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    • 10. 发明授权
    • Adjustment of thick film resistor (TCR) by laser annealing
    • 通过激光退火调整厚膜电阻(TCR)
    • US4703557A
    • 1987-11-03
    • US916414
    • 1986-10-07
    • John F. NesporRobert F. GornickRichard Y. Kwor
    • John F. NesporRobert F. GornickRichard Y. Kwor
    • H01C17/232H01C17/26H01C17/06
    • H01C17/232H01C17/265Y10T29/49099
    • The adjustment of the temperature coefficient of resistance (TCR) of a thick film resistor by laser annealing is disclosed. The thick film resistor is fired for a controlled time and temperature sufficient to burn off the organic material in the resistive paint, and to provide an initial adjustment of the (TCR), but prior to obtaining the desired (TCR) range. The resistor is then laser annealed to controllably adjust the (TCR) of the resistor within the desired (TCR) range. The fixture used to hold the substrate during laser annealing is preferably controllably heated to avoid thermal shock to the resistor during laser annealing. A microprocessor is preferably used to monitor the (TCR) during the laser annealing process. At least one of the laser scan speed, laser beam diameter, laser beam power, and number of annealing passes are used to controllably adjust the resistor (TCR) to within the desired (TCR) range.
    • 公开了通过激光退火调整厚膜电阻器的电阻温度系数(TCR)。 烧制厚膜电阻器的时间和温度足以烧掉电阻涂料中的有机材料,并提供(TCR)的初始调整,但在获得所需的(TCR)范围之前。 然后对电阻器进行激光退火,以可控制地将电阻器的(TCR)调节到期望的(TCR)范围内。 用于在激光退火期间保持基板的固定装置优选地被可控地加热以避免在激光退火期间对电阻器的热冲击。 优选使用微处理器来监测激光退火过程中的(TCR)。 使用激光扫描速度,激光束直径,激光束功率和退火次数中的至少一个来可控地将电阻器(TCR)调节到期望的(TCR)范围内。