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1. 发明授权

US06858526B2 Methods of forming materials between conductive electrical components, and insulating materials 失效
标题翻译：在导电电气部件和绝缘材料之间形成材料的方法
公开(公告)号：US06858526B2
公开(公告)日：2005-02-22
申请号：US09820468
申请日：2001-03-28
申请人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
发明人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
IPC分类号： H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/4763 , H01L21/302
CPC分类号： H01L23/5222 , H01L21/02115 , H01L21/02118 , H01L21/02203 , H01L21/02274 , H01L21/02282 , H01L21/02337 , H01L21/02362 , H01L21/31695 , H01L21/7682 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical component comprising: a) partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. In another aspect, the invention includes a method of forming a material between a pair of conductive electrical components comprising the following steps: a) forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; b) forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and c) vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. In another aspect, the invention includes an insulating material adjacent a conductive electrical component, the insulating material comprising a matrix and at least one void within the matrix. In another aspect, the invention includes an insulating region between a pair of conductive electrical components comprising: a) a support member between the conductive electrical components, the support member not comprising a conductive interconnect; and b) at least one void between the support member and each of the pair of conductive electrical components.
摘要翻译：本发明包括在导电元件之间形成绝缘材料的方法。在一个方面，本发明包括形成邻近导电电气部件的材料的方法，该方法包括：a）部分蒸发物质以形成邻近导电电气部件的基体，所述基质在其内具有至少一个空隙。另一方面，本发明包括一种在一对导电电气部件之间形成材料的方法，包括以下步骤：a）在质量体内形成一对导电的电气部件，并由质量块的一部分分隔; b）在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及c）将所述物质的所述膨胀物蒸发至有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙的程度。在另一方面，本发明包括与导电电气部件相邻的绝缘材料，所述绝缘材料包含基体和所述基体内的至少一个空隙。在另一方面，本发明包括在一对导电电气部件之间的绝缘区域，包括：a）导电电气部件之间的支撑部件，所述支撑部件不包括导电互连; 以及b）所述支撑构件和所述一对导电电气部件中的每一个之间的至少一个空隙。

2. 发明授权

US07112542B2 Methods of forming materials between conductive electrical components, and insulating materials 有权
标题翻译：在导电电气部件和绝缘材料之间形成材料的方法
公开(公告)号：US07112542B2
公开(公告)日：2006-09-26
申请号：US10330719
申请日：2002-12-27
申请人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
发明人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
IPC分类号： H01L21/31 , H01L21/469 , H01L21/76
CPC分类号： H01L21/7682 , H01L21/02115 , H01L21/02118 , H01L21/02167 , H01L21/02203 , H01L21/02274 , H01L21/02282 , H01L21/02362 , H01L21/31695 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L23/5222 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , Y10T428/12014 , Y10T428/24149 , Y10T428/249921 , Y10T428/25 , Y10T428/259 , H01L2924/00
摘要： Methods of forming insulating materials between conductive elements include forming a material adjacent a conductive electrical component comprising: partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. Other methods include forming a material between a pair of conductive electrical components comprising: forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. Some embodiments include an insulating material adjacent a conductive electrical component, such material comprising a matrix and at least one void within the matrix.
摘要翻译：在导电元件之间形成绝缘材料的方法包括形成邻近导电电气部件的材料，该材料包括：部分蒸发物质以形成邻近导电电气部件的基体，所述基体在其内具有至少一个空隙。其他方法包括在一对导电电气部件之间形成材料，包括：在一个质量块内形成一对导电的电气部件，并由该质量块的一大片分隔; 在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及使所述质量块的膨胀程度有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙。一些实施例包括邻近导电电气部件的绝缘材料，这种材料包括基质和基质内的至少一个空隙。

3. 发明授权

US07262503B2 Semiconductor constructions 有权
标题翻译：半导体结构
公开(公告)号：US07262503B2
公开(公告)日：2007-08-28
申请号：US11026822
申请日：2004-12-29
申请人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
发明人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
IPC分类号： H01L23/48
CPC分类号： H01L23/5222 , H01L21/02115 , H01L21/02118 , H01L21/02203 , H01L21/02274 , H01L21/02282 , H01L21/02337 , H01L21/02362 , H01L21/31695 , H01L21/7682 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical component comprising: a) partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. In another aspect, the invention includes a method of forming a material between a pair of conductive electrical components comprising the following steps: a) forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; b) forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and c) vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. In another aspect, the invention includes an insulating material adjacent a conductive electrical component, the insulating material comprising a matrix and at least one void within the matrix. In another aspect, the invention includes an insulating region between a pair of conductive electrical components comprising: a) a support member between the conductive electrical components, the support member not comprising a conductive interconnect; and b) at least one void between the support member and each of the pair of conductive electrical components.
摘要翻译：本发明包括在导电元件之间形成绝缘材料的方法。在一个方面，本发明包括形成邻近导电电气部件的材料的方法，该方法包括：a）部分蒸发物质以形成邻近导电电气部件的基体，所述基质在其内具有至少一个空隙。另一方面，本发明包括一种在一对导电电气部件之间形成材料的方法，包括以下步骤：a）在质量体内形成一对导电的电气部件，并由质量块的一部分分隔; b）在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及c）将所述物质的所述膨胀物蒸发至有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙的程度。在另一方面，本发明包括与导电电气部件相邻的绝缘材料，所述绝缘材料包含基体和所述基体内的至少一个空隙。在另一方面，本发明包括在一对导电电气部件之间的绝缘区域，包括：a）导电电气部件之间的支撑部件，所述支撑部件不包括导电互连; 以及b）所述支撑构件和所述一对导电电气部件中的每一个之间的至少一个空隙。

4. 发明授权

US06501179B2 Constructions comprising insulative materials 有权
标题翻译：建筑物包括绝缘材料
公开(公告)号：US06501179B2
公开(公告)日：2002-12-31
申请号：US09921861
申请日：2001-08-02
申请人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
发明人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
IPC分类号： H01L23485
CPC分类号： H01L21/7682 , H01L21/02115 , H01L21/02118 , H01L21/02167 , H01L21/02203 , H01L21/02274 , H01L21/02282 , H01L21/02362 , H01L21/31695 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L23/5222 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , Y10T428/12014 , Y10T428/24149 , Y10T428/249921 , Y10T428/25 , Y10T428/259 , H01L2924/00
摘要： The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical component comprising: a) partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. In another aspect, the invention includes a method of forming a material between a pair of conductive electrical components comprising the following steps: a) forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; b) forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and c) vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. In another aspect, the invention includes an insulating material adjacent a conductive electrical component, the insulating material comprising a matrix and at least one void within the matrix. In another aspect, the invention includes an insulating region between a pair of conductive electrical components comprising: a) a support member between the conductive electrical components, the support member not comprising a conductive interconnect; and b) at least one void between the support member and each of the pair of conductive electrical components.
摘要翻译：本发明包括在导电元件之间形成绝缘材料的方法。在一个方面，本发明包括形成邻近导电电气部件的材料的方法，该方法包括：a）部分蒸发物质以形成邻近导电电气部件的基体，所述基质在其内具有至少一个空隙。另一方面，本发明包括一种在一对导电电气部件之间形成材料的方法，包括以下步骤：a）在质量体内形成一对导电的电气部件，并由质量块的一部分分隔; b）在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及c）将所述物质的所述膨胀物蒸发至有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙的程度。在另一方面，本发明包括与导电电气部件相邻的绝缘材料，所述绝缘材料包含基体和所述基体内的至少一个空隙。在另一方面，本发明包括在一对导电电气部件之间的绝缘区域，包括：a）导电电气部件之间的支撑部件，所述支撑部件不包括导电互连; 以及b）所述支撑构件和所述一对导电电气部件中的每一个之间的至少一个空隙。

5. 发明授权

US06812160B2 Methods of forming materials between conductive electrical components, and insulating materials 失效
标题翻译：在导电电气部件和绝缘材料之间形成材料的方法
公开(公告)号：US06812160B2
公开(公告)日：2004-11-02
申请号：US09976624
申请日：2001-10-12
申请人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
发明人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
IPC分类号： H01L2131
CPC分类号： H01L21/7682 , H01L21/02115 , H01L21/02118 , H01L21/02167 , H01L21/02203 , H01L21/02274 , H01L21/02282 , H01L21/02362 , H01L21/31695 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L23/5222 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , Y10T428/12014 , Y10T428/24149 , Y10T428/249921 , Y10T428/25 , Y10T428/259 , H01L2924/00
摘要： Methods of forming insulating materials between conductive elements include forming a material adjacent a conductive electrical component comprising: partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. Other methods include forming a material between a pair of conductive electrical components comprising: forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. Some embodiments include an insulating material adjacent a conductive electrical component, such material comprising a matrix and at least one void within the matrix.
摘要翻译：在导电元件之间形成绝缘材料的方法包括形成邻近导电电气部件的材料，该材料包括：部分蒸发物质以形成邻近导电电气部件的基体，所述基体在其内具有至少一个空隙。其他方法包括在一对导电电气部件之间形成材料，包括：在一个质量块内形成一对导电的电气部件，并由该质量块的一大片分隔; 在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及使所述质量块的膨胀程度有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙。一些实施例包括邻近导电电气部件的绝缘材料，这种材料包括基质和基质内的至少一个空隙。

6. 发明授权

US06333556B1 Insulating materials 失效
标题翻译：绝缘材料
公开(公告)号：US06333556B1
公开(公告)日：2001-12-25
申请号：US08947847
申请日：1997-10-09
申请人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
发明人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
IPC分类号： H01L23485
CPC分类号： H01L21/7682 , H01L21/02115 , H01L21/02118 , H01L21/02167 , H01L21/02203 , H01L21/02274 , H01L21/02282 , H01L21/02362 , H01L21/31695 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L23/5222 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , Y10T428/12014 , Y10T428/24149 , Y10T428/249921 , Y10T428/25 , Y10T428/259 , H01L2924/00
摘要： The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical component comprising: a) partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. In another aspect, the invention includes a method of forming a material between a pair of conductive electrical components comprising the following steps: a) forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; b) forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and c) vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. In another aspect, the invention includes an insulating material adjacent a conductive electrical component, the insulating material comprising a matrix and at least one void within the matrix. In another aspect, the invention includes an insulating region between a pair of conductive electrical components comprising: a) a support member between the conductive electrical components, the support member not comprising a conductive interconnect; and b) at least one void between the support member and each of the pair of conductive electrical components.
摘要翻译：本发明包括在导电元件之间形成绝缘材料的方法。在一个方面，本发明包括形成邻近导电电气部件的材料的方法，该方法包括：a）部分蒸发物质以形成邻近导电电气部件的基体，所述基质在其内具有至少一个空隙。另一方面，本发明包括一种在一对导电电气部件之间形成材料的方法，包括以下步骤：a）在质量体内形成一对导电的电气部件，并由质量块的一部分分隔; b）在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及c）将所述物质的所述膨胀物蒸发至有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙的程度。在另一方面，本发明包括与导电电气部件相邻的绝缘材料，所述绝缘材料包含基体和所述基体内的至少一个空隙。在另一方面，本发明包括在一对导电电气部件之间的绝缘区域，包括：a）导电电气部件之间的支撑部件，所述支撑部件不包括导电互连; 以及b）所述支撑构件和所述一对导电电气部件中的每一个之间的至少一个空隙。

7. 发明授权

US06313046B1 Method of forming materials between conductive electrical components, and insulating materials 失效
标题翻译：在导电电气部件和绝缘材料之间形成材料的方法
公开(公告)号：US06313046B1
公开(公告)日：2001-11-06
申请号：US09115339
申请日：1998-07-14
申请人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
发明人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
IPC分类号： H01L2131
CPC分类号： H01L21/7682 , H01L21/02115 , H01L21/02118 , H01L21/02167 , H01L21/02203 , H01L21/02274 , H01L21/02282 , H01L21/02362 , H01L21/31695 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L23/5222 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , Y10T428/12014 , Y10T428/24149 , Y10T428/249921 , Y10T428/25 , Y10T428/259 , H01L2924/00
摘要： The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical component comprising: a) partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. In another aspect, the invention includes a method of forming a material between a pair of conductive electrical components comprising the following steps: a) forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; b) forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and c) vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. In another aspect, the invention includes an insulating material adjacent a conductive electrical component, the insulating material comprising a matrix and at least one void within the matrix. In another aspect, the invention includes an insulating region between a pair of conductive electrical components comprising: a) a support member between the conductive electrical components, the support member not comprising a conductive interconnect; and b) at least one void between the support member and each of the pair of conductive electrical components.
摘要翻译：本发明涵盖在导电元件之间形成绝缘材料的方法。在一个方面，本发明包括形成邻近导电电气部件的材料的方法，该方法包括：a）部分蒸发物质以形成邻近导电电气部件的基体，所述基质在其内具有至少一个空隙。另一方面，本发明包括一种在一对导电电气部件之间形成材料的方法，包括以下步骤：a）在质量体内形成一对导电的电气部件，并由质量块的一部分分隔; b）在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及c）将所述物质的所述膨胀物蒸发至有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙的程度。在另一方面，本发明包括与导电电气部件相邻的绝缘材料，所述绝缘材料包含基体和所述基体内的至少一个空隙。在另一方面，本发明包括在一对导电电气部件之间的绝缘区域，包括：a）导电电气部件之间的支撑部件，所述支撑部件不包括导电互连; 以及b）所述支撑构件和所述一对导电电气部件中的每一个之间的至少一个空隙。

8. 发明申请

US20050121794A1 Semiconductor constructions 有权
标题翻译：半导体结构
公开(公告)号：US20050121794A1
公开(公告)日：2005-06-09
申请号：US11026822
申请日：2004-12-29
申请人： Werner Juengling , Kirk Prall , Ravi Iyer , Gurtej Sandhu , Guy Blalock
发明人： Werner Juengling , Kirk Prall , Ravi Iyer , Gurtej Sandhu , Guy Blalock
IPC分类号： H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , H01L29/40
CPC分类号： H01L23/5222 , H01L21/02115 , H01L21/02118 , H01L21/02203 , H01L21/02274 , H01L21/02282 , H01L21/02337 , H01L21/02362 , H01L21/31695 , H01L21/7682 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical component comprising: a) partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. In another aspect, the invention includes a method of forming a material between a pair of conductive electrical components comprising the following steps: a) forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; b) forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and c) vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. In another aspect, the invention includes an insulating material adjacent a conductive electrical component, the insulating material comprising a matrix and at least one void within the matrix. In another aspect, the invention includes an insulating region between a pair of conductive electrical components comprising: a) a support member between the conductive electrical components, the support member not comprising a conductive interconnect; and b) at least one void between the support member and each of the pair of conductive electrical components.
摘要翻译：本发明包括在导电元件之间形成绝缘材料的方法。在一个方面，本发明包括形成邻近导电电气部件的材料的方法，该方法包括：a）部分蒸发物质以形成邻近导电电气部件的基体，所述基质在其内具有至少一个空隙。另一方面，本发明包括一种在一对导电电气部件之间形成材料的方法，包括以下步骤：a）在质量体内形成一对导电的电气部件，并由质量块的一部分分隔; b）在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及c）将所述物质的所述膨胀物蒸发至有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙的程度。在另一方面，本发明包括与导电电气部件相邻的绝缘材料，所述绝缘材料包含基体和所述基体内的至少一个空隙。在另一方面，本发明包括在一对导电电气部件之间的绝缘区域，包括：a）导电电气部件之间的支撑部件，所述支撑部件不包括导电互连; 以及b）所述支撑构件和所述一对导电电气部件中的每一个之间的至少一个空隙。

9. 发明授权

US06827824B1 Enhanced collimated deposition 失效
标题翻译：增强准直沉积
公开(公告)号：US06827824B1
公开(公告)日：2004-12-07
申请号：US08631465
申请日：1996-04-12
申请人： Guy Blalock , Gurtej S. Sandhu
发明人： Guy Blalock , Gurtej S. Sandhu
IPC分类号： C23C1435
CPC分类号： C23C14/345 , C23C14/351 , C23C14/354 , H01J37/32339 , H01J2237/3327
摘要： An apparatus for film deposition onto a substrate from a source of target particles including a plasma generator creating a plasma that isotropically accelerates the target particles towards the substrate. A secondary ionizer creates a secondary ionization zone between the plasma and the substrate support. The isotropically accelerated target particles are ionized as they pass through the secondary ionization zone. A static field generator creates a static field between the secondary ionization zone and the substrate accelerating the ionized target particles along a substantially collimated trajectory perpendicular to the substrate. Optionally, a collimator is included between the secondary ionization zone and the substrate and biased to focus and accelerate the collimated target particles.
摘要翻译：一种用于从包括等离子体发生器的目标粒子源在基底上沉积膜的装置，其产生等离子体，所述等离子体将目标颗粒各向同性地加速到衬底。二次电离器在等离子体和衬底支撑件之间产生二次电离区。各向同性加速的目标颗粒在通过二次电离区时被电离。静电场发生器在二次电离区和基板之间产生静电场，该静电场沿垂直于衬底的基本上准直的轨迹加速电离的靶颗粒。可选地，准直仪包括在二次电离区和衬底之间，并被偏置以聚焦并加速准直的靶颗粒。

10. 发明授权

US07569468B2 Method for forming a floating gate memory with polysilicon local interconnects 失效
标题翻译：用于形成具有多晶硅局部互连的浮动栅极存储器的方法
公开(公告)号：US07569468B2
公开(公告)日：2009-08-04
申请号：US11217624
申请日：2005-09-01
申请人： Chun Chen , Guy Blalock , Graham Wolstenholme , Kirk Prall
发明人： Chun Chen , Guy Blalock , Graham Wolstenholme , Kirk Prall
IPC分类号： H01L21/3205
CPC分类号： H01L27/11521 , H01L21/76895 , H01L27/115
摘要： Methods and apparatus are described to facilitate forming memory devices with low resistance polysilicon local interconnects that allow a smaller array feature size and therefore facilitate forming arrays of a denser array format. Embodiments of the present invention are formed utilizing a wet etch process that has a high selectivity, allowing the deposition and etching of polysilicon local interconnects to source regions of array transistors. By providing for a local interconnect of polysilicon, a smaller source region and/or drain region can also be utilized, further decreasing the required word line spacing. Low resistance polysilicon local source interconnects can also couple to an increased number of memory cells, thereby reducing the number of contacts made to an array ground.
摘要翻译：描述了方法和装置以便于形成具有低电阻多晶硅局部互连的存储器件，其允许更小的阵列特征尺寸，并因此促进形成更密集阵列格式的阵列。使用具有高选择性的湿蚀刻工艺形成本发明的实施例，允许将多晶硅局部互连件沉积和蚀刻到阵列晶体管的源极区域。通过提供多晶硅的局部互连，还可以利用更小的源极区和/或漏极区，进一步减少所需的字线间隔。低电阻多晶硅本地源极互连还可以耦合到增加数量的存储器单元，从而减少对阵列地阵进行的触点的数量。

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