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1. 发明授权

US06858526B2 Methods of forming materials between conductive electrical components, and insulating materials 失效
标题翻译：在导电电气部件和绝缘材料之间形成材料的方法
公开(公告)号：US06858526B2
公开(公告)日：2005-02-22
申请号：US09820468
申请日：2001-03-28
申请人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
发明人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
IPC分类号： H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/4763 , H01L21/302
CPC分类号： H01L23/5222 , H01L21/02115 , H01L21/02118 , H01L21/02203 , H01L21/02274 , H01L21/02282 , H01L21/02337 , H01L21/02362 , H01L21/31695 , H01L21/7682 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical component comprising: a) partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. In another aspect, the invention includes a method of forming a material between a pair of conductive electrical components comprising the following steps: a) forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; b) forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and c) vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. In another aspect, the invention includes an insulating material adjacent a conductive electrical component, the insulating material comprising a matrix and at least one void within the matrix. In another aspect, the invention includes an insulating region between a pair of conductive electrical components comprising: a) a support member between the conductive electrical components, the support member not comprising a conductive interconnect; and b) at least one void between the support member and each of the pair of conductive electrical components.
摘要翻译：本发明包括在导电元件之间形成绝缘材料的方法。在一个方面，本发明包括形成邻近导电电气部件的材料的方法，该方法包括：a）部分蒸发物质以形成邻近导电电气部件的基体，所述基质在其内具有至少一个空隙。另一方面，本发明包括一种在一对导电电气部件之间形成材料的方法，包括以下步骤：a）在质量体内形成一对导电的电气部件，并由质量块的一部分分隔; b）在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及c）将所述物质的所述膨胀物蒸发至有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙的程度。在另一方面，本发明包括与导电电气部件相邻的绝缘材料，所述绝缘材料包含基体和所述基体内的至少一个空隙。在另一方面，本发明包括在一对导电电气部件之间的绝缘区域，包括：a）导电电气部件之间的支撑部件，所述支撑部件不包括导电互连; 以及b）所述支撑构件和所述一对导电电气部件中的每一个之间的至少一个空隙。

2. 发明授权

US07112542B2 Methods of forming materials between conductive electrical components, and insulating materials 有权
标题翻译：在导电电气部件和绝缘材料之间形成材料的方法
公开(公告)号：US07112542B2
公开(公告)日：2006-09-26
申请号：US10330719
申请日：2002-12-27
申请人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
发明人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
IPC分类号： H01L21/31 , H01L21/469 , H01L21/76
CPC分类号： H01L21/7682 , H01L21/02115 , H01L21/02118 , H01L21/02167 , H01L21/02203 , H01L21/02274 , H01L21/02282 , H01L21/02362 , H01L21/31695 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L23/5222 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , Y10T428/12014 , Y10T428/24149 , Y10T428/249921 , Y10T428/25 , Y10T428/259 , H01L2924/00
摘要： Methods of forming insulating materials between conductive elements include forming a material adjacent a conductive electrical component comprising: partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. Other methods include forming a material between a pair of conductive electrical components comprising: forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. Some embodiments include an insulating material adjacent a conductive electrical component, such material comprising a matrix and at least one void within the matrix.
摘要翻译：在导电元件之间形成绝缘材料的方法包括形成邻近导电电气部件的材料，该材料包括：部分蒸发物质以形成邻近导电电气部件的基体，所述基体在其内具有至少一个空隙。其他方法包括在一对导电电气部件之间形成材料，包括：在一个质量块内形成一对导电的电气部件，并由该质量块的一大片分隔; 在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及使所述质量块的膨胀程度有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙。一些实施例包括邻近导电电气部件的绝缘材料，这种材料包括基质和基质内的至少一个空隙。

3. 发明授权

US06812160B2 Methods of forming materials between conductive electrical components, and insulating materials 失效
标题翻译：在导电电气部件和绝缘材料之间形成材料的方法
公开(公告)号：US06812160B2
公开(公告)日：2004-11-02
申请号：US09976624
申请日：2001-10-12
申请人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
发明人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
IPC分类号： H01L2131
CPC分类号： H01L21/7682 , H01L21/02115 , H01L21/02118 , H01L21/02167 , H01L21/02203 , H01L21/02274 , H01L21/02282 , H01L21/02362 , H01L21/31695 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L23/5222 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , Y10T428/12014 , Y10T428/24149 , Y10T428/249921 , Y10T428/25 , Y10T428/259 , H01L2924/00
摘要： Methods of forming insulating materials between conductive elements include forming a material adjacent a conductive electrical component comprising: partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. Other methods include forming a material between a pair of conductive electrical components comprising: forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. Some embodiments include an insulating material adjacent a conductive electrical component, such material comprising a matrix and at least one void within the matrix.
摘要翻译：在导电元件之间形成绝缘材料的方法包括形成邻近导电电气部件的材料，该材料包括：部分蒸发物质以形成邻近导电电气部件的基体，所述基体在其内具有至少一个空隙。其他方法包括在一对导电电气部件之间形成材料，包括：在一个质量块内形成一对导电的电气部件，并由该质量块的一大片分隔; 在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及使所述质量块的膨胀程度有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙。一些实施例包括邻近导电电气部件的绝缘材料，这种材料包括基质和基质内的至少一个空隙。

4. 发明授权

US06333556B1 Insulating materials 失效
标题翻译：绝缘材料
公开(公告)号：US06333556B1
公开(公告)日：2001-12-25
申请号：US08947847
申请日：1997-10-09
申请人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
发明人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
IPC分类号： H01L23485
CPC分类号： H01L21/7682 , H01L21/02115 , H01L21/02118 , H01L21/02167 , H01L21/02203 , H01L21/02274 , H01L21/02282 , H01L21/02362 , H01L21/31695 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L23/5222 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , Y10T428/12014 , Y10T428/24149 , Y10T428/249921 , Y10T428/25 , Y10T428/259 , H01L2924/00
摘要： The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical component comprising: a) partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. In another aspect, the invention includes a method of forming a material between a pair of conductive electrical components comprising the following steps: a) forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; b) forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and c) vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. In another aspect, the invention includes an insulating material adjacent a conductive electrical component, the insulating material comprising a matrix and at least one void within the matrix. In another aspect, the invention includes an insulating region between a pair of conductive electrical components comprising: a) a support member between the conductive electrical components, the support member not comprising a conductive interconnect; and b) at least one void between the support member and each of the pair of conductive electrical components.
摘要翻译：本发明包括在导电元件之间形成绝缘材料的方法。在一个方面，本发明包括形成邻近导电电气部件的材料的方法，该方法包括：a）部分蒸发物质以形成邻近导电电气部件的基体，所述基质在其内具有至少一个空隙。另一方面，本发明包括一种在一对导电电气部件之间形成材料的方法，包括以下步骤：a）在质量体内形成一对导电的电气部件，并由质量块的一部分分隔; b）在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及c）将所述物质的所述膨胀物蒸发至有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙的程度。在另一方面，本发明包括与导电电气部件相邻的绝缘材料，所述绝缘材料包含基体和所述基体内的至少一个空隙。在另一方面，本发明包括在一对导电电气部件之间的绝缘区域，包括：a）导电电气部件之间的支撑部件，所述支撑部件不包括导电互连; 以及b）所述支撑构件和所述一对导电电气部件中的每一个之间的至少一个空隙。

5. 发明授权

US06313046B1 Method of forming materials between conductive electrical components, and insulating materials 失效
标题翻译：在导电电气部件和绝缘材料之间形成材料的方法
公开(公告)号：US06313046B1
公开(公告)日：2001-11-06
申请号：US09115339
申请日：1998-07-14
申请人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
发明人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
IPC分类号： H01L2131
CPC分类号： H01L21/7682 , H01L21/02115 , H01L21/02118 , H01L21/02167 , H01L21/02203 , H01L21/02274 , H01L21/02282 , H01L21/02362 , H01L21/31695 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L23/5222 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , Y10T428/12014 , Y10T428/24149 , Y10T428/249921 , Y10T428/25 , Y10T428/259 , H01L2924/00
摘要： The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical component comprising: a) partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. In another aspect, the invention includes a method of forming a material between a pair of conductive electrical components comprising the following steps: a) forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; b) forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and c) vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. In another aspect, the invention includes an insulating material adjacent a conductive electrical component, the insulating material comprising a matrix and at least one void within the matrix. In another aspect, the invention includes an insulating region between a pair of conductive electrical components comprising: a) a support member between the conductive electrical components, the support member not comprising a conductive interconnect; and b) at least one void between the support member and each of the pair of conductive electrical components.
摘要翻译：本发明涵盖在导电元件之间形成绝缘材料的方法。在一个方面，本发明包括形成邻近导电电气部件的材料的方法，该方法包括：a）部分蒸发物质以形成邻近导电电气部件的基体，所述基质在其内具有至少一个空隙。另一方面，本发明包括一种在一对导电电气部件之间形成材料的方法，包括以下步骤：a）在质量体内形成一对导电的电气部件，并由质量块的一部分分隔; b）在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及c）将所述物质的所述膨胀物蒸发至有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙的程度。在另一方面，本发明包括与导电电气部件相邻的绝缘材料，所述绝缘材料包含基体和所述基体内的至少一个空隙。在另一方面，本发明包括在一对导电电气部件之间的绝缘区域，包括：a）导电电气部件之间的支撑部件，所述支撑部件不包括导电互连; 以及b）所述支撑构件和所述一对导电电气部件中的每一个之间的至少一个空隙。

6. 发明授权

US07262503B2 Semiconductor constructions 有权
标题翻译：半导体结构
公开(公告)号：US07262503B2
公开(公告)日：2007-08-28
申请号：US11026822
申请日：2004-12-29
申请人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
发明人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
IPC分类号： H01L23/48
CPC分类号： H01L23/5222 , H01L21/02115 , H01L21/02118 , H01L21/02203 , H01L21/02274 , H01L21/02282 , H01L21/02337 , H01L21/02362 , H01L21/31695 , H01L21/7682 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical component comprising: a) partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. In another aspect, the invention includes a method of forming a material between a pair of conductive electrical components comprising the following steps: a) forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; b) forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and c) vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. In another aspect, the invention includes an insulating material adjacent a conductive electrical component, the insulating material comprising a matrix and at least one void within the matrix. In another aspect, the invention includes an insulating region between a pair of conductive electrical components comprising: a) a support member between the conductive electrical components, the support member not comprising a conductive interconnect; and b) at least one void between the support member and each of the pair of conductive electrical components.
摘要翻译：本发明包括在导电元件之间形成绝缘材料的方法。在一个方面，本发明包括形成邻近导电电气部件的材料的方法，该方法包括：a）部分蒸发物质以形成邻近导电电气部件的基体，所述基质在其内具有至少一个空隙。另一方面，本发明包括一种在一对导电电气部件之间形成材料的方法，包括以下步骤：a）在质量体内形成一对导电的电气部件，并由质量块的一部分分隔; b）在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及c）将所述物质的所述膨胀物蒸发至有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙的程度。在另一方面，本发明包括与导电电气部件相邻的绝缘材料，所述绝缘材料包含基体和所述基体内的至少一个空隙。在另一方面，本发明包括在一对导电电气部件之间的绝缘区域，包括：a）导电电气部件之间的支撑部件，所述支撑部件不包括导电互连; 以及b）所述支撑构件和所述一对导电电气部件中的每一个之间的至少一个空隙。

7. 发明授权

US06501179B2 Constructions comprising insulative materials 有权
标题翻译：建筑物包括绝缘材料
公开(公告)号：US06501179B2
公开(公告)日：2002-12-31
申请号：US09921861
申请日：2001-08-02
申请人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
发明人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
IPC分类号： H01L23485
CPC分类号： H01L21/7682 , H01L21/02115 , H01L21/02118 , H01L21/02167 , H01L21/02203 , H01L21/02274 , H01L21/02282 , H01L21/02362 , H01L21/31695 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L23/5222 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , Y10T428/12014 , Y10T428/24149 , Y10T428/249921 , Y10T428/25 , Y10T428/259 , H01L2924/00
摘要： The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical component comprising: a) partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. In another aspect, the invention includes a method of forming a material between a pair of conductive electrical components comprising the following steps: a) forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; b) forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and c) vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. In another aspect, the invention includes an insulating material adjacent a conductive electrical component, the insulating material comprising a matrix and at least one void within the matrix. In another aspect, the invention includes an insulating region between a pair of conductive electrical components comprising: a) a support member between the conductive electrical components, the support member not comprising a conductive interconnect; and b) at least one void between the support member and each of the pair of conductive electrical components.
摘要翻译：本发明包括在导电元件之间形成绝缘材料的方法。在一个方面，本发明包括形成邻近导电电气部件的材料的方法，该方法包括：a）部分蒸发物质以形成邻近导电电气部件的基体，所述基质在其内具有至少一个空隙。另一方面，本发明包括一种在一对导电电气部件之间形成材料的方法，包括以下步骤：a）在质量体内形成一对导电的电气部件，并由质量块的一部分分隔; b）在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及c）将所述物质的所述膨胀物蒸发至有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙的程度。在另一方面，本发明包括与导电电气部件相邻的绝缘材料，所述绝缘材料包含基体和所述基体内的至少一个空隙。在另一方面，本发明包括在一对导电电气部件之间的绝缘区域，包括：a）导电电气部件之间的支撑部件，所述支撑部件不包括导电互连; 以及b）所述支撑构件和所述一对导电电气部件中的每一个之间的至少一个空隙。

8. 发明申请

US20050121794A1 Semiconductor constructions 有权
标题翻译：半导体结构
公开(公告)号：US20050121794A1
公开(公告)日：2005-06-09
申请号：US11026822
申请日：2004-12-29
申请人： Werner Juengling , Kirk Prall , Ravi Iyer , Gurtej Sandhu , Guy Blalock
发明人： Werner Juengling , Kirk Prall , Ravi Iyer , Gurtej Sandhu , Guy Blalock
IPC分类号： H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , H01L29/40
CPC分类号： H01L23/5222 , H01L21/02115 , H01L21/02118 , H01L21/02203 , H01L21/02274 , H01L21/02282 , H01L21/02337 , H01L21/02362 , H01L21/31695 , H01L21/7682 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical component comprising: a) partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. In another aspect, the invention includes a method of forming a material between a pair of conductive electrical components comprising the following steps: a) forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; b) forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and c) vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. In another aspect, the invention includes an insulating material adjacent a conductive electrical component, the insulating material comprising a matrix and at least one void within the matrix. In another aspect, the invention includes an insulating region between a pair of conductive electrical components comprising: a) a support member between the conductive electrical components, the support member not comprising a conductive interconnect; and b) at least one void between the support member and each of the pair of conductive electrical components.
摘要翻译：本发明包括在导电元件之间形成绝缘材料的方法。在一个方面，本发明包括形成邻近导电电气部件的材料的方法，该方法包括：a）部分蒸发物质以形成邻近导电电气部件的基体，所述基质在其内具有至少一个空隙。另一方面，本发明包括一种在一对导电电气部件之间形成材料的方法，包括以下步骤：a）在质量体内形成一对导电的电气部件，并由质量块的一部分分隔; b）在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及c）将所述物质的所述膨胀物蒸发至有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙的程度。在另一方面，本发明包括与导电电气部件相邻的绝缘材料，所述绝缘材料包含基体和所述基体内的至少一个空隙。在另一方面，本发明包括在一对导电电气部件之间的绝缘区域，包括：a）导电电气部件之间的支撑部件，所述支撑部件不包括导电互连; 以及b）所述支撑构件和所述一对导电电气部件中的每一个之间的至少一个空隙。

9. 发明授权

US06822328B2 Integrated circuitry 有权
标题翻译：集成电路
公开(公告)号：US06822328B2
公开(公告)日：2004-11-23
申请号：US10229865
申请日：2002-08-27
申请人： Gurtej S. Sandhu , Ravi Iyer
发明人： Gurtej S. Sandhu , Ravi Iyer
IPC分类号： H01L2348
CPC分类号： H01L21/76843 , H01L21/32051 , H01L21/76846 , H01L21/7685
摘要： The invention includes integrated circuitry having an electrically insulative layer over a substrate and an opening within the electrically insulative layer. The opening has a periphery defined at least in part by a bottom surface and a sidewall surface. A first titanium layer is disposed within the opening in contact with the bottom surface and is thicker along the bottom surface than along the sidewall. A layer of TiN is provided over the first titanium layer along the bottom surface and along the sidewall surface of the opening, and a second layer of titanium is disposed over the electrically insulative layer but substantially not within the opening. The second titanium layer has a thickness of less then 50 Å along the sidewall surface and over the bottom surface. An aluminum-comprising layer is within the opening and over the second layer.
摘要翻译：本发明包括在基板上具有电绝缘层的集成电路和电绝缘层内的开口。开口具有至少部分地由底表面和侧壁表面限定的外围。第一钛层设置在与底表面接触的开口内，并且沿着底表面比沿侧壁更厚。沿着底表面并沿着开口的侧壁表面在第一钛层上提供TiN层，并且第二层钛层设置在电绝缘层上，但基本上不在开口内。第二钛层的侧壁表面和底面的厚度小于50埃。包含铝的层在开口内和第二层之上。

10. 发明授权

US5985770A Method of depositing silicon oxides 失效
公开(公告)号：US5985770A
公开(公告)日：1999-11-16
申请号：US915987
申请日：1997-08-21
申请人： Gurtej S. Sandhu , Ravi Iyer
发明人： Gurtej S. Sandhu , Ravi Iyer
IPC分类号： C23C16/30 , H01L21/316 , H01L21/368
CPC分类号： H01L21/02271 , C23C16/30 , H01L21/02126 , H01L21/02129 , H01L21/02131 , H01L21/0214 , H01L21/31612
摘要： The invention comprises methods of depositing silicon oxide material onto a substrate. In but one aspect of the invention, a method of depositing a silicon oxide containing layer on a substrate includes initially forming a layer comprising liquid silicon oxide precursor onto a substrate. After forming the layer, the layer is doped and transformed into a solid doped silicon oxide containing layer on the substrate. In a preferred implementation, the doping is by gas phase doping and the liquid precursor comprises Si(OH).sub.4. In the preferred implementation, the transformation occurs by raising the temperature of the deposited liquid precursor to a first elevated temperature and polymerizing the deposited liquid precursor on the substrate. The temperature is continued to be raised to a second elevated temperature higher than the first elevated temperature and a solid doped silicon oxide containing layer is formed on the substrate.

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