base body made of AlαGa1-αAs (0
摘要翻译：根据本发明的二维光子晶体激光器包括具有由AlαGa1-αAs（0 <α<1）或（Al＆bgr; Ga1-bgr））γIn1-γP（...）形成的基体的二维光子晶体层15 0 <=＆bgr; <1,0 <γ<1），周期性地布置有修正的折射率区域（空气孔）151，以及通过外延法在二维光子晶体层15上形成的外延生长层16。由于AlαGa1-αAs和（Al＆bgr; Ga1-bgr）γIn1-γP即使在高温下也是固体，所以在形成外延生长层16的过程中，空气孔151不会变形，作为谐振器的三维光子晶体层15可以保持在高水平。

4. 发明申请

US20080144686A1 Surface emitting laser 审中-公开
标题翻译：表面发射激光
公开(公告)号：US20080144686A1
公开(公告)日：2008-06-19
申请号：US12000660
申请日：2007-12-14
申请人： Yoshinori Tanaka , Masashi Yamamoto
发明人： Yoshinori Tanaka , Masashi Yamamoto
IPC分类号： H01S5/183
CPC分类号： H01S5/18311 , H01S5/18316 , H01S2301/176
摘要： A surface emitting laser includes an n-side multilayered reflection film and an active layer which are formed on a substrate. On the active layer, a mesa region is formed by sequentially stacking an AlGaAs current blocking layer, a p-side multilayered reflection film, a p-type contact layer and the like. A groove is formed to separate the mesa region from an outside region. The mesa region and the outside region are connected to each other with a beam portion provided in the groove. A reflection film with a high Al composition ratio in the p-side multilayered reflection film in the beam portion is completely oxidized, and thus has a high resistance.
摘要翻译：表面发射激光器包括形成在衬底上的n侧多层反射膜和有源层。在有源层上，通过依次堆叠AlGaAs电流阻挡层，p侧多层反射膜，p型接触层等形成台面区域。形成凹槽以将台面区域与外部区域分离。台面区域和外部区域通过设置在凹槽中的梁部彼此连接。在梁部分中的p侧多层反射膜中具有高Al组成比的反射膜被完全氧化，因此具有高电阻。

5. 发明申请

US20070120206A1 Semiconductor optical device having current-confined structure 有权
标题翻译：具有限流结构的半导体光学器件
公开(公告)号：US20070120206A1
公开(公告)日：2007-05-31
申请号：US11698418
申请日：2007-01-25
申请人： Hyun Song , O Kwon , Won Han , Sang Park , Jong Kim , Jae Shin , Young Ju
发明人： Hyun Song , O Kwon , Won Han , Sang Park , Jong Kim , Jae Shin , Young Ju
IPC分类号： H01L29/82
CPC分类号： H01L33/145 , H01S5/18308 , H01S5/18316 , H01S5/18347 , H01S5/3095 , H01S2301/176
摘要： Provided is a semiconductor optical device having a current-confined structure. The device includes a first semiconductor layer of a first conductivity type which is formed on a semiconductor substrate and includes one or more material layers, a second semiconductor layer which is formed on the first semiconductor layer and includes one or more material layers, and a third semiconductor layer of a second conductivity type which is formed on the second semiconductor layer and includes one or more material layers. One or more layers among the first semiconductor layer, the second semiconductor, and the third semiconductor layer have a mesa structure. A lateral portion of at least one of the material layers constituting the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is recessed, and the recess is partially or wholly filled with an oxide layer, a nitride layer or a combination of them. The semiconductor optical device having the current-confined region is mechanically reliable, highly thermally conductive, and commercially preferable and can be used in a wavelength range for optical communications.
摘要翻译：提供了具有限流结构的半导体光学器件。该器件包括：第一导电类型的第一半导体层，其形成在半导体衬底上并且包括一个或多个材料层;第二半导体层，形成在第一半导体层上并包括一个或多个材料层;第三半导体层，第二导电类型的半导体层，其形成在第二半导体层上并且包括一个或多个材料层。第一半导体层，第二半导体和第三半导体层中的一层或多层具有台面结构。构成第一半导体层，第二半导体层和第三半导体层的至少一个材料层的侧面部分被凹入，并且凹部被部分地或全部地填充有氧化物层，氮化物层或者他们。具有电流限制区域的半导体光学器件是机械可靠的，高导热性的，并且是商业上优选的，并且可以用于光通信的波长范围。

6. 发明申请

US20060126694A1 Hybrid metal bonded vertical cavity surface emitting laser and fabricating method thereof 审中-公开
标题翻译：混合金属结合垂直腔表面发射激光器及其制造方法
公开(公告)号：US20060126694A1
公开(公告)日：2006-06-15
申请号：US11179954
申请日：2005-07-12
申请人： O. Kyun Kwon , Mi Ran Park , Won Seok Han , Jong Hee Kim , Hyun Woo Song
发明人： O. Kyun Kwon , Mi Ran Park , Won Seok Han , Jong Hee Kim , Hyun Woo Song
IPC分类号： H01S5/00
CPC分类号： H01S5/18316 , H01S5/0215 , H01S5/0217 , H01S5/18369 , H01S5/18375 , H01S5/18377
摘要： Provided is a method of fabricating a vertical cavity surface emitting laser among semiconductor optical devices, comprising: bonding a dielectric mirror layer to an epi-structure having a mirror layer and an active layer; bonding these on a new substrate using a metal bonded method; removing the existing substrate; and fabricating a vertical cavity surface emitting laser on the new substrate. The method of fabricating the vertical cavity surface emitting laser is performed by moving and attaching a vertical cavity surface emitting laser to a new substrate using an external metallic bonding method, without electrically and optically affecting upper and lower mirrors and an active layer that constitutes the vertical cavity surface emitting laser. While using the existing method of fabricating the vertical cavity surface emitting laser, the VCSEL is fabricated by moving to a new substrate having good thermal characteristics so that good heat emission characteristics are accomplished, thus facilitating manufacture of the vertical cavity surface emitting laser having high reliability and good characteristics.
摘要翻译：提供了一种在半导体光学器件中制造垂直腔表面发射激光器的方法，包括：将介质镜层结合到具有镜层和有源层的外延结构; 使用金属键合方法将它们结合在新的基板上; 去除现有的基板; 并在新基板上制造垂直腔表面发射激光器。垂直腔表面发射激光器的制造方法是通过使用外部金属接合方法将垂直空腔表面发射激光器移动并附着到新的衬底而进行的，而不会电和影响上镜和下反射镜以及构成垂直腔的表面发射激光的有源层腔表面发射激光。在使用制造垂直腔表面发射激光器的现有方法的同时，通过移动到具有良好热特性的新衬底来制造VCSEL，从而实现良好的发热特性，从而有助于制造具有高可靠性的垂直腔表面发射激光器和良好的特点。

7. 发明申请

US20060013276A1 VCSEL having an air gap and protective coating 审中-公开
标题翻译： VCSEL具有气隙和保护涂层
公开(公告)号：US20060013276A1
公开(公告)日：2006-01-19
申请号：US10892983
申请日：2004-07-15
申请人： Scott McHugo
发明人： Scott McHugo
IPC分类号： H01S5/00
CPC分类号： H01S5/1835 , H01S5/18313 , H01S5/18316 , H01S5/18338 , H01S2301/176
摘要： A VCSEL includes a gap in a mirror stack and a protective layer sealing an end of the gap. The gap defines a boundary of the aperture of the VCSEL without introducing the stresses that oxide regions in oxide VCSELs can cause, and the protective layer, which can be a thin dielectric layer, shields the mirror stack from environmental damage. The VCSEL can thus achieve high reliability. A fabrication process for the VCSEL forms an oxidation hole, oxidizes a portion of an aluminum-rich layer in a mirror stack of the VCSEL exposed in the hole, and then removes all or some of the resulting oxide to form the desired gap. The protective layer can then be deposited to seal an end of the gap.
摘要翻译： VCSEL包括反射镜堆叠中的间隙和密封间隙的端部的保护层。该间隙限定VCSEL的孔径的边界，而不引入氧化物VCSEL中的氧化物区域可能引起的应力，并且可以是薄介电层的保护层屏蔽反射镜叠层免受环境破坏。因此，VCSEL可以实现高可靠性。用于VCSEL的制造工艺形成氧化孔，氧化暴露在孔中的VCSEL的反射镜叠层中的富铝层的一部分，然后去除所有或一些所得到的氧化物以形成所需的间隙。然后可以沉积保护层以密封间隙的一端。

8. 发明授权

US06841407B2 Method for aperturing vertical-cavity surface-emitting lasers (VCSELs) 失效
标题翻译：用于开孔垂直腔表面发射激光器（VCSEL）的方法
公开(公告)号：US06841407B2
公开(公告)日：2005-01-11
申请号：US09935352
申请日：2001-08-21
申请人： Larry A. Coldren , Eric M. Hall , Shigeru Nakagawa , Guilhem Almuneau
发明人： Larry A. Coldren , Eric M. Hall , Shigeru Nakagawa , Guilhem Almuneau
IPC分类号： H01S5/024 , H01S5/042 , H01S5/183 , H01S5/30 , H01S5/323 , H01S5/343 , H01S5/00
CPC分类号： B82Y20/00 , H01S5/02461 , H01S5/0421 , H01S5/18305 , H01S5/18316 , H01S5/18341 , H01S5/18344 , H01S5/2086 , H01S5/305 , H01S5/3095 , H01S5/32341 , H01S5/3235 , H01S5/34306
摘要： A method for aperturing a vertical-cavity surface-emitting laser (VCSEL), for increasing the external quantum efficiency and decreasing the threshold current, involves an etching mixture that is applied to the active region of the VCSEL. The etching mixture is designed in a manner to selectively etch the active region of the VCSEL at a rate substantially faster than the etch rate of at least one of the multiple DBRS associated with the VCSEL.
摘要翻译：用于增加垂直腔表面发射激光器（VCSEL）的方法，用于增加外部量子效率和降低阈值电流，涉及施加到VCSEL的有源区的蚀刻混合物。蚀刻混合物的设计方法是选择性地以比VCSEL相关联的多个DBRS中的至少一个蚀刻速率快的速率选择性地刻蚀VCSEL的有源区。

9. 发明授权

US06810064B1 Heat spreading layers for vertical cavity surface emitting lasers 失效
标题翻译：用于垂直腔表面发射激光器的散热层
公开(公告)号：US06810064B1
公开(公告)日：2004-10-26
申请号：US09934791
申请日：2001-08-21
申请人： Larry A. Coldren , Eric M. Hall , Shigeru Nakagawa
发明人： Larry A. Coldren , Eric M. Hall , Shigeru Nakagawa
IPC分类号： H01S308
CPC分类号： B82Y20/00 , H01S5/02461 , H01S5/18316 , H01S5/18341 , H01S5/3095 , H01S5/34306
摘要： A system and a method for reducing the temperature in a vertical-cavity surface-emitting laser (VCSEL) comprising of including at least one heat spreading layer adjecent to one of the reflecting surfaces in a VCSEL. The heat spreading layer has high thermal conductivity allowing heat to bypass said one of the reflecting surfaces, thereby efficiently removing the heat away from the device. This also reduces the serial resistance and the thermal impedance of the VCSEL.
摘要翻译：一种用于降低垂直腔表面发射激光器（VCSEL）中的温度的系统和方法，包括在VCSEL中包括与所述反射表面中的一个相邻的至少一个热扩散层。散热层具有高热导率，允许热量绕过所述一个反射表面，从而有效地将热量从器件上除去。这也降低了VCSEL的串联电阻和热阻抗。

10. 发明授权

US06798817B2 Distributed bragg reflectors incorporating SB material for long-wavelength vertical cavity surface emitting lasers 失效
标题翻译：分布式布拉格反射器，包含用于长波长垂直腔表面发射激光器的SB材料
公开(公告)号：US06798817B2
公开(公告)日：2004-09-28
申请号：US09935012
申请日：2001-08-21
申请人： Larry A. Coldren , Eric M. Hall , Guilhem Almuneau
发明人： Larry A. Coldren , Eric M. Hall , Guilhem Almuneau
IPC分类号： H01S308
CPC分类号： B82Y20/00 , H01S5/02461 , H01S5/0421 , H01S5/18305 , H01S5/18316 , H01S5/18341 , H01S5/18344 , H01S5/2086 , H01S5/305 , H01S5/3095 , H01S5/32341 , H01S5/3235 , H01S5/34306
摘要： A distributed Bragg reflector (DBR) for a vertical cavity surface emitting laser (VCSEL) has a semiconductor material system including the elements aluminum, gallium, arsenic, and antimony. Use of antimony in the DBR structure allows current to be pumped through the DBRs into an active region to provide for long wavelength, continuous wave operation of the VCSEL.
摘要翻译：用于垂直腔表面发射激光器（VCSEL）的分布式布拉格反射器（DBR）具有包括铝，镓，砷和锑元素的半导体材料系统。在DBR结构中使用锑允许电流通过DBR泵送到有源区域，以提供VCSEL的长波长连续波动操作。

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