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1. 发明申请

WO9749125A3 METHOD OF MANUFACTURING AN ELECTRONIC DEVICE COMPRISING THIN-FILM TRANSISTORS 审中-公开
标题翻译：制造包含薄膜晶体管的电子器件的方法
公开(公告)号：WO9749125A3
公开(公告)日：1999-11-04
申请号：PCT/IB9700471
申请日：1997-04-30
申请人： PHILIPS ELECTRONICS NV , PHILIPS NORDEN AB
发明人： YOUNG NIGEL DAVID
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786 , H01L21/263 , H01L21/268
CPC分类号： H01L29/66757 , H01L21/2026 , H01L27/1229 , H01L27/1281 , H01L29/78609
摘要： A flat panel display or other large-area electronic device comprises at least one TFT (T1; T2) having a crystalline channel region (1) and amorphous edge regions (13) adjacent sidewalls (12) of the TFT island (11). The TFT is fabricated by steps which include: (a) depositing on substrate (10) a thin film (11') of amorphous semiconductor material to provide the semiconductor material, (b) removing areas of the thin film (11') to form the side walls (12a, 12b) of each island (11), (c) forming a masking pattern (20) over the edge regions (13a, 13b) preferably on an insulating film (22), and (d) directing a laser or other energy beam (50) towards the islands (11) and the masking pattern (20) to crystallise the un-masked semiconductor material for the crystalline channel region (1), while retaining amorphous semiconductor material adjacent the side walls (12a, 12b) where the edge regions (13a, 13b) are masked from the energy beam (50) by the masking pattern (20). The resulting device structure has e.g polycrystalline TFTs (T1, T2) with low off-state leakage currents as a result of the amorphous material properties kept for the edge regions (13a) particularly where crossed by the insulated gate (4). The substrate (10) may be of polymer material which also is masked from the beam (50) by the masking pattern (20).
摘要翻译：平板显示器或其他大面积电子器件包括具有晶体沟道区域（1）的至少一个TFT（T1; T2）和与TFT岛（11）的侧壁（12）相邻的非晶边缘区域（13）。 TFT由以下步骤制造，其包括：（a）在衬底（10）上沉积非晶半导体材料的薄膜（11'）以提供半导体材料，（b）去除薄膜（11'）的区域以形成每个岛（11）的侧壁（12a，12b），（c）优选地在绝缘膜（22）上在边缘区域（13a，13b）上形成掩模图案（20），和（d）引导激光或其他能量束（50）朝向岛（11）和掩模图案（20）以结晶用于晶体沟道区域（1）的未掩蔽的半导体材料，同时保持邻近侧壁（12a，12b）的非晶半导体材料），其中所述边缘区域（13a，13b）被所述掩模图案（20）从所述能量束（50）掩蔽。所得到的器件结构具有例如由于对于边缘区域（13a）保持的非晶材料特性，特别是在被绝缘栅极（4）交叉的情况下，具有低截止状态漏电流的多晶硅（T1，T2）。衬底（10）可以是聚合物材料，其也通过掩模图案（20）从光束（50）掩蔽。

2. 发明申请

WO9633556A3 TOUCH SENSING DEVICES AND METHODS OF MAKING SUCH 审中-公开
标题翻译：触摸感应装置及其制作方法
公开(公告)号：WO9633556A3
公开(公告)日：1996-11-28
申请号：PCT/IB9600199
申请日：1996-03-11
申请人： PHILIPS ELECTRONICS NV , PHILIPS NORDEN AB
发明人： YOUNG NIGEL DAVID
IPC分类号： G01B7/28 , G06F3/033 , G06F3/041 , G06K9/00 , H01H1/00 , H01H13/702 , H01H13/703 , H01H13/712 , H01H13/76 , H03K17/96
CPC分类号： G06F3/0414 , G06K9/0002 , H01H1/0036 , H01H13/702 , H01H13/703 , H01H2211/00 , H01H2229/016
摘要： A touch sensing device comprising a plurality of individually operable touch sensing elements (10) having first and second overlapping and spaced conductive layers (12,15) with the second conductive layer (15) being displaceable towards the first conductive layer (12) in response to a touch input, is fabricated by forming on a support (14) a thin film multi-layer structure comprising the first and second conductive layers with an insulating layer (16) therebetween and in which the second conductive layer (15) is provided with apertures (22) at predetermined regions, and subjecting the structure to an etching process through which insulating material between the conductive layers at the apertured regions isremoved via the apertures to form gaps (19) and leaving the second conductive layer (15) at each region supported in spaced relationship to the first conductive layer (12) by the insulating layer around the periphery of the region. The device may be used, for example, as a keypad or, with larger numbers of elements arranged in a row and column matrix, as a graphics tablet or display overlay and operated with a stylus. The device can conveniently be integrated with a liquid crystal display panel using a substrate of the panel as the support (14).

3. 发明申请

WO9607300A3 MANUFACTURE OF ELECTRONIC DEVICES COMPRISING THIN-FILM CIRCUITRY 审中-公开
标题翻译：包含薄膜电路的电子器件的制造
公开(公告)号：WO9607300A3
公开(公告)日：1996-05-02
申请号：PCT/IB9500559
申请日：1995-07-13
申请人： PHILIPS ELECTRONICS NV , PHILIPS NORDEN AB , PHILIPS ELECTRONICS UK LTD
发明人： YOUNG NIGEL DAVID
IPC分类号： H01L29/786 , G02F1/1362 , H01L21/77 , H01L21/82 , H01L21/84 , H05K
CPC分类号： H01L27/1214 , G02F1/136204
摘要： In the manufacture of liquid-crystal display devices and other large-area electronics devices, electrostatic discharge damage (ESD) of tracks and other thin-film circuit elements can result during ion implantation and/or during handling. This damage is avoided by connecting the thin-film circuitry in a charge leakage path with gateable TFT links (45). These links (45) are TFTs (45) with a common gate line (7) for applying a gate bias voltage to control current flow through the links, e.g to turn off the TFTs (45) during testing of the device circuit. In accordance with the present invention the gateable links (45) in the leakage path are removed simultaneously by applying a sufficiently high gate bias (Vg2) to the common gate line (7) to break the links (45) by evaporating at least the channel regions (6) of the TFTs. A suitable thin-film structure is chosen for the TFTs (45) to facilitate evaporating their channel regions (6) in this manner. The TFTs (45) may have a very thin gate dielectric layer (8), and a channel region (6) which is narrowed in the area of overlap with the gate (7). An over-layer 44 may protect the device circuitry from debris resulting from the blowing the links (45). This protective layer (44) may have windows (42) which expose the gateable links (45).

4. 发明申请

WO9528001A3 MANUFACTURE OF ELECTRONIC DEVICES COMPRISING THIN-FILM TRANSISTORS 审中-公开
标题翻译：包含薄膜晶体管的电子器件的制造
公开(公告)号：WO9528001A3
公开(公告)日：1995-11-30
申请号：PCT/IB9500191
申请日：1995-03-21
申请人： PHILIPS ELECTRONICS NV , PHILIPS NORDEN AB , PHILIPS ELECTRONICS UK LTD
发明人： YOUNG NIGEL DAVID , AYRES JOHN RICHARD ALAN
IPC分类号： G02F1/1368 , H01L21/336 , H01L29/786 , H01L
CPC分类号： H01L29/66757 , G02F1/1368 , H01L29/78621
摘要： In the manufacture of a large-area electronic device, a TFT of improved lifetime stability results from the inclusion of a field-relief region (22) (compare with LDD, lightly doped drain) which is of lower doping concentration than the drain region (12) and which is formed in an area (2) of lateral separation between the channel region (21) and the drain region (22). An energy beam (40), e.g. from an excimer laser, is used to provide the field-relief region (22), by laterally diffusing the doping concentration of the drain region (12) along an area (2) of the semiconductor film (20) significantly larger than the thickness of the semiconductor film (20). The laterally-diffused low-doping profile near the channel region (21) increases progressively along the current path to the drain region (12) so avoiding the creation of areas of high field in the separation area (2).

5. 发明申请

WO9803934A3 CAPACITIVE SENSING ARRAY DEVICE 审中-公开
标题翻译：电容式感应阵列装置
公开(公告)号：WO9803934A3
公开(公告)日：1998-03-19
申请号：PCT/IB9700878
申请日：1997-07-15
申请人： PHILIPS ELECTRONICS NV , PHILIPS NORDEN AB
发明人： YOUNG NIGEL DAVID
IPC分类号： A61B5/117 , G01B7/28 , G06F3/033 , G06F3/044 , G06K11/06
CPC分类号： G06F3/044
摘要： A capacitive sensing array device, such as a fingerprint sensing device, comprises an array of individual sensing electrodes (14) covered by a layer of insulating material (40) defining surface on which a person's finger is placed, each sensing electrode, its overlying fingerprint portion and intervening insulating layer providing a capacitance in operation. The sensing electrodes are of chromium and the covering insulating material comprises a thin layer of chromium oxide which offers excellent scratch resistance and can be formed conveniently by oxidation of a surface region of the sensing electrodes. In a row and column array, address lines (18) extending between rows of electrodes (14) may also comprise chromium and be covered by chromium oxide. Preferably, the sensing electrodes and address lines are defined from a common deposited chromium layer. 00000
摘要翻译：诸如指纹感测装置的电容式感测阵列装置包括由限定了人的手指放置在其上的绝缘材料层（40）覆盖的各个感测电极（14）的阵列，每个感测电极，其上覆的指纹部分和中间绝缘层在操作中提供电容。检测电极为铬，覆盖绝缘材料包括薄层的氧化铬，其提供优异的耐擦伤性，并且可以通过感测电极的表面区域的氧化方便地形成。在行和列阵列中，在电极（14）的行之间延伸的地址线（18）还可以包括铬并被氧化铬覆盖。优选地，感测电极和地址线由公共沉积的铬层限定。 00000

6. 发明申请

WO9618194A3 SEMICONDUCTOR MEMORY WITH NON-VOLATILE MEMORY TRANSEMICONDUCTOR MEMORY WITH NON-VOLATILE MEMORY TRANSISTOR SISTOR 审中-公开
标题翻译：具有非易失性存储器晶体管SISTOR的非易失性存储器超导体存储器的半导体存储器
公开(公告)号：WO9618194A3
公开(公告)日：1997-04-03
申请号：PCT/IB9500949
申请日：1995-11-02
申请人： PHILIPS ELECTRONICS NV , PHILIPS NORDEN AB
发明人： YOUNG NIGEL DAVID
IPC分类号： G11C17/00 , G11C16/04 , H01L21/8247 , H01L27/112 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： G11C16/0433 , H01L27/112
摘要： With a semiconductor memory cell (particularly but not exclusively in a thin-film device) having a non-volatile memory transistor (Tm) as a driver transistor, the invention permits an adequate difference in output signal (I) to be derived from the cell for the different states of the memory transistor (in spite of poor transistor characteristics) thereby permitting the assembly of a large number of such memory cells in an array (100). Each memory cell includes a load (Tl) driven by the non-volatile memory transistor (Tm). In the different memory states of the memory transistor (Tm), a difference in signal occurs at a node (30) between the memory transistor (Tm) and the load (Tl). Each cell also includes a switch (To) which is coupled to the node (30) and switched from one output state to another by the signal at the node (30). The output state of the switch (To) provides the output signal (l) from the cell. Such an arrangement in accordance with the invention permits the memory transistor (Tm) and the output switch (To) to be optimised for their respective memory function and output function. The memory transistor may be of the dielectric-storage type (MNOST) or of the floating-gate type. In a thin-film circuit memory, the output switch may be a thin-film transistor (To) or a thin-film diode.

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