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1. 外观设计

JPD1698948S Folding box 失效
公开(公告)号：JPD1698948S
公开(公告)日：2021-11-08
申请号：JPD2020502165
申请人： Bo Kyoung SONG , Jae Ho SONG , Won Seok SONG
设计人： Jae Ho SONG Won Seok SONG Bo Kyoung SONG

2. 外观设计

JPD1683483S Folding box 失效
公开(公告)号：JPD1683483S
公开(公告)日：2021-04-19
申请号：JPD2020500991
申请人： Won Seok Song , Jae Ho Song , Bo Kyoung Song
设计人： Bo Kyoung Song Won Seok Song Jae Ho Song

3. 外观设计

JPD1679622S folding cart for carrying 失效
公开(公告)号：JPD1679622S
公开(公告)日：2021-02-22
申请号：JPD2020500992
申请人： Won Seok Song , Jae Ho Song , Bo Kyoung Song
设计人： Won Seok Song Jae Ho Song Bo Kyoung Song

4. 外观设计

USD961930S1 Folding box 有权
公开(公告)号：USD961930S1
公开(公告)日：2022-08-30
申请号：US35511534
申请日：2020-09-12
申请人： Won Seok Song , Jae Ho Song , Bo Kyoung Song
设计人： Won Seok Song , Jae Ho Song , Bo Kyoung Song

5. 发明申请

US20210261295A1 FOLDABLE BOX 有权
公开(公告)号：US20210261295A1
公开(公告)日：2021-08-26
申请号：US16987084
申请日：2020-08-06
申请人： Jae Ho SONG , Won Seok SONG , Bo Kyoung SONG
发明人： Jae Ho SONG , Won Seok SONG , Bo Kyoung SONG
IPC分类号： B65D21/08 , B65D25/20 , B65D25/30 , B65D21/02
摘要： Provided is a foldable box having a left part and a right part, the left and right parts which include a pair of left auxiliary plates and a pair of right auxiliary plates, respectively, and most of which is made of a hard material, and therefore, it is possible to protect an item stored therein from an external impact and easily fold or unfold the foldable box, thereby maximizing convenience of storage and use.

6. 发明申请

US20200207393A1 FOLDING HANDCART 审中-公开
公开(公告)号：US20200207393A1
公开(公告)日：2020-07-02
申请号：US16268904
申请日：2019-02-06
申请人： Jae Ho SONG , Won Seok SONG , Bo Kyoung SONG
发明人： Jae Ho SONG , Won Seok SONG , Bo Kyoung SONG
IPC分类号： B62B3/02 , B62B5/06
摘要： A folding handcart includes: a main body provided with a supporter configured to extend vertically from a lower portion thereof; and a loading plate provided with at least one loading plate wheel unit, connected to the supporter of the main body through a hinge unit, folded while being rotated toward the main body by the hinge unit, and stowing an article or a folding box, wherein, when the loading plate is folded while being rotated toward the main body, a predetermined stowing space is provided between the main body and the loading plate in accordance with an area of the supporter such that the folding box is folded and stowed therein.

7. 发明申请

US20110204468A1 Image sensor and method of manufacturing the same 审中-公开
公开(公告)号：US20110204468A1
公开(公告)日：2011-08-25
申请号：US13064914
申请日：2011-04-26
申请人： Jae-ho Song , Chan Park , Young-hoon Park , Sang-il Jung , Jong-wook Hong , Keo-sung Park , Eun-soo Kim , Won-je Park , Jin-Hyeong Park , Dae-cheol Seong , Won-jeong Lee , Pu-ra Kim
发明人： Jae-ho Song , Chan Park , Young-hoon Park , Sang-il Jung , Jong-wook Hong , Keo-sung Park , Eun-soo Kim , Won-je Park , Jin-Hyeong Park , Dae-cheol Seong , Won-jeong Lee , Pu-ra Kim
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689
摘要： Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.

8. 发明申请

US20110163362A1 Methods of fabricating image sensors and image sensors fabricated thereby 有权
标题翻译：制造图像传感器和图像传感器的方法
公开(公告)号：US20110163362A1
公开(公告)日：2011-07-07
申请号：US13064176
申请日：2011-03-09
申请人： Won-je Park , Chan Park , Young-hoon Park , Jae-ho Song , Jong-wook Hong , Keo-sung Park
发明人： Won-je Park , Chan Park , Young-hoon Park , Jae-ho Song , Jong-wook Hong , Keo-sung Park
IPC分类号： H01L31/14
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14689
摘要： A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a pinned photodiode; primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the pinned photodiode. An image sensor may include the substrate; a transfer gate formed on the non-light-receiving region; a first dopant region in the light-receiving region; and a second dopant region formed on a surface of the light-receiving region.
摘要翻译：制造图像传感器的方法可以包括提供包括光接收和非光接收区域的基板; 在非光接收区域上形成多个栅极; 将第一导电型掺杂剂离子注入到光接收区域中以形成钉扎光电二极管的第一掺杂区域; 主要使用栅极作为第一掩模，将与第一导电类型掺杂剂不同的第二导电型掺杂剂离子注入基板的整个表面; 在门的两个侧壁上形成间隔物; 并且其次使用包括间隔物的多个栅极作为第二掩模将第二导电型掺杂剂离子注入到基板的整个表面中，以完成被钉扎的光电二极管的第二掺杂区域。图像传感器可以包括基板; 形成在非光接收区域上的传输门; 在所述光接收区域中的第一掺杂剂区域; 以及形成在光接收区域的表面上的第二掺杂剂区域。

9. 发明申请

US20070054434A1 METHODS OF FABRICATING AN IMAGE SENSOR 失效
标题翻译：制作图像传感器的方法
公开(公告)号：US20070054434A1
公开(公告)日：2007-03-08
申请号：US11464244
申请日：2006-08-14
申请人： Won-Je Park , Jae-Ho Song , Young-Hoon Park
发明人： Won-Je Park , Jae-Ho Song , Young-Hoon Park
IPC分类号： H01L21/00
CPC分类号： H01L27/14683 , H01L27/14603 , H01L27/14643
摘要： Provided are methods of fabricating an image sensor. Embodiments of such methods can include forming a first gate insulation layer in a first region of a semiconductor substrate and a first gate electrode layer, to cover the first gate insulation layer and forming a second gate insulation layer within a nitrogen enhanced atmosphere and a second gate electrode layer in a second region of the semiconductor substrate. The methods also include patterning the first gate electrode layer and the first gate insulation layer of the first region to form a first gate pattern and patterning the second gate electrode layer and the second gate insulation layer of the second region to form a second gate pattern.
摘要翻译：提供制造图像传感器的方法。这种方法的实施例可以包括在半导体衬底的第一区域和第一栅极电极层中形成第一栅极绝缘层，以覆盖第一栅极绝缘层并在氮气增强气氛中形成第二栅极绝缘层和第二栅极在半导体衬底的第二区域中的电极层。所述方法还包括图案化第一区域的第一栅极电极层和第一栅极绝缘层以形成第一栅极图案，并且使第二栅极电极层和第二栅极绝缘层图案化以形成第二栅极图案。

10. 发明申请

US20060157761A1 Image sensor with self-boosting and methods of operating and fabricating the same 有权
标题翻译：具有自增强功能的图像传感器及其操作和制造方法
公开(公告)号：US20060157761A1
公开(公告)日：2006-07-20
申请号：US11335925
申请日：2006-01-18
申请人： Young-Hoon Park , Won-Je Park , Tae-Seok Oh , Jae-Ho Song
发明人： Young-Hoon Park , Won-Je Park , Tae-Seok Oh , Jae-Ho Song
IPC分类号： H01L31/062
CPC分类号： H01L27/14609 , H01L27/14632 , H01L27/14656 , H01L27/14687 , H04N5/3597 , H04N5/3745
摘要： Disclosed is a image sensor (e.g., a CMOS image sensor) including pixels each having a transfer transistor and a drive transistor, in which the gate of at least one of the transistors has a boosting gate disposed over it comprised of a conductive film pattern with interposing an insulation film. Thus, a voltage applied to the boosting gate is capacitively coupled to at least one of the transfer gate of the transfer transistor and a drive gate of the drive transistor. The transfer gate is supplied with the sum of the transfer voltage and the boosting gate-coupling voltage as a result and there is no need for providing a high voltage generator for the image sensor. The dynamic range of operation may be enhanced if such a coupling voltage is applied to the drive gate of the drive transistor.
摘要翻译：公开了包括各自具有传输晶体管和驱动晶体管的像素的图像传感器（例如，CMOS图像传感器），其中至少一个晶体管的栅极具有设置在其上的升压栅极，该升压栅极包括导电膜图案，插入绝缘膜。因此，施加到升压栅极的电压电容耦合到传输晶体管的传输栅极和驱动晶体管的驱动栅极中的至少一个。因此，转移栅极被提供有转印电压和升压栅极耦合电压的总和，并且不需要为图像传感器提供高电压发生器。如果将这样的耦合电压施加到驱动晶体管的驱动栅极，则可以增强动态动作范围。

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