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    • 1. 发明授权
    • ZnO varistor powder
    • ZnO变阻器粉末
    • US08216544B2
    • 2012-07-10
    • US12529773
    • 2008-03-05
    • Hideyasu AndoYasunori Kasuga
    • Hideyasu AndoYasunori Kasuga
    • B32B5/16C01G9/02H01C8/00
    • H01C7/112C04B35/453H01B1/08Y10T428/2982
    • A ZnO varistor powder can be obtained with high operating voltage and excellent current-voltage nonlinear resistance characteristics. In the ZnO varistor powder, the main ingredient is zinc oxide (ZnO); and at least bismuth (Bi), cobalt (Co), manganese (Mn), antimony (Sb), nickel (Ni), and aluminum (Al), calculated as Bi2O3, CO2O3, MnO, Sb2O3, NiO, and Al3+, are contained as accessory ingredients in amounts of 0.3 to 1.5 mol % Bi2O3, 0.3 to 2.0 mol % Co2O3, 0.3 to 3 mol % MnO, 0.5 to 4 mol % Sb2O3, 0.5 to 4 mol % NiO, and 0.0005 to 0.02 mol % Al3+. ZnO content is greater than or equal to 90 mol %; the bulk density is greater than or equal to 2.5 g/cc; the powder is a spherical powder in which the 50% particle diameter in the particle size distribution is 20 μm to 120 μm.
    • 可以获得具有高工作电压和优异的电流 - 电压非线性电阻特性的ZnO变阻器粉末。 在ZnO变阻器粉末中,主要成分是氧化锌(ZnO); 并且以Bi 2 O 3,CO 2 O 3,MnO,Sb 2 O 3,NiO和Al 3+计算的至少铋(Bi),钴(Co),锰(Mn),锑(Sb),镍(Ni)和铝(Al) 含有0.3〜1.5摩尔%Bi 2 O 3,0.3〜2.0摩尔%Co 2 O 3,0.3〜3摩尔%MnO,0.5〜4摩尔%Sb 2 O 3,0.5〜4摩尔%NiO和0.0005〜0.02摩尔%的Al 3+作为辅助成分。 ZnO含量大于或等于90mol%; 体积密度大于或等于2.5g / cc; 粉末是粒径分布中50%粒径为20μm〜120μm的球状粉末。
    • 7. 发明授权
    • Film resistor with a constant temperature coefficient and production of a film resistor of this type
    • 具有恒定温度系数的薄膜电阻器和这种类型的薄膜电阻器的生产
    • US08198978B2
    • 2012-06-12
    • US12736573
    • 2009-04-06
    • Günther SchultesDirk GöttelRalf KoppertOlivia Freitag-WeberUlf WernerWolfgang Brode
    • Günther SchultesDirk GöttelRalf KoppertOlivia Freitag-WeberUlf WernerWolfgang Brode
    • H01C8/00
    • H01C7/02G01L1/18G01L1/2281G01L1/2287H01C7/04H01C17/08H01C17/12Y10T29/49099
    • The invention relates to a film resistor (1) comprising a carbon-containing material (3) into which clusters (4) of conductive cluster material are introduced, wherein the conductive cluster material has a positive temperature coefficient. The clusters (4) are surrounded by a graphite casing and embedded in the carbon-containing material (3). Furthermore, the cluster material is present in a thermodynamically stable phase. The invention also relates to a method for producing a film resistor (1), wherein a PVD process is carried out on a carrier substrate (11) using a sputtering material under a reactive atmosphere of a carbon-containing gas, and therefore the carbon-containing gas is dissociated and a carbon-containing layer (3) is deposited on the carrier substrate (11), with clusters (4) of the sputtering material being embedded in said carbon-containing layer, wherein the carbon-containing layer (3) is heated to a predetermined temperature while the PVD process is carried out, with the sputtering material or a compound of the sputtering material forming in a stable phase at said temperature.
    • 本发明涉及一种包含含碳材料(3)的薄膜电阻(1),其中导入有导电簇材料的簇(4),其中导电簇材料具有正温度系数。 簇(4)由石墨壳体包围并嵌入含碳材料(3)中。 此外,簇材料存在于热力学稳定的相中。 本发明还涉及一种制造薄膜电阻器(1)的方法,其中在含碳气体的反应气氛下,使用溅射材料在载体基板(11)上进行PVD工艺,因此碳 - 使含有气体的气体解离,并且在载体基板(11)上沉积含碳层(3),溅射材料的簇(4)嵌入所述含碳层中,其中含碳层(3) 在溅射材料或溅射材料的化合物在所述温度下形成稳定相的同时进行PVD工艺,加热至预定温度。
    • 8. 发明授权
    • Analytical device
    • 分析装置
    • US07186356B2
    • 2007-03-06
    • US10479745
    • 2002-05-30
    • David LusseyDavid BloorPaul Jonathan LaughlinPhilip James Walton Hands
    • David LusseyDavid BloorPaul Jonathan LaughlinPhilip James Walton Hands
    • H01B1/00H01C8/00H01C10/14
    • G01N27/126H01C7/027H01C10/106
    • A sensor for chemical species or biological species or radiation presenting to test fluid a polymer composition comprises polymer and conductive filler metal, alloy or reduced metal oxide and having a first level of electrical conductance when quiescent and being convertible to a second level of conductance by change of stress applied by stretching or compression or electric field, in which the polymer composition is characterized by at least one of the features in the form of particles at least 90% w/w held on a 100 mesh sieve; and/or comprising a permeable body extending across a channel of fluid flow; and/or affording in-and-out diffusion of test fluid and/or mechanically coupled to a workpiece of polymer swellable by a constituent of test fluid.
    • 用于化学物质或生物物质或辐射呈现以用于测试聚合物组合物的流体的传感器包括聚合物和导电填料金属,合金或还原金属氧化物,并且当静止并且通过变化可转换成第二电导水平时具有第一水平的导电性 通过拉伸或压缩或电场施加的应力,其中聚合物组合物的特征在于保持在100目筛上的至少90%w / w的颗粒形式的至少一种特征; 和/或包括延伸穿过流体流动通道的可渗透体; 和/或提供测试流体的进出扩散和/或机械耦合到聚合物的工件上,所述聚合物可由测试流体的组分溶胀。
    • 10. 发明授权
    • Starting material for use in manufacturing a voltage non-linear resistor
    • 用于制造电压非线性电阻器的起始材料
    • US5269971A
    • 1993-12-14
    • US921327
    • 1992-07-29
    • Osamu ImaiRitsu Sato
    • Osamu ImaiRitsu Sato
    • H01C7/112C04B35/00H01C8/00
    • H01C7/112
    • A voltage non-linear resistor element mainly including ZnO, substantially free from internal defects, exhibiting an excellent current impulse withstand capability, can be manufactured by a process wherein an SiC inclusion in the starting ZnO powder is restricted to at most 10 ppm, preferably at most 0.1 ppm, by weight, whereby formation of closed pores in the element is prevented, which is otherwise caused by decomposition of considerable amount of SiC during firing. The starting ZnO powder has an average particle diameter (R) of 0.1-2.0 .mu.m, preferably 0.3-0.8 .mu.m, a particle size distribution within the range of between 0.5R and 2R, of at least 70%, preferably 80%, by weight, needle-like crystals of at most 20%, preferably at most 10%, by weight, and an SiC content as an impurity of at most 10 ppm, preferably at most 0.1 ppm, by weight.
    • 主要包含ZnO的电压非线性电阻元件,其基本上没有内部缺陷,表现出优异的电流冲击耐受能力,可以通过其中起始ZnO粉末中的SiC夹杂物限制在至多10ppm,优选在 最大为0.1ppm(重量),从而防止元件中闭孔的形成,否则由焙烧期间大量的SiC分解引起。 起始ZnO粉末的平均粒径(R)为0.1〜2.0μm,优选为0.3〜0.8μm,粒径分布在0.5R〜2R之间,为70%以上,优选为80% ,优选为20重量%以下,优选为10重量%以下的针状结晶,作为杂质的SiC含量为10重量ppm以下,优选为0.1重量ppm以下。